ATE523898T1 - Organische lichtemittierende anzeigevorrichtung und verfahren zu deren herstellung - Google Patents
Organische lichtemittierende anzeigevorrichtung und verfahren zu deren herstellungInfo
- Publication number
- ATE523898T1 ATE523898T1 AT10150419T AT10150419T ATE523898T1 AT E523898 T1 ATE523898 T1 AT E523898T1 AT 10150419 T AT10150419 T AT 10150419T AT 10150419 T AT10150419 T AT 10150419T AT E523898 T1 ATE523898 T1 AT E523898T1
- Authority
- AT
- Austria
- Prior art keywords
- oxide semiconductor
- semiconductor layer
- light emitting
- organic light
- thin film
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
- H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
- H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
- H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
- H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
- H10D86/425—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer having different crystal properties in different TFTs or within an individual TFT
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
- H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/10—Transparent electrodes, e.g. using graphene
- H10K2102/101—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO]
Landscapes
- Physics & Mathematics (AREA)
- Geometry (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electroluminescent Light Sources (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Thin Film Transistor (AREA)
- Shift Register Type Memory (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020090002242A KR101034686B1 (ko) | 2009-01-12 | 2009-01-12 | 유기전계발광 표시 장치 및 그의 제조 방법 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ATE523898T1 true ATE523898T1 (de) | 2011-09-15 |
Family
ID=42124279
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AT10150419T ATE523898T1 (de) | 2009-01-12 | 2010-01-11 | Organische lichtemittierende anzeigevorrichtung und verfahren zu deren herstellung |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US8436342B2 (de) |
| EP (1) | EP2207206B1 (de) |
| JP (1) | JP5274327B2 (de) |
| KR (1) | KR101034686B1 (de) |
| CN (1) | CN101794809B (de) |
| AT (1) | ATE523898T1 (de) |
| TW (1) | TWI423436B (de) |
Families Citing this family (84)
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| JP5504008B2 (ja) | 2009-03-06 | 2014-05-28 | 株式会社半導体エネルギー研究所 | 半導体装置 |
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| WO2011034012A1 (en) * | 2009-09-16 | 2011-03-24 | Semiconductor Energy Laboratory Co., Ltd. | Logic circuit, light emitting device, semiconductor device, and electronic device |
| WO2011065210A1 (en) | 2009-11-28 | 2011-06-03 | Semiconductor Energy Laboratory Co., Ltd. | Stacked oxide material, semiconductor device, and method for manufacturing the semiconductor device |
| CN105206514B (zh) | 2009-11-28 | 2018-04-10 | 株式会社半导体能源研究所 | 层叠的氧化物材料、半导体器件、以及用于制造该半导体器件的方法 |
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| WO2011074407A1 (en) * | 2009-12-18 | 2011-06-23 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
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| KR100506740B1 (ko) | 2003-12-23 | 2005-08-08 | 삼성전기주식회사 | 질화물 반도체 발광소자 및 그 제조방법 |
| KR100623690B1 (ko) | 2004-06-30 | 2006-09-19 | 삼성에스디아이 주식회사 | 평판 표시 장치 및 그의 제조 방법 |
| KR100998527B1 (ko) | 2004-11-10 | 2010-12-07 | 고쿠리츠다이가쿠호진 토쿄고교 다이가꾸 | 비정질 산화물 및 전계 효과 트랜지스터 |
| JP5138163B2 (ja) | 2004-11-10 | 2013-02-06 | キヤノン株式会社 | 電界効果型トランジスタ |
| KR100685831B1 (ko) | 2005-04-29 | 2007-02-22 | 삼성에스디아이 주식회사 | 유기전계발광소자 및 그의 제조 방법 |
| US7982215B2 (en) * | 2005-10-05 | 2011-07-19 | Idemitsu Kosan Co., Ltd. | TFT substrate and method for manufacturing TFT substrate |
| US7692610B2 (en) | 2005-11-30 | 2010-04-06 | Semiconductor Energy Laboratory Co., Ltd. | Display device |
| TW200801513A (en) | 2006-06-29 | 2008-01-01 | Fermiscan Australia Pty Ltd | Improved process |
| KR100712176B1 (ko) | 2006-12-14 | 2007-04-27 | 삼성에스디아이 주식회사 | 유기 전계 발광 소자 및 그 제조 방법 |
| JP5121254B2 (ja) * | 2007-02-28 | 2013-01-16 | キヤノン株式会社 | 薄膜トランジスタおよび表示装置 |
| JP2009031742A (ja) | 2007-04-10 | 2009-02-12 | Fujifilm Corp | 有機電界発光表示装置 |
| US9176353B2 (en) | 2007-06-29 | 2015-11-03 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device |
| TWI540647B (zh) | 2008-12-26 | 2016-07-01 | 半導體能源研究所股份有限公司 | 半導體裝置及其製造方法 |
-
2009
- 2009-01-12 KR KR1020090002242A patent/KR101034686B1/ko not_active Expired - Fee Related
- 2009-03-23 JP JP2009070440A patent/JP5274327B2/ja not_active Expired - Fee Related
-
2010
- 2010-01-08 US US12/654,938 patent/US8436342B2/en active Active
- 2010-01-11 EP EP10150419A patent/EP2207206B1/de active Active
- 2010-01-11 CN CN201010002358XA patent/CN101794809B/zh active Active
- 2010-01-11 AT AT10150419T patent/ATE523898T1/de not_active IP Right Cessation
- 2010-01-12 TW TW099100651A patent/TWI423436B/zh active
Also Published As
| Publication number | Publication date |
|---|---|
| US20100176383A1 (en) | 2010-07-15 |
| JP5274327B2 (ja) | 2013-08-28 |
| TWI423436B (zh) | 2014-01-11 |
| CN101794809B (zh) | 2012-11-28 |
| US8436342B2 (en) | 2013-05-07 |
| KR20100082940A (ko) | 2010-07-21 |
| EP2207206B1 (de) | 2011-09-07 |
| EP2207206A1 (de) | 2010-07-14 |
| CN101794809A (zh) | 2010-08-04 |
| JP2010161327A (ja) | 2010-07-22 |
| TW201030967A (en) | 2010-08-16 |
| KR101034686B1 (ko) | 2011-05-16 |
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