ATE519226T1 - Auf nanoröhren basierender schaltunsgverbindungsansatz - Google Patents

Auf nanoröhren basierender schaltunsgverbindungsansatz

Info

Publication number
ATE519226T1
ATE519226T1 AT05800438T AT05800438T ATE519226T1 AT E519226 T1 ATE519226 T1 AT E519226T1 AT 05800438 T AT05800438 T AT 05800438T AT 05800438 T AT05800438 T AT 05800438T AT E519226 T1 ATE519226 T1 AT E519226T1
Authority
AT
Austria
Prior art keywords
circuit connection
based circuit
nanotube based
connection approach
electrical connection
Prior art date
Application number
AT05800438T
Other languages
English (en)
Inventor
Chris Wyland
Original Assignee
Nxp Bv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nxp Bv filed Critical Nxp Bv
Application granted granted Critical
Publication of ATE519226T1 publication Critical patent/ATE519226T1/de

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/40—Leadframes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/40—Leadframes
    • H10W70/456—Materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/62—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their interconnections
    • H10W70/66—Conductive materials thereof
    • H10W70/664—Carbon-based materials, e.g. fullerenes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/072—Connecting or disconnecting of bump connectors
    • H10W72/07231—Techniques
    • H10W72/07236—Soldering or alloying
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/553—Materials of bond wires not comprising solid metals or solid metalloids, e.g. polymers, ceramics or liquids
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/756—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked lead frame, conducting package substrate or heat sink
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49117—Conductor or circuit manufacturing
    • Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
    • Y10T29/49155—Manufacturing circuit on or in base
    • Y10T29/49162—Manufacturing circuit on or in base by using wire as conductive path

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Materials Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Composite Materials (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Adhesives Or Adhesive Processes (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Wire Bonding (AREA)
  • Lead Frames For Integrated Circuits (AREA)
AT05800438T 2004-11-04 2005-11-04 Auf nanoröhren basierender schaltunsgverbindungsansatz ATE519226T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US62545004P 2004-11-04 2004-11-04
PCT/IB2005/053624 WO2006048845A2 (en) 2004-11-04 2005-11-04 Carbon nanotube-based conductive connections for integrated circuit devices

Publications (1)

Publication Number Publication Date
ATE519226T1 true ATE519226T1 (de) 2011-08-15

Family

ID=35761350

Family Applications (1)

Application Number Title Priority Date Filing Date
AT05800438T ATE519226T1 (de) 2004-11-04 2005-11-04 Auf nanoröhren basierender schaltunsgverbindungsansatz

Country Status (8)

Country Link
US (1) US8680677B2 (de)
EP (1) EP1810332B1 (de)
JP (1) JP2008519454A (de)
KR (1) KR20070084426A (de)
CN (1) CN101095230B (de)
AT (1) ATE519226T1 (de)
TW (1) TW200631111A (de)
WO (1) WO2006048845A2 (de)

Families Citing this family (62)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102006054948B4 (de) * 2006-11-22 2017-03-09 Drägerwerk AG & Co. KGaA Elektrochemischer Gassensor enthaltend elektrische Verbindungsleitungen oder Gehäuse-Kontaktbrücken aus Kohlenstoffnanoröhren
KR101221807B1 (ko) * 2006-12-29 2013-01-14 페어차일드코리아반도체 주식회사 전력 소자 패키지
US9005755B2 (en) 2007-01-03 2015-04-14 Applied Nanostructured Solutions, Llc CNS-infused carbon nanomaterials and process therefor
US8951632B2 (en) 2007-01-03 2015-02-10 Applied Nanostructured Solutions, Llc CNT-infused carbon fiber materials and process therefor
US8951631B2 (en) * 2007-01-03 2015-02-10 Applied Nanostructured Solutions, Llc CNT-infused metal fiber materials and process therefor
US8158217B2 (en) 2007-01-03 2012-04-17 Applied Nanostructured Solutions, Llc CNT-infused fiber and method therefor
JP5194513B2 (ja) 2007-03-29 2013-05-08 富士通セミコンダクター株式会社 配線構造及びその形成方法
WO2009021069A1 (en) 2007-08-07 2009-02-12 Nanocomp Technologies, Inc. Electrically and thermally non-metallic conductive nanostructure-based adapters
CN101556839B (zh) 2008-04-09 2011-08-24 清华大学 线缆
CN101497437B (zh) * 2008-02-01 2012-11-21 清华大学 碳纳米管复合膜的制备方法
CN101499328B (zh) * 2008-02-01 2013-06-05 清华大学 绞线
JP2010056482A (ja) * 2008-08-29 2010-03-11 Fujitsu Ltd プリント配線板および導電材料
JP5577356B2 (ja) 2009-02-17 2014-08-20 アプライド ナノストラクチャード ソリューションズ リミテッド ライアビリティー カンパニー カーボン・ナノチューブを繊維上に含んで構成された複合材料
CN102333906B (zh) 2009-02-27 2015-03-11 应用纳米结构方案公司 使用气体预热法的低温cnt生长
US20100227134A1 (en) 2009-03-03 2010-09-09 Lockheed Martin Corporation Method for the prevention of nanoparticle agglomeration at high temperatures
US9111658B2 (en) 2009-04-24 2015-08-18 Applied Nanostructured Solutions, Llc CNS-shielded wires
AU2010259173B2 (en) 2009-04-24 2015-03-19 Applied Nanostructured Solutions Llc CNT-based signature control material
BRPI1014711A2 (pt) 2009-04-27 2016-04-12 Applied Nanostrctured Solutions Llc aquecimento de resistência com base em cnt para descongelar estruturas de compósito
US8354593B2 (en) * 2009-07-10 2013-01-15 Nanocomp Technologies, Inc. Hybrid conductors and method of making same
WO2011017200A1 (en) 2009-08-03 2011-02-10 Lockheed Martin Corporation Incorporation of nanoparticles in composite fibers
US20110171469A1 (en) * 2009-11-02 2011-07-14 Applied Nanostructured Solutions, Llc Cnt-infused aramid fiber materials and process therefor
CN102596715A (zh) 2009-11-23 2012-07-18 应用纳米结构方案公司 Cnt特制复合材料地面基结构
EP2504164A4 (de) 2009-11-23 2013-07-17 Applied Nanostructured Sols Keramikverbundmaterialien mit kohlenstoffnanoröhreninfundierten fasermaterialien sowie herstellungsverfahren dafür
KR20120104600A (ko) 2009-12-14 2012-09-21 어플라이드 나노스트럭처드 솔루션스, 엘엘씨. 탄소 나노튜브 주입된 섬유 물질을 포함하는 방염 복합재 물질 및 물품
US9167736B2 (en) 2010-01-15 2015-10-20 Applied Nanostructured Solutions, Llc CNT-infused fiber as a self shielding wire for enhanced power transmission line
AU2011256789A1 (en) 2010-02-02 2012-07-12 Applied Nanostructured Solutions, Llc Fiber containing parallel-aligned carbon nanotubes
KR101818640B1 (ko) 2010-03-02 2018-01-15 어플라이드 나노스트럭처드 솔루션스, 엘엘씨. 카본 나노튜브 주입된 섬유를 포함하는 전기 장치 및 그의 제조 방법
CA2790205A1 (en) 2010-03-02 2011-09-09 Applied Nanostructured Solutions, Llc Spiral wound electrical devices containing carbon nanotube-infused electrode materials and methods and apparatuses for production thereof
US8780526B2 (en) 2010-06-15 2014-07-15 Applied Nanostructured Solutions, Llc Electrical devices containing carbon nanotube-infused fibers and methods for production thereof
US8482111B2 (en) 2010-07-19 2013-07-09 Tessera, Inc. Stackable molded microelectronic packages
US9017854B2 (en) 2010-08-30 2015-04-28 Applied Nanostructured Solutions, Llc Structural energy storage assemblies and methods for production thereof
BR112013005802A2 (pt) 2010-09-14 2016-05-10 Applied Nanostructured Sols substratos de vidro com nanotubos de carbono crescidos sobre os mesmos e métodos para sua produção
AU2011305809A1 (en) 2010-09-22 2013-02-28 Applied Nanostructured Solutions, Llc Carbon fiber substrates having carbon nanotubes grown thereon and processes for production thereof
EP2629595A2 (de) 2010-09-23 2013-08-21 Applied NanoStructured Solutions, LLC CNT-infundierte Faser als selbstabschirmendes Kabel für eine Übertragungsleitung mit erhöhter Leistung
KR101128063B1 (ko) 2011-05-03 2012-04-23 테세라, 인코포레이티드 캡슐화 층의 표면에 와이어 본드를 구비하는 패키지 적층형 어셈블리
KR101829907B1 (ko) * 2011-09-02 2018-02-19 엘에스전선 주식회사 탄소 동소체로 코팅된 선재를 포함하는 본딩 와이어
US8404520B1 (en) 2011-10-17 2013-03-26 Invensas Corporation Package-on-package assembly with wire bond vias
CN103178027B (zh) * 2011-12-21 2016-03-09 清华大学 散热结构及应用该散热结构的电子设备
US8946757B2 (en) 2012-02-17 2015-02-03 Invensas Corporation Heat spreading substrate with embedded interconnects
US9085464B2 (en) 2012-03-07 2015-07-21 Applied Nanostructured Solutions, Llc Resistance measurement system and method of using the same
US8835228B2 (en) 2012-05-22 2014-09-16 Invensas Corporation Substrate-less stackable package with wire-bond interconnect
US9502390B2 (en) 2012-08-03 2016-11-22 Invensas Corporation BVA interposer
CN103050798B (zh) * 2012-12-13 2015-02-04 中国电力科学研究院 一种石墨烯纳米材料导线接续金具及接续方法
US9167710B2 (en) 2013-08-07 2015-10-20 Invensas Corporation Embedded packaging with preformed vias
US20150076714A1 (en) 2013-09-16 2015-03-19 Invensas Corporation Microelectronic element with bond elements to encapsulation surface
US9583456B2 (en) 2013-11-22 2017-02-28 Invensas Corporation Multiple bond via arrays of different wire heights on a same substrate
US9379074B2 (en) 2013-11-22 2016-06-28 Invensas Corporation Die stacks with one or more bond via arrays of wire bond wires and with one or more arrays of bump interconnects
US9583411B2 (en) 2014-01-17 2017-02-28 Invensas Corporation Fine pitch BVA using reconstituted wafer with area array accessible for testing
CN105097748B (zh) * 2014-04-23 2018-07-13 北京富纳特创新科技有限公司 键合线以及半导体封装件
US10381326B2 (en) * 2014-05-28 2019-08-13 Invensas Corporation Structure and method for integrated circuits packaging with increased density
US9888579B2 (en) 2015-03-05 2018-02-06 Invensas Corporation Pressing of wire bond wire tips to provide bent-over tips
US9502372B1 (en) 2015-04-30 2016-11-22 Invensas Corporation Wafer-level packaging using wire bond wires in place of a redistribution layer
US9761554B2 (en) 2015-05-07 2017-09-12 Invensas Corporation Ball bonding metal wire bond wires to metal pads
US10490528B2 (en) 2015-10-12 2019-11-26 Invensas Corporation Embedded wire bond wires
US9490222B1 (en) 2015-10-12 2016-11-08 Invensas Corporation Wire bond wires for interference shielding
US10332854B2 (en) 2015-10-23 2019-06-25 Invensas Corporation Anchoring structure of fine pitch bva
US10181457B2 (en) 2015-10-26 2019-01-15 Invensas Corporation Microelectronic package for wafer-level chip scale packaging with fan-out
US10043779B2 (en) 2015-11-17 2018-08-07 Invensas Corporation Packaged microelectronic device for a package-on-package device
US9984992B2 (en) 2015-12-30 2018-05-29 Invensas Corporation Embedded wire bond wires for vertical integration with separate surface mount and wire bond mounting surfaces
US9935075B2 (en) 2016-07-29 2018-04-03 Invensas Corporation Wire bonding method and apparatus for electromagnetic interference shielding
US10299368B2 (en) 2016-12-21 2019-05-21 Invensas Corporation Surface integrated waveguides and circuit structures therefor
TW202509950A (zh) * 2023-04-28 2025-03-01 美商伍茨公司 碳奈米管至金屬組件

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR970011623B1 (en) * 1994-01-13 1997-07-12 Samsung Electronics Co Ltd Lead frame of semiconductor package
US6231744B1 (en) * 1997-04-24 2001-05-15 Massachusetts Institute Of Technology Process for fabricating an array of nanowires
US6299812B1 (en) * 1999-08-16 2001-10-09 The Board Of Regents Of The University Of Oklahoma Method for forming a fibers/composite material having an anisotropic structure
US6340822B1 (en) * 1999-10-05 2002-01-22 Agere Systems Guardian Corp. Article comprising vertically nano-interconnected circuit devices and method for making the same
US7335603B2 (en) * 2000-02-07 2008-02-26 Vladimir Mancevski System and method for fabricating logic devices comprising carbon nanotube transistors
WO2002017397A1 (de) * 2000-08-24 2002-02-28 Infineon Technologies Ag Elektronisches element, verfahren zum herstellen eines solchen und halbleiterelement
US7084507B2 (en) * 2001-05-02 2006-08-01 Fujitsu Limited Integrated circuit device and method of producing the same
DE10134073C1 (de) 2001-07-13 2003-02-06 Zimmer Ag Verfahren zum Aufspulen von Filamenten
CN1261959C (zh) * 2001-08-28 2006-06-28 翰立光电股份有限公司 场发射显示器中发射极的制造方法
CN1414590A (zh) * 2001-10-26 2003-04-30 东元资讯股份有限公司 阴极射线管使用的阴极及其产生电子的方法
JP2003142755A (ja) * 2001-11-05 2003-05-16 Fujitsu Ltd 磁気抵抗センサ及びその製造方法
EP1483201A2 (de) 2002-03-20 2004-12-08 Facultés Universitaires Notre-Dame de la Paix Nanoverbundwerkstoffe: produkte, verfahren zu ihrer herstellung und ihrer verwendung
JP4974263B2 (ja) * 2002-05-20 2012-07-11 富士通株式会社 半導体装置の製造方法
US7518247B2 (en) * 2002-11-29 2009-04-14 Nec Corporation Semiconductor device and its manufacturing method
US6875374B1 (en) * 2003-02-26 2005-04-05 The Regents Of The University Of California Ceramic materials reinforced with single-wall carbon nanotubes as electrical conductors
JP2005120427A (ja) 2003-10-16 2005-05-12 Matsushita Electric Works Ltd 電気接点用材料及び電気接点

Also Published As

Publication number Publication date
US20090212430A1 (en) 2009-08-27
CN101095230B (zh) 2010-09-01
WO2006048845A3 (en) 2006-08-03
JP2008519454A (ja) 2008-06-05
TW200631111A (en) 2006-09-01
EP1810332A2 (de) 2007-07-25
KR20070084426A (ko) 2007-08-24
EP1810332B1 (de) 2011-08-03
CN101095230A (zh) 2007-12-26
US8680677B2 (en) 2014-03-25
WO2006048845A2 (en) 2006-05-11

Similar Documents

Publication Publication Date Title
ATE519226T1 (de) Auf nanoröhren basierender schaltunsgverbindungsansatz
TW200737466A (en) Carbon nanotubes solder composite for high performance interconnect
TW200619282A (en) Coatable conductive polyethylenedioxythiophene with carbon nanotubes
MY143895A (en) Fuel gauge for fuel cartridges
BRPI0716649A2 (pt) poliuretanos antiestÁticos e eletricamente condutores
AU301246S (en) Fuel cell supply
TW200633175A (en) Integrated circuit nanotube-based substrate
ATE557576T1 (de) Leiterplatine mit elektronischem bauelement
EP1696546A3 (de) Wechselrichtervorrichtung für Batteriefahrzeug
ATE480130T1 (de) Elektronikmodul und verfahren zur herstellung eines elektronikmoduls
TW200638316A (en) Display units
TW200617995A (en) Anisotropic conductive material
ATE551713T1 (de) Kathodenstruktur mit nanoröhren für bildschirm
FR2849437B1 (fr) Nanotubes de carbone
DE502006005153D1 (de) Halterung für einen Blitzableiter
TW200743194A (en) Package structure
WO2007064540A3 (en) Molecular quantum memory
WO2008039624A3 (en) Sense amplifier circuit for low voltage applications
TW200735736A (en) Assembly with at leat two component in electrical leading effect connection and procedure for manufacturing the assembly
ATE450920T1 (de) Klemmenkasten für einen elektromotor
DE602006006038D1 (de) Filteranordnung
WO2004095533A3 (en) Reducing leakage current in carbon nanotube devices
ATE410743T1 (de) Einbruchhemmende vorrichtung
ATE488020T1 (de) Schalter mit komplementärer diodeneinheit
TW200708332A (en) A microscale air cleaning device

Legal Events

Date Code Title Description
RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties