ATE517441T1 - Phasenwechselspeicherelemente mit selbstausgerichteten phasenspeichermaterialschichten - Google Patents

Phasenwechselspeicherelemente mit selbstausgerichteten phasenspeichermaterialschichten

Info

Publication number
ATE517441T1
ATE517441T1 AT07753788T AT07753788T ATE517441T1 AT E517441 T1 ATE517441 T1 AT E517441T1 AT 07753788 T AT07753788 T AT 07753788T AT 07753788 T AT07753788 T AT 07753788T AT E517441 T1 ATE517441 T1 AT E517441T1
Authority
AT
Austria
Prior art keywords
phase change
phase
self
material layers
electrode
Prior art date
Application number
AT07753788T
Other languages
English (en)
Inventor
Jun Liu
Original Assignee
Micron Technology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Micron Technology Inc filed Critical Micron Technology Inc
Application granted granted Critical
Publication of ATE517441T1 publication Critical patent/ATE517441T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/80—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/061—Shaping switching materials
    • H10N70/068—Shaping switching materials by processes specially adapted for achieving sub-lithographic dimensions, e.g. using spacers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
    • H10N70/8265—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices on sidewalls of dielectric structures, e.g. mesa-shaped or cup-shaped devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • H10N70/8825—Selenides, e.g. GeSe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • H10N70/8828—Tellurides, e.g. GeSbTe

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
AT07753788T 2006-04-04 2007-03-23 Phasenwechselspeicherelemente mit selbstausgerichteten phasenspeichermaterialschichten ATE517441T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/396,616 US7812334B2 (en) 2006-04-04 2006-04-04 Phase change memory elements using self-aligned phase change material layers and methods of making and using same
PCT/US2007/007188 WO2007126690A2 (en) 2006-04-04 2007-03-23 Phase change memory elements using self- aligned phase change material layers and methods of making and using same

Publications (1)

Publication Number Publication Date
ATE517441T1 true ATE517441T1 (de) 2011-08-15

Family

ID=38565769

Family Applications (1)

Application Number Title Priority Date Filing Date
AT07753788T ATE517441T1 (de) 2006-04-04 2007-03-23 Phasenwechselspeicherelemente mit selbstausgerichteten phasenspeichermaterialschichten

Country Status (7)

Country Link
US (4) US7812334B2 (de)
EP (2) EP2325911B1 (de)
JP (1) JP5360496B2 (de)
KR (1) KR101067969B1 (de)
CN (1) CN101416326B (de)
AT (1) ATE517441T1 (de)
WO (1) WO2007126690A2 (de)

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US20080164453A1 (en) 2007-01-07 2008-07-10 Breitwisch Matthew J Uniform critical dimension size pore for pcram application
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US20080270811A1 (en) * 2007-04-26 2008-10-30 Super Talent Electronics Inc. Fast Suspend-Resume of Computer Motherboard Using Phase-Change Memory
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KR20100076274A (ko) * 2008-12-26 2010-07-06 주식회사 하이닉스반도체 상변화 메모리 소자 및 그 제조방법
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WO2011119175A1 (en) 2010-03-26 2011-09-29 Advanced Technology Materials, Inc. Germanium antimony telluride materials and devices incorporating same
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US8097537B2 (en) * 2010-05-25 2012-01-17 Micron Technology, Inc. Phase change memory cell structures and methods
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KR102117124B1 (ko) 2012-04-30 2020-05-29 엔테그리스, 아이엔씨. 유전체 물질로 중심-충전된 상 변화 합금을 포함하는 상 변화 메모리 구조체
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US11196401B2 (en) 2018-08-14 2021-12-07 Newport Fab, Llc Radio frequency (RF) module using a tunable RF filter with non-volatile RF switches
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US10916540B2 (en) 2018-08-14 2021-02-09 Newport Fab, Llc Device including PCM RF switch integrated with group III-V semiconductors
US11050022B2 (en) * 2018-08-14 2021-06-29 Newport Fab, Llc Radio frequency (RF) switches having phase-change material (PCM) and heat management for increased manufacturability and performance
US10937960B2 (en) 2018-08-14 2021-03-02 Newport Fab, Llc Concurrent fabrication of and structure for capacitive terminals and ohmic terminals in a phase-change material (PCM) radio frequency (RF) switch
US11031555B2 (en) 2018-08-14 2021-06-08 Newport Fab, Llc Power handling improvements for phase-change material (PCM) radio frequency (RF) switch circuits
US10615338B2 (en) 2018-08-14 2020-04-07 Newport Fab, Llc Phase-change material (PCM) contacts with slot lower portions and contact dielectric for reducing parasitic capacitance and improving manufacturability in PCM RF switches
US10944052B2 (en) 2018-08-14 2021-03-09 Newport Fab, Llc Phase-change material (PCM) radio frequency (RF) switch using a chemically protective and thermally conductive layer
US11031689B2 (en) 2018-08-14 2021-06-08 Newport Fab, Llc Method for rapid testing of functionality of phase-change material (PCM) radio frequency (RF) switches
US10862477B2 (en) 2018-08-14 2020-12-08 Newport Fab, Llc Read out integrated circuit (ROIC) for rapid testing of functionality of phase-change material (PCM) radio frequency (RF) switches
US10978639B2 (en) 2018-08-14 2021-04-13 Newport Fab, Llc Circuits for reducing RF signal interference and for reducing DC power loss in phase-change material (PCM) RF switches
US10862032B2 (en) 2018-08-14 2020-12-08 Newport Fab, Llc Phase-change material (PCM) radio frequency (RF) switch
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Also Published As

Publication number Publication date
CN101416326B (zh) 2011-08-17
US20110227029A1 (en) 2011-09-22
WO2007126690A2 (en) 2007-11-08
EP2325911A3 (de) 2011-07-06
US8674334B2 (en) 2014-03-18
EP2325911A2 (de) 2011-05-25
JP2009532898A (ja) 2009-09-10
JP5360496B2 (ja) 2013-12-04
KR20090005131A (ko) 2009-01-12
US20130248810A1 (en) 2013-09-26
EP2005495B1 (de) 2011-07-20
CN101416326A (zh) 2009-04-22
EP2325911B1 (de) 2015-08-19
US20090166605A1 (en) 2009-07-02
WO2007126690A3 (en) 2007-12-21
US7812334B2 (en) 2010-10-12
EP2005495A2 (de) 2008-12-24
US20070246766A1 (en) 2007-10-25
KR101067969B1 (ko) 2011-09-26
US7968862B2 (en) 2011-06-28

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