ATE528799T1 - Verfahren zum betreiben einer halbleiteranordnung mit graben-gate - Google Patents
Verfahren zum betreiben einer halbleiteranordnung mit graben-gateInfo
- Publication number
- ATE528799T1 ATE528799T1 AT03725542T AT03725542T ATE528799T1 AT E528799 T1 ATE528799 T1 AT E528799T1 AT 03725542 T AT03725542 T AT 03725542T AT 03725542 T AT03725542 T AT 03725542T AT E528799 T1 ATE528799 T1 AT E528799T1
- Authority
- AT
- Austria
- Prior art keywords
- operating
- trench gate
- semiconductor arrangement
- semiconductor
- arrangement
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
- H10D30/66—Vertical DMOS [VDMOS] FETs
- H10D30/668—Vertical DMOS [VDMOS] FETs having trench gate electrodes, e.g. UMOS transistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
- H10D12/01—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
- H10D12/411—Insulated-gate bipolar transistors [IGBT]
- H10D12/441—Vertical IGBTs
- H10D12/461—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions
- H10D12/481—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions having gate structures on slanted surfaces, on vertical surfaces, or in grooves, e.g. trench gate IGBTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/01—Manufacture or treatment
- H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
- H10D30/028—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs
- H10D30/0291—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs
- H10D30/0297—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs using recessing of the gate electrodes, e.g. to form trench gate electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
- H10D30/66—Vertical DMOS [VDMOS] FETs
- H10D30/665—Vertical DMOS [VDMOS] FETs having edge termination structures
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/111—Field plates
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GBGB0212564.9A GB0212564D0 (en) | 2002-05-31 | 2002-05-31 | Trench-gate semiconductor device |
| GBGB0228809.0A GB0228809D0 (en) | 2002-05-31 | 2002-12-11 | Trench-gate semiconductor devices |
| PCT/IB2003/002233 WO2003103056A2 (en) | 2002-05-31 | 2003-05-21 | Trench-gate semiconductor device,corresponding module and apparatus ,and method of operating the device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ATE528799T1 true ATE528799T1 (de) | 2011-10-15 |
Family
ID=9937768
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AT03725542T ATE528799T1 (de) | 2002-05-31 | 2003-05-21 | Verfahren zum betreiben einer halbleiteranordnung mit graben-gate |
Country Status (3)
| Country | Link |
|---|---|
| KR (2) | KR20050006283A (de) |
| AT (1) | ATE528799T1 (de) |
| GB (3) | GB0212564D0 (de) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7442609B2 (en) * | 2004-09-10 | 2008-10-28 | Infineon Technologies Ag | Method of manufacturing a transistor and a method of forming a memory device with isolation trenches |
| US7319256B1 (en) * | 2006-06-19 | 2008-01-15 | Fairchild Semiconductor Corporation | Shielded gate trench FET with the shield and gate electrodes being connected together |
| KR100741919B1 (ko) * | 2006-09-12 | 2007-07-24 | 동부일렉트로닉스 주식회사 | Ｐｎ 접합 게이트 전극을 포함하는 트렌치형 모스트랜지스터 및 그 제조 방법 |
| JP5138274B2 (ja) | 2007-05-25 | 2013-02-06 | 三菱電機株式会社 | 半導体装置 |
| KR101275458B1 (ko) * | 2011-12-26 | 2013-06-17 | 삼성전기주식회사 | 반도체 소자 및 그 제조 방법 |
| DE102016114229B3 (de) | 2016-08-01 | 2017-12-07 | Infineon Technologies Austria Ag | Transistorbauelement mit einer zwei schichten umfassenden feldelektrodeund sein herstellverfahren |
| US11189698B2 (en) * | 2017-12-29 | 2021-11-30 | Suzhou Oriental Semiconductor Co., Ltd | Semiconductor power device |
| US11031478B2 (en) | 2018-01-23 | 2021-06-08 | Infineon Technologies Austria Ag | Semiconductor device having body contacts with dielectric spacers and corresponding methods of manufacture |
-
2002
- 2002-05-31 GB GBGB0212564.9A patent/GB0212564D0/en not_active Ceased
- 2002-12-11 GB GBGB0228809.0A patent/GB0228809D0/en not_active Ceased
-
2003
- 2003-02-12 GB GBGB0303162.2A patent/GB0303162D0/en not_active Ceased
- 2003-05-21 KR KR10-2004-7019300A patent/KR20050006283A/ko not_active Ceased
- 2003-05-21 AT AT03725542T patent/ATE528799T1/de not_active IP Right Cessation
- 2003-05-21 KR KR10-2004-7019310A patent/KR20040111710A/ko not_active Ceased
Also Published As
| Publication number | Publication date |
|---|---|
| GB0212564D0 (en) | 2002-07-10 |
| KR20040111710A (ko) | 2004-12-31 |
| GB0303162D0 (en) | 2003-03-19 |
| KR20050006283A (ko) | 2005-01-15 |
| GB0228809D0 (en) | 2003-01-15 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| RER | Ceased as to paragraph 5 lit. 3 law introducing patent treaties |