ATE525727T1 - Lesen benachbarter zellen mit marge für leseoperationen eines nichtflüchtigen speichers mit kopplungskompensation - Google Patents

Lesen benachbarter zellen mit marge für leseoperationen eines nichtflüchtigen speichers mit kopplungskompensation

Info

Publication number
ATE525727T1
ATE525727T1 AT07869948T AT07869948T ATE525727T1 AT E525727 T1 ATE525727 T1 AT E525727T1 AT 07869948 T AT07869948 T AT 07869948T AT 07869948 T AT07869948 T AT 07869948T AT E525727 T1 ATE525727 T1 AT E525727T1
Authority
AT
Austria
Prior art keywords
adjacent
memory cell
reading
volatile memory
coupling
Prior art date
Application number
AT07869948T
Other languages
English (en)
Inventor
Nima Mokhlesi
Original Assignee
Sandisk Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US11/618,624 external-priority patent/US7606070B2/en
Priority claimed from US11/618,616 external-priority patent/US7518923B2/en
Application filed by Sandisk Corp filed Critical Sandisk Corp
Application granted granted Critical
Publication of ATE525727T1 publication Critical patent/ATE525727T1/de

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/26—Sensing or reading circuits; Data output circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
    • G11C11/5642—Sensing or reading circuits; Data output circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0483—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells having several storage transistors connected in series
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/30—Power supply circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3418—Disturbance prevention or evaluation; Refreshing of disturbed memory data
    • G11C16/3427—Circuits or methods to prevent or reduce disturbance of the state of a memory cell when neighbouring cells are read or written
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3418—Disturbance prevention or evaluation; Refreshing of disturbed memory data
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C2211/56—Indexing scheme relating to G11C11/56 and sub-groups for features not covered by these groups
    • G11C2211/564—Miscellaneous aspects
    • G11C2211/5646—Multilevel memory with flag bits, e.g. for showing that a "first page" of a word line is programmed but not a "second page"
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Read Only Memory (AREA)
AT07869948T 2006-12-29 2007-12-27 Lesen benachbarter zellen mit marge für leseoperationen eines nichtflüchtigen speichers mit kopplungskompensation ATE525727T1 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/618,624 US7606070B2 (en) 2006-12-29 2006-12-29 Systems for margined neighbor reading for non-volatile memory read operations including coupling compensation
US11/618,616 US7518923B2 (en) 2006-12-29 2006-12-29 Margined neighbor reading for non-volatile memory read operations including coupling compensation
PCT/US2007/088899 WO2008083196A2 (en) 2006-12-29 2007-12-27 Margined neighbor reading for non-volatile memory read operations including coupling compensation

Publications (1)

Publication Number Publication Date
ATE525727T1 true ATE525727T1 (de) 2011-10-15

Family

ID=39472436

Family Applications (1)

Application Number Title Priority Date Filing Date
AT07869948T ATE525727T1 (de) 2006-12-29 2007-12-27 Lesen benachbarter zellen mit marge für leseoperationen eines nichtflüchtigen speichers mit kopplungskompensation

Country Status (7)

Country Link
EP (1) EP2100307B1 (de)
JP (1) JP5159790B2 (de)
KR (1) KR101094422B1 (de)
CN (1) CN101627442B (de)
AT (1) ATE525727T1 (de)
TW (1) TWI380311B (de)
WO (1) WO2008083196A2 (de)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101291667B1 (ko) * 2007-08-20 2013-08-01 삼성전자주식회사 불휘발성 메모리 장치 및 그 독출 방법
KR101484556B1 (ko) 2008-10-28 2015-01-20 삼성전자주식회사 독출 보상 회로
JP2010134983A (ja) * 2008-12-03 2010-06-17 Toshiba Corp デプレッションタイプｎａｎｄフラッシュメモリ
US7813181B2 (en) * 2008-12-31 2010-10-12 Sandisk Corporation Non-volatile memory and method for sensing with pipelined corrections for neighboring perturbations
CN103119656A (zh) 2010-09-24 2013-05-22 株式会社东芝 非易失性半导体存储器件
US8782495B2 (en) * 2010-12-23 2014-07-15 Sandisk Il Ltd Non-volatile memory and methods with asymmetric soft read points around hard read points
US8099652B1 (en) * 2010-12-23 2012-01-17 Sandisk Corporation Non-volatile memory and methods with reading soft bits in non uniform schemes
US8498152B2 (en) 2010-12-23 2013-07-30 Sandisk Il Ltd. Non-volatile memory and methods with soft-bit reads while reading hard bits with compensation for coupling
KR101798013B1 (ko) 2010-12-30 2017-11-16 삼성전자주식회사 비휘발성 메모리 장치의 프로그램 방법
KR101772951B1 (ko) 2011-03-10 2017-09-13 삼성전자주식회사 불 휘발성 메모리 장치 및 그것의 읽기 방법
KR101913291B1 (ko) 2011-09-09 2018-12-28 삼성전자주식회사 비휘발성 메모리 장치, 그 데이터 판독 방법 및 기록 매체
JP2013127828A (ja) 2011-12-16 2013-06-27 Samsung Electronics Co Ltd 半導体記憶装置
US9552251B2 (en) * 2014-04-22 2017-01-24 Sandisk Technologies Llc Neighboring word line program disturb countermeasure for charge-trapping memory
US9336891B2 (en) * 2014-07-02 2016-05-10 Sandisk Technologies Inc. Look ahead read method for non-volatile memory
US9355732B2 (en) * 2014-10-01 2016-05-31 Sandisk Technologies Inc. Latch initialization for a data storage device
KR102395722B1 (ko) * 2015-09-17 2022-05-10 에스케이하이닉스 주식회사 저장 장치 및 이의 동작 방법
US9548127B1 (en) 2015-12-28 2017-01-17 Kabushiki Kaisha Toshiba Memory system
US10008273B2 (en) * 2016-06-13 2018-06-26 Sandisk Technologies Llc Cell current based bit line voltage
KR102395563B1 (ko) * 2016-07-25 2022-05-06 에스케이하이닉스 주식회사 비휘발성 메모리 소자 및 이의 제조 방법
KR102489551B1 (ko) * 2018-03-23 2023-01-17 에스케이하이닉스 주식회사 메모리 컨트롤러 및 그 동작 방법
CN110648710A (zh) * 2018-06-26 2020-01-03 北京兆易创新科技股份有限公司 字线电压的施加方法、装置、电子设备和存储介质
WO2021102777A1 (en) * 2019-11-28 2021-06-03 Yangtze Memory Technologies Co., Ltd. Methods of enhancing speed of reading data from memory device
US11670379B2 (en) * 2020-12-04 2023-06-06 Micron Technology, Inc. Sense line structures in capacitive sense NAND memory
CN115458027B (zh) * 2021-06-08 2026-05-29 中国科学院微电子研究所 一种测试存储器地址保持时间的方法、装置、设备及介质
CN121153081A (zh) * 2024-04-16 2025-12-16 长江存储科技有限责任公司 存储器装置、存储器系统及其操作方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100276653B1 (ko) * 1998-08-27 2001-01-15 윤종용 스프릿 게이트형 불휘발성 메모리 셀의 구동방법 및 이 셀들을구비한 반도체 메모리 장치의 구동방법
JP3913704B2 (ja) 2003-04-22 2007-05-09 株式会社東芝 不揮発性半導体記憶装置及びこれを用いた電子装置
JP3884448B2 (ja) 2004-05-17 2007-02-21 株式会社東芝 半導体記憶装置
US7372730B2 (en) * 2004-01-26 2008-05-13 Sandisk Corporation Method of reading NAND memory to compensate for coupling between storage elements
US7187585B2 (en) * 2005-04-05 2007-03-06 Sandisk Corporation Read operation for non-volatile storage that includes compensation for coupling
CN101395673B (zh) * 2006-03-03 2011-09-21 桑迪士克股份有限公司 对浮动栅极耦合具有补偿的非易失性存储装置的读取操作

Also Published As

Publication number Publication date
JP2010515203A (ja) 2010-05-06
KR101094422B1 (ko) 2011-12-15
TWI380311B (en) 2012-12-21
CN101627442A (zh) 2010-01-13
CN101627442B (zh) 2013-07-24
EP2100307A2 (de) 2009-09-16
JP5159790B2 (ja) 2013-03-13
WO2008083196A2 (en) 2008-07-10
KR20090117713A (ko) 2009-11-12
WO2008083196A3 (en) 2008-08-28
TW200841346A (en) 2008-10-16
EP2100307B1 (de) 2011-09-21

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