ATE524822T1 - Belichtungsverfahren für strahlen aus geladenen teilchen - Google Patents

Belichtungsverfahren für strahlen aus geladenen teilchen

Info

Publication number
ATE524822T1
ATE524822T1 AT07075242T AT07075242T ATE524822T1 AT E524822 T1 ATE524822 T1 AT E524822T1 AT 07075242 T AT07075242 T AT 07075242T AT 07075242 T AT07075242 T AT 07075242T AT E524822 T1 ATE524822 T1 AT E524822T1
Authority
AT
Austria
Prior art keywords
charged particle
aperture
beamlet
deflector
lens
Prior art date
Application number
AT07075242T
Other languages
English (en)
Inventor
Marco Jan-Jaco Wieland
Pieter Kruit
Original Assignee
Mapper Lithography Ip Bv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mapper Lithography Ip Bv filed Critical Mapper Lithography Ip Bv
Application granted granted Critical
Publication of ATE524822T1 publication Critical patent/ATE524822T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/3002—Details
    • H01J37/3007—Electron or ion-optical systems
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/045—Beam blanking or chopping, i.e. arrangements for momentarily interrupting exposure to the discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H01J37/3177—Multi-beam, e.g. fly's eye, comb probe
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/04—Means for controlling the discharge
    • H01J2237/043—Beam blanking
    • H01J2237/0435—Multi-aperture
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/04—Means for controlling the discharge
    • H01J2237/045—Diaphragms
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/04—Means for controlling the discharge
    • H01J2237/045—Diaphragms
    • H01J2237/0451—Diaphragms with fixed aperture
    • H01J2237/0453—Diaphragms with fixed aperture multiple apertures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/04—Means for controlling the discharge
    • H01J2237/049—Focusing means
    • H01J2237/0492—Lens systems
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/15—Means for deflecting or directing discharge
    • H01J2237/1501—Beam alignment means or procedures

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Analytical Chemistry (AREA)
  • Nanotechnology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Theoretical Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Electron Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
AT07075242T 2003-05-28 2004-05-27 Belichtungsverfahren für strahlen aus geladenen teilchen ATE524822T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US47381003P 2003-05-28 2003-05-28

Publications (1)

Publication Number Publication Date
ATE524822T1 true ATE524822T1 (de) 2011-09-15

Family

ID=33490650

Family Applications (2)

Application Number Title Priority Date Filing Date
AT04748613T ATE358885T1 (de) 2003-05-28 2004-05-27 Beamlet-belichtungssystem mit geladenen teilchen
AT07075242T ATE524822T1 (de) 2003-05-28 2004-05-27 Belichtungsverfahren für strahlen aus geladenen teilchen

Family Applications Before (1)

Application Number Title Priority Date Filing Date
AT04748613T ATE358885T1 (de) 2003-05-28 2004-05-27 Beamlet-belichtungssystem mit geladenen teilchen

Country Status (8)

Country Link
US (1) US7084414B2 (de)
EP (2) EP1830384B1 (de)
JP (1) JP4949843B2 (de)
KR (2) KR101168200B1 (de)
CN (1) CN100543920C (de)
AT (2) ATE358885T1 (de)
DE (1) DE602004005704T2 (de)
WO (1) WO2004107050A2 (de)

Families Citing this family (62)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090008579A1 (en) * 2003-10-07 2009-01-08 Tokyo Electron Limited Electron beam lithography apparatus and design method of patterned beam-defining aperture
US7928404B2 (en) * 2003-10-07 2011-04-19 Multibeam Corporation Variable-ratio double-deflection beam blanker
US7462848B2 (en) * 2003-10-07 2008-12-09 Multibeam Systems, Inc. Optics for generation of high current density patterned charged particle beams
KR101099487B1 (ko) * 2004-05-17 2011-12-28 마퍼 리쏘그라피 아이피 비.브이. 대전 입자 빔 노광 시스템
US7425713B2 (en) * 2005-01-14 2008-09-16 Arradiance, Inc. Synchronous raster scanning lithographic system
NL1029132C2 (nl) * 2005-05-26 2006-11-28 Univ Delft Tech Inrichting voor het opwekken van evenwijdige stralenbundeldelen.
US8597089B2 (en) * 2005-07-08 2013-12-03 Praxair Technology, Inc. System and method for treating live cargo such as poultry with gas
JP5222142B2 (ja) * 2005-09-06 2013-06-26 カール・ツァイス・エスエムティー・ゲーエムベーハー 粒子光学部品
CN101443877A (zh) * 2006-03-27 2009-05-27 多束系统公司 用于生成高电流密度构图带电粒子束的光学器件
WO2007112465A1 (en) * 2006-04-03 2007-10-11 Ims Nanofabrication Ag Particle-beam exposure apparatus with overall-modulation of a patterned beam
US8134135B2 (en) 2006-07-25 2012-03-13 Mapper Lithography Ip B.V. Multiple beam charged particle optical system
US7569834B1 (en) 2006-10-18 2009-08-04 Kla-Tencor Technologies Corporation High resolution charged particle projection lens array using magnetic elements
EP2019415B1 (de) * 2007-07-24 2016-05-11 IMS Nanofabrication AG Mehrfachstrahlquelle
US8445869B2 (en) 2008-04-15 2013-05-21 Mapper Lithography Ip B.V. Projection lens arrangement
US8890094B2 (en) 2008-02-26 2014-11-18 Mapper Lithography Ip B.V. Projection lens arrangement
CN102067271B (zh) * 2008-04-15 2014-05-21 迈普尔平版印刷Ip有限公司 子束阻断器装置
US7851774B2 (en) * 2008-04-25 2010-12-14 Taiwan Semiconductor Manufacturing Company, Ltd. System and method for direct writing to a wafer
US8502176B2 (en) * 2008-05-23 2013-08-06 Mapper Lithography Ip B.V. Imaging system
EP2128885A1 (de) * 2008-05-26 2009-12-02 FEI Company Quelle für geladene Teilchen mit integriertem Energiefilter
CN102422380A (zh) * 2009-02-22 2012-04-18 迈普尔平版印刷Ip有限公司 带电粒子微影设备及真空腔室中产生真空的方法
WO2010094804A1 (en) 2009-02-22 2010-08-26 Mapper Lithography Ip B.V. Lithography machine and substrate handling arrangement
JP5762981B2 (ja) 2009-02-22 2015-08-12 マッパー・リソグラフィー・アイピー・ビー．ブイ． 荷電粒子リソグラフィ装置と、真空チャンバー内の真空を生成する方法
US8366423B2 (en) 2009-02-22 2013-02-05 Mapper Lithography Ip B.V. Method and arrangement for realizing a vacuum in a vacuum chamber
WO2010134017A1 (en) * 2009-05-20 2010-11-25 Mapper Lithography Ip B.V. Method of generating a two-level pattern for lithographic processing and pattern generator using the same
EP3144955A1 (de) 2009-05-20 2017-03-22 Mapper Lithography IP B.V. Verfahren zum belichten eines wafers
CN102460633B (zh) 2009-05-20 2014-12-17 迈普尔平版印刷Ip有限公司 用于光刻系统的图案数据转换器
US8987677B2 (en) 2009-10-26 2015-03-24 Mapper Lithography Ip B.V. Charged particle multi-beamlet lithography system, modulation device, and method of manufacturing thereof
US8952342B2 (en) 2009-12-17 2015-02-10 Mapper Lithography Ip B.V. Support and positioning structure, semiconductor equipment system and method for positioning
TWI534852B (zh) * 2010-10-26 2016-05-21 瑪波微影Ｉｐ公司 微影系統、調整裝置及製造光纖固定基板之方法
US9305747B2 (en) 2010-11-13 2016-04-05 Mapper Lithography Ip B.V. Data path for lithography apparatus
TWI562183B (en) 2010-11-13 2016-12-11 Mapper Lithography Ip Bv Aperture array element, charged particle beam generator and charged particle lithography system
US8884255B2 (en) 2010-11-13 2014-11-11 Mapper Lithography Ip B.V. Data path for lithography apparatus
TWI517196B (zh) 2010-11-13 2016-01-11 瑪波微影Ｉｐ公司 具有中間腔室的帶電粒子微影系統
TWI562186B (en) 2010-11-13 2016-12-11 Mapper Lithography Ip Bv Charged particle lithography system and method for transferring a pattern onto a surface of a target and modulation device for use in a charged particle lithography system
RU2579533C2 (ru) 2010-12-14 2016-04-10 МЭППЕР ЛИТОГРАФИ АйПи Б. В. Литографическая система и способ обработки подложек в такой литографической системе
JP5902201B2 (ja) 2011-02-16 2016-04-13 マッパー・リソグラフィー・アイピー・ビー．ブイ． 磁気シールド用システム
KR102072200B1 (ko) 2011-04-22 2020-01-31 에이에스엠엘 네델란즈 비.브이. 리소그래피 머신들의 클러스터를 위한 네트워크 아키텍처 및 프로토콜
US8936994B2 (en) 2011-04-28 2015-01-20 Mapper Lithography Ip B.V. Method of processing a substrate in a lithography system
WO2013037856A1 (en) 2011-09-12 2013-03-21 Mapper Lithography Ip B.V. Substrate processing apparatus
CN103959919A (zh) 2011-09-28 2014-07-30 迈普尔平版印刷Ip有限公司 等离子产生器
USRE49732E1 (en) * 2012-03-08 2023-11-21 Asml Netherlands B.V. Charged particle lithography system with alignment sensor and beam measurement sensor
JP6239583B2 (ja) 2012-03-20 2017-11-29 マッパー・リソグラフィー・アイピー・ビー．ブイ． ラジカルを輸送するための装置および方法
WO2013171229A1 (en) 2012-05-14 2013-11-21 Mapper Lithography Ip B.V. Charged particle lithography system and beam generator
NL2010799C2 (en) 2012-05-14 2014-02-03 Mapper Lithography Ip Bv Charged particle multi-beamlet lithography system and cooling arrangement manufacturing method.
US11348756B2 (en) 2012-05-14 2022-05-31 Asml Netherlands B.V. Aberration correction in charged particle system
US10586625B2 (en) 2012-05-14 2020-03-10 Asml Netherlands B.V. Vacuum chamber arrangement for charged particle beam generator
NL2010759C2 (en) 2012-05-14 2015-08-25 Mapper Lithography Ip Bv Modulation device and power supply arrangement.
NL2010760C2 (en) 2013-05-03 2014-11-04 Mapper Lithography Ip Bv Beam grid layout.
EP2816585A1 (de) * 2013-06-17 2014-12-24 ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH Ladungsträgerstrahlsystem und Verfahren zum Betrieb davon
WO2015024956A1 (en) 2013-08-23 2015-02-26 Mapper Lithography Ip B.V. Drying device for use in a lithography system
RU2644388C2 (ru) 2013-11-14 2018-02-12 МЭППЕР ЛИТОГРАФИ АйПи Б.В. Многоэлектродная охлаждаемая конструкция
NL2014030B1 (en) 2013-12-30 2016-01-08 Mapper Lithography Ip Bv Cathode arrangement, electron gun, and lithograpy system comprising such electron gun.
KR20170084240A (ko) 2014-11-14 2017-07-19 마퍼 리쏘그라피 아이피 비.브이. 리소그래피 시스템에서 기판을 이송하기 위한 로드 로크 시스템 및 방법
US9484188B2 (en) 2015-03-11 2016-11-01 Mapper Lithography Ip B.V. Individual beam pattern placement verification in multiple beam lithography
US10096450B2 (en) 2015-12-28 2018-10-09 Mapper Lithography Ip B.V. Control system and method for lithography apparatus
US9981293B2 (en) 2016-04-21 2018-05-29 Mapper Lithography Ip B.V. Method and system for the removal and/or avoidance of contamination in charged particle beam systems
KR102401179B1 (ko) * 2017-12-12 2022-05-24 삼성전자주식회사 전자빔 장치의 어퍼처 시스템, 전자빔 노광 장치 및 전자빔 노광 장치 시스템
CN111971774B (zh) * 2018-03-29 2023-09-29 株式会社日立高新技术 带电粒子束装置
EP3834222A1 (de) * 2018-08-09 2021-06-16 ASML Netherlands B.V. Vorrichtung für mehrere ladungsteilchenstrahlen
NL2022156B1 (en) 2018-12-10 2020-07-02 Asml Netherlands Bv Plasma source control circuit
WO2020141041A1 (en) * 2018-12-31 2020-07-09 Asml Netherlands B.V. Systems and methods for real time stereo imaging using multiple electron beams
US11651934B2 (en) 2021-09-30 2023-05-16 Kla Corporation Systems and methods of creating multiple electron beams

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4243866A (en) * 1979-01-11 1981-01-06 International Business Machines Corporation Method and apparatus for forming a variable size electron beam
DE3172441D1 (en) * 1980-10-15 1985-10-31 Toshiba Kk Electron beam exposure system
US4544847A (en) * 1983-07-28 1985-10-01 Varian Associates, Inc. Multi-gap magnetic imaging lens for charged particle beams
JPS6142132A (ja) * 1984-08-06 1986-02-28 Nippon Telegr & Teleph Corp <Ntt> 荷電ビ−ム露光装置
JPH097538A (ja) * 1995-06-26 1997-01-10 Nippon Telegr & Teleph Corp <Ntt> 荷電ビーム描画装置
JP3908294B2 (ja) * 1996-02-02 2007-04-25 富士通株式会社 電子ビームの電流量を削減する電子ビーム露光装置及び電子ビーム露光方法
US5912469A (en) * 1996-07-11 1999-06-15 Nikon Corporation Charged-particle-beam microlithography apparatus
JP3085454B2 (ja) * 1997-03-13 2000-09-11 日本電気株式会社 荷電粒子線露光方法
KR19990062942A (ko) 1997-12-10 1999-07-26 히로시 오우라 전하 입자 빔 노출 장치
US6014200A (en) * 1998-02-24 2000-01-11 Nikon Corporation High throughput electron beam lithography system
JP4578606B2 (ja) * 2000-02-09 2010-11-10 富士通セミコンダクター株式会社 荷電粒子ビーム描画装置及び荷電粒子ビームサイズの調整方法
US6651513B2 (en) 2000-04-27 2003-11-25 Endress + Hauser Flowtec Ag Vibration meter and method of measuring a viscosity of a fluid
JP4112791B2 (ja) * 2000-10-03 2008-07-02 株式会社アドバンテスト 電子ビーム補正方法及び電子ビーム露光装置
JP4601146B2 (ja) * 2000-10-03 2010-12-22 株式会社アドバンテスト 電子ビーム露光装置
JP2002217089A (ja) * 2001-01-18 2002-08-02 Advantest Corp 電子ビーム偏向装置、電子ビーム偏向装置の製造方法、及び電子ビーム露光装置
JP4647820B2 (ja) 2001-04-23 2011-03-09 キヤノン株式会社 荷電粒子線描画装置、および、デバイスの製造方法

Also Published As

Publication number Publication date
KR101168200B1 (ko) 2012-07-25
DE602004005704D1 (de) 2007-05-16
US20050161621A1 (en) 2005-07-28
KR20060036391A (ko) 2006-04-28
EP1627412A2 (de) 2006-02-22
EP1830384A2 (de) 2007-09-05
EP1830384B1 (de) 2011-09-14
EP1627412B1 (de) 2007-04-04
JP2007500948A (ja) 2007-01-18
CN100543920C (zh) 2009-09-23
JP4949843B2 (ja) 2012-06-13
ATE358885T1 (de) 2007-04-15
DE602004005704T2 (de) 2007-12-27
KR101175523B1 (ko) 2012-08-21
WO2004107050A2 (en) 2004-12-09
WO2004107050A3 (en) 2005-04-21
CN1795529A (zh) 2006-06-28
EP1830384A3 (de) 2007-09-19
KR20120025629A (ko) 2012-03-15
US7084414B2 (en) 2006-08-01

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