ATE526433T1 - Haftschicht für dünnschichttransistor - Google Patents

Haftschicht für dünnschichttransistor

Info

Publication number: ATE526433T1
Authority: AT; Austria
Prior art keywords: thin film; poly; adhesive layer; film transistor; microcrystalline silicon
Prior art date: 2004-08-04

Application number

AT05762954T

Other languages

English (en)

Inventor

Quoc Hai Tran

Jerome Villette

Original Assignee

Oerlikon Solar Ag

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

2004-08-04

Filing date

2005-07-28

Publication date

2011-10-15

2005-07-28 Application filed by Oerlikon Solar Ag filed Critical Oerlikon Solar Ag

2011-10-15 Application granted granted Critical

2011-10-15 Publication of ATE526433T1 publication Critical patent/ATE526433T1/de

Links

239000010409 thin film Substances 0.000 title abstract 2
239000012790 adhesive layer Substances 0.000 title 1
229910021424 microcrystalline silicon Inorganic materials 0.000 abstract 3
229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 3
239000012212 insulator Substances 0.000 abstract 2
238000004519 manufacturing process Methods 0.000 abstract 2
238000000034 method Methods 0.000 abstract 2
230000001737 promoting effect Effects 0.000 abstract 2
XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
229910021417 amorphous silicon Inorganic materials 0.000 abstract 1
238000000623 plasma-assisted chemical vapour deposition Methods 0.000 abstract 1
239000004065 semiconductor Substances 0.000 abstract 1
229910052710 silicon Inorganic materials 0.000 abstract 1
239000010703 silicon Substances 0.000 abstract 1

Classifications

- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/24—Deposition of silicon only
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/02—Pretreatment of the material to be coated
- C23C16/0272—Deposition of sub-layers, e.g. to promote the adhesion of the main coating

Landscapes

Chemical & Material Sciences (AREA)
General Chemical & Material Sciences (AREA)
Chemical Kinetics & Catalysis (AREA)
Engineering & Computer Science (AREA)
Materials Engineering (AREA)
Mechanical Engineering (AREA)
Metallurgy (AREA)
Organic Chemistry (AREA)
Inorganic Chemistry (AREA)
Thin Film Transistor (AREA)

AT05762954T 2004-08-04 2005-07-28 Haftschicht für dünnschichttransistor ATE526433T1 (de)

Applications Claiming Priority (2)

Application Number	Priority Date	Filing Date	Title
US59859904P	2004-08-04	2004-08-04
PCT/CH2005/000450 WO2006012766A2 (en)	2004-08-04	2005-07-28	Adhesion layer for thin film transistors

Publications (1)

Publication Number	Publication Date
ATE526433T1 true ATE526433T1 (de)	2011-10-15

Family

ID=35517549

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
AT05762954T ATE526433T1 (de)	2004-08-04	2005-07-28	Haftschicht für dünnschichttransistor

Country Status (5)

Country	Link
US (1)	US8673410B2 (de)
EP (1)	EP1789604B1 (de)
AT (1)	ATE526433T1 (de)
TW (1)	TWI386512B (de)
WO (1)	WO2006012766A2 (de)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
TWI519668B (zh)	2014-07-17	2016-02-01	國立清華大學	具有結晶矽薄膜之基板及其製備方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS51117020A (en) *	1975-04-07	1976-10-14	Hitachi Ltd	Magnetic head and production method of it
JPH0388321A (ja) *	1989-08-31	1991-04-12	Tonen Corp	多結晶シリコン薄膜
US5444302A (en) *	1992-12-25	1995-08-22	Hitachi, Ltd.	Semiconductor device including multi-layer conductive thin film of polycrystalline material
JPH076960A (ja) *	1993-06-16	1995-01-10	Fuji Electric Co Ltd	多結晶半導体薄膜の生成方法
US5677236A (en) *	1995-02-24	1997-10-14	Mitsui Toatsu Chemicals, Inc.	Process for forming a thin microcrystalline silicon semiconductor film
JP3416723B2 (ja) *	1995-05-25	2003-06-16	独立行政法人産業技術総合研究所	非晶質シリコン薄膜トランジスタ及びその製法
US5869389A (en) *	1996-01-18	1999-02-09	Micron Technology, Inc.	Semiconductor processing method of providing a doped polysilicon layer
US6479166B1 (en) *	1998-10-06	2002-11-12	Case Western Reserve University	Large area polysilicon films with predetermined stress characteristics and method for producing same
US6232208B1 (en) *	1998-11-06	2001-05-15	Advanced Micro Devices, Inc.	Semiconductor device and method of manufacturing a semiconductor device having an improved gate electrode profile
KR101027485B1 (ko) *	2001-02-12	2011-04-06	에이에스엠 아메리카, 인코포레이티드	반도체 박막 증착을 위한 개선된 공정
KR100806906B1 (ko) *	2001-09-25	2008-02-22	삼성전자주식회사	액정 표시 장치와 이의 구동 장치 및 구동 방법
US6956233B2 (en) *	2002-08-26	2005-10-18	Sin-Etsu Chemical Co., Ltd.	Plated substrate for hard disk medium

2005
- 2005-07-28 AT AT05762954T patent/ATE526433T1/de not_active IP Right Cessation
- 2005-07-28 EP EP05762954A patent/EP1789604B1/de not_active Expired - Lifetime
- 2005-07-28 WO PCT/CH2005/000450 patent/WO2006012766A2/en not_active Ceased
- 2005-07-28 US US11/573,162 patent/US8673410B2/en not_active Expired - Fee Related
- 2005-08-03 TW TW094126299A patent/TWI386512B/zh not_active IP Right Cessation

Also Published As

Publication number	Publication date
WO2006012766A3 (en)	2006-04-20
TW200630502A (en)	2006-09-01
EP1789604A2 (de)	2007-05-30
EP1789604B1 (de)	2011-09-28
US8673410B2 (en)	2014-03-18
WO2006012766A2 (en)	2006-02-09
US20070254165A1 (en)	2007-11-01
TWI386512B (zh)	2013-02-21

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Legal Events

Date	Code	Title	Description
2012-03-15	RER	Ceased as to paragraph 5 lit. 3 law introducing patent treaties