ATE521915T1 - Verfahren zur erzeugung einer strukturierten schicht auf einem substrat - Google Patents

Verfahren zur erzeugung einer strukturierten schicht auf einem substrat

Info

Publication number
ATE521915T1
ATE521915T1 AT06819306T AT06819306T ATE521915T1 AT E521915 T1 ATE521915 T1 AT E521915T1 AT 06819306 T AT06819306 T AT 06819306T AT 06819306 T AT06819306 T AT 06819306T AT E521915 T1 ATE521915 T1 AT E521915T1
Authority
AT
Austria
Prior art keywords
producing
substrate
stepper
tools
structured layer
Prior art date
Application number
AT06819306T
Other languages
English (en)
Inventor
Michael Chudzik
Joseph Shepard
Original Assignee
Ibm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ibm filed Critical Ibm
Application granted granted Critical
Publication of ATE521915T1 publication Critical patent/ATE521915T1/de

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20Exposure; Apparatus therefor
    • G03F7/2035Exposure; Apparatus therefor simultaneous coating and exposure; using a belt mask, e.g. endless
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16Coating processes; Apparatus therefor
    • G03F7/168Finishing the coated layer, e.g. drying, baking, soaking
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0035Multiple processes, e.g. applying a further resist layer on an already in a previously step, processed pattern or textured surface
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20Exposure; Apparatus therefor
    • G03F7/2002Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20Exposure; Apparatus therefor
    • G03F7/2037Exposure with X-ray radiation or corpuscular radiation, through a mask with a pattern opaque to that radiation

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Chemical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
AT06819306T 2005-12-01 2006-11-07 Verfahren zur erzeugung einer strukturierten schicht auf einem substrat ATE521915T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/164,684 US7871933B2 (en) 2005-12-01 2005-12-01 Combined stepper and deposition tool
PCT/EP2006/068188 WO2007062962A1 (en) 2005-12-01 2006-11-07 Combined stepper and deposition tool

Publications (1)

Publication Number Publication Date
ATE521915T1 true ATE521915T1 (de) 2011-09-15

Family

ID=37698226

Family Applications (1)

Application Number Title Priority Date Filing Date
AT06819306T ATE521915T1 (de) 2005-12-01 2006-11-07 Verfahren zur erzeugung einer strukturierten schicht auf einem substrat

Country Status (7)

Country Link
US (1) US7871933B2 (de)
EP (1) EP1955113B1 (de)
JP (1) JP2009517872A (de)
KR (1) KR101063715B1 (de)
CN (1) CN101313250B (de)
AT (1) ATE521915T1 (de)
WO (1) WO2007062962A1 (de)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8815013B2 (en) * 2006-07-19 2014-08-26 Intermolecular, Inc. Method and system for isolated and discretized process sequence integration
US8017183B2 (en) * 2007-09-26 2011-09-13 Eastman Kodak Company Organosiloxane materials for selective area deposition of inorganic materials
US8296859B2 (en) * 2008-03-24 2012-10-23 The Board Of Trustees Of The Leland Stanford Junior University Prototyping station for atomic force microscope-assisted deposition of nanostructures
WO2009120343A1 (en) * 2008-03-24 2009-10-01 The Board Of Trustees Of The Leland Stanford Junior University Selective oxidative removal of a self-assembled monolayer for controlled nanofabrication

Family Cites Families (36)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55129345A (en) 1979-03-29 1980-10-07 Ulvac Corp Electron beam plate making method by vapor phase film formation and vapor phase development
US4588801A (en) 1984-04-05 1986-05-13 The United States Of America As Represented By The United States Department Of Energy Polysilane positive photoresist materials and methods for their use
US5310624A (en) 1988-01-29 1994-05-10 Massachusetts Institute Of Technology Integrated circuit micro-fabrication using dry lithographic processes
JP2849458B2 (ja) * 1990-07-03 1999-01-20 キヤノン株式会社 半導体装置の製造方法および製造装置
DE69133169D1 (de) 1990-05-09 2003-01-16 Canon Kk Verfahren zur Erzeugung einer Struktur und Verfahren zum Vorbereiten einer halbleitenden Anordnung mit Hilfe dieses Verfahrens
JPH0437029A (ja) * 1990-05-31 1992-02-07 Canon Inc 半導体装置の配線形成方法
US5618379A (en) 1991-04-01 1997-04-08 International Business Machines Corporation Selective deposition process
JPH07254556A (ja) 1993-09-03 1995-10-03 Hitachi Ltd パターン形成方法および形成装置
JP3817749B2 (ja) 1994-03-17 2006-09-06 日産化学工業株式会社 紫外線照射によるシリカ含有無機酸化物被膜のパターン形成用コーティング剤及びパターン形成方法
JP3272610B2 (ja) * 1996-09-09 2002-04-08 三洋電機株式会社 金属薄膜の形成方法
JPH11191539A (ja) * 1997-10-22 1999-07-13 Sanyo Electric Co Ltd 金属配線の形成方法
JP4099278B2 (ja) 1998-11-25 2008-06-11 ジーイー横河メディカルシステム株式会社 導電パターン形成方法および装置、超音波トランスデューサ並びに超音波撮像装置
KR100543393B1 (ko) * 2000-03-09 2006-01-20 후지쯔 가부시끼가이샤 반도체 장치 및 그 제조 방법
TW490997B (en) * 2000-03-31 2002-06-11 Seiko Epson Corp Method of manufacturing organic EL element, and organic EL element
JP3921917B2 (ja) * 2000-03-31 2007-05-30 セイコーエプソン株式会社 微細構造体の製造方法
JP3687651B2 (ja) * 2000-06-08 2005-08-24 ジニテック インク. 薄膜形成方法
JP4138312B2 (ja) * 2000-12-28 2008-08-27 セイコーエプソン株式会社 薄膜形成方法、および電子機器
TW471024B (en) * 2001-01-20 2002-01-01 United Microelectronics Corp Lithography etching method
JP4366920B2 (ja) * 2002-11-07 2009-11-18 ソニー株式会社 平面型表示装置及びその製造方法
US6969690B2 (en) * 2003-03-21 2005-11-29 The University Of North Carolina At Chapel Hill Methods and apparatus for patterned deposition of nanostructure-containing materials by self-assembly and related articles
JP2004351305A (ja) * 2003-05-28 2004-12-16 Seiko Epson Corp 薄膜パターン形成方法、デバイスとその製造方法及び電気光学装置並びに電子機器
US7071022B2 (en) 2003-07-18 2006-07-04 Corning Incorporated Silicon crystallization using self-assembled monolayers
US20050017624A1 (en) * 2003-07-23 2005-01-27 Thomas Novet Electron emitter with epitaxial layers
KR20060081409A (ko) * 2003-09-08 2006-07-12 마츠시타 덴끼 산교 가부시키가이샤 디스크 원반의 제조방법, 디스크 원반의 제조장치, 디스크원반의 이동거리 차 검출방법, 및 디스크 원반의 이동거리차 검출장치
JP2005135975A (ja) * 2003-10-28 2005-05-26 Seiko Epson Corp 電極の形成方法、並びに圧電体デバイス、強誘電体デバイス、及び電子機器
GB0326904D0 (en) 2003-11-19 2003-12-24 Koninkl Philips Electronics Nv Formation of self-assembled monolayers
US7208094B2 (en) * 2003-12-17 2007-04-24 Hewlett-Packard Development Company, L.P. Methods of bridging lateral nanowires and device using same
US7589822B2 (en) * 2004-02-02 2009-09-15 Nikon Corporation Stage drive method and stage unit, exposure apparatus, and device manufacturing method
JP2007522524A (ja) * 2004-02-11 2007-08-09 インターナショナル・ビジネス・マシーンズ・コーポレーション クロム基板又は感応性基板上のパターン形成されたレジスト・プロファイルを向上させるための混合基の使用
US7030001B2 (en) * 2004-04-19 2006-04-18 Freescale Semiconductor, Inc. Method for forming a gate electrode having a metal
US7268074B2 (en) * 2004-06-14 2007-09-11 Enthone, Inc. Capping of metal interconnects in integrated circuit electronic devices
US7138067B2 (en) * 2004-09-27 2006-11-21 Lam Research Corporation Methods and apparatus for tuning a set of plasma processing steps
US7367110B2 (en) * 2004-09-27 2008-05-06 Hitachi Global Storage Technologies Netherlands B.V. Method of fabricating a read head having shaped read sensor-biasing layer junctions using partial milling
JP4776247B2 (ja) * 2005-02-09 2011-09-21 富士通株式会社 配線基板及びその製造方法
KR100724102B1 (ko) * 2005-02-14 2007-06-04 한국표준과학연구원 나노판을 이용한 나노부품, 그 제조방법 및 나노기계의 제작방법
US7279085B2 (en) * 2005-07-19 2007-10-09 General Electric Company Gated nanorod field emitter structures and associated methods of fabrication

Also Published As

Publication number Publication date
WO2007062962A1 (en) 2007-06-07
US20070128859A1 (en) 2007-06-07
CN101313250B (zh) 2011-06-29
EP1955113A1 (de) 2008-08-13
KR101063715B1 (ko) 2011-09-07
EP1955113B1 (de) 2011-08-24
KR20080071597A (ko) 2008-08-04
JP2009517872A (ja) 2009-04-30
CN101313250A (zh) 2008-11-26
US7871933B2 (en) 2011-01-18

Similar Documents

Publication Publication Date Title
TW200606179A (en) Material for forming resist protection film for liquid immersion lithography and method for forming resist pattern by using the protection film
TW200739248A (en) Photomask, method for manufacturing such photomask, pattern forming method using such photomask and mask data creating method
JP2009539252A5 (de)
TW200518172A (en) Photomask, and method for forming pattern
DE60239401D1 (de) Lithographische methode zur erzeugung eines elements
TW200801801A (en) Process for producing patterned film and photosensitive resin composition
DE602004025041D1 (de) Verfahren zur erzeugung einer vertiefung in einer oberfläche einer schicht aus fotoresist
WO2008117719A1 (ja) 表面凹凸の作製方法
DE602006020202D1 (de) Plasmaätzverfahren für eine Fotomaske unter Verwendung einer geschützten Maske
ATE521915T1 (de) Verfahren zur erzeugung einer strukturierten schicht auf einem substrat
DE60326861D1 (de) Lithographisches verfahren zur verdrahtung einer seitenoberfläche eines substrats
TW200702801A (en) Method of forming bank, method of forming film pattern, semiconductor device, electro optic device, and electronic apparatus
TW200603253A (en) A semiconductor manufacturing method and an exposure mask
TW200641073A (en) Polymer for forming anti-reflective coating layer
WO2010140870A3 (ko) 반도체 소자의 미세 패턴 형성 방법
TW200631989A (en) Polymer for forming anti-reflective coating layer
TW200737302A (en) Method of patterning a layer using a pellicle
TW200728930A (en) Method of forming three dimensional lithographic pattern
TW200724709A (en) A method for forming a mask pattern for ion-implantation
TW200634110A (en) Polymer for forming anti-reflective coating layer
TW200502704A (en) A method of patterning photoresist on a wafer using a transmission mask with a carbon layer
TW200509204A (en) Method of forming resist patterns and method of producing semiconductor device
TW200634441A (en) Mask, reticle and method of making the same
TW200728929A (en) Exposure method of forming three dimensional lithographic pattern
TW200639579A (en) Surface treatment method and mask blank and photomask therefrom

Legal Events

Date Code Title Description
RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties