ATE529903T1 - Phasenwechselspeicher mit verringertem stromverbrauch und herstellungsverfahren dafür - Google Patents

Phasenwechselspeicher mit verringertem stromverbrauch und herstellungsverfahren dafür

Info

Publication number
ATE529903T1
ATE529903T1 AT07752977T AT07752977T ATE529903T1 AT E529903 T1 ATE529903 T1 AT E529903T1 AT 07752977 T AT07752977 T AT 07752977T AT 07752977 T AT07752977 T AT 07752977T AT E529903 T1 ATE529903 T1 AT E529903T1
Authority
AT
Austria
Prior art keywords
power consumption
reduced power
phase
production method
changing storage
Prior art date
Application number
AT07752977T
Other languages
English (en)
Inventor
Jun Liu
Original Assignee
Micron Technology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Micron Technology Inc filed Critical Micron Technology Inc
Application granted granted Critical
Publication of ATE529903T1 publication Critical patent/ATE529903T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0004—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising amorphous/crystalline phase transition cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/041—Modification of switching materials after formation, e.g. doping
    • H10N70/043—Modification of switching materials after formation, e.g. doping by implantation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • H10N70/8825—Selenides, e.g. GeSe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • H10N70/8828—Tellurides, e.g. GeSbTe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/884—Switching materials based on at least one element of group IIIA, IVA or VA, e.g. elemental or compound semiconductors

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Semiconductor Memories (AREA)
  • Secondary Cells (AREA)
AT07752977T 2006-03-17 2007-03-14 Phasenwechselspeicher mit verringertem stromverbrauch und herstellungsverfahren dafür ATE529903T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/377,664 US7723712B2 (en) 2006-03-17 2006-03-17 Reduced power consumption phase change memory and methods for forming the same
PCT/US2007/006316 WO2007109021A1 (en) 2006-03-17 2007-03-14 Reduced power consumption phase change memory and methods for forming the same

Publications (1)

Publication Number Publication Date
ATE529903T1 true ATE529903T1 (de) 2011-11-15

Family

ID=38232247

Family Applications (1)

Application Number Title Priority Date Filing Date
AT07752977T ATE529903T1 (de) 2006-03-17 2007-03-14 Phasenwechselspeicher mit verringertem stromverbrauch und herstellungsverfahren dafür

Country Status (7)

Country Link
US (2) US7723712B2 (de)
EP (2) EP2383811B9 (de)
JP (1) JP5110401B2 (de)
KR (1) KR101051520B1 (de)
CN (1) CN101405883B (de)
AT (1) ATE529903T1 (de)
WO (1) WO2007109021A1 (de)

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US20090072218A1 (en) * 2007-09-18 2009-03-19 Semyon Savransky Higher threshold voltage phase change memory
US7852658B2 (en) * 2008-03-14 2010-12-14 Micron Technology, Inc. Phase change memory cell with constriction structure
KR101604041B1 (ko) * 2009-08-27 2016-03-16 삼성전자주식회사 상변화 물질을 포함하는 비휘발성 메모리 소자
US8467239B2 (en) 2010-12-02 2013-06-18 Intel Corporation Reversible low-energy data storage in phase change memory
CN102637821B (zh) * 2011-02-12 2014-04-02 中芯国际集成电路制造(上海)有限公司 一种相变存储单元及其形成方法
US8971089B2 (en) 2012-06-27 2015-03-03 Intel Corporation Low power phase change memory cell
CN105247677B (zh) * 2014-04-30 2018-03-09 华为技术有限公司 相变存储器
US20160181515A1 (en) * 2014-12-18 2016-06-23 Stmicroelectronics S.R.I. Embedded phase change memory devices and related methods
US9564585B1 (en) * 2015-09-03 2017-02-07 HGST Netherlands B.V. Multi-level phase change device
CN110729400B (zh) * 2019-09-03 2021-02-23 华中科技大学 Ti-Ga-Sb相变材料、相变存储器及Ti-Ga-Sb相变材料的制备方法
US11621394B2 (en) * 2020-12-29 2023-04-04 International Business Machines Corporation Multi-layer phase change memory device
CN112786784B (zh) * 2021-01-18 2022-11-01 长江先进存储产业创新中心有限责任公司 相变存储装置及其制作方法
CN115101667B (zh) * 2021-09-13 2024-10-22 华为技术有限公司 一种相变存储单元及相变存储器
US12219885B2 (en) 2021-11-19 2025-02-04 International Business Machines Corporation Reducing contact resistance of phase change memory bridge cell

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US5405769A (en) * 1993-04-08 1995-04-11 National Research Council Of Canada Construction of thermostable mutants of a low molecular mass xylanase
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Also Published As

Publication number Publication date
US20070221905A1 (en) 2007-09-27
EP2383811A2 (de) 2011-11-02
EP2383811B1 (de) 2013-11-13
WO2007109021A1 (en) 2007-09-27
CN101405883B (zh) 2012-01-18
EP2002491B1 (de) 2011-10-19
CN101405883A (zh) 2009-04-08
KR20080114793A (ko) 2008-12-31
JP2009530817A (ja) 2009-08-27
KR101051520B1 (ko) 2011-07-22
US8173988B2 (en) 2012-05-08
US7723712B2 (en) 2010-05-25
US20100193759A1 (en) 2010-08-05
EP2002491A1 (de) 2008-12-17
EP2383811A3 (de) 2012-07-11
JP5110401B2 (ja) 2012-12-26
EP2383811B9 (de) 2014-06-11

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