ATE533872T1 - Verfahren und vorrichtung zum aufbringen eines überzugs auf ein substrat - Google Patents

Verfahren und vorrichtung zum aufbringen eines überzugs auf ein substrat

Info

Publication number
ATE533872T1
ATE533872T1 AT04774873T AT04774873T ATE533872T1 AT E533872 T1 ATE533872 T1 AT E533872T1 AT 04774873 T AT04774873 T AT 04774873T AT 04774873 T AT04774873 T AT 04774873T AT E533872 T1 ATE533872 T1 AT E533872T1
Authority
AT
Austria
Prior art keywords
substrate
coating
sources
expanding
plasma
Prior art date
Application number
AT04774873T
Other languages
English (en)
Inventor
Martin Bijker
Roland Bosch
Franciscus Dings
Original Assignee
Otb Solar Bv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Otb Solar Bv filed Critical Otb Solar Bv
Application granted granted Critical
Publication of ATE533872T1 publication Critical patent/ATE533872T1/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/513—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using plasma jets
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C4/00—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
    • C23C4/12—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge characterised by the method of spraying
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C4/00—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
    • C23C4/12—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge characterised by the method of spraying
    • C23C4/134—Plasma spraying

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Vapour Deposition (AREA)
  • Plasma Technology (AREA)
  • Physical Vapour Deposition (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
AT04774873T 2003-08-13 2004-08-12 Verfahren und vorrichtung zum aufbringen eines überzugs auf ein substrat ATE533872T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
NL1024101A NL1024101C2 (nl) 2003-08-13 2003-08-13 Werkwijze en een inrichting voor het aanbrengen van een coating op een substraat.
PCT/NL2004/000566 WO2005017228A1 (en) 2003-08-13 2004-08-12 Method and an apparatus for applying a coating on a substrate

Publications (1)

Publication Number Publication Date
ATE533872T1 true ATE533872T1 (de) 2011-12-15

Family

ID=34192299

Family Applications (1)

Application Number Title Priority Date Filing Date
AT04774873T ATE533872T1 (de) 2003-08-13 2004-08-12 Verfahren und vorrichtung zum aufbringen eines überzugs auf ein substrat

Country Status (9)

Country Link
US (1) US20070269612A1 (de)
EP (1) EP1664377B1 (de)
JP (1) JP4795236B2 (de)
KR (1) KR20060113885A (de)
CN (1) CN100587109C (de)
AT (1) ATE533872T1 (de)
NL (1) NL1024101C2 (de)
TW (1) TWI364464B (de)
WO (1) WO2005017228A1 (de)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL2003514C2 (en) * 2009-09-18 2011-03-21 Otb Solar Bv Thin film deposition apparatus and method for the same.
US9840778B2 (en) 2012-06-01 2017-12-12 Taiwan Semiconductor Manufacturing Company, Ltd. Plasma chamber having an upper electrode having controllable valves and a method of using the same
US9643877B2 (en) * 2013-12-23 2017-05-09 MHI Health Devices, LLC. Thermal plasma treatment method
US9480140B2 (en) * 2014-11-21 2016-10-25 Applied Materials, Inc. Material modification by neutral beam source with selected collision angle
US10550469B2 (en) * 2015-09-04 2020-02-04 Lam Research Corporation Plasma excitation for spatial atomic layer deposition (ALD) reactors
GB2588932B (en) * 2019-11-15 2022-08-24 Dyson Technology Ltd Method and apparatus for sputter deposition of target material to a substrate

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5356673A (en) * 1991-03-18 1994-10-18 Jet Process Corporation Evaporation system and method for gas jet deposition of thin film materials
DE19610015C2 (de) * 1996-03-14 1999-12-02 Hoechst Ag Thermisches Auftragsverfahren für dünne keramische Schichten und Vorrichtung zum Auftragen
JPH11505292A (ja) * 1995-03-17 1999-05-18 ヘキスト・アクチェンゲゼルシャフト セラミックの薄層を溶着させる熱溶着法および関連装置
KR100201386B1 (ko) * 1995-10-28 1999-06-15 구본준 화학기상증착장비의 반응가스 분사장치
US6140773A (en) * 1996-09-10 2000-10-31 The Regents Of The University Of California Automated control of linear constricted plasma source array
DE19643865C2 (de) * 1996-10-30 1999-04-08 Schott Glas Plasmaunterstütztes chemisches Abscheidungsverfahren (CVD) mit entfernter Anregung eines Anregungsgases (Remote-Plasma-CVD-Verfahren) zur Beschichtung oder zur Behandlung großflächiger Substrate und Vorrichtung zur Durchführung desselben
CA2277394C (en) * 1998-09-09 2003-10-21 Saint-Gobain Industrial Ceramics, Inc. Plasma jet chemical vapor deposition system having a plurality of distribution heads
US6397776B1 (en) * 2001-06-11 2002-06-04 General Electric Company Apparatus for large area chemical vapor deposition using multiple expanding thermal plasma generators
US6681716B2 (en) * 2001-11-27 2004-01-27 General Electric Company Apparatus and method for depositing large area coatings on non-planar surfaces
DE10202311B4 (de) * 2002-01-23 2007-01-04 Schott Ag Vorrichtung und Verfahren zur Plasmabehandlung von dielektrischen Körpern

Also Published As

Publication number Publication date
JP4795236B2 (ja) 2011-10-19
TW200526807A (en) 2005-08-16
CN100587109C (zh) 2010-02-03
CN1836060A (zh) 2006-09-20
TWI364464B (en) 2012-05-21
WO2005017228A1 (en) 2005-02-24
NL1024101C2 (nl) 2005-02-15
US20070269612A1 (en) 2007-11-22
EP1664377B1 (de) 2011-11-16
EP1664377A1 (de) 2006-06-07
JP2007502362A (ja) 2007-02-08
KR20060113885A (ko) 2006-11-03

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