ATE527689T1 - System und methode zur integration von in-situ messung bei einem waferbehandlungsprozess - Google Patents

System und methode zur integration von in-situ messung bei einem waferbehandlungsprozess

Info

Publication number
ATE527689T1
ATE527689T1 AT04755214T AT04755214T ATE527689T1 AT E527689 T1 ATE527689 T1 AT E527689T1 AT 04755214 T AT04755214 T AT 04755214T AT 04755214 T AT04755214 T AT 04755214T AT E527689 T1 ATE527689 T1 AT E527689T1
Authority
AT
Austria
Prior art keywords
integrating
treatment process
situ measurement
wafer treatment
wafer
Prior art date
Application number
AT04755214T
Other languages
English (en)
Inventor
John Boyd
Larios John De
Michael Ravkin
Fred Redeker
Original Assignee
Lam Res Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lam Res Corp filed Critical Lam Res Corp
Application granted granted Critical
Publication of ATE527689T1 publication Critical patent/ATE527689T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0406—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0406—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H10P72/0408—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0406—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H10P72/0411—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H10P72/0414—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S134/00—Cleaning and liquid contact with solids
    • Y10S134/902—Semiconductor wafer

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Force Measurement Appropriate To Specific Purposes (AREA)
AT04755214T 2003-06-24 2004-06-09 System und methode zur integration von in-situ messung bei einem waferbehandlungsprozess ATE527689T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/606,022 US7252097B2 (en) 2002-09-30 2003-06-24 System and method for integrating in-situ metrology within a wafer process
PCT/US2004/018900 WO2005006431A1 (en) 2003-06-24 2004-06-09 System and method for integrating in-situ metrology within a wafer process

Publications (1)

Publication Number Publication Date
ATE527689T1 true ATE527689T1 (de) 2011-10-15

Family

ID=34062272

Family Applications (1)

Application Number Title Priority Date Filing Date
AT04755214T ATE527689T1 (de) 2003-06-24 2004-06-09 System und methode zur integration von in-situ messung bei einem waferbehandlungsprozess

Country Status (9)

Country Link
US (1) US7252097B2 (de)
EP (1) EP1636835B1 (de)
JP (1) JP4384662B2 (de)
KR (1) KR101047822B1 (de)
CN (2) CN100550334C (de)
AT (1) ATE527689T1 (de)
MY (1) MY135489A (de)
TW (1) TWI246140B (de)
WO (1) WO2005006431A1 (de)

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US7045018B2 (en) * 2002-09-30 2006-05-16 Lam Research Corporation Substrate brush scrubbing and proximity cleaning-drying sequence using compatible chemistries, and method, apparatus, and system for implementing the same
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US7997288B2 (en) * 2002-09-30 2011-08-16 Lam Research Corporation Single phase proximity head having a controlled meniscus for treating a substrate
US7513262B2 (en) 2002-09-30 2009-04-07 Lam Research Corporation Substrate meniscus interface and methods for operation
US7367345B1 (en) 2002-09-30 2008-05-06 Lam Research Corporation Apparatus and method for providing a confined liquid for immersion lithography
US7632376B1 (en) 2002-09-30 2009-12-15 Lam Research Corporation Method and apparatus for atomic layer deposition (ALD) in a proximity system
US7389783B2 (en) * 2002-09-30 2008-06-24 Lam Research Corporation Proximity meniscus manifold
US8236382B2 (en) * 2002-09-30 2012-08-07 Lam Research Corporation Proximity substrate preparation sequence, and method, apparatus, and system for implementing the same
US7293571B2 (en) 2002-09-30 2007-11-13 Lam Research Corporation Substrate proximity processing housing and insert for generating a fluid meniscus
US7383843B2 (en) * 2002-09-30 2008-06-10 Lam Research Corporation Method and apparatus for processing wafer surfaces using thin, high velocity fluid layer
US6988326B2 (en) * 2002-09-30 2006-01-24 Lam Research Corporation Phobic barrier meniscus separation and containment
US7614411B2 (en) 2002-09-30 2009-11-10 Lam Research Corporation Controls of ambient environment during wafer drying using proximity head
US7675000B2 (en) * 2003-06-24 2010-03-09 Lam Research Corporation System method and apparatus for dry-in, dry-out, low defect laser dicing using proximity technology
US6809794B1 (en) * 2003-06-27 2004-10-26 Asml Holding N.V. Immersion photolithography system and method using inverted wafer-projection optics interface
KR101288140B1 (ko) * 2003-09-03 2013-07-19 가부시키가이샤 니콘 액침 리소그래피용 유체를 제공하기 위한 장치 및 방법
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US8054448B2 (en) * 2004-05-04 2011-11-08 Nikon Corporation Apparatus and method for providing fluid for immersion lithography
US8844461B2 (en) * 2007-04-16 2014-09-30 Lam Research Corporation Fluid handling system for wafer electroless plating and associated methods
US8485120B2 (en) 2007-04-16 2013-07-16 Lam Research Corporation Method and apparatus for wafer electroless plating
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JP4810411B2 (ja) * 2006-11-30 2011-11-09 東京応化工業株式会社 処理装置
JP4755573B2 (ja) * 2006-11-30 2011-08-24 東京応化工業株式会社 処理装置および処理方法、ならびに表面処理治具
US8146902B2 (en) * 2006-12-21 2012-04-03 Lam Research Corporation Hybrid composite wafer carrier for wet clean equipment
US20100015731A1 (en) * 2007-02-20 2010-01-21 Lam Research Corporation Method of low-k dielectric film repair
US7975708B2 (en) * 2007-03-30 2011-07-12 Lam Research Corporation Proximity head with angled vacuum conduit system, apparatus and method
US8464736B1 (en) 2007-03-30 2013-06-18 Lam Research Corporation Reclaim chemistry
US8141566B2 (en) * 2007-06-19 2012-03-27 Lam Research Corporation System, method and apparatus for maintaining separation of liquids in a controlled meniscus
JP4971078B2 (ja) * 2007-08-30 2012-07-11 東京応化工業株式会社 表面処理装置
US8051863B2 (en) * 2007-10-18 2011-11-08 Lam Research Corporation Methods of and apparatus for correlating gap value to meniscus stability in processing of a wafer surface by a recipe-controlled meniscus
JP2009141081A (ja) * 2007-12-05 2009-06-25 Sumco Corp 半導体ウェーハ表面検査装置
US8317934B2 (en) * 2009-05-13 2012-11-27 Lam Research Corporation Multi-stage substrate cleaning method and apparatus
US20100294742A1 (en) * 2009-05-22 2010-11-25 Enrico Magni Modifications to Surface Topography of Proximity Head
WO2011017638A2 (en) * 2009-08-07 2011-02-10 Fas Holdings Group, Llc. Segmented or selected-area coating
NL2007182A (en) * 2010-08-23 2012-02-27 Asml Netherlands Bv Fluid handling structure, module for an immersion lithographic apparatus, lithographic apparatus and device manufacturing method.
US20130052360A1 (en) * 2011-08-30 2013-02-28 Tadashi Maegawa Substrate processing apparatus, substrate processing method, and nozzle
US9760020B2 (en) 2012-11-21 2017-09-12 Kla-Tencor Corporation In-situ metrology
TW201636460A (zh) * 2015-04-02 2016-10-16 台灣先進系統股份有限公司 電路板的真空預潤方法與裝置
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CN110560424A (zh) * 2019-09-18 2019-12-13 宁波南大光电材料有限公司 一种用于光刻设备的非接触式超声清洗装置
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Also Published As

Publication number Publication date
EP1636835A1 (de) 2006-03-22
TW200507145A (en) 2005-02-16
US20040182422A1 (en) 2004-09-23
CN100550334C (zh) 2009-10-14
CN1839353B (zh) 2013-08-21
KR101047822B1 (ko) 2011-07-08
WO2005006431A1 (en) 2005-01-20
CN1839353A (zh) 2006-09-27
CN1853264A (zh) 2006-10-25
JP4384662B2 (ja) 2009-12-16
TWI246140B (en) 2005-12-21
EP1636835B1 (de) 2011-10-05
KR20060063805A (ko) 2006-06-12
MY135489A (en) 2008-04-30
JP2007524225A (ja) 2007-08-23
US7252097B2 (en) 2007-08-07

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