ATE516389T1 - Kristallisierungsverfahren - Google Patents

Kristallisierungsverfahren

Info

Publication number
ATE516389T1
ATE516389T1 AT08354088T AT08354088T ATE516389T1 AT E516389 T1 ATE516389 T1 AT E516389T1 AT 08354088 T AT08354088 T AT 08354088T AT 08354088 T AT08354088 T AT 08354088T AT E516389 T1 ATE516389 T1 AT E516389T1
Authority
AT
Austria
Prior art keywords
substrate
amorphous
thin layer
thin
depositing
Prior art date
Application number
AT08354088T
Other languages
English (en)
Inventor
Philippe Bouchut
Original Assignee
Commissariat Energie Atomique
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat Energie Atomique filed Critical Commissariat Energie Atomique
Application granted granted Critical
Publication of ATE516389T1 publication Critical patent/ATE516389T1/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B1/00—Single-crystal growth directly from the solid state
    • C30B1/02—Single-crystal growth directly from the solid state by thermal treatment, e.g. strain annealing
    • C30B1/023—Single-crystal growth directly from the solid state by thermal treatment, e.g. strain annealing from solids with amorphous structure
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/08—Germanium
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0221—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies
    • H10D86/0223—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies comprising crystallisation of amorphous, microcrystalline or polycrystalline semiconductor materials
    • H10D86/0225—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies comprising crystallisation of amorphous, microcrystalline or polycrystalline semiconductor materials using crystallisation-promoting species, e.g. using a Ni catalyst
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/38—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done after the formation of the materials
    • H10P14/3802—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H10P14/3808—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Thermal Sciences (AREA)
  • Recrystallisation Techniques (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
AT08354088T 2007-11-28 2008-11-28 Kristallisierungsverfahren ATE516389T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/FR2007/001965 WO2009068756A1 (fr) 2007-11-28 2007-11-28 Procede de cristallisation

Publications (1)

Publication Number Publication Date
ATE516389T1 true ATE516389T1 (de) 2011-07-15

Family

ID=39855108

Family Applications (1)

Application Number Title Priority Date Filing Date
AT08354088T ATE516389T1 (de) 2007-11-28 2008-11-28 Kristallisierungsverfahren

Country Status (6)

Country Link
US (1) US7923317B2 (de)
EP (1) EP2071058B1 (de)
JP (1) JP2009135501A (de)
AT (1) ATE516389T1 (de)
ES (1) ES2368774T3 (de)
WO (1) WO2009068756A1 (de)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2477212A1 (de) * 2008-06-09 2012-07-18 Dritte Patentportfolio Beteiligungsgesellschaft mbH & Co. KG Polykristalline Silizium-Dünnschichten hergestellt durch Titan-unterstützten Metall-induzierten Schichtaustausch
JP2010098003A (ja) * 2008-10-14 2010-04-30 Osaka Univ レーザー結晶化法
JP5610393B2 (ja) 2009-12-29 2014-10-22 国立大学法人 東京大学 自己組織化されたナノ構造薄膜の製造方法、ナノ構造薄膜
FR2989389B1 (fr) * 2012-04-11 2015-07-17 Commissariat Energie Atomique Procede de preparation d'une couche de silicium cristallise a gros grains.
US20140065838A1 (en) * 2012-08-31 2014-03-06 Carolyn R. Ellinger Thin film dielectric layer formation
FR3008994A1 (fr) * 2013-07-25 2015-01-30 Commissariat Energie Atomique Procede de cristallisation en phase solide
GB2566477A (en) * 2017-09-14 2019-03-20 Nat Univ Ireland Galway Method of processing a target material
CN108091708B (zh) * 2017-12-08 2020-08-14 北京通美晶体技术有限公司 锗单晶片、其制法、晶棒的制法及单晶片的用途
CN114807893B (zh) * 2021-01-19 2024-12-06 圆益Ips股份有限公司 薄膜形成方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6168385A (ja) 1984-09-10 1986-04-08 Hitachi Ltd 単結晶薄膜形成方法
JPH0869967A (ja) * 1994-08-26 1996-03-12 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法
US5994164A (en) * 1997-03-18 1999-11-30 The Penn State Research Foundation Nanostructure tailoring of material properties using controlled crystallization
US6278130B1 (en) * 1998-05-08 2001-08-21 Seung-Ki Joo Liquid crystal display and fabricating method thereof
JP2000208771A (ja) * 1999-01-11 2000-07-28 Hitachi Ltd 半導体装置、液晶表示装置およびこれらの製造方法
US6812491B2 (en) * 2002-03-22 2004-11-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory cell and semiconductor memory device
KR100492152B1 (ko) * 2002-12-31 2005-06-01 엘지.필립스 엘시디 주식회사 실리콘 결정화방법
KR100577795B1 (ko) 2003-12-30 2006-05-11 비오이 하이디스 테크놀로지 주식회사 다결정 실리콘막 형성방법
US7192818B1 (en) * 2005-09-22 2007-03-20 National Taiwan University Polysilicon thin film fabrication method

Also Published As

Publication number Publication date
WO2009068756A1 (fr) 2009-06-04
EP2071058B1 (de) 2011-07-13
US7923317B2 (en) 2011-04-12
EP2071058A1 (de) 2009-06-17
US20100075487A1 (en) 2010-03-25
JP2009135501A (ja) 2009-06-18
ES2368774T3 (es) 2011-11-22

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