ATE519220T1 - System und verfahren zum elektronenstrahlschreiben - Google Patents

System und verfahren zum elektronenstrahlschreiben

Info

Publication number
ATE519220T1
ATE519220T1 AT06838855T AT06838855T ATE519220T1 AT E519220 T1 ATE519220 T1 AT E519220T1 AT 06838855 T AT06838855 T AT 06838855T AT 06838855 T AT06838855 T AT 06838855T AT E519220 T1 ATE519220 T1 AT E519220T1
Authority
AT
Austria
Prior art keywords
electron beam
beam writing
writing
consideration
received information
Prior art date
Application number
AT06838855T
Other languages
English (en)
Inventor
Dmitri Lapanik
Shohei Matsushita
Takashi Mitsuhashi
Zhigang Wu
Original Assignee
Cadence Design Systems Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cadence Design Systems Inc filed Critical Cadence Design Systems Inc
Application granted granted Critical
Publication of ATE519220T1 publication Critical patent/ATE519220T1/de

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/82—Auxiliary processes, e.g. cleaning or inspecting
    • G03F1/84—Inspecting
    • G03F1/86—Inspecting by charged particle beam [CPB]
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/76—Patterning of masks by imaging
    • G03F1/78—Patterning of masks by imaging by charged particle beam [CPB], e.g. electron beam patterning of masks
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F30/00—Computer-aided design [CAD]
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F30/00—Computer-aided design [CAD]
    • G06F30/10—Geometric CAD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/302—Controlling tubes by external information, e.g. program control
    • H01J37/3023—Program control
    • H01J37/3026—Patterning strategy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3175—Lithography
    • H01J2237/31761—Patterning strategy
    • H01J2237/31762—Computer and memory organisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3175—Lithography
    • H01J2237/31777—Lithography by projection
    • H01J2237/31788—Lithography by projection through mask

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Nanotechnology (AREA)
  • Theoretical Computer Science (AREA)
  • Analytical Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Geometry (AREA)
  • Computer Hardware Design (AREA)
  • Mathematical Physics (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Evolutionary Computation (AREA)
  • Plasma & Fusion (AREA)
  • General Engineering & Computer Science (AREA)
  • Computational Mathematics (AREA)
  • Mathematical Analysis (AREA)
  • Mathematical Optimization (AREA)
  • Pure & Applied Mathematics (AREA)
  • Electron Beam Exposure (AREA)
  • Architecture (AREA)
  • Software Systems (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
AT06838855T 2005-12-01 2006-11-30 System und verfahren zum elektronenstrahlschreiben ATE519220T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US74169605P 2005-12-01 2005-12-01
PCT/US2006/046125 WO2007064956A1 (en) 2005-12-01 2006-11-30 System and method of electron beam writing

Publications (1)

Publication Number Publication Date
ATE519220T1 true ATE519220T1 (de) 2011-08-15

Family

ID=37812228

Family Applications (1)

Application Number Title Priority Date Filing Date
AT06838855T ATE519220T1 (de) 2005-12-01 2006-11-30 System und verfahren zum elektronenstrahlschreiben

Country Status (5)

Country Link
US (2) US7777204B2 (de)
EP (1) EP1961031B1 (de)
JP (1) JP5147711B2 (de)
AT (1) ATE519220T1 (de)
WO (1) WO2007064956A1 (de)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7747977B1 (en) * 2005-09-15 2010-06-29 D2S, Inc. Method and system for stencil design for particle beam writing
JP5147711B2 (ja) * 2005-12-01 2013-02-20 ケイデンス デザイン システムズ インコーポレイテッド 電子線描画のシステム及び方法
US8426832B2 (en) * 2006-11-21 2013-04-23 D2S, Inc. Cell projection charged particle beam lithography
US7897522B2 (en) * 2006-11-21 2011-03-01 Cadence Design Systems, Inc. Method and system for improving particle beam lithography
US7772575B2 (en) * 2006-11-21 2010-08-10 D2S, Inc. Stencil design and method for cell projection particle beam lithography
US9243920B2 (en) 2007-04-17 2016-01-26 Esther Abramovich Ettinger System and method for adapting the routing information provided by a mapping or routing device
US7914954B2 (en) * 2008-09-09 2011-03-29 D2S, Inc. Stencil, stencil design system and method for cell projection particle beam lithography
JP5498106B2 (ja) * 2009-09-15 2014-05-21 株式会社ニューフレアテクノロジー 荷電粒子ビーム描画方法及び荷電粒子ビーム描画装置
JP5708330B2 (ja) * 2011-07-15 2015-04-30 富士通セミコンダクター株式会社 配線パターンデータの生成方法
US8468473B1 (en) 2012-06-08 2013-06-18 Taiwan Semiconductor Manufacturing Company, Ltd. Method for high volume e-beam lithography
US9053286B1 (en) * 2013-03-25 2015-06-09 Synopsys, Inc. Verification of fractured mask data
US9679742B2 (en) * 2015-10-30 2017-06-13 Fei Company Method for optimizing charged particle beams formed by shaped apertures
US9697310B2 (en) * 2015-11-02 2017-07-04 Winbond Electronics Corporation Level faults interception in integrated circuits

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03174716A (ja) 1989-08-07 1991-07-29 Hitachi Ltd 電子ビーム描画装置および描画方式
US5217916A (en) 1989-10-03 1993-06-08 Trw Inc. Method of making an adaptive configurable gate array
US5283440A (en) * 1990-10-05 1994-02-01 Hitachi, Ltd. Electron beam writing system used in a cell projection method
US6782524B2 (en) 1999-09-22 2004-08-24 Dupont Photomasks, Inc. Photomask and integrated circuit manufactured by automatically correcting design rule violations in a mask layout file
JP2001133962A (ja) 1999-11-02 2001-05-18 Advantest Corp 部分一括転写露光用マスクデータの作成方法及びそれによる露光方法
JP3886695B2 (ja) 2000-03-28 2007-02-28 株式会社東芝 露光パターンデータ生成方法、露光パターンデータ生成装置、半導体装置の製造方法、及びフォトマスクの製造方法
US6393640B1 (en) 2000-04-20 2002-05-28 Nina B. Dalis Mattress pad and pocket combination
JP3983990B2 (ja) 2000-06-13 2007-09-26 株式会社東芝 回路パターンの設計方法と荷電粒子ビーム露光方法及び記録媒体
JP3785023B2 (ja) 2000-06-13 2006-06-14 株式会社東芝 回路パターンの設計方法、露光方法及び荷電粒子ビーム露光システム
US6718532B2 (en) 2001-02-23 2004-04-06 Kabushiki Kaisha Toshiba Charged particle beam exposure system using aperture mask in semiconductor manufacture
JP2003017388A (ja) 2001-06-29 2003-01-17 Fujitsu Ltd ブロックマスク製造方法、ブロックマスク、および、露光装置
WO2004008246A2 (en) 2002-07-12 2004-01-22 Cadence Design Systems, Inc. Method and system for context-specific mask writing
US7747977B1 (en) 2005-09-15 2010-06-29 D2S, Inc. Method and system for stencil design for particle beam writing
JP5147711B2 (ja) * 2005-12-01 2013-02-20 ケイデンス デザイン システムズ インコーポレイテッド 電子線描画のシステム及び方法
US7953582B2 (en) 2006-11-21 2011-05-31 Cadence Design Systems, Inc. Method and system for lithography simulation and measurement of critical dimensions
US7902528B2 (en) 2006-11-21 2011-03-08 Cadence Design Systems, Inc. Method and system for proximity effect and dose correction for a particle beam writing device
US7772575B2 (en) 2006-11-21 2010-08-10 D2S, Inc. Stencil design and method for cell projection particle beam lithography
US7897522B2 (en) 2006-11-21 2011-03-01 Cadence Design Systems, Inc. Method and system for improving particle beam lithography
US7579606B2 (en) 2006-12-01 2009-08-25 D2S, Inc. Method and system for logic design for cell projection particle beam lithography
US7824828B2 (en) 2007-02-22 2010-11-02 Cadence Design Systems, Inc. Method and system for improvement of dose correction for particle beam writers

Also Published As

Publication number Publication date
JP5147711B2 (ja) 2013-02-20
EP1961031B1 (de) 2011-08-03
US20070125967A1 (en) 2007-06-07
EP1961031A1 (de) 2008-08-27
US20110192994A1 (en) 2011-08-11
WO2007064956A1 (en) 2007-06-07
JP2009518827A (ja) 2009-05-07
US8525135B2 (en) 2013-09-03
US7777204B2 (en) 2010-08-17

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