ATE532182T1 - Erfassung von lesedaten in einem synchrondatenspeicher - Google Patents

Erfassung von lesedaten in einem synchrondatenspeicher

Info

Publication number
ATE532182T1
ATE532182T1 AT07719712T AT07719712T ATE532182T1 AT E532182 T1 ATE532182 T1 AT E532182T1 AT 07719712 T AT07719712 T AT 07719712T AT 07719712 T AT07719712 T AT 07719712T AT E532182 T1 ATE532182 T1 AT E532182T1
Authority
AT
Austria
Prior art keywords
dqs
timing
counter
sample
issued
Prior art date
Application number
AT07719712T
Other languages
English (en)
Inventor
Peter Gillingham
Robert Mckenzie
Original Assignee
Mosaid Technologies Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=38845061&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=ATE532182(T1) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Mosaid Technologies Inc filed Critical Mosaid Technologies Inc
Application granted granted Critical
Publication of ATE532182T1 publication Critical patent/ATE532182T1/de

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F13/00—Interconnection of, or transfer of information or other signals between, memories, input/output devices or central processing units
    • G06F13/38—Information transfer, e.g. on bus
    • G06F13/42—Bus transfer protocol, e.g. handshake; Synchronisation
    • G06F13/4204—Bus transfer protocol, e.g. handshake; Synchronisation on a parallel bus
    • G06F13/4234—Bus transfer protocol, e.g. handshake; Synchronisation on a parallel bus being a memory bus
    • G06F13/4243—Bus transfer protocol, e.g. handshake; Synchronisation on a parallel bus being a memory bus with synchronous protocol
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/4076—Timing circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/50—Marginal testing, e.g. race, voltage or current testing
    • G11C29/50012—Marginal testing, e.g. race, voltage or current testing of timing
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1051—Data output circuits, e.g. read-out amplifiers, data output buffers, data output registers, data output level conversion circuits
    • G11C7/1066—Output synchronization
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2207/00—Indexing scheme relating to arrangements for writing information into, or reading information out from, a digital store
    • G11C2207/22—Control and timing of internal memory operations
    • G11C2207/2254—Calibration

Landscapes

  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Dram (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)
  • Memory System (AREA)
AT07719712T 2006-06-30 2007-05-07 Erfassung von lesedaten in einem synchrondatenspeicher ATE532182T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/477,659 US7685393B2 (en) 2006-06-30 2006-06-30 Synchronous memory read data capture
PCT/CA2007/000787 WO2008000059A1 (en) 2006-06-30 2007-05-07 Synchronous memory read data capture

Publications (1)

Publication Number Publication Date
ATE532182T1 true ATE532182T1 (de) 2011-11-15

Family

ID=38845061

Family Applications (1)

Application Number Title Priority Date Filing Date
AT07719712T ATE532182T1 (de) 2006-06-30 2007-05-07 Erfassung von lesedaten in einem synchrondatenspeicher

Country Status (8)

Country Link
US (3) US7685393B2 (de)
EP (1) EP2036090B1 (de)
JP (2) JP5657888B2 (de)
KR (1) KR101374417B1 (de)
CN (1) CN101479802B (de)
AT (1) ATE532182T1 (de)
TW (1) TWI453754B (de)
WO (1) WO2008000059A1 (de)

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US20110016282A1 (en) 2011-01-20
US7685393B2 (en) 2010-03-23
KR20090035508A (ko) 2009-04-09
WO2008000059A1 (en) 2008-01-03
KR101374417B1 (ko) 2014-03-17
JP5241780B2 (ja) 2013-07-17
EP2036090A4 (de) 2009-08-12
CN101479802B (zh) 2011-12-28
TW200805392A (en) 2008-01-16
US20080005518A1 (en) 2008-01-03
JP2009541868A (ja) 2009-11-26
JP2010250859A (ja) 2010-11-04
EP2036090B1 (de) 2011-11-02
US8086813B2 (en) 2011-12-27
CN101479802A (zh) 2009-07-08
JP5657888B2 (ja) 2015-01-21
USRE46819E1 (en) 2018-05-01
TWI453754B (zh) 2014-09-21
EP2036090A1 (de) 2009-03-18

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