ATE521082T1 - Molekülbindungsverfahren mit flusssäure-reinigung in der dampfphase und abspülen mit entionisiertem wasser - Google Patents

Molekülbindungsverfahren mit flusssäure-reinigung in der dampfphase und abspülen mit entionisiertem wasser

Info

Publication number
ATE521082T1
ATE521082T1 AT08354013T AT08354013T ATE521082T1 AT E521082 T1 ATE521082 T1 AT E521082T1 AT 08354013 T AT08354013 T AT 08354013T AT 08354013 T AT08354013 T AT 08354013T AT E521082 T1 ATE521082 T1 AT E521082T1
Authority
AT
Austria
Prior art keywords
hydrofluoric acid
dedioned
rinsing
water
bonding process
Prior art date
Application number
AT08354013T
Other languages
English (en)
Inventor
Frank Fournel
Hubert Moriceau
Christophe Morales
Pierre Perreau
Original Assignee
Commissariat Energie Atomique
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat Energie Atomique filed Critical Commissariat Energie Atomique
Application granted granted Critical
Publication of ATE521082T1 publication Critical patent/ATE521082T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/10—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H10P70/12—Cleaning before device manufacture, i.e. Begin-Of-Line process by dry cleaning only
    • H10P70/125—Cleaning before device manufacture, i.e. Begin-Of-Line process by dry cleaning only with gaseous HF
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P10/00—Bonding of wafers, substrates or parts of devices
    • H10P10/12—Bonding of semiconductor wafers or semiconductor substrates to semiconductor wafers or semiconductor substrates
    • H10P10/128—Bonding of semiconductor wafers or semiconductor substrates to semiconductor wafers or semiconductor substrates by direct semiconductor to semiconductor bonding

Landscapes

  • Cleaning Or Drying Semiconductors (AREA)
  • Manufacture Of Macromolecular Shaped Articles (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
AT08354013T 2007-02-19 2008-02-07 Molekülbindungsverfahren mit flusssäure-reinigung in der dampfphase und abspülen mit entionisiertem wasser ATE521082T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0701168A FR2912840B1 (fr) 2007-02-19 2007-02-19 Procede de collage moleculaire avec nettoyage a l'acide fluorhydrique en phase vapeur et rincage a l'eau deionisee

Publications (1)

Publication Number Publication Date
ATE521082T1 true ATE521082T1 (de) 2011-09-15

Family

ID=38561203

Family Applications (1)

Application Number Title Priority Date Filing Date
AT08354013T ATE521082T1 (de) 2007-02-19 2008-02-07 Molekülbindungsverfahren mit flusssäure-reinigung in der dampfphase und abspülen mit entionisiertem wasser

Country Status (5)

Country Link
US (1) US8382933B2 (de)
EP (1) EP1959478B1 (de)
JP (1) JP5148313B2 (de)
AT (1) ATE521082T1 (de)
FR (1) FR2912840B1 (de)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR3074959B1 (fr) * 2017-12-08 2019-12-20 Commissariat A L'energie Atomique Et Aux Energies Alternatives Procede de collage par adhesion directe

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3175323B2 (ja) * 1991-08-26 2001-06-11 株式会社デンソー 半導体基板の製造方法
US5451547A (en) * 1991-08-26 1995-09-19 Nippondenso Co., Ltd. Method of manufacturing semiconductor substrate
US5783495A (en) * 1995-11-13 1998-07-21 Micron Technology, Inc. Method of wafer cleaning, and system and cleaning solution regarding same
US5851303A (en) * 1996-05-02 1998-12-22 Hemlock Semiconductor Corporation Method for removing metal surface contaminants from silicon
US6065481A (en) * 1997-03-26 2000-05-23 Fsi International, Inc. Direct vapor delivery of enabling chemical for enhanced HF etch process performance
US6740247B1 (en) 1999-02-05 2004-05-25 Massachusetts Institute Of Technology HF vapor phase wafer cleaning and oxide etching
US6787885B2 (en) * 2002-11-04 2004-09-07 The United States Of America As Represented By The Secretary Of The Navy Low temperature hydrophobic direct wafer bonding
US20050070120A1 (en) * 2003-08-28 2005-03-31 International Sematech Methods and devices for an insulated dielectric interface between high-k material and silicon

Also Published As

Publication number Publication date
US20080196747A1 (en) 2008-08-21
EP1959478A3 (de) 2010-05-05
US8382933B2 (en) 2013-02-26
FR2912840B1 (fr) 2009-04-24
EP1959478A2 (de) 2008-08-20
FR2912840A1 (fr) 2008-08-22
JP5148313B2 (ja) 2013-02-20
JP2008205473A (ja) 2008-09-04
EP1959478B1 (de) 2011-08-17

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