ATE527687T1 - Zwischenverbindungen zu kupfer in integrierten schaltungen - Google Patents
Zwischenverbindungen zu kupfer in integrierten schaltungenInfo
- Publication number
- ATE527687T1 ATE527687T1 AT01303322T AT01303322T ATE527687T1 AT E527687 T1 ATE527687 T1 AT E527687T1 AT 01303322 T AT01303322 T AT 01303322T AT 01303322 T AT01303322 T AT 01303322T AT E527687 T1 ATE527687 T1 AT E527687T1
- Authority
- AT
- Austria
- Prior art keywords
- copper
- barrier layer
- integrated circuits
- intermediate connections
- interconnections
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/071—Connecting or disconnecting
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/01—Manufacture or treatment
- H10W72/012—Manufacture or treatment of bump connectors, dummy bumps or thermal bumps
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/071—Connecting or disconnecting
- H10W72/075—Connecting or disconnecting of bond wires
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/01—Manufacture or treatment
- H10W72/019—Manufacture or treatment of bond pads
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/01—Manufacture or treatment
- H10W72/019—Manufacture or treatment of bond pads
- H10W72/01951—Changing the shapes of bond pads
- H10W72/01955—Changing the shapes of bond pads by using masks
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
- H10W72/241—Dispositions, e.g. layouts
- H10W72/242—Dispositions, e.g. layouts relative to the surface, e.g. recessed, protruding
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
- H10W72/251—Materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
- H10W72/251—Materials
- H10W72/252—Materials comprising solid metals or solid metalloids, e.g. PbSn, Ag or Cu
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
- H10W72/29—Bond pads specially adapted therefor
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/50—Bond wires
- H10W72/521—Structures or relative sizes of bond wires
- H10W72/522—Multilayered bond wires, e.g. having a coating concentric around a core
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/50—Bond wires
- H10W72/521—Structures or relative sizes of bond wires
- H10W72/522—Multilayered bond wires, e.g. having a coating concentric around a core
- H10W72/523—Multilayered bond wires, e.g. having a coating concentric around a core characterised by the structures of the outermost layers, e.g. multilayered coatings
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/50—Bond wires
- H10W72/531—Shapes of wire connectors
- H10W72/536—Shapes of wire connectors the connected ends being ball-shaped
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/50—Bond wires
- H10W72/551—Materials of bond wires
- H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/50—Bond wires
- H10W72/551—Materials of bond wires
- H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
- H10W72/5522—Materials of bond wires comprising metals or metalloids, e.g. silver comprising gold [Au]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/50—Bond wires
- H10W72/551—Materials of bond wires
- H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
- H10W72/5524—Materials of bond wires comprising metals or metalloids, e.g. silver comprising aluminium [Al]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/50—Bond wires
- H10W72/551—Materials of bond wires
- H10W72/555—Materials of bond wires of outermost layers of multilayered bond wires, e.g. material of a coating
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/50—Bond wires
- H10W72/59—Bond pads specially adapted therefor
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/90—Bond pads, in general
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/90—Bond pads, in general
- H10W72/921—Structures or relative sizes of bond pads
- H10W72/923—Bond pads having multiple stacked layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/90—Bond pads, in general
- H10W72/951—Materials of bond pads
- H10W72/952—Materials of bond pads comprising metals or metalloids, e.g. PbSn, Ag or Cu
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Wire Bonding (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US09/546,037 US6620720B1 (en) | 2000-04-10 | 2000-04-10 | Interconnections to copper IC's |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ATE527687T1 true ATE527687T1 (de) | 2011-10-15 |
Family
ID=24178596
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AT01303322T ATE527687T1 (de) | 2000-04-10 | 2001-04-09 | Zwischenverbindungen zu kupfer in integrierten schaltungen |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US6620720B1 (de) |
| EP (1) | EP1146552B1 (de) |
| JP (1) | JP2001351940A (de) |
| KR (1) | KR100857727B1 (de) |
| AT (1) | ATE527687T1 (de) |
| TW (1) | TWI223427B (de) |
Families Citing this family (58)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6495442B1 (en) * | 2000-10-18 | 2002-12-17 | Magic Corporation | Post passivation interconnection schemes on top of the IC chips |
| DE60108413T2 (de) | 2000-11-10 | 2005-06-02 | Unitive Electronics, Inc. | Verfahren zum positionieren von komponenten mit hilfe flüssiger antriebsmittel und strukturen hierfür |
| US6863209B2 (en) | 2000-12-15 | 2005-03-08 | Unitivie International Limited | Low temperature methods of bonding components |
| US20020086520A1 (en) * | 2001-01-02 | 2002-07-04 | Advanced Semiconductor Engineering Inc. | Semiconductor device having bump electrode |
| US7498196B2 (en) | 2001-03-30 | 2009-03-03 | Megica Corporation | Structure and manufacturing method of chip scale package |
| JP2003031576A (ja) * | 2001-07-17 | 2003-01-31 | Nec Corp | 半導体素子及びその製造方法 |
| US6605524B1 (en) * | 2001-09-10 | 2003-08-12 | Taiwan Semiconductor Manufacturing Company | Bumping process to increase bump height and to create a more robust bump structure |
| US6762122B2 (en) * | 2001-09-27 | 2004-07-13 | Unitivie International Limited | Methods of forming metallurgy structures for wire and solder bonding |
| US6683383B2 (en) * | 2001-10-18 | 2004-01-27 | Intel Corporation | Wirebond structure and method to connect to a microelectronic die |
| DE10222909A1 (de) * | 2002-05-22 | 2003-12-04 | Unaxis Balzers Ag | Sputterverfahren bzw. Vorrichtung zur Herstellung von eigenspannungsoptimierten Beschichtungen |
| US7547623B2 (en) | 2002-06-25 | 2009-06-16 | Unitive International Limited | Methods of forming lead free solder bumps |
| US7531898B2 (en) | 2002-06-25 | 2009-05-12 | Unitive International Limited | Non-Circular via holes for bumping pads and related structures |
| US6960828B2 (en) | 2002-06-25 | 2005-11-01 | Unitive International Limited | Electronic structures including conductive shunt layers |
| US20040007779A1 (en) * | 2002-07-15 | 2004-01-15 | Diane Arbuthnot | Wafer-level method for fine-pitch, high aspect ratio chip interconnect |
| TWI225899B (en) | 2003-02-18 | 2005-01-01 | Unitive Semiconductor Taiwan C | Etching solution and method for manufacturing conductive bump using the etching solution to selectively remove barrier layer |
| US7919787B2 (en) * | 2003-06-27 | 2011-04-05 | Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. | Semiconductor device with a light emitting semiconductor die |
| US7279355B2 (en) * | 2003-06-27 | 2007-10-09 | Avago Technologies Ecbuip (Singapore) Pte Ltd | Method for fabricating a packaging device for semiconductor die and semiconductor device incorporating same |
| US7256486B2 (en) * | 2003-06-27 | 2007-08-14 | Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. | Packaging device for semiconductor die, semiconductor device incorporating same and method of making same |
| JP2005093571A (ja) * | 2003-09-16 | 2005-04-07 | Hitachi Metals Ltd | 薄膜配線層 |
| US6995475B2 (en) * | 2003-09-18 | 2006-02-07 | International Business Machines Corporation | I/C chip suitable for wire bonding |
| US6960831B2 (en) * | 2003-09-25 | 2005-11-01 | International Business Machines Corporation | Semiconductor device having a composite layer in addition to a barrier layer between copper wiring and aluminum bond pad |
| US7005752B2 (en) | 2003-10-20 | 2006-02-28 | Texas Instruments Incorporated | Direct bumping on integrated circuit contacts enabled by metal-to-insulator adhesion |
| WO2005059957A2 (en) * | 2003-12-12 | 2005-06-30 | Great Wall Semiconductor Corporation | Metal interconnect system and method for direct die attachment |
| JP4406300B2 (ja) * | 2004-02-13 | 2010-01-27 | 株式会社東芝 | 半導体装置及びその製造方法 |
| US7410833B2 (en) * | 2004-03-31 | 2008-08-12 | International Business Machines Corporation | Interconnections for flip-chip using lead-free solders and having reaction barrier layers |
| JP4696532B2 (ja) * | 2004-05-20 | 2011-06-08 | 株式会社デンソー | パワー複合集積型半導体装置およびその製造方法 |
| US7262498B2 (en) * | 2004-10-19 | 2007-08-28 | Hewlett-Packard Development Company, L.P. | Assembly with a ring and bonding pads formed of a same material on a substrate |
| EP1693889B1 (de) | 2005-02-16 | 2017-05-24 | Imec | Verfahren zur Erhöhung der Initierung vom Wachstum einer Schicht |
| US7927933B2 (en) * | 2005-02-16 | 2011-04-19 | Imec | Method to enhance the initiation of film growth |
| US7381634B2 (en) * | 2005-04-13 | 2008-06-03 | Stats Chippac Ltd. | Integrated circuit system for bonding |
| US20070048991A1 (en) * | 2005-08-23 | 2007-03-01 | Taiwan Semiconductor Manufacturing Co., Ltd. | Copper interconnect structures and fabrication method thereof |
| US8319343B2 (en) * | 2005-09-21 | 2012-11-27 | Agere Systems Llc | Routing under bond pad for the replacement of an interconnect layer |
| US7952206B2 (en) * | 2005-09-27 | 2011-05-31 | Agere Systems Inc. | Solder bump structure for flip chip semiconductor devices and method of manufacture therefore |
| US8076779B2 (en) * | 2005-11-08 | 2011-12-13 | Lsi Corporation | Reduction of macro level stresses in copper/low-K wafers |
| US8552560B2 (en) * | 2005-11-18 | 2013-10-08 | Lsi Corporation | Alternate pad structures/passivation inegration schemes to reduce or eliminate IMC cracking in post wire bonded dies during Cu/Low-K BEOL processing |
| US7504728B2 (en) * | 2005-12-09 | 2009-03-17 | Agere Systems Inc. | Integrated circuit having bond pad with improved thermal and mechanical properties |
| US7674701B2 (en) | 2006-02-08 | 2010-03-09 | Amkor Technology, Inc. | Methods of forming metal layers using multi-layer lift-off patterns |
| US7932615B2 (en) | 2006-02-08 | 2011-04-26 | Amkor Technology, Inc. | Electronic devices including solder bumps on compliant dielectric layers |
| JP5162909B2 (ja) * | 2006-04-03 | 2013-03-13 | 豊田合成株式会社 | 半導体発光素子 |
| KR100846569B1 (ko) * | 2006-06-14 | 2008-07-15 | 매그나칩 반도체 유한회사 | Mems 소자의 패키지 및 그 제조방법 |
| DE102006044691B4 (de) * | 2006-09-22 | 2012-06-21 | Infineon Technologies Ag | Verfahren zum Herstellen einer Anschlussleitstruktur eines Bauelements |
| US7521287B2 (en) * | 2006-11-20 | 2009-04-21 | International Business Machines Corporation | Wire and solder bond forming methods |
| US7601628B2 (en) * | 2006-11-20 | 2009-10-13 | International Business Machines Corporation | Wire and solder bond forming methods |
| JP2008159948A (ja) * | 2006-12-25 | 2008-07-10 | Rohm Co Ltd | 半導体装置 |
| JP5045336B2 (ja) * | 2007-04-16 | 2012-10-10 | 豊田合成株式会社 | 半導体発光素子 |
| JP5069051B2 (ja) * | 2007-07-13 | 2012-11-07 | Jx日鉱日石金属株式会社 | ニッケル合金スパッタリングターゲット |
| US7939949B2 (en) | 2007-09-27 | 2011-05-10 | Micron Technology, Inc. | Semiconductor device with copper wirebond sites and methods of making same |
| DE102007046556A1 (de) | 2007-09-28 | 2009-04-02 | Infineon Technologies Austria Ag | Halbleiterbauelement mit Kupfermetallisierungen |
| US7888257B2 (en) * | 2007-10-10 | 2011-02-15 | Agere Systems Inc. | Integrated circuit package including wire bonds |
| JP2011502352A (ja) * | 2007-10-31 | 2011-01-20 | アギア システムズ インコーポレーテッド | 半導体デバイスのためのボンド・パッド・サポート構造 |
| US7829450B2 (en) * | 2007-11-07 | 2010-11-09 | Infineon Technologies Ag | Method of processing a contact pad, method of manufacturing a contact pad, and integrated circuit element |
| US9953940B2 (en) | 2015-06-26 | 2018-04-24 | International Business Machines Corporation | Corrosion resistant aluminum bond pad structure |
| PL232559B1 (pl) * | 2017-07-17 | 2019-06-28 | Instytut Tech Elektronowej | Sposób wytwarzania metalizacji wielowarstwowej, metalizacja wielowarstwowa oraz zastosowanie metalizacji wielowarstwowej |
| JP7305587B2 (ja) | 2020-03-17 | 2023-07-10 | 株式会社東芝 | 半導体装置および検査装置 |
| CN116685714B (zh) | 2021-12-29 | 2026-04-10 | 京东方科技集团股份有限公司 | 线路板、功能背板、背光模组、显示面板及显示装置 |
| US12581596B2 (en) | 2021-12-31 | 2026-03-17 | Boe Technology Group Co., Ltd. | Wiring board, functional backplane and method for manufacturing the same |
| US12610675B2 (en) | 2022-04-21 | 2026-04-21 | Boe Technology Group Co., Ltd. | Circuit board, light-emitting substrate, backlight module, display panel and display device |
| WO2024092439A1 (zh) | 2022-10-31 | 2024-05-10 | 京东方科技集团股份有限公司 | 线路板、发光基板、背光模组及显示装置 |
Family Cites Families (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5384466A (en) * | 1976-12-29 | 1978-07-25 | Matsushita Electric Ind Co Ltd | Manufacture of semiconductor device |
| US4330329A (en) * | 1979-11-28 | 1982-05-18 | Tanaka Denshi Kogyo Kabushiki Kaisha | Gold bonding wire for semiconductor elements and the semiconductor element |
| US4661375A (en) * | 1985-04-22 | 1987-04-28 | At&T Technologies, Inc. | Method for increasing the height of solder bumps |
| US5169680A (en) * | 1987-05-07 | 1992-12-08 | Intel Corporation | Electroless deposition for IC fabrication |
| US5367195A (en) * | 1993-01-08 | 1994-11-22 | International Business Machines Corporation | Structure and method for a superbarrier to prevent diffusion between a noble and a non-noble metal |
| US5508229A (en) * | 1994-05-24 | 1996-04-16 | National Semiconductor Corporation | Method for forming solder bumps in semiconductor devices |
| JPH08204250A (ja) * | 1995-01-20 | 1996-08-09 | Asahi Chem Ind Co Ltd | 半導体装置 |
| US5755859A (en) * | 1995-08-24 | 1998-05-26 | International Business Machines Corporation | Cobalt-tin alloys and their applications for devices, chip interconnections and packaging |
| JP2882380B2 (ja) * | 1996-09-05 | 1999-04-12 | 日本電気株式会社 | 半導体装置及びその製造方法 |
| TW571373B (en) * | 1996-12-04 | 2004-01-11 | Seiko Epson Corp | Semiconductor device, circuit substrate, and electronic machine |
| US6441487B2 (en) * | 1997-10-20 | 2002-08-27 | Flip Chip Technologies, L.L.C. | Chip scale package using large ductile solder balls |
| US6875681B1 (en) * | 1997-12-31 | 2005-04-05 | Intel Corporation | Wafer passivation structure and method of fabrication |
| JP2943805B1 (ja) * | 1998-09-17 | 1999-08-30 | 日本電気株式会社 | 半導体装置及びその製造方法 |
| US6187680B1 (en) * | 1998-10-07 | 2001-02-13 | International Business Machines Corporation | Method/structure for creating aluminum wirebound pad on copper BEOL |
| US6281106B1 (en) * | 1999-11-25 | 2001-08-28 | Delphi Technologies, Inc. | Method of solder bumping a circuit component |
-
2000
- 2000-04-10 US US09/546,037 patent/US6620720B1/en not_active Expired - Lifetime
-
2001
- 2001-04-09 TW TW090108450A patent/TWI223427B/zh not_active IP Right Cessation
- 2001-04-09 KR KR1020010018579A patent/KR100857727B1/ko not_active Expired - Lifetime
- 2001-04-09 AT AT01303322T patent/ATE527687T1/de not_active IP Right Cessation
- 2001-04-09 EP EP01303322A patent/EP1146552B1/de not_active Expired - Lifetime
- 2001-04-10 JP JP2001110719A patent/JP2001351940A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| KR20010090777A (ko) | 2001-10-19 |
| EP1146552B1 (de) | 2011-10-05 |
| EP1146552A2 (de) | 2001-10-17 |
| EP1146552A3 (de) | 2003-04-16 |
| TWI223427B (en) | 2004-11-01 |
| KR100857727B1 (ko) | 2008-09-10 |
| JP2001351940A (ja) | 2001-12-21 |
| US6620720B1 (en) | 2003-09-16 |
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