ATE529489T1 - Polierzusammensetzung und polierverfahren - Google Patents

Polierzusammensetzung und polierverfahren

Info

Publication number
ATE529489T1
ATE529489T1 AT05822456T AT05822456T ATE529489T1 AT E529489 T1 ATE529489 T1 AT E529489T1 AT 05822456 T AT05822456 T AT 05822456T AT 05822456 T AT05822456 T AT 05822456T AT E529489 T1 ATE529489 T1 AT E529489T1
Authority
AT
Austria
Prior art keywords
polishing
polishing composition
chemical
mechanical polishing
present
Prior art date
Application number
AT05822456T
Other languages
English (en)
Inventor
Ayako Nishioka
Yuji Itoh
Yoshitomo Shimazu
Original Assignee
Showa Denko Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Showa Denko Kk filed Critical Showa Denko Kk
Application granted granted Critical
Publication of ATE529489T1 publication Critical patent/ATE529489T1/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/403—Chemomechanical polishing [CMP] of conductive or resistive materials

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
AT05822456T 2004-12-22 2005-12-22 Polierzusammensetzung und polierverfahren ATE529489T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2004372101 2004-12-22
PCT/JP2005/024190 WO2006068328A1 (en) 2004-12-22 2005-12-22 Polishing composition and polishing method

Publications (1)

Publication Number Publication Date
ATE529489T1 true ATE529489T1 (de) 2011-11-15

Family

ID=38325749

Family Applications (1)

Application Number Title Priority Date Filing Date
AT05822456T ATE529489T1 (de) 2004-12-22 2005-12-22 Polierzusammensetzung und polierverfahren

Country Status (5)

Country Link
US (1) US7901474B2 (de)
EP (1) EP1828333B1 (de)
JP (1) JP2006203188A (de)
AT (1) ATE529489T1 (de)
WO (1) WO2006068328A1 (de)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5147185B2 (ja) * 2005-01-24 2013-02-20 昭和電工株式会社 研磨組成物及び研磨方法
JP2008053371A (ja) * 2006-08-23 2008-03-06 Fujifilm Corp 半導体デバイスの研磨方法
CN101143996A (zh) * 2006-09-15 2008-03-19 安集微电子（上海）有限公司 用于抛光多晶硅的化学机械抛光液
TWI408216B (zh) * 2007-03-07 2013-09-11 Anji Microelectronics Co Ltd Application of Polishing Solution in Adjusting Polysilicon / Silica Selectivity Ratio
US8047899B2 (en) * 2007-07-26 2011-11-01 Macronix International Co., Ltd. Pad and method for chemical mechanical polishing
JP5877940B2 (ja) * 2010-04-08 2016-03-08 株式会社フジミインコーポレーテッド 銅及びシリコンが表面に露出したウェーハの研磨方法
TWI605112B (zh) * 2011-02-21 2017-11-11 福吉米股份有限公司 研磨用組成物
JP5833435B2 (ja) * 2011-12-28 2015-12-16 花王株式会社 シリコンウエハ用研磨液組成物

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5391258A (en) 1993-05-26 1995-02-21 Rodel, Inc. Compositions and methods for polishing
JP3397501B2 (ja) 1994-07-12 2003-04-14 株式会社東芝 研磨剤および研磨方法
US5920500A (en) 1996-08-23 1999-07-06 Motorola, Inc. Magnetic random access memory having stacked memory cells and fabrication method therefor
JP4092021B2 (ja) * 1998-10-02 2008-05-28 花王株式会社 研磨液組成物
JP2000252244A (ja) * 1998-12-28 2000-09-14 Hitachi Chem Co Ltd 金属用研磨液及びそれを用いた研磨方法
JP4657408B2 (ja) * 1999-10-13 2011-03-23 株式会社トクヤマ 金属膜用研磨剤
JP2001115146A (ja) 1999-10-18 2001-04-24 Tokuyama Corp バリア膜用研磨剤
JP4231950B2 (ja) * 1999-10-18 2009-03-04 株式会社トクヤマ 金属膜用研磨剤
JP3450247B2 (ja) 1999-12-28 2003-09-22 Ｎｅｃエレクトロニクス株式会社 金属配線形成方法
JP3736249B2 (ja) 2000-01-12 2006-01-18 Ｊｓｒ株式会社 半導体装置の製造に用いる化学機械研磨用水系分散体
TW572980B (en) 2000-01-12 2004-01-21 Jsr Corp Aqueous dispersion for chemical mechanical polishing and chemical mechanical polishing process
US6569215B2 (en) * 2000-04-17 2003-05-27 Showa Denko Kabushiki Kaisha Composition for polishing magnetic disk substrate
JP2002170790A (ja) * 2000-11-30 2002-06-14 Showa Denko Kk 半導体基板研磨用組成物、半導体配線基板およびその製造方法
JP2002249762A (ja) * 2001-02-27 2002-09-06 Sanyo Chem Ind Ltd 研磨材用添加剤
SG144688A1 (en) * 2001-07-23 2008-08-28 Fujimi Inc Polishing composition and polishing method employing it
JP2002176015A (ja) * 2001-10-15 2002-06-21 Hitachi Chem Co Ltd 金属用研磨液及び研磨方法
US7097541B2 (en) 2002-01-22 2006-08-29 Cabot Microelectronics Corporation CMP method for noble metals
JP2004128475A (ja) * 2002-08-02 2004-04-22 Jsr Corp 化学機械研磨用水系分散体および半導体装置の製造方法
JP4202157B2 (ja) * 2003-02-28 2008-12-24 株式会社フジミインコーポレーテッド 研磨用組成物
JP5147185B2 (ja) 2005-01-24 2013-02-20 昭和電工株式会社 研磨組成物及び研磨方法

Also Published As

Publication number Publication date
EP1828333B1 (de) 2011-10-19
US20080138990A1 (en) 2008-06-12
WO2006068328A1 (en) 2006-06-29
JP2006203188A (ja) 2006-08-03
US7901474B2 (en) 2011-03-08
EP1828333A1 (de) 2007-09-05

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Legal Events

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