ATE524822T1 - Belichtungsverfahren für strahlen aus geladenen teilchen - Google Patents

Belichtungsverfahren für strahlen aus geladenen teilchen

Info

Publication number
ATE524822T1
ATE524822T1 AT07075242T AT07075242T ATE524822T1 AT E524822 T1 ATE524822 T1 AT E524822T1 AT 07075242 T AT07075242 T AT 07075242T AT 07075242 T AT07075242 T AT 07075242T AT E524822 T1 ATE524822 T1 AT E524822T1
Authority
AT
Austria
Prior art keywords
charged particle
aperture
beamlet
deflector
lens
Prior art date
Application number
AT07075242T
Other languages
English (en)
Inventor
Marco Jan-Jaco Wieland
Pieter Kruit
Original Assignee
Mapper Lithography Ip Bv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mapper Lithography Ip Bv filed Critical Mapper Lithography Ip Bv
Application granted granted Critical
Publication of ATE524822T1 publication Critical patent/ATE524822T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/3002—Details
    • H01J37/3007—Electron or ion-optical systems
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/045—Beam blanking or chopping, i.e. arrangements for momentarily interrupting exposure to the discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H01J37/3177—Multi-beam, e.g. fly's eye, comb probe
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/04—Means for controlling the discharge
    • H01J2237/043—Beam blanking
    • H01J2237/0435—Multi-aperture
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/04—Means for controlling the discharge
    • H01J2237/045—Diaphragms
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/04—Means for controlling the discharge
    • H01J2237/045—Diaphragms
    • H01J2237/0451—Diaphragms with fixed aperture
    • H01J2237/0453—Diaphragms with fixed aperture multiple apertures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/04—Means for controlling the discharge
    • H01J2237/049—Focusing means
    • H01J2237/0492—Lens systems
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/15—Means for deflecting or directing discharge
    • H01J2237/1501—Beam alignment means or procedures

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Analytical Chemistry (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Electron Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
AT07075242T 2003-05-28 2004-05-27 Belichtungsverfahren für strahlen aus geladenen teilchen ATE524822T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US47381003P 2003-05-28 2003-05-28

Publications (1)

Publication Number Publication Date
ATE524822T1 true ATE524822T1 (de) 2011-09-15

Family

ID=33490650

Family Applications (2)

Application Number Title Priority Date Filing Date
AT04748613T ATE358885T1 (de) 2003-05-28 2004-05-27 Beamlet-belichtungssystem mit geladenen teilchen
AT07075242T ATE524822T1 (de) 2003-05-28 2004-05-27 Belichtungsverfahren für strahlen aus geladenen teilchen

Family Applications Before (1)

Application Number Title Priority Date Filing Date
AT04748613T ATE358885T1 (de) 2003-05-28 2004-05-27 Beamlet-belichtungssystem mit geladenen teilchen

Country Status (8)

Country Link
US (1) US7084414B2 (de)
EP (2) EP1627412B1 (de)
JP (1) JP4949843B2 (de)
KR (2) KR101175523B1 (de)
CN (1) CN100543920C (de)
AT (2) ATE358885T1 (de)
DE (1) DE602004005704T2 (de)
WO (1) WO2004107050A2 (de)

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EP2005460A4 (de) * 2006-03-27 2010-11-24 Multibeam Systems Inc Optik zur erzeugung von strukturierten strahlen geladener teilchen mit hoher stromdichte
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EP2019415B1 (de) 2007-07-24 2016-05-11 IMS Nanofabrication AG Mehrfachstrahlquelle
US8445869B2 (en) 2008-04-15 2013-05-21 Mapper Lithography Ip B.V. Projection lens arrangement
US8890094B2 (en) 2008-02-26 2014-11-18 Mapper Lithography Ip B.V. Projection lens arrangement
JP5268170B2 (ja) * 2008-04-15 2013-08-21 マッパー・リソグラフィー・アイピー・ビー．ブイ． 投影レンズ構成体
US7851774B2 (en) * 2008-04-25 2010-12-14 Taiwan Semiconductor Manufacturing Company, Ltd. System and method for direct writing to a wafer
JP5587299B2 (ja) * 2008-05-23 2014-09-10 マッパー・リソグラフィー・アイピー・ビー．ブイ． 結像システム
EP2128885A1 (de) * 2008-05-26 2009-12-02 FEI Company Quelle für geladene Teilchen mit integriertem Energiefilter
US20110049393A1 (en) 2009-02-22 2011-03-03 Mapper Lithography Ip B.V. Lithography Machine and Substrate Handling Arrangement
JP5762981B2 (ja) 2009-02-22 2015-08-12 マッパー・リソグラフィー・アイピー・ビー．ブイ． 荷電粒子リソグラフィ装置と、真空チャンバー内の真空を生成する方法
WO2010094801A1 (en) 2009-02-22 2010-08-26 Mapper Lithography Ip B.V. A method and arrangement for realizing a vacuum in a vacuum chamber
CN102422380A (zh) * 2009-02-22 2012-04-18 迈普尔平版印刷Ip有限公司 带电粒子微影设备及真空腔室中产生真空的方法
CN104795303B (zh) 2009-05-20 2017-12-05 迈普尔平版印刷Ip有限公司 用于处理图案数据的方法
KR101605832B1 (ko) * 2009-05-20 2016-03-23 마퍼 리쏘그라피 아이피 비.브이. 리소그래픽 처리를 위한 2―레벨 패턴 발생 방법 및 이를 이용한 패턴 발생기
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JP5844269B2 (ja) 2009-10-26 2016-01-13 マッパー・リソグラフィー・アイピー・ビー．ブイ． 調整装置を有する荷電粒子複数ビームレット・リソグラフィ・システム
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TWI517196B (zh) 2010-11-13 2016-01-11 瑪波微影Ｉｐ公司 具有中間腔室的帶電粒子微影系統
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CN103370655B (zh) 2010-12-14 2016-03-16 迈普尔平版印刷Ip有限公司 光刻系统和在该光刻系统中处理基板的方法
RU2558646C2 (ru) 2011-02-16 2015-08-10 МЭППЕР ЛИТОГРАФИ АйПи Б.В. Система для магнитного экранирования
US9244726B2 (en) 2011-04-22 2016-01-26 Mapper Lithography Ip B.V. Network architecture for lithography machine cluster
TWI514089B (zh) 2011-04-28 2015-12-21 瑪波微影Ｉｐ公司 在微影系統中用於轉移基板的設備
WO2013037856A1 (en) * 2011-09-12 2013-03-21 Mapper Lithography Ip B.V. Substrate processing apparatus
TW201330705A (zh) 2011-09-28 2013-07-16 Mapper Lithography Ip Bv 電漿產生器
CN104272427B (zh) * 2012-03-08 2017-05-17 迈普尔平版印刷Ip有限公司 具有对准传感器和射束测量传感器的带电粒子光刻系统
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US10586625B2 (en) 2012-05-14 2020-03-10 Asml Netherlands B.V. Vacuum chamber arrangement for charged particle beam generator
US11348756B2 (en) 2012-05-14 2022-05-31 Asml Netherlands B.V. Aberration correction in charged particle system
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EP2816585A1 (de) * 2013-06-17 2014-12-24 ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH Ladungsträgerstrahlsystem und Verfahren zum Betrieb davon
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EP3069369A1 (de) 2013-11-14 2016-09-21 Mapper Lithography IP B.V. Elektronenoptik mit mehreren elektroden
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EP3218926A2 (de) 2014-11-14 2017-09-20 Mapper Lithography IP B.V. Schleusensystem und -verfahren zum transfer von substraten in einem lithographiesystem
US9484188B2 (en) 2015-03-11 2016-11-01 Mapper Lithography Ip B.V. Individual beam pattern placement verification in multiple beam lithography
US10096450B2 (en) 2015-12-28 2018-10-09 Mapper Lithography Ip B.V. Control system and method for lithography apparatus
US9981293B2 (en) 2016-04-21 2018-05-29 Mapper Lithography Ip B.V. Method and system for the removal and/or avoidance of contamination in charged particle beam systems
KR102401179B1 (ko) * 2017-12-12 2022-05-24 삼성전자주식회사 전자빔 장치의 어퍼처 시스템, 전자빔 노광 장치 및 전자빔 노광 장치 시스템
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Also Published As

Publication number Publication date
CN1795529A (zh) 2006-06-28
US20050161621A1 (en) 2005-07-28
KR101168200B1 (ko) 2012-07-25
US7084414B2 (en) 2006-08-01
ATE358885T1 (de) 2007-04-15
EP1830384B1 (de) 2011-09-14
DE602004005704T2 (de) 2007-12-27
KR20120025629A (ko) 2012-03-15
EP1830384A2 (de) 2007-09-05
WO2004107050A3 (en) 2005-04-21
CN100543920C (zh) 2009-09-23
JP2007500948A (ja) 2007-01-18
JP4949843B2 (ja) 2012-06-13
EP1627412B1 (de) 2007-04-04
KR101175523B1 (ko) 2012-08-21
KR20060036391A (ko) 2006-04-28
EP1830384A3 (de) 2007-09-19
DE602004005704D1 (de) 2007-05-16
EP1627412A2 (de) 2006-02-22
WO2004107050A2 (en) 2004-12-09

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