ATE521985T1 - Halbleiterbauelement mit einem gate-dielektrikum mit hohem k und metall-gate-elektrode - Google Patents

Halbleiterbauelement mit einem gate-dielektrikum mit hohem k und metall-gate-elektrode

Info

Publication number
ATE521985T1
ATE521985T1 AT05770566T AT05770566T ATE521985T1 AT E521985 T1 ATE521985 T1 AT E521985T1 AT 05770566 T AT05770566 T AT 05770566T AT 05770566 T AT05770566 T AT 05770566T AT E521985 T1 ATE521985 T1 AT E521985T1
Authority
AT
Austria
Prior art keywords
semiconductor component
gate electrode
gate dielectric
metal gate
metal
Prior art date
Application number
AT05770566T
Other languages
English (en)
Inventor
Mark Doczy
Jack Kavalieros
Matthew Metz
Justin Brask
Suman Datta
Robert Chau
Original Assignee
Intel Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Intel Corp filed Critical Intel Corp
Application granted granted Critical
Publication of ATE521985T1 publication Critical patent/ATE521985T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P10/00—Bonding of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/013—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator
    • H10D64/01302—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H10D64/01332—Making the insulator
    • H10D64/01336—Making the insulator on single crystalline silicon, e.g. chemical oxidation using a liquid
    • H10D64/01342—Making the insulator on single crystalline silicon, e.g. chemical oxidation using a liquid by deposition, e.g. evaporation, ALD or laser deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/667—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor comprising a layer of alloy material, compound material or organic material contacting the insulator, e.g. TiN workfunction layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • H10D84/0172—Manufacturing their gate conductors
    • H10D84/0177—Manufacturing their gate conductors the gate conductors having different materials or different implants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/017—Manufacture or treatment using dummy gates in processes wherein at least parts of the final gates are self-aligned to the dummy gates, i.e. replacement gate processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/691—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator comprising metallic compounds, e.g. metal oxides or metal silicates 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/693—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator the insulator comprising nitrogen, e.g. nitrides, oxynitrides or nitrogen-doped materials

Landscapes

  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Junction Field-Effect Transistors (AREA)
AT05770566T 2004-07-20 2005-07-08 Halbleiterbauelement mit einem gate-dielektrikum mit hohem k und metall-gate-elektrode ATE521985T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/896,124 US7148548B2 (en) 2004-07-20 2004-07-20 Semiconductor device with a high-k gate dielectric and a metal gate electrode
PCT/US2005/024489 WO2006019675A1 (en) 2004-07-20 2005-07-08 A semiconductor device with a high-k gate dielectric and a metal gate electrode

Publications (1)

Publication Number Publication Date
ATE521985T1 true ATE521985T1 (de) 2011-09-15

Family

ID=35159728

Family Applications (1)

Application Number Title Priority Date Filing Date
AT05770566T ATE521985T1 (de) 2004-07-20 2005-07-08 Halbleiterbauelement mit einem gate-dielektrikum mit hohem k und metall-gate-elektrode

Country Status (8)

Country Link
US (1) US7148548B2 (de)
EP (1) EP1790006B1 (de)
JP (2) JP4959561B2 (de)
KR (1) KR100852387B1 (de)
CN (2) CN102867850A (de)
AT (1) ATE521985T1 (de)
TW (1) TWI304265B (de)
WO (1) WO2006019675A1 (de)

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KR100852387B1 (ko) 2008-08-14
US20060017098A1 (en) 2006-01-26
EP1790006A1 (de) 2007-05-30
EP1790006B1 (de) 2011-08-24
JP2008507149A (ja) 2008-03-06
TW200625631A (en) 2006-07-16
CN102867850A (zh) 2013-01-09
KR20070020140A (ko) 2007-02-16
US7148548B2 (en) 2006-12-12
WO2006019675A1 (en) 2006-02-23
JP4959561B2 (ja) 2012-06-27
JP2012109598A (ja) 2012-06-07
TWI304265B (en) 2008-12-11
CN101036225A (zh) 2007-09-12

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