ATE528764T1 - Magnetoresistive tcam-direktzugriffsspeicherzelle - Google Patents
Magnetoresistive tcam-direktzugriffsspeicherzelleInfo
- Publication number
- ATE528764T1 ATE528764T1 AT09174930T AT09174930T ATE528764T1 AT E528764 T1 ATE528764 T1 AT E528764T1 AT 09174930 T AT09174930 T AT 09174930T AT 09174930 T AT09174930 T AT 09174930T AT E528764 T1 ATE528764 T1 AT E528764T1
- Authority
- AT
- Austria
- Prior art keywords
- field line
- storage layer
- memory cell
- access memory
- sense
- Prior art date
Links
- 230000005415 magnetization Effects 0.000 abstract 2
- 238000000034 method Methods 0.000 abstract 2
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C15/00—Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out by searching for one or more of these characteristic parts, i.e. associative or content-addressed stores
- G11C15/02—Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out by searching for one or more of these characteristic parts, i.e. associative or content-addressed stores using magnetic elements
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1659—Cell access
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1673—Reading or sensing circuits or methods
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1675—Writing or programming circuits or methods
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C15/00—Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out by searching for one or more of these characteristic parts, i.e. associative or content-addressed stores
- G11C15/04—Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out by searching for one or more of these characteristic parts, i.e. associative or content-addressed stores using semiconductor elements
- G11C15/046—Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out by searching for one or more of these characteristic parts, i.e. associative or content-addressed stores using semiconductor elements using non-volatile storage elements
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Hall/Mr Elements (AREA)
- Mram Or Spin Memory Techniques (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP08291025 | 2008-11-04 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ATE528764T1 true ATE528764T1 (de) | 2011-10-15 |
Family
ID=41346777
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AT09174930T ATE528764T1 (de) | 2008-11-04 | 2009-11-03 | Magnetoresistive tcam-direktzugriffsspeicherzelle |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US8228703B2 (de) |
| EP (1) | EP2204814B1 (de) |
| JP (1) | JP5674302B2 (de) |
| AT (1) | ATE528764T1 (de) |
Families Citing this family (27)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8218349B2 (en) * | 2009-05-26 | 2012-07-10 | Crocus Technology Sa | Non-volatile logic devices using magnetic tunnel junctions |
| US8400066B1 (en) | 2010-08-01 | 2013-03-19 | Lawrence T. Pileggi | Magnetic logic circuits and systems incorporating same |
| WO2012075330A2 (en) | 2010-12-01 | 2012-06-07 | Crocus Technology, Inc. | Apparatus, system, and method for matching patterns with an ultra fast check engine |
| EP2523105B1 (de) * | 2011-05-10 | 2019-12-04 | Crocus Technology S.A. | Informationsverarbeitungsvorrichtung mit einem Festwertspeicher und Verfahren zum Patchen des Festwertspeichers |
| US8908407B1 (en) | 2011-07-30 | 2014-12-09 | Rambus Inc. | Content addressable memory (“CAM”) |
| US8611140B2 (en) | 2011-09-21 | 2013-12-17 | Crocus Technology Inc. | Magnetic random access memory devices including shared heating straps |
| US8611141B2 (en) * | 2011-09-21 | 2013-12-17 | Crocus Technology Inc. | Magnetic random access memory devices including heating straps |
| BR112014008719A2 (pt) * | 2011-10-10 | 2017-04-18 | Crocus Tech Inc | aparelho, sistema e método para gravar múltiplas células de memória magnética de acesso aleatório com uma única linha de campo |
| EP2626861B1 (de) * | 2012-02-13 | 2015-01-07 | Crocus Technology S.A. | Auf Hochgeschwindigkeits-Magnetdirektzugriffsspeicher basierte Ternär-CAM |
| KR20130093394A (ko) | 2012-02-14 | 2013-08-22 | 삼성전자주식회사 | 멀티 모드 스위칭 전류를 사용하여 기입 동작을 수행하는 저항성 메모리 장치, 이를 포함하는 메모리 시스템 및 저항성 메모리 장치의 데이터 기입 방법 |
| US8933750B2 (en) * | 2012-02-17 | 2015-01-13 | Crocus Technology Inc. | Magnetic logic units configured as an amplifier |
| US9563597B2 (en) | 2012-03-19 | 2017-02-07 | Rambus Inc. | High capacity memory systems with inter-rank skew tolerance |
| JP6004465B2 (ja) * | 2012-03-26 | 2016-10-05 | 国立大学法人東北大学 | 不揮発機能メモリ装置 |
| US9047950B2 (en) * | 2012-09-11 | 2015-06-02 | The Regents Of The University Of California | Read-disturbance-free nonvolatile content addressable memory (CAM) |
| US9548382B2 (en) | 2012-10-12 | 2017-01-17 | Northeastern University | Spintronic device |
| US9087572B2 (en) | 2012-11-29 | 2015-07-21 | Rambus Inc. | Content addressable memory |
| US9087983B2 (en) * | 2013-02-25 | 2015-07-21 | Yimin Guo | Self-aligned process for fabricating voltage-gated MRAM |
| US9524765B2 (en) * | 2014-08-15 | 2016-12-20 | Qualcomm Incorporated | Differential magnetic tunnel junction pair including a sense layer with a high coercivity portion |
| EP3284093B1 (de) | 2015-04-14 | 2021-08-04 | Cambou, Bertrand, F. | Speicherschaltungen mit einem blockierzustand |
| WO2016182596A1 (en) | 2015-05-11 | 2016-11-17 | Cambou Bertrand F | Memory circuit using dynamic random access memory arrays |
| EP3304561B1 (de) | 2015-06-02 | 2020-08-26 | Cambou, Bertrand, F. | Speicherschaltung mit resistiven direktzugriffspeicherarrays in einem sicheren element |
| US9543013B1 (en) * | 2015-06-05 | 2017-01-10 | University Of South Florida | Magnetic tunnel junction ternary content addressable memory |
| JP2017033616A (ja) * | 2015-07-31 | 2017-02-09 | 株式会社東芝 | 集積回路 |
| US9728259B1 (en) | 2016-03-15 | 2017-08-08 | Qualcomm Technologies, Inc. | Non-volatile (NV)-content addressable memory (CAM) (NV-CAM) cells employing differential magnetic tunnel junction (MTJ) sensing for increased sense margin |
| US11908505B2 (en) * | 2020-01-24 | 2024-02-20 | Taiwan Semiconductor Manufacturing Company, Ltd. | Ferroelectric FET-based content addressable memory |
| EP3886098B1 (de) * | 2020-03-23 | 2024-08-28 | MediaTek Singapore Pte. Ltd. | Gleichzeitiger schreib- und suchvorgang in einem inhaltsadressierbaren speicher |
| US11557328B2 (en) * | 2020-03-23 | 2023-01-17 | Mediatek Singapore Pte. Ltd. | Simultaneous write and search operation in a content addressable memory |
Family Cites Families (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6256222B1 (en) * | 1994-05-02 | 2001-07-03 | Matsushita Electric Industrial Co., Ltd. | Magnetoresistance effect device, and magnetoresistaance effect type head, memory device, and amplifying device using the same |
| US5695864A (en) * | 1995-09-28 | 1997-12-09 | International Business Machines Corporation | Electronic device using magnetic components |
| US6191973B1 (en) * | 1999-09-27 | 2001-02-20 | Motorola Inc. | Mram cam |
| FR2817999B1 (fr) * | 2000-12-07 | 2003-01-10 | Commissariat Energie Atomique | Dispositif magnetique a polarisation de spin et a empilement(s) tri-couche(s) et memoire utilisant ce dispositif |
| US6304477B1 (en) * | 2001-01-31 | 2001-10-16 | Motorola, Inc. | Content addressable magnetic random access memory |
| JP2002334585A (ja) * | 2001-05-02 | 2002-11-22 | Sony Corp | 半導体記憶装置 |
| FR2832542B1 (fr) * | 2001-11-16 | 2005-05-06 | Commissariat Energie Atomique | Dispositif magnetique a jonction tunnel magnetique, memoire et procedes d'ecriture et de lecture utilisant ce dispositif |
| SG115462A1 (en) | 2002-03-12 | 2005-10-28 | Inst Data Storage | Multi-stage per cell magnetoresistive random access memory |
| FR2866750B1 (fr) * | 2004-02-23 | 2006-04-21 | Centre Nat Rech Scient | Memoire magnetique a jonction tunnel magnetique et procede pour son ecriture |
| JP4426876B2 (ja) * | 2004-03-09 | 2010-03-03 | 公秀 松山 | 磁気連想メモリ及び磁気連想メモリからの情報読み出し方法 |
| US7499303B2 (en) * | 2004-09-24 | 2009-03-03 | Integrated Device Technology, Inc. | Binary and ternary non-volatile CAM |
| DE102005063405B4 (de) * | 2005-06-28 | 2010-03-18 | Qimonda Ag | Speicherelement, Speicherausleseelement und Speicherzelle |
| TWI449040B (zh) | 2006-10-06 | 2014-08-11 | Crocus Technology Sa | 用於提供內容可定址的磁阻式隨機存取記憶體單元之系統及方法 |
| JP4435189B2 (ja) * | 2007-02-15 | 2010-03-17 | 株式会社東芝 | 磁気記憶素子及び磁気記憶装置 |
| ATE538474T1 (de) * | 2008-04-07 | 2012-01-15 | Crocus Technology Sa | System und verfahren zum schreiben von daten auf magnetoresistive direktzugriffsspeicherzellen |
| US8023299B1 (en) * | 2009-04-09 | 2011-09-20 | Netlogic Microsystems, Inc. | Content addressable memory device having spin torque transfer memory cells |
-
2009
- 2009-10-30 US US12/609,602 patent/US8228703B2/en active Active
- 2009-11-02 JP JP2009251996A patent/JP5674302B2/ja active Active
- 2009-11-03 AT AT09174930T patent/ATE528764T1/de not_active IP Right Cessation
- 2009-11-03 EP EP09174930A patent/EP2204814B1/de active Active
Also Published As
| Publication number | Publication date |
|---|---|
| EP2204814B1 (de) | 2011-10-12 |
| US8228703B2 (en) | 2012-07-24 |
| EP2204814A1 (de) | 2010-07-07 |
| JP5674302B2 (ja) | 2015-02-25 |
| JP2010113795A (ja) | 2010-05-20 |
| US20100110744A1 (en) | 2010-05-06 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| ATE528764T1 (de) | Magnetoresistive tcam-direktzugriffsspeicherzelle | |
| Kawahara et al. | Spin-transfer torque RAM technology: Review and prospect | |
| US8411495B2 (en) | Spin-transfer torque memory self-reference read method | |
| US8416614B2 (en) | Spin-transfer torque memory non-destructive self-reference read method | |
| US7936580B2 (en) | MRAM diode array and access method | |
| US9178137B2 (en) | Magnetoresistive element and magnetic memory | |
| US8270197B2 (en) | Method of operating information storage device using magnetic domain wall movement | |
| IL200344A0 (en) | Magnetic tunnel junction magnetic memory | |
| WO2008120482A1 (ja) | 磁気ランダムアクセスメモリ | |
| KR100697140B1 (ko) | 자기 랜덤 액세스 메모리 | |
| KR20130093042A (ko) | 고속 자기 랜덤 액세스 메모리-기반 3중 ｃａｍ | |
| ATE545133T1 (de) | Magnetischer speicher mit wärmeunterstütztem schreibverfahren und eingeschränktem schreibfeld | |
| KR20100006888A (ko) | 자기 메모리 소자의 구동 방법 | |
| DE602004008030D1 (de) | Mram-architektur mit einer mit masse verbundenen schreibbitleitung und einer elektrisch isolierten lesebitleitung | |
| KR20090105826A (ko) | 자기 메모리 소자 및 그 정보 쓰기 및 읽기 방법 | |
| TW200737182A (en) | High-bandwidth magnetoresistive random access memory devices and methods of operation thereof | |
| TW200727295A (en) | A structure and method for a magnetic memory device with proximity writing | |
| JP5754531B2 (ja) | 磁気抵抗効果素子及び磁気ランダムアクセスメモリの製造方法 | |
| KR20120110062A (ko) | 터너리 컨텐트 주소화 메모리 어플리케이션에 대한 이중 접합을 갖는 자기 랜덤 액세스 메모리 셀 | |
| WO2003054886A3 (en) | Increased magnetic stability devices suitable for use as sub-micron memories | |
| TW200636744A (en) | Toggle memory burst | |
| KR101311128B1 (ko) | 스핀 전달 토크 자기 랜덤 억세스 메모리 | |
| WO2009044609A1 (ja) | 磁気抵抗記憶素子、磁気抵抗記憶装置及び磁気抵抗記憶装置の動作方法 | |
| CN213877587U (zh) | 存储单元和存储器 | |
| Sharad et al. | Domain-wall shift based multi-level mram for high-speed, high-density and energy-efficient caches |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| RER | Ceased as to paragraph 5 lit. 3 law introducing patent treaties |