ATE528364T1 - Schleiffreies poliersystem - Google Patents

Schleiffreies poliersystem

Info

Publication number
ATE528364T1
ATE528364T1 AT06813337T AT06813337T ATE528364T1 AT E528364 T1 ATE528364 T1 AT E528364T1 AT 06813337 T AT06813337 T AT 06813337T AT 06813337 T AT06813337 T AT 06813337T AT E528364 T1 ATE528364 T1 AT E528364T1
Authority
AT
Austria
Prior art keywords
polishing system
grind
polishing
free polishing
substrate
Prior art date
Application number
AT06813337T
Other languages
English (en)
Inventor
Isaac Cherian
Kevin Moeggenborg
Original Assignee
Cabot Microelectronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cabot Microelectronics Corp filed Critical Cabot Microelectronics Corp
Application granted granted Critical
Publication of ATE528364T1 publication Critical patent/ATE528364T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/403—Chemomechanical polishing [CMP] of conductive or resistive materials
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/04—Aqueous dispersions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass

Landscapes

  • Chemical & Material Sciences (AREA)
  • Dispersion Chemistry (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
AT06813337T 2005-08-17 2006-08-09 Schleiffreies poliersystem ATE528364T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/205,428 US20070039926A1 (en) 2005-08-17 2005-08-17 Abrasive-free polishing system
PCT/US2006/030982 WO2007021716A2 (en) 2005-08-17 2006-08-09 Abrasive-free polishing system

Publications (1)

Publication Number Publication Date
ATE528364T1 true ATE528364T1 (de) 2011-10-15

Family

ID=37499371

Family Applications (1)

Application Number Title Priority Date Filing Date
AT06813337T ATE528364T1 (de) 2005-08-17 2006-08-09 Schleiffreies poliersystem

Country Status (11)

Country Link
US (1) US20070039926A1 (de)
EP (1) EP1924666B1 (de)
JP (1) JP5144516B2 (de)
KR (1) KR101109334B1 (de)
CN (1) CN101263209B (de)
AT (1) ATE528364T1 (de)
IL (1) IL189504A (de)
MY (1) MY146300A (de)
SG (1) SG178632A1 (de)
TW (1) TWI343296B (de)
WO (1) WO2007021716A2 (de)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070117497A1 (en) * 2005-11-22 2007-05-24 Cabot Microelectronics Corporation Friction reducing aid for CMP
CN101333419B (zh) * 2008-08-05 2011-06-29 清华大学 一种集成电路铜布线的无磨粒化学机械抛光液
CN103493183B (zh) * 2011-04-26 2016-06-08 旭硝子株式会社 非氧化物单晶基板的研磨方法
CN103857765B (zh) 2011-10-07 2015-11-25 旭硝子株式会社 碳化硅单晶基板及研磨液
CN110431210B (zh) * 2017-03-23 2022-09-20 福吉米株式会社 研磨用组合物
KR102765340B1 (ko) * 2019-08-30 2025-02-13 세인트-고바인 세라믹스 앤드 플라스틱스, 인크. 재료 제거 작업을 수행하기 위한 유체 조성물 및 방법
KR102765341B1 (ko) * 2019-08-30 2025-02-13 세인트-고바인 세라믹스 앤드 플라스틱스, 인크. 재료 제거 작업을 수행하기 위한 조성물 및 방법
TWI873902B (zh) * 2022-10-11 2025-02-21 美商Ｃｍｃ材料有限責任公司 用於高度摻雜硼之矽膜之化學機械拋光組合物

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4277355A (en) * 1979-09-28 1981-07-07 Alexander Farcnik Insulative fireproof textured coating
US5352277A (en) * 1988-12-12 1994-10-04 E. I. Du Pont De Nemours & Company Final polishing composition
JPH09306881A (ja) * 1996-05-15 1997-11-28 Kobe Steel Ltd シリコン用研磨液組成物および研磨方法
MY133700A (en) * 1996-05-15 2007-11-30 Kobe Steel Ltd Polishing fluid composition and polishing method
US20040134873A1 (en) * 1996-07-25 2004-07-15 Li Yao Abrasive-free chemical mechanical polishing composition and polishing process containing same
SG54606A1 (en) * 1996-12-05 1998-11-16 Fujimi Inc Polishing composition
US6276996B1 (en) * 1998-11-10 2001-08-21 Micron Technology, Inc. Copper chemical-mechanical polishing process using a fixed abrasive polishing pad and a copper layer chemical-mechanical polishing solution specifically adapted for chemical-mechanical polishing with a fixed abrasive pad
US6429133B1 (en) * 1999-08-31 2002-08-06 Micron Technology, Inc. Composition compatible with aluminum planarization and methods therefore
WO2001019935A1 (en) * 1999-09-15 2001-03-22 Rodel Holdings, Inc. Slurry for forming insoluble silicate during chemical-mechanical polishing
JP2001144042A (ja) * 1999-11-11 2001-05-25 Hitachi Chem Co Ltd 金属研磨方法
US6602117B1 (en) * 2000-08-30 2003-08-05 Micron Technology, Inc. Slurry for use with fixed-abrasive polishing pads in polishing semiconductor device conductive structures that include copper and tungsten and polishing methods
US6551935B1 (en) * 2000-08-31 2003-04-22 Micron Technology, Inc. Slurry for use in polishing semiconductor device conductive structures that include copper and tungsten and polishing methods
US6709316B1 (en) * 2000-10-27 2004-03-23 Applied Materials, Inc. Method and apparatus for two-step barrier layer polishing
US6800218B2 (en) * 2001-08-23 2004-10-05 Advanced Technology Materials, Inc. Abrasive free formulations for chemical mechanical polishing of copper and associated materials and method of using same
US20030189186A1 (en) * 2002-03-29 2003-10-09 Everlight Usa, Inc. Chemical-mechanical polishing composition for metal layers
US6974777B2 (en) * 2002-06-07 2005-12-13 Cabot Microelectronics Corporation CMP compositions for low-k dielectric materials
JP4152218B2 (ja) * 2003-02-25 2008-09-17 Ｎｅｃエレクトロニクス株式会社 化学的機械的研磨用スラリー
JP2004276219A (ja) * 2003-03-18 2004-10-07 Ebara Corp 電解加工液、電解加工装置及び配線加工方法
US7485241B2 (en) * 2003-09-11 2009-02-03 Cabot Microelectronics Corporation Chemical-mechanical polishing composition and method for using the same

Also Published As

Publication number Publication date
WO2007021716A3 (en) 2007-06-07
MY146300A (en) 2012-07-31
EP1924666B1 (de) 2011-10-12
TW200730298A (en) 2007-08-16
CN101263209A (zh) 2008-09-10
JP2009505423A (ja) 2009-02-05
KR101109334B1 (ko) 2012-01-31
IL189504A0 (en) 2008-08-07
CN101263209B (zh) 2011-07-13
IL189504A (en) 2012-12-31
SG178632A1 (en) 2012-03-29
EP1924666A2 (de) 2008-05-28
TWI343296B (en) 2011-06-11
US20070039926A1 (en) 2007-02-22
WO2007021716A2 (en) 2007-02-22
KR20080035699A (ko) 2008-04-23
JP5144516B2 (ja) 2013-02-13

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