ATE523466T1 - Mos-transistor mit frei hängendem gate und nichtflüchtiger funktionsweise mit piezoelektrische aktivierung und herstellungsverfahren desselben - Google Patents

Mos-transistor mit frei hängendem gate und nichtflüchtiger funktionsweise mit piezoelektrische aktivierung und herstellungsverfahren desselben

Info

Publication number
ATE523466T1
ATE523466T1 AT08159904T AT08159904T ATE523466T1 AT E523466 T1 ATE523466 T1 AT E523466T1 AT 08159904 T AT08159904 T AT 08159904T AT 08159904 T AT08159904 T AT 08159904T AT E523466 T1 ATE523466 T1 AT E523466T1
Authority
AT
Austria
Prior art keywords
gate
zone
dielectric
piezoelectric
free
Prior art date
Application number
AT08159904T
Other languages
English (en)
Inventor
Michael Collonge
Olivier Thomas
Maud Vinet
Original Assignee
Commissariat Energie Atomique
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat Energie Atomique filed Critical Commissariat Energie Atomique
Application granted granted Critical
Publication of ATE523466T1 publication Critical patent/ATE523466T1/de

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C23/00—Digital stores characterised by movement of mechanical parts to effect storage, e.g. using balls; Storage elements therefor
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/687—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator having cavities, e.g. porous gate dielectrics having gasses therein
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/10—Resistive cells; Technology aspects
    • G11C2213/17—Memory cell being a nanowire transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
    • H10D30/6743—Silicon
    • H10D30/6744—Monocrystalline silicon

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Theoretical Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Micromachines (AREA)
  • Electrically Driven Valve-Operating Means (AREA)
  • Fuel-Injection Apparatus (AREA)
  • Electrical Control Of Air Or Fuel Supplied To Internal-Combustion Engine (AREA)
  • Non-Volatile Memory (AREA)
AT08159904T 2007-07-09 2008-07-08 Mos-transistor mit frei hängendem gate und nichtflüchtiger funktionsweise mit piezoelektrische aktivierung und herstellungsverfahren desselben ATE523466T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0756347A FR2918796B1 (fr) 2007-07-09 2007-07-09 Transistor mos a grille suspendue et a fonctionnement non-volatile.

Publications (1)

Publication Number Publication Date
ATE523466T1 true ATE523466T1 (de) 2011-09-15

Family

ID=39102970

Family Applications (1)

Application Number Title Priority Date Filing Date
AT08159904T ATE523466T1 (de) 2007-07-09 2008-07-08 Mos-transistor mit frei hängendem gate und nichtflüchtiger funktionsweise mit piezoelektrische aktivierung und herstellungsverfahren desselben

Country Status (4)

Country Link
US (1) US7812410B2 (de)
EP (1) EP2014611B1 (de)
AT (1) ATE523466T1 (de)
FR (1) FR2918796B1 (de)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8945970B2 (en) * 2006-09-22 2015-02-03 Carnegie Mellon University Assembling and applying nano-electro-mechanical systems
FR2923646A1 (fr) * 2007-11-09 2009-05-15 Commissariat Energie Atomique Cellule memoire sram dotee de transistors a structure multi-canaux verticale
FR2965507B1 (fr) * 2010-09-30 2012-08-31 Commissariat Energie Atomique Réalisation d'un système déformable en vue du déplacement d'un objet enferme dans celui-ci
DE102011083644A1 (de) * 2011-09-28 2013-03-28 Robert Bosch Gmbh Mikromechanische Sensorvorrichtung mit beweglichem Gate und entsprechendes Herstellungsverfahren
US9768271B2 (en) * 2013-02-22 2017-09-19 Micron Technology, Inc. Methods, devices, and systems related to forming semiconductor power devices with a handle substrate
US9385306B2 (en) 2014-03-14 2016-07-05 The United States Of America As Represented By The Secretary Of The Army Ferroelectric mechanical memory and method
JP6696252B2 (ja) * 2016-03-24 2020-05-20 富士ゼロックス株式会社 通信プログラム、通信装置及び情報処理装置

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4435786A (en) 1981-11-23 1984-03-06 Fairchild Camera And Instrument Corporation Self-refreshing memory cell
JP3450896B2 (ja) 1994-04-01 2003-09-29 三菱電機株式会社 不揮発性メモリ装置
US6963103B2 (en) 2001-08-30 2005-11-08 Micron Technology, Inc. SRAM cells with repressed floating gate memory, low tunnel barrier interpoly insulators
US20050227428A1 (en) * 2002-03-20 2005-10-13 Mihai Ionescu A Process for manufacturing mems
JP4744849B2 (ja) * 2004-11-11 2011-08-10 株式会社東芝 半導体装置
US7193283B2 (en) * 2005-06-20 2007-03-20 Magnachip Semiconductor Ltd. Flash cell using a piezoelectric effect
RU2383945C2 (ru) * 2006-06-09 2010-03-10 Юрий Генрихович Кригер Методы неразрушаемого считывания информации с ферроэлектрических элементов памяти

Also Published As

Publication number Publication date
FR2918796B1 (fr) 2010-04-30
US7812410B2 (en) 2010-10-12
EP2014611A2 (de) 2009-01-14
FR2918796A1 (fr) 2009-01-16
EP2014611B1 (de) 2011-09-07
EP2014611A3 (de) 2009-05-06
US20090014769A1 (en) 2009-01-15

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Legal Events

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