ATE528791T1 - Verfahren zur aufdeckung auftretender kristallversetzungen in einem kristallinen element auf germaniumbasis - Google Patents

Verfahren zur aufdeckung auftretender kristallversetzungen in einem kristallinen element auf germaniumbasis

Info

Publication number
ATE528791T1
ATE528791T1 AT10354001T AT10354001T ATE528791T1 AT E528791 T1 ATE528791 T1 AT E528791T1 AT 10354001 T AT10354001 T AT 10354001T AT 10354001 T AT10354001 T AT 10354001T AT E528791 T1 ATE528791 T1 AT E528791T1
Authority
AT
Austria
Prior art keywords
germanium
disposalities
discovering
crystal
occur
Prior art date
Application number
AT10354001T
Other languages
English (en)
Inventor
Loic Sanchez
Chrystel Deguet
Original Assignee
Commissariat Energie Atomique
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat Energie Atomique filed Critical Commissariat Energie Atomique
Application granted granted Critical
Publication of ATE528791T1 publication Critical patent/ATE528791T1/de

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N1/00—Sampling; Preparing specimens for investigation
    • G01N1/28—Preparing specimens for investigation including physical details of (bio-)chemical methods covered elsewhere, e.g. G01N33/50, C12Q
    • G01N1/32—Polishing; Etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/23—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes
    • H10P74/235—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes comprising optical enhancement of defects or not-directly-visible states

Landscapes

  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
AT10354001T 2009-01-16 2010-01-05 Verfahren zur aufdeckung auftretender kristallversetzungen in einem kristallinen element auf germaniumbasis ATE528791T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0900198A FR2941326A1 (fr) 2009-01-16 2009-01-16 Procede de revelation de dislocations emergentes dans un element cristallin a base de germanium

Publications (1)

Publication Number Publication Date
ATE528791T1 true ATE528791T1 (de) 2011-10-15

Family

ID=40937505

Family Applications (1)

Application Number Title Priority Date Filing Date
AT10354001T ATE528791T1 (de) 2009-01-16 2010-01-05 Verfahren zur aufdeckung auftretender kristallversetzungen in einem kristallinen element auf germaniumbasis

Country Status (5)

Country Link
US (1) US8003550B2 (de)
EP (1) EP2209137B1 (de)
JP (1) JP2010166046A (de)
AT (1) ATE528791T1 (de)
FR (1) FR2941326A1 (de)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8585866B2 (en) 2010-07-23 2013-11-19 Oji Holdings Corporation Wire for papermaking of microfibrous cellulose-containing sheet and method for producing microfibrous cellulose-containing sheet
CN110952145A (zh) * 2020-01-03 2020-04-03 云南驰宏国际锗业有限公司 一种改善锗单晶内应力及内部缺微陷的热处理方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6403385B1 (en) * 1998-01-27 2002-06-11 Advanced Micro Devices, Inc. Method of inspecting a semiconductor wafer for defects
FR2867309B1 (fr) * 2004-03-02 2006-06-23 Commissariat Energie Atomique Procede de revelation des dislocations emergentes dans un materiau cristallin
CN100481345C (zh) * 2005-02-24 2009-04-22 硅绝缘体技术有限公司 SiGe层的热氧化及其应用
KR100750932B1 (ko) * 2005-07-31 2007-08-22 삼성전자주식회사 기판 분해 방지막을 사용한 단결정 질화물계 반도체 성장및 이를 이용한 고품위 질화물계 발광소자 제작
JP4743010B2 (ja) * 2005-08-26 2011-08-10 株式会社Ｓｕｍｃｏ シリコンウェーハの表面欠陥評価方法

Also Published As

Publication number Publication date
US20100184303A1 (en) 2010-07-22
JP2010166046A (ja) 2010-07-29
EP2209137B1 (de) 2011-10-12
FR2941326A1 (fr) 2010-07-23
EP2209137A1 (de) 2010-07-21
US8003550B2 (en) 2011-08-23

Similar Documents

Publication Publication Date Title
WO2009152327A3 (en) Post oxidation annealing of low temperature thermal or plasma based oxidation
WO2011068652A3 (en) Oxygen-doping for non-carbon radical-component cvd films
JP2011142309A5 (ja) 半導体装置の作製方法
JP2011523784A5 (de)
US20070166929A1 (en) Method of producing semiconductor wafer
JP2011029637A5 (de)
WO2008105136A1 (ja) シリコン単結晶ウエーハの製造方法
JP2012509581A5 (de)
JP2008532260A5 (de)
WO2006127462A3 (en) Method to increase the compressive stress of pecvd silicon nitride films
EP2857552A3 (de) Verfahren zur Abscheidung von Siliciumnitridfilmen
JP2010123931A5 (ja) Ｓｏｉ基板の作製方法
TW200746354A (en) Multi-step anneal of thin films for film densification and improved gap-fill
WO2016014439A3 (en) Forming enhancement mode iii-nitride devices
JP2014007388A5 (ja) 半導体装置の作製方法
JP2011077514A5 (de)
JP2012004549A5 (ja) 半導体装置
JP2009111373A5 (de)
WO2011084532A3 (en) Dielectric film formation using inert gas excitation
WO2011028349A3 (en) Remote hydrogen plasma source of silicon containing film deposition
JP2016516304A5 (de)
JP2011192958A5 (de)
EP3902039A4 (de) Graphitiertes kohlenstoffsubstrat und gasdiffusionsschicht damit
JP2009212502A5 (de)
SG162717A1 (en) Methods for reducing loading effects during film formation

Legal Events

Date Code Title Description
RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties