ATE521030T1 - Datenspeicheranordnung und datenspeicherverfahren - Google Patents

Datenspeicheranordnung und datenspeicherverfahren

Info

Publication number
ATE521030T1
ATE521030T1 AT07743724T AT07743724T ATE521030T1 AT E521030 T1 ATE521030 T1 AT E521030T1 AT 07743724 T AT07743724 T AT 07743724T AT 07743724 T AT07743724 T AT 07743724T AT E521030 T1 ATE521030 T1 AT E521030T1
Authority
AT
Austria
Prior art keywords
data
flash memory
data storage
writes
storage
Prior art date
Application number
AT07743724T
Other languages
English (en)
Inventor
Noboru Kawai
Tadashi Arakawa
Original Assignee
Buffalo Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Buffalo Inc filed Critical Buffalo Inc
Application granted granted Critical
Publication of ATE521030T1 publication Critical patent/ATE521030T1/de

Links

Classifications

    • GPHYSICS
    • G06COMPUTING OR CALCULATING; COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/06Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
    • G06F3/0601Interfaces specially adapted for storage systems
    • G06F3/0628Interfaces specially adapted for storage systems making use of a particular technique
    • G06F3/0629Configuration or reconfiguration of storage systems
    • G06F3/0631Configuration or reconfiguration of storage systems by allocating resources to storage systems
    • GPHYSICS
    • G06COMPUTING OR CALCULATING; COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F11/00Error detection; Error correction; Monitoring
    • G06F11/07Responding to the occurrence of a fault, e.g. fault tolerance
    • G06F11/08Error detection or correction by redundancy in data representation, e.g. by using checking codes
    • G06F11/10Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's
    • G06F11/1008Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's in individual solid state devices
    • G06F11/1068Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's in individual solid state devices in sector programmable memories, e.g. flash disk
    • GPHYSICS
    • G06COMPUTING OR CALCULATING; COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/06Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
    • G06F3/0601Interfaces specially adapted for storage systems
    • G06F3/0602Interfaces specially adapted for storage systems specifically adapted to achieve a particular effect
    • G06F3/0614Improving the reliability of storage systems
    • GPHYSICS
    • G06COMPUTING OR CALCULATING; COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/06Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
    • G06F3/0601Interfaces specially adapted for storage systems
    • G06F3/0668Interfaces specially adapted for storage systems adopting a particular infrastructure
    • G06F3/0671In-line storage system
    • G06F3/0673Single storage device
    • G06F3/0679Non-volatile semiconductor memory device, e.g. flash memory, one time programmable memory [OTP]

Landscapes

  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Human Computer Interaction (AREA)
  • Quality & Reliability (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)
  • Signal Processing For Digital Recording And Reproducing (AREA)
  • Communication Control (AREA)
  • Read Only Memory (AREA)
  • Information Retrieval, Db Structures And Fs Structures Therefor (AREA)
AT07743724T 2006-05-18 2007-05-14 Datenspeicheranordnung und datenspeicherverfahren ATE521030T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2006138780A JP4700562B2 (ja) 2006-05-18 2006-05-18 データ記憶装置およびデータ記憶方法
PCT/JP2007/060289 WO2007136018A1 (ja) 2006-05-18 2007-05-14 データ記憶装置およびデータ記憶方法

Publications (1)

Publication Number Publication Date
ATE521030T1 true ATE521030T1 (de) 2011-09-15

Family

ID=38723330

Family Applications (1)

Application Number Title Priority Date Filing Date
AT07743724T ATE521030T1 (de) 2006-05-18 2007-05-14 Datenspeicheranordnung und datenspeicherverfahren

Country Status (7)

Country Link
US (1) US8136015B2 (de)
EP (1) EP2031492B1 (de)
JP (1) JP4700562B2 (de)
CN (1) CN101449234B (de)
AT (1) ATE521030T1 (de)
TW (1) TW200821909A (de)
WO (1) WO2007136018A1 (de)

Families Citing this family (59)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8103936B2 (en) * 2007-10-17 2012-01-24 Micron Technology, Inc. System and method for data read of a synchronous serial interface NAND
JP2009211234A (ja) * 2008-03-01 2009-09-17 Toshiba Corp メモリシステム
TWI389127B (zh) * 2008-08-01 2013-03-11 Jmicron Technology Corp 快閃記憶體的配置方法
TWI406175B (zh) * 2008-08-20 2013-08-21 Nuvoton Technology Corp 記憶卡以及用於記憶卡之方法
US8555143B2 (en) * 2008-12-22 2013-10-08 Industrial Technology Research Institute Flash memory controller and the method thereof
US8595593B2 (en) * 2008-12-24 2013-11-26 Hynix Semiconductor Inc. Nonvolatile memory device having a copy back operation and method of operating the same
TWI383399B (zh) * 2009-03-03 2013-01-21 Wistron Corp 嵌入式電子裝置及資料儲存方法
WO2010116538A1 (en) * 2009-04-06 2010-10-14 Hitachi, Ltd. Storage apparatus and data transfer method
TWI472945B (zh) * 2009-04-14 2015-02-11 Fineart Technology Co Ltd 外接式儲存裝置及其製造方法與資訊安全管理方法
US8688894B2 (en) * 2009-09-03 2014-04-01 Pioneer Chip Technology Ltd. Page based management of flash storage
US8381077B2 (en) * 2009-09-08 2013-02-19 Lsi Corporation Systems and methods for implementing error correction in relation to a flash memory
US8352839B2 (en) 2010-06-11 2013-01-08 International Business Machines Corporation Encoding data into constrained memory
US8972821B2 (en) * 2010-12-23 2015-03-03 Texas Instruments Incorporated Encode and multiplex, register, and decode and error correction circuitry
US8886990B2 (en) * 2011-01-27 2014-11-11 Apple Inc. Block management schemes in hybrid SLC/MLC memory
US20120226949A1 (en) * 2011-03-02 2012-09-06 Texas Instruments Incorporated Multi-Channel Bus Protection
JP5458064B2 (ja) * 2011-07-14 2014-04-02 株式会社東芝 不揮発性半導体メモリ
CN102915207A (zh) * 2011-08-01 2013-02-06 建兴电子科技股份有限公司 固态储存装置及其数据储存方法
US8700834B2 (en) 2011-09-06 2014-04-15 Western Digital Technologies, Inc. Systems and methods for an enhanced controller architecture in data storage systems
US9195530B1 (en) 2011-09-06 2015-11-24 Western Digital Technologies, Inc. Systems and methods for improved data management in data storage systems
US8713357B1 (en) * 2011-09-06 2014-04-29 Western Digital Technologies, Inc. Systems and methods for detailed error reporting in data storage systems
US8707104B1 (en) 2011-09-06 2014-04-22 Western Digital Technologies, Inc. Systems and methods for error injection in data storage systems
EP2761476B1 (de) 2011-09-30 2017-10-25 Intel Corporation Vorrichtung, verfahren und system zur bios-speicherung in einer nichtflüchtige ram-speicherzelle
EP2761465B1 (de) 2011-09-30 2022-02-09 Intel Corporation Autonome initialisierung nichtflüchtiger ram-speicherzellen in einem rechnersystem
CN103946811B (zh) 2011-09-30 2017-08-11 英特尔公司 用于实现具有不同操作模式的多级存储器分级结构的设备和方法
WO2013048483A1 (en) * 2011-09-30 2013-04-04 Intel Corporation Platform storage hierarchy with non-volatile random access memory having configurable partitions
US9529708B2 (en) 2011-09-30 2016-12-27 Intel Corporation Apparatus for configuring partitions within phase change memory of tablet computer with integrated memory controller emulating mass storage to storage driver based on request from software
US10359949B2 (en) * 2011-10-31 2019-07-23 Apple Inc. Systems and methods for obtaining and using nonvolatile memory health information
CN103164351B (zh) * 2011-12-16 2016-04-27 宏碁股份有限公司 数据存取方法
US9015519B2 (en) * 2012-01-31 2015-04-21 Symantec Corporation Method and system for cluster wide adaptive I/O scheduling by a multipathing driver
US9053008B1 (en) 2012-03-26 2015-06-09 Western Digital Technologies, Inc. Systems and methods for providing inline parameter service in data storage devices
US9135097B2 (en) * 2012-03-27 2015-09-15 Oracle International Corporation Node death detection by querying
US9146856B2 (en) 2012-04-10 2015-09-29 Micron Technology, Inc. Remapping and compacting in a memory device
US9116792B2 (en) * 2012-05-18 2015-08-25 Silicon Motion, Inc. Data storage device and method for flash block management
TWI475387B (zh) * 2012-07-19 2015-03-01 Jmicron Technology Corp 記憶體控制方法及記憶體控制電路
US9098445B2 (en) * 2013-03-14 2015-08-04 Apple Inc. Selection of redundant storage configuration based on available memory space
US9337873B2 (en) 2013-05-24 2016-05-10 SK Hynix Inc. Miscorrection detection for error correcting codes using bit reliabilities
TWI497280B (zh) * 2013-07-08 2015-08-21 Phison Electronics Corp 資料保護方法、記憶體儲存裝置與記憶體控制器
CN104346561B (zh) * 2013-07-29 2017-12-29 联想(北京)有限公司 一种保护存储单元的方法及装置
JP2015176309A (ja) * 2014-03-14 2015-10-05 株式会社東芝 半導体記憶装置
JP6185668B2 (ja) * 2014-07-25 2017-08-23 株式会社日立製作所 ストレージ装置
KR20160073834A (ko) * 2014-12-17 2016-06-27 에스케이하이닉스 주식회사 메모리 시스템 및 메모리 시스템 동작 방법
CN104503705B (zh) * 2014-12-22 2017-08-08 吴剀劼 利用闪存设备构建可信存储系统的方法及构建的可信存储系统
JP6901831B2 (ja) * 2015-05-26 2021-07-14 株式会社半導体エネルギー研究所 メモリシステム、及び情報処理システム
US10108559B2 (en) * 2015-06-17 2018-10-23 Xitron LLC Apparatus for transmitting data through the universal serial bus, converting to SCSI protocols for computer peripherals
TWI575530B (zh) * 2015-08-06 2017-03-21 慧榮科技股份有限公司 存取快閃記憶體模組的方法及相關的快閃記憶體控制器與記憶裝置
JP6527054B2 (ja) 2015-08-28 2019-06-05 東芝メモリ株式会社 メモリシステム
EP3362903A4 (de) * 2016-01-29 2019-06-05 Hewlett-Packard Enterprise Development LP Überwachung von systemzustandsinformationen
US10515006B2 (en) 2016-07-29 2019-12-24 Samsung Electronics Co., Ltd. Pseudo main memory system
TWI710903B (zh) * 2016-09-30 2020-11-21 南韓商三星電子股份有限公司 偽主記憶體系統及操作該系統的方法
US10218387B2 (en) * 2017-05-08 2019-02-26 Silicon Laboratories Inc. ECC memory controller supporting secure and non-secure regions
US10360104B2 (en) 2017-05-08 2019-07-23 Silicon Laboratories Inc. ECC memory controller to detect dangling pointers
EP3590037A4 (de) 2017-07-25 2020-07-08 Aurora Labs Ltd Konstruktion von software-delta-updates für fahrzeug-ecu-software und anomalitätsdetektion auf basis einer toolchain
TWI658361B (zh) * 2017-09-05 2019-05-01 群聯電子股份有限公司 記憶體管理方法、記憶體控制電路單元與記憶體儲存裝置
TWI644215B (zh) 2017-11-02 2018-12-11 慧榮科技股份有限公司 用來控制一資料儲存裝置的運作之方法以及資料儲存裝置及其控制器
TWI643066B (zh) 2018-01-15 2018-12-01 慧榮科技股份有限公司 用來於一記憶裝置中重新使用關於垃圾收集的一目的地區塊之方法、記憶裝置及其控制器以及電子裝置
CN111324554B (zh) * 2020-02-18 2022-03-18 日立楼宇技术(广州)有限公司 闪存数据的管理方法及装置、电梯控制器
US11314427B2 (en) * 2020-08-21 2022-04-26 Micron Technology, Inc. Memory device with enhanced data reliability capabilities
US12197766B2 (en) * 2020-11-10 2025-01-14 Micron Technology, Inc. Error injection methods using soft post-package repair (sPPR) techniques and memory devices and memory systems employing the same
JP2024135932A (ja) * 2023-03-23 2024-10-04 キオクシア株式会社 記憶装置及び記憶装置の駆動方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2785068B2 (ja) * 1990-06-25 1998-08-13 株式会社ゼクセル 車輌用データの記憶方法
JPH04349593A (ja) * 1991-05-27 1992-12-04 Tokyo Electric Co Ltd 商品登録処理装置
JPH0816327A (ja) * 1994-06-27 1996-01-19 Shikoku Nippon Denki Software Kk ディスクアレイ装置
JP2000207137A (ja) 1999-01-12 2000-07-28 Kowa Co 情報記憶装置
GB0123416D0 (en) * 2001-09-28 2001-11-21 Memquest Ltd Non-volatile memory control
US6925541B2 (en) * 2002-06-12 2005-08-02 Hitachi, Ltd. Method and apparatus for managing replication volumes
JP2004139503A (ja) * 2002-10-21 2004-05-13 Matsushita Electric Ind Co Ltd 記憶装置及びその制御方法
US7130229B2 (en) 2002-11-08 2006-10-31 Intel Corporation Interleaved mirrored memory systems
TW591393B (en) * 2003-01-22 2004-06-11 Fujitsu Ltd Memory controller
CN1722096A (zh) * 2004-07-13 2006-01-18 鸿富锦精密工业(深圳)有限公司 多磁盘容错系统及方法
WO2009141752A2 (en) * 2008-05-19 2009-11-26 Axxana (Israel) Ltd. Resilient data storage in the presence of replication faults and rolling disasters

Also Published As

Publication number Publication date
JP2007310636A (ja) 2007-11-29
CN101449234A (zh) 2009-06-03
EP2031492B1 (de) 2011-08-17
JP4700562B2 (ja) 2011-06-15
WO2007136018A1 (ja) 2007-11-29
TW200821909A (en) 2008-05-16
TWI355605B (de) 2012-01-01
EP2031492A1 (de) 2009-03-04
EP2031492A4 (de) 2010-07-21
US20090158124A1 (en) 2009-06-18
CN101449234B (zh) 2012-05-30
US8136015B2 (en) 2012-03-13

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