ATE522024T1 - Strombegrenzungsschaltung für rf- leistungsverstärker - Google Patents

Strombegrenzungsschaltung für rf- leistungsverstärker

Info

Publication number
ATE522024T1
ATE522024T1 AT05807212T AT05807212T ATE522024T1 AT E522024 T1 ATE522024 T1 AT E522024T1 AT 05807212 T AT05807212 T AT 05807212T AT 05807212 T AT05807212 T AT 05807212T AT E522024 T1 ATE522024 T1 AT E522024T1
Authority
AT
Austria
Prior art keywords
current
voltage
circuit
power control
limit
Prior art date
Application number
AT05807212T
Other languages
English (en)
Inventor
John Hug
Dmitri Prikhodko
Bezooijen Adrianus Van
Original Assignee
Nxp Bv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nxp Bv filed Critical Nxp Bv
Application granted granted Critical
Publication of ATE522024T1 publication Critical patent/ATE522024T1/de

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/52—Circuit arrangements for protecting such amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/456—A scaled replica of a transistor being present in an amplifier
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/462—Indexing scheme relating to amplifiers the current being sensed
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/474—A current mirror being used as sensor
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/477—Paralleled transistors are used as sensors

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Amplifiers (AREA)
AT05807212T 2004-11-29 2005-11-23 Strombegrenzungsschaltung für rf- leistungsverstärker ATE522024T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP04106137 2004-11-29
PCT/IB2005/053884 WO2006056952A2 (en) 2004-11-29 2005-11-23 Current limiting circuit for rf power amplifier

Publications (1)

Publication Number Publication Date
ATE522024T1 true ATE522024T1 (de) 2011-09-15

Family

ID=36498339

Family Applications (1)

Application Number Title Priority Date Filing Date
AT05807212T ATE522024T1 (de) 2004-11-29 2005-11-23 Strombegrenzungsschaltung für rf- leistungsverstärker

Country Status (6)

Country Link
US (1) US7873335B2 (de)
EP (1) EP1820269B1 (de)
JP (1) JP2008522475A (de)
CN (1) CN101124723B (de)
AT (1) ATE522024T1 (de)
WO (1) WO2006056952A2 (de)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7957709B1 (en) * 2008-03-05 2011-06-07 Triquint Semiconductor, Inc. Beta correction block
US7692468B1 (en) * 2008-09-19 2010-04-06 Qualcomm Incorporated Voltage clamp
US8098102B2 (en) * 2009-02-03 2012-01-17 Renesas Electronics Corporation RF power amplifier and RF power module using the same
EP2401812B1 (de) 2009-02-25 2013-11-13 Nxp B.V. Verfahren und vorrichtung zur aufrechterhaltung von schaltungsstabilität
JP5272872B2 (ja) * 2009-04-20 2013-08-28 富士通株式会社 増幅回路、入力バイアス調整方法、及び電源電圧調整方法
CN101651477B (zh) * 2009-09-04 2013-01-02 惠州市正源微电子有限公司 射频功率放大器效率的增强方法及其效率增强电路
US8890616B2 (en) 2010-12-05 2014-11-18 Rf Micro Devices (Cayman Islands), Ltd. Power amplifier system with a current bias signal path
WO2014028667A1 (en) * 2012-08-15 2014-02-20 Skyworks Solutions, Inc. Systems, circuits and methods related to controllers for radio-frequency power amplifiers
US9698853B2 (en) * 2013-07-31 2017-07-04 Skyworks Solutions, Inc. Power amplifier open loop current clamp
US10770802B2 (en) 2014-11-10 2020-09-08 Qorvo Us, Inc. Antenna on a device assembly
US9793859B1 (en) 2016-09-27 2017-10-17 Raytheon Company Amplifier output power limiting circuitry
US10187019B1 (en) * 2018-03-26 2019-01-22 Qorvo Us, Inc. Phased array antenna system
US11309882B2 (en) 2019-12-20 2022-04-19 Texas Instruments Incorporated OPAMP overload power limit circuit, system, and a method thereof
US12424984B2 (en) 2021-04-14 2025-09-23 Samsung Electronics Co., Ltd Power amplification circuit including protection circuit and electronic device including power amplification circuit
CN114285426B (zh) * 2021-11-25 2023-12-12 深圳市紫光同创电子有限公司 一种SerDes发送器输出摆幅控制装置及方法

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4442407A (en) * 1982-06-11 1984-04-10 The United States Of America As Represented By The Secretary Of The Army Two loop automatic level control for power amplifier
GB2287371B (en) * 1994-03-11 1998-12-16 Motorola Israel Ltd Radio transmitter power amplifier calibration
JP3922773B2 (ja) * 1997-11-27 2007-05-30 三菱電機株式会社 電力増幅器
US6137366A (en) * 1998-04-07 2000-10-24 Maxim Integrated Products, Inc. High VSWR mismatch output stage
US6252915B1 (en) * 1998-09-09 2001-06-26 Qualcomm Incorporated System and method for gaining control of individual narrowband channels using a wideband power measurement
US6430402B1 (en) * 1998-09-14 2002-08-06 Conexant Systems, Inc. Power amplifier saturation prevention method, apparatus, and communication system incorporating the same
US6449463B1 (en) * 1998-10-29 2002-09-10 Qualcomm, Incorporated Variable loop gain in double loop power control systems
US6178313B1 (en) * 1998-12-31 2001-01-23 Nokia Mobile Phones Limited Control of gain and power consumption in a power amplifier
JP3471648B2 (ja) * 1999-02-26 2003-12-02 富士通カンタムデバイス株式会社 パワーアンプ回路及びそのバイアス回路
US6476677B1 (en) * 2000-08-30 2002-11-05 Skyworks Solutions, Inc. Power amplifier saturation detection and compensation
JP3904817B2 (ja) * 2000-08-31 2007-04-11 株式会社ルネサステクノロジ 電力増幅器モジュール
US6665525B2 (en) * 2001-05-29 2003-12-16 Ericsson Inc. High-level modulation method and apparatus
US6701138B2 (en) * 2001-06-11 2004-03-02 Rf Micro Devices, Inc. Power amplifier control
JP2003078362A (ja) * 2001-09-03 2003-03-14 Toshiba Corp 電力用半導体装置
KR100630340B1 (ko) * 2002-05-22 2006-10-02 학교법인 한국정보통신학원 전력증폭기의 바이어스 제어 회로
WO2004054094A1 (en) * 2002-12-09 2004-06-24 Koninklijke Philips Electronics N.V. Amplifier circuit having an extended wilson current-mirror self-bias boosting circuit
ITMI20030075A1 (it) * 2003-01-20 2004-07-21 Simicroelectronics S R L Amplificatore di rilevamneto parallelo con specchiamento della corrente da misurare su ogni ramo di riferimento.
JP3829121B2 (ja) * 2003-01-31 2006-10-04 株式会社東芝 電力増幅回路
US7433658B1 (en) * 2003-09-30 2008-10-07 Marvell International Ltd. System and method for controlling true output power of a transmitter
US20050206447A1 (en) * 2004-03-18 2005-09-22 Ryo Yamazaki Method to prevent saturation in power amplifier control loop

Also Published As

Publication number Publication date
EP1820269B1 (de) 2011-08-24
US7873335B2 (en) 2011-01-18
US20090170454A1 (en) 2009-07-02
WO2006056952A3 (en) 2007-04-26
JP2008522475A (ja) 2008-06-26
EP1820269A2 (de) 2007-08-22
CN101124723A (zh) 2008-02-13
WO2006056952A2 (en) 2006-06-01
CN101124723B (zh) 2010-06-16

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