ATE527678T1 - Verfahren zur maskenlosen teilchenstrahlbelichtung - Google Patents

Verfahren zur maskenlosen teilchenstrahlbelichtung

Info

Publication number
ATE527678T1
ATE527678T1 AT09450211T AT09450211T ATE527678T1 AT E527678 T1 ATE527678 T1 AT E527678T1 AT 09450211 T AT09450211 T AT 09450211T AT 09450211 T AT09450211 T AT 09450211T AT E527678 T1 ATE527678 T1 AT E527678T1
Authority
AT
Austria
Prior art keywords
target
beam image
scanning direction
location
exposure
Prior art date
Application number
AT09450211T
Other languages
English (en)
Inventor
Heinrich Fragner
Elmar Platzgummer
Robert Nowak
Adrian Buerli
Original Assignee
Ims Nanofabrication Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ims Nanofabrication Ag filed Critical Ims Nanofabrication Ag
Application granted granted Critical
Publication of ATE527678T1 publication Critical patent/ATE527678T1/de

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H01J37/3177—Multi-beam, e.g. fly's eye, comb probe
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/143—Electron beam

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Analytical Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Electron Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
AT09450211T 2008-11-17 2009-11-05 Verfahren zur maskenlosen teilchenstrahlbelichtung ATE527678T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP08450184 2008-11-17

Publications (1)

Publication Number Publication Date
ATE527678T1 true ATE527678T1 (de) 2011-10-15

Family

ID=41821851

Family Applications (1)

Application Number Title Priority Date Filing Date
AT09450211T ATE527678T1 (de) 2008-11-17 2009-11-05 Verfahren zur maskenlosen teilchenstrahlbelichtung

Country Status (4)

Country Link
US (1) US8222621B2 (de)
EP (1) EP2187427B1 (de)
JP (1) JP5372714B2 (de)
AT (1) ATE527678T1 (de)

Families Citing this family (68)

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EP2228817B1 (de) * 2009-03-09 2012-07-18 IMS Nanofabrication AG Allgemeine Punktverbreitungsfunktion bei Mehrstrahlenmusterung
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EP2757571B1 (de) 2013-01-17 2017-09-20 IMS Nanofabrication AG Hochspannungsisolationsvorrichtung für eine optische Vorrichtung mit geladenen Partikeln
US20140358830A1 (en) * 2013-05-30 2014-12-04 Synopsys, Inc. Lithographic hotspot detection using multiple machine learning kernels
JP2015023286A (ja) 2013-07-17 2015-02-02 アイエムエス ナノファブリケーション アーゲー 複数のブランキングアレイを有するパターン画定装置
EP2830083B1 (de) * 2013-07-25 2016-05-04 IMS Nanofabrication AG Verfahren zur Ladungsteilchen-Mehrstrahlbelichtung
US20150069260A1 (en) 2013-09-11 2015-03-12 Ims Nanofabrication Ag Charged-particle multi-beam apparatus having correction plate
EP2913838B1 (de) * 2014-02-28 2018-09-19 IMS Nanofabrication GmbH Kompensation defekter Beamlets in einem Ladungsträger-Mehrstrahlbelichtungswerkzeug
US20150311031A1 (en) * 2014-04-25 2015-10-29 Ims Nanofabrication Ag Multi-Beam Tool for Cutting Patterns
EP2937889B1 (de) 2014-04-25 2017-02-15 IMS Nanofabrication AG Mehrstrahliges werkzeug zum schneiden von mustern
JP6653125B2 (ja) 2014-05-23 2020-02-26 株式会社ニューフレアテクノロジー マルチ荷電粒子ビーム描画方法及びマルチ荷電粒子ビーム描画装置
EP2950325B1 (de) 2014-05-30 2018-11-28 IMS Nanofabrication GmbH Kompensation von dosisinhomogenität mittels überlappender belichtungsorte
JP6353278B2 (ja) 2014-06-03 2018-07-04 株式会社ニューフレアテクノロジー マルチ荷電粒子ビーム描画方法及びマルチ荷電粒子ビーム描画装置
KR102247563B1 (ko) 2014-06-12 2021-05-03 삼성전자 주식회사 전자빔을 이용한 노광 방법과 그 노광 방법을 이용한 마스크 및 반도체 소자 제조방법
US10216087B2 (en) 2014-06-13 2019-02-26 Intel Corporation Ebeam universal cutter
JP6892214B2 (ja) 2014-07-10 2021-06-23 アイエムエス ナノファブリケーション ゲーエムベーハー 畳み込みカーネルを使用する粒子ビーム描画機のカスタマイズ化
US9568907B2 (en) 2014-09-05 2017-02-14 Ims Nanofabrication Ag Correction of short-range dislocations in a multi-beam writer
EP2993684B1 (de) 2014-09-05 2017-03-08 IMS Nanofabrication AG Korrektur von verwerfungen mit kurzer reichweite in einem mehrstrahlschreiber
US9653263B2 (en) 2015-03-17 2017-05-16 Ims Nanofabrication Ag Multi-beam writing of pattern areas of relaxed critical dimension
KR102302015B1 (ko) 2015-03-17 2021-09-15 아이엠에스 나노패브릭케이션 게엠베하 완화된 임계 치수의 패턴 에어리어의 멀티빔 기록
EP3096342B1 (de) 2015-03-18 2017-09-20 IMS Nanofabrication AG Bidirektionales mehrstrahliges schreiben mit doppeldurchgang
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US10410831B2 (en) 2015-05-12 2019-09-10 Ims Nanofabrication Gmbh Multi-beam writing using inclined exposure stripes
KR102179130B1 (ko) * 2015-07-17 2020-11-18 아이엠에스 나노패브릭케이션 게엠베하 하전 입자 멀티빔 노출 툴의 결함 빔렛 보상
US9852876B2 (en) 2016-02-08 2017-12-26 Nuflare Technology, Inc. Multi charged particle beam writing apparatus and multi charged particle beam writing method
JP2016115946A (ja) * 2016-02-18 2016-06-23 株式会社ニューフレアテクノロジー マルチ荷電粒子ビーム描画方法
EP3258479B1 (de) 2016-06-13 2019-05-15 IMS Nanofabrication GmbH Verfahren zur kompensation von durch variation von musterbelichtungsdichte verursachten musterplatzierungsfehlern in einem mehrstrahlenschreiber
US10325756B2 (en) 2016-06-13 2019-06-18 Ims Nanofabrication Gmbh Method for compensating pattern placement errors caused by variation of pattern exposure density in a multi-beam writer
JP2018010895A (ja) * 2016-07-11 2018-01-18 株式会社ニューフレアテクノロジー ブランキングアパーチャアレイ、ブランキングアパーチャアレイの製造方法、及びマルチ荷電粒子ビーム描画装置
US10325757B2 (en) 2017-01-27 2019-06-18 Ims Nanofabrication Gmbh Advanced dose-level quantization of multibeam-writers
EP3355337B8 (de) 2017-01-27 2024-04-10 IMS Nanofabrication GmbH Erweiterte quantisierung auf dosisebene für mehrstrahlschreiber
US10522329B2 (en) 2017-08-25 2019-12-31 Ims Nanofabrication Gmbh Dose-related feature reshaping in an exposure pattern to be exposed in a multi beam writing apparatus
JP7201364B2 (ja) 2017-08-25 2023-01-10 アイエムエス ナノファブリケーション ゲーエムベーハー マルチビーム描画装置において露光される露光パターンにおける線量関連の特徴再形成
EP3460825B1 (de) 2017-09-18 2020-02-19 IMS Nanofabrication GmbH Verfahren zur bestrahlung eines ziels mit gittern mit eingeschränkter platzierung
US11569064B2 (en) 2017-09-18 2023-01-31 Ims Nanofabrication Gmbh Method for irradiating a target using restricted placement grids
EP3518272B1 (de) 2018-01-09 2025-06-25 IMS Nanofabrication GmbH Nichtlineare dosis- und unschärfeabhängige kantenplatzierungskorrektur
US10651010B2 (en) 2018-01-09 2020-05-12 Ims Nanofabrication Gmbh Non-linear dose- and blur-dependent edge placement correction
US10840054B2 (en) 2018-01-30 2020-11-17 Ims Nanofabrication Gmbh Charged-particle source and method for cleaning a charged-particle source using back-sputtering
EP3518268B1 (de) 2018-01-30 2024-09-25 IMS Nanofabrication GmbH Ladungsträgerquelle und verfahren zur reinigung einer ladungsträgerquelle mittels rücksputtering
US10483080B1 (en) * 2018-07-17 2019-11-19 ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH Charged particle beam device, multi-beam blanker for a charged particle beam device, and method for operating a charged particle beam device
US10593509B2 (en) 2018-07-17 2020-03-17 ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH Charged particle beam device, multi-beam blanker for a charged particle beam device, and method for operating a charged particle beam device
KR102835338B1 (ko) 2019-05-03 2025-07-17 아이엠에스 나노패브릭케이션 게엠베하 멀티 빔 라이터에서의 노출 슬롯의 지속 시간 조정
US11099482B2 (en) 2019-05-03 2021-08-24 Ims Nanofabrication Gmbh Adapting the duration of exposure slots in multi-beam writers
US11869746B2 (en) 2019-07-25 2024-01-09 Nuflare Technology, Inc. Multi-beam writing method and multi-beam writing apparatus
US11309163B2 (en) * 2019-11-07 2022-04-19 Applied Materials, Inc. Multibeamlet charged particle device and method
KR102919104B1 (ko) 2020-02-03 2026-01-29 아이엠에스 나노패브릭케이션 게엠베하 멀티―빔 라이터의 블러 변화 보정
KR102922552B1 (ko) 2020-04-24 2026-02-04 아이엠에스 나노패브릭케이션 게엠베하 대전 입자 소스
EP4095882A1 (de) 2021-05-25 2022-11-30 IMS Nanofabrication GmbH Musterdatenverarbeitung für programmierbare direktschreibgeräte
US12500060B2 (en) 2021-07-14 2025-12-16 Ims Nanofabrication Gmbh Electromagnetic lens
US12154756B2 (en) 2021-08-12 2024-11-26 Ims Nanofabrication Gmbh Beam pattern device having beam absorber structure
JP2023138912A (ja) 2022-03-21 2023-10-03 アイエムエス ナノファブリケーション ゲーエムベーハー リソグラフィ描画法における熱膨張の補正
JP2023165626A (ja) 2022-05-04 2023-11-16 アイエムエス ナノファブリケーション ゲーエムベーハー マルチビームパターン規定装置
JP2023166336A (ja) 2022-05-09 2023-11-21 アイエムエス ナノファブリケーション ゲーエムベーハー シャント装置を有する調節可能永久磁石レンズ
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JP2024012118A (ja) 2022-07-15 2024-01-25 アイエムエス ナノファブリケーション ゲーエムベーハー 温度制御要素を有する調節可能永久磁石レンズ
JP7811572B2 (ja) 2022-12-22 2026-02-05 アイエムエス ナノファブリケーション ゲーエムベーハー 荷電粒子レンズ、電磁レンズ及び荷電粒子光学装置
US12695055B2 (en) 2023-03-08 2026-07-28 Ims Nanofabrication Gmbh Optimizing image distortion in a multi beam charged particle processing apparatus
US20240304415A1 (en) 2023-03-08 2024-09-12 Ims Nanofabrication Gmbh Method for Determining Focal Properties in a Target Beam Field of a Multi-Beam Charged-Particle Processing Apparatus
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EP4654245A1 (de) 2024-05-10 2025-11-26 IMS Nanofabrication GmbH Steuerung der relativen position eines beweglichen ziels und von geladenen teilchenstrahlen in einer mehrsäulen-belichtungsvorrichtung
EP4672300A3 (de) 2024-05-10 2026-04-15 IMS Nanofabrication GmbH Vorrichtung und verfahren zum schreiben eines beweglichen ziels in einer mehrsäulen-belichtungsvorrichtung
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Also Published As

Publication number Publication date
JP2010123958A (ja) 2010-06-03
US8222621B2 (en) 2012-07-17
EP2187427A3 (de) 2010-10-13
US20100127185A1 (en) 2010-05-27
EP2187427B1 (de) 2011-10-05
EP2187427A2 (de) 2010-05-19
JP5372714B2 (ja) 2013-12-18

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