ATE526685T1 - Mehrschichtiges halbleitersubstrat und darauf gebildeter bildsensor zur verbesserten infrarotempfindlichkeit - Google Patents
Mehrschichtiges halbleitersubstrat und darauf gebildeter bildsensor zur verbesserten infrarotempfindlichkeitInfo
- Publication number
- ATE526685T1 ATE526685T1 AT05257881T AT05257881T ATE526685T1 AT E526685 T1 ATE526685 T1 AT E526685T1 AT 05257881 T AT05257881 T AT 05257881T AT 05257881 T AT05257881 T AT 05257881T AT E526685 T1 ATE526685 T1 AT E526685T1
- Authority
- AT
- Austria
- Prior art keywords
- image sensor
- semiconductor substrate
- layer semiconductor
- infrared sensitivity
- improved infrared
- Prior art date
Links
- 239000000758 substrate Substances 0.000 title abstract 3
- 239000004065 semiconductor Substances 0.000 title 1
- 230000035945 sensitivity Effects 0.000 title 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 abstract 4
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 abstract 4
- 229910045601 alloy Inorganic materials 0.000 abstract 4
- 239000000956 alloy Substances 0.000 abstract 4
- 229910052732 germanium Inorganic materials 0.000 abstract 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 abstract 2
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/10—Semiconductor bodies
- H10F77/12—Active materials
- H10F77/122—Active materials comprising only Group IV materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
- H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
- H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
- H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
- H10F30/221—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PN homojunction
- H10F30/2218—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PN homojunction the devices comprising active layers made of only Group IV-VI materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
- H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
- H10F39/184—Infrared image sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/803—Pixels having integrated switching, control, storage or amplification elements
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
Landscapes
- Solid State Image Pick-Up Elements (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
- Light Receiving Elements (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US11/038,594 US20060157806A1 (en) | 2005-01-18 | 2005-01-18 | Multilayered semiconductor susbtrate and image sensor formed thereon for improved infrared response |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ATE526685T1 true ATE526685T1 (de) | 2011-10-15 |
Family
ID=36061375
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AT05257881T ATE526685T1 (de) | 2005-01-18 | 2005-12-20 | Mehrschichtiges halbleitersubstrat und darauf gebildeter bildsensor zur verbesserten infrarotempfindlichkeit |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US20060157806A1 (de) |
| EP (1) | EP1681722B1 (de) |
| CN (1) | CN1828917B (de) |
| AT (1) | ATE526685T1 (de) |
| TW (1) | TWI305414B (de) |
Families Citing this family (26)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100625944B1 (ko) | 2005-06-30 | 2006-09-18 | 매그나칩 반도체 유한회사 | 씨모스 이미지 센서의 포토다이오드 및 그의 제조 방법 |
| JP4984634B2 (ja) * | 2005-07-21 | 2012-07-25 | ソニー株式会社 | 物理情報取得方法および物理情報取得装置 |
| US7943471B1 (en) * | 2006-05-15 | 2011-05-17 | Globalfoundries Inc. | Diode with asymmetric silicon germanium anode |
| SG175565A1 (en) | 2006-09-29 | 2011-11-28 | Univ Florida | Method and apparatus for infrared detection and display |
| CN101459184B (zh) * | 2007-12-13 | 2011-03-23 | 中芯国际集成电路制造(上海)有限公司 | 在cmos上感测图像的系统和方法 |
| US7825465B2 (en) | 2007-12-13 | 2010-11-02 | Fairchild Semiconductor Corporation | Structure and method for forming field effect transistor with low resistance channel region |
| CN100595934C (zh) * | 2008-01-23 | 2010-03-24 | 厦门大学 | 基于虚衬底的硅锗异质结光晶体管 |
| US10636929B2 (en) * | 2009-04-30 | 2020-04-28 | Massachusetts Institute Of Technology | Cross-talk suppression in Geiger-mode avalanche photodiodes |
| US20110169991A1 (en) * | 2010-01-08 | 2011-07-14 | Omnivision Technologies, Inc. | Image sensor with epitaxially self-aligned photo sensors |
| SG185375A1 (en) | 2010-05-24 | 2012-12-28 | Univ Florida | Method and apparatus for providing a charge blocking layer on an infrared up-conversion device |
| BR112013033122A2 (pt) | 2011-06-30 | 2017-01-24 | Nanoholdings Llc | método e aparelho para detectar radiação infravermelha com ganho |
| JP2013157367A (ja) * | 2012-01-27 | 2013-08-15 | Sony Corp | 撮像素子、製造装置および方法、並びに、撮像装置 |
| EP2948984A4 (de) * | 2013-01-25 | 2016-08-24 | Univ Florida | Neuartiger ir-bildsensor mit einem lösungsverarbeiteten pbs-lichtdetektor |
| CN104078472B (zh) * | 2013-03-27 | 2017-02-01 | 中芯国际集成电路制造(上海)有限公司 | Cmos图像传感器及其制造方法 |
| US9153717B2 (en) | 2013-08-09 | 2015-10-06 | Taiwan Semiconductor Manufacturing Company, Ltd. | Backside illuminated photo-sensitive device with gradated buffer layer |
| JP6302216B2 (ja) * | 2013-11-08 | 2018-03-28 | ルネサスエレクトロニクス株式会社 | 半導体装置およびその製造方法 |
| US9806122B2 (en) | 2014-07-25 | 2017-10-31 | Omnivision Technologies, Inc. | Visible and infrared image sensor |
| US9799689B2 (en) | 2014-11-13 | 2017-10-24 | Artilux Inc. | Light absorption apparatus |
| US9748307B2 (en) | 2014-11-13 | 2017-08-29 | Artilux Inc. | Light absorption apparatus |
| JP2016126472A (ja) * | 2014-12-26 | 2016-07-11 | 株式会社東芝 | 心拍数検出装置及びそれを用いた顔認識システム |
| JP2018529214A (ja) | 2015-06-11 | 2018-10-04 | ユニバーシティー オブ フロリダ リサーチ ファウンデーション, インコーポレイテッドUniversity Of Florida Research Foundation, Inc. | 単分散ｉｒ吸収ナノ粒子及び関連する方法及びデバイス |
| US9859325B2 (en) * | 2015-11-13 | 2018-01-02 | Taiwan Semiconductor Manufacturing Co., Ltd. | Complementary metal-oxide-semiconductor (CMOS) image sensor with silicon and silicon germanium |
| FR3111019B1 (fr) * | 2020-05-26 | 2022-07-22 | St Microelectronics Crolles 2 Sas | Capteur optique intégré à photodiodes pincées |
| CN113725242B (zh) * | 2020-05-26 | 2025-04-25 | 意法半导体(克洛尔2)公司 | 具有钉扎光电二极管的集成光学传感器 |
| US20220252725A1 (en) * | 2021-02-05 | 2022-08-11 | Artilux, Inc. | Lidar Sensor with Dynamic Projection Patterns |
| JP7097137B1 (ja) * | 2022-03-16 | 2022-07-07 | 株式会社オプトハブ | 光検出装置 |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4758734A (en) * | 1984-03-13 | 1988-07-19 | Nec Corporation | High resolution image sensor array using amorphous photo-diodes |
| CA2062134C (en) | 1991-05-31 | 1997-03-25 | Ibm | Low Defect Densiry/Arbitrary Lattice Constant Heteroepitaxial Layers |
| US6403975B1 (en) * | 1996-04-09 | 2002-06-11 | Max-Planck Gesellschaft Zur Forderung Der Wissenschafteneev | Semiconductor components, in particular photodetectors, light emitting diodes, optical modulators and waveguides with multilayer structures grown on silicon substrates |
| KR19990023221A (ko) * | 1997-08-20 | 1999-03-25 | 포만 제프리 엘 | 감광성 소자, 능동 픽셀 센서 소자, 능동 픽셀 센서 감광성 소자 및 능동 픽셀 센서 장치 |
| CN100446264C (zh) * | 2000-10-19 | 2008-12-24 | 量子半导体有限公司 | 制作和cmos电路集成在一起的异质结光电二极管的方法 |
| WO2003015142A2 (en) * | 2001-08-06 | 2003-02-20 | Massachusetts Institute Of Technology | Formation of planar strained layers |
| US6980748B2 (en) * | 2001-08-30 | 2005-12-27 | International Business Machines Corporation | SiGe or germanium flip chip optical receiver |
| GB0216075D0 (en) * | 2002-07-11 | 2002-08-21 | Qinetiq Ltd | Photodetector circuits |
| US6919552B2 (en) * | 2002-11-25 | 2005-07-19 | Agilent Technologies, Inc. | Optical detector and method for detecting incident light |
| US6921934B2 (en) * | 2003-03-28 | 2005-07-26 | Micron Technology, Inc. | Double pinned photodiode for CMOS APS and method of formation |
| US7122392B2 (en) * | 2003-06-30 | 2006-10-17 | Intel Corporation | Methods of forming a high germanium concentration silicon germanium alloy by epitaxial lateral overgrowth and structures formed thereby |
| US7164182B2 (en) * | 2003-07-07 | 2007-01-16 | Micron Technology, Inc. | Pixel with strained silicon layer for improving carrier mobility and blue response in imagers |
-
2005
- 2005-01-18 US US11/038,594 patent/US20060157806A1/en not_active Abandoned
- 2005-12-20 AT AT05257881T patent/ATE526685T1/de not_active IP Right Cessation
- 2005-12-20 EP EP05257881A patent/EP1681722B1/de not_active Expired - Lifetime
- 2005-12-28 TW TW094143731A patent/TWI305414B/zh not_active IP Right Cessation
-
2006
- 2006-01-18 CN CN200610005998XA patent/CN1828917B/zh not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| EP1681722A3 (de) | 2007-05-30 |
| EP1681722B1 (de) | 2011-09-28 |
| TWI305414B (en) | 2009-01-11 |
| CN1828917A (zh) | 2006-09-06 |
| CN1828917B (zh) | 2012-11-21 |
| US20060157806A1 (en) | 2006-07-20 |
| TW200627635A (en) | 2006-08-01 |
| EP1681722A2 (de) | 2006-07-19 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| RER | Ceased as to paragraph 5 lit. 3 law introducing patent treaties |