ATE522027T1 - Ansteuerschaltung für einen bipolartransistor mit isoliertem gate (igbt) - Google Patents
Ansteuerschaltung für einen bipolartransistor mit isoliertem gate (igbt)Info
- Publication number
- ATE522027T1 ATE522027T1 AT05103783T AT05103783T ATE522027T1 AT E522027 T1 ATE522027 T1 AT E522027T1 AT 05103783 T AT05103783 T AT 05103783T AT 05103783 T AT05103783 T AT 05103783T AT E522027 T1 ATE522027 T1 AT E522027T1
- Authority
- AT
- Austria
- Prior art keywords
- whose
- igbt
- driving circuit
- terminal
- boost capacitor
- Prior art date
Links
- 239000003990 capacitor Substances 0.000 abstract 4
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/04—Modifications for accelerating switching
- H03K17/0406—Modifications for accelerating switching in composite switches
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/06—Modifications for ensuring a fully conducting state
- H03K17/063—Modifications for ensuring a fully conducting state in field-effect transistor switches
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
- H03K17/689—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors with galvanic isolation between the control circuit and the output circuit
Landscapes
- Electronic Switches (AREA)
- Power Conversion In General (AREA)
- Networks Using Active Elements (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FI20045171A FI116109B (fi) | 2004-05-10 | 2004-05-10 | Puolijohdekomponentin ohjauskytkentä |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ATE522027T1 true ATE522027T1 (de) | 2011-09-15 |
Family
ID=32338450
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AT05103783T ATE522027T1 (de) | 2004-05-10 | 2005-05-06 | Ansteuerschaltung für einen bipolartransistor mit isoliertem gate (igbt) |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US7109780B2 (de) |
| EP (1) | EP1596496B1 (de) |
| AT (1) | ATE522027T1 (de) |
| FI (1) | FI116109B (de) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FI118145B (fi) * | 2006-01-09 | 2007-07-13 | Abb Oy | Hilaohjatun kytkimen sammutus |
| JP2008306618A (ja) * | 2007-06-11 | 2008-12-18 | Nissan Motor Co Ltd | 電圧駆動型素子を駆動するための駆動回路 |
| DE102007036728B3 (de) * | 2007-08-03 | 2008-09-11 | Semikron Elektronik Gmbh & Co. Kg | Treiberschaltung zur Ansteuerung eines Leistungshalbleiterschalters |
| CN101888229B (zh) * | 2010-05-25 | 2013-03-27 | 中国电力科学研究院 | 一种新的igbt高压串联阀控制与监测系统 |
| TWI428611B (zh) | 2010-09-10 | 2014-03-01 | Ind Tech Res Inst | 零偏壓式功率偵測器 |
| ITTO20110769A1 (it) * | 2011-08-12 | 2013-02-13 | Magneti Marelli Spa | Dispositivo e metodo di scarica per un condensatore in un impianto elettrico di potenza di un veicolo con trazione elettrica |
| US10224923B2 (en) * | 2012-10-31 | 2019-03-05 | Nxp Usa, Inc. | Method and apparatus for driving a power transistor gate |
| WO2015001373A1 (en) | 2013-07-04 | 2015-01-08 | Freescale Semiconductor, Inc. | A gate drive circuit and a method for setting up a gate drive circuit |
| EP3017542B1 (de) * | 2013-07-04 | 2019-09-11 | NXP USA, Inc. | Gate-treiberschaltung und verfahren zur steuerung eines leistungstransistors |
| JP6842837B2 (ja) * | 2016-03-30 | 2021-03-17 | ローム株式会社 | ゲート駆動回路 |
| DE102016006227B3 (de) * | 2016-05-19 | 2017-08-31 | Audi Ag | Elektrische Schaltungsanordnung |
| DE102016220279A1 (de) * | 2016-10-17 | 2018-04-19 | Robert Bosch Gmbh | Schaltungsanordnung zur Vorladung einer Zwischenkreiskapazität eines Hochvolt-Bordnetzes |
| US10505579B2 (en) * | 2018-02-02 | 2019-12-10 | Samsung Electro-Mechanics Co., Ltd. | Radio frequency switching device for fast switching operation |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0354435B1 (de) * | 1988-08-12 | 1995-12-20 | Hitachi, Ltd. | Treiberschaltung für Transistor mit isoliertem Gate; und deren Verwendung in einem Schalterkreis, einer Stromschalteinrichtung, und einem Induktionsmotorsystem |
| JP2674355B2 (ja) | 1991-05-15 | 1997-11-12 | 三菱電機株式会社 | パワー素子の過電流保護装置 |
| FI97176C (fi) | 1994-09-27 | 1996-10-25 | Abb Industry Oy | Puolijohdekytkimen ohjauspiiri |
| US5500616A (en) * | 1995-01-13 | 1996-03-19 | Ixys Corporation | Overvoltage clamp and desaturation detection circuit |
| EP0814564A1 (de) * | 1996-06-20 | 1997-12-29 | ANSALDO INDUSTRIA S.p.A. | Elektronischer Schaltkreis mit reduzierten Schalttransienten |
| US6094087A (en) * | 1997-07-30 | 2000-07-25 | Lucent Technologies Inc. | Gate drive circuit for isolated gate devices and method of operation thereof |
| FI110972B (fi) | 1999-03-10 | 2003-04-30 | Abb Industry Oy | Stabiloitu hilaohjain |
| DE50015173D1 (de) * | 2000-07-13 | 2008-07-03 | Ct Concept Technologie Ag | Verfahren und vorrichtung zur zustandsabhängigen regelung des transienten verhaltens von leistungshalbleiterschaltern |
-
2004
- 2004-05-10 FI FI20045171A patent/FI116109B/fi not_active IP Right Cessation
-
2005
- 2005-05-02 US US11/118,781 patent/US7109780B2/en not_active Expired - Fee Related
- 2005-05-06 EP EP05103783A patent/EP1596496B1/de not_active Expired - Lifetime
- 2005-05-06 AT AT05103783T patent/ATE522027T1/de not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| US7109780B2 (en) | 2006-09-19 |
| EP1596496B1 (de) | 2011-08-24 |
| US20050248384A1 (en) | 2005-11-10 |
| EP1596496A1 (de) | 2005-11-16 |
| FI116109B (fi) | 2005-09-15 |
| FI20045171A0 (fi) | 2004-05-10 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| RER | Ceased as to paragraph 5 lit. 3 law introducing patent treaties |