ATE534076T1 - Speichersystem - Google Patents

Speichersystem

Info

Publication number
ATE534076T1
ATE534076T1 AT09000724T AT09000724T ATE534076T1 AT E534076 T1 ATE534076 T1 AT E534076T1 AT 09000724 T AT09000724 T AT 09000724T AT 09000724 T AT09000724 T AT 09000724T AT E534076 T1 ATE534076 T1 AT E534076T1
Authority
AT
Austria
Prior art keywords
storage
flash memory
area
storage area
unwritable
Prior art date
Application number
AT09000724T
Other languages
English (en)
Inventor
Sadahiro Sugimoto
Akira Yamamoto
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Application granted granted Critical
Publication of ATE534076T1 publication Critical patent/ATE534076T1/de

Links

Classifications

    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F11/00—Error detection; Error correction; Monitoring
    • G06F11/07—Responding to the occurrence of a fault, e.g. fault tolerance
    • G06F11/0703—Error or fault processing not based on redundancy, i.e. by taking additional measures to deal with the error or fault not making use of redundancy in operation, in hardware, or in data representation
    • G06F11/0793—Remedial or corrective actions
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/349—Arrangements for evaluating degradation, retention or wearout, e.g. by counting erase cycles
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/70—Masking faults in memories by using spares or by reconfiguring
    • G11C29/78—Masking faults in memories by using spares or by reconfiguring using programmable devices
    • G11C29/80—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved layout
    • G11C29/816—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved layout for an application-specific layout
    • G11C29/82—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved layout for an application-specific layout for EEPROMs

Landscapes

  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Quality & Reliability (AREA)
  • Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)
AT09000724T 2008-04-25 2009-01-20 Speichersystem ATE534076T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2008114773 2008-04-25

Publications (1)

Publication Number Publication Date
ATE534076T1 true ATE534076T1 (de) 2011-12-15

Family

ID=40934171

Family Applications (1)

Application Number Title Priority Date Filing Date
AT09000724T ATE534076T1 (de) 2008-04-25 2009-01-20 Speichersystem

Country Status (5)

Country Link
US (2) US20090271564A1 (de)
EP (1) EP2112598B1 (de)
JP (1) JPWO2009130848A1 (de)
AT (1) ATE534076T1 (de)
WO (1) WO2009130848A1 (de)

Families Citing this family (80)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8365040B2 (en) 2007-09-20 2013-01-29 Densbits Technologies Ltd. Systems and methods for handling immediate data errors in flash memory
US8694715B2 (en) 2007-10-22 2014-04-08 Densbits Technologies Ltd. Methods for adaptively programming flash memory devices and flash memory systems incorporating same
US8341335B2 (en) 2007-12-05 2012-12-25 Densbits Technologies Ltd. Flash memory apparatus with a heating system for temporarily retired memory portions
WO2009074978A2 (en) 2007-12-12 2009-06-18 Densbits Technologies Ltd. Systems and methods for error correction and decoding on multi-level physical media
WO2009118720A2 (en) 2008-03-25 2009-10-01 Densbits Technologies Ltd. Apparatus and methods for hardware-efficient unbiased rounding
JP2010015195A (ja) * 2008-06-30 2010-01-21 Toshiba Corp 記憶制御装置及び記憶制御方法
US8732388B2 (en) 2008-09-16 2014-05-20 Micron Technology, Inc. Embedded mapping information for memory devices
US8819385B2 (en) 2009-04-06 2014-08-26 Densbits Technologies Ltd. Device and method for managing a flash memory
US8458574B2 (en) 2009-04-06 2013-06-04 Densbits Technologies Ltd. Compact chien-search based decoding apparatus and method
US9330767B1 (en) 2009-08-26 2016-05-03 Avago Technologies General Ip (Singapore) Pte. Ltd. Flash memory module and method for programming a page of flash memory cells
US8995197B1 (en) 2009-08-26 2015-03-31 Densbits Technologies Ltd. System and methods for dynamic erase and program control for flash memory device memories
US8730729B2 (en) 2009-10-15 2014-05-20 Densbits Technologies Ltd. Systems and methods for averaging error rates in non-volatile devices and storage systems
US8724387B2 (en) 2009-10-22 2014-05-13 Densbits Technologies Ltd. Method, system, and computer readable medium for reading and programming flash memory cells using multiple bias voltages
US9037777B2 (en) 2009-12-22 2015-05-19 Densbits Technologies Ltd. Device, system, and method for reducing program/read disturb in flash arrays
JP5331018B2 (ja) * 2010-01-22 2013-10-30 株式会社日立製作所 ソリッド・ステート・ドライブ装置およびミラー構成再構成方法
JP2011170589A (ja) * 2010-02-18 2011-09-01 Nec Corp ストレージ制御装置、ストレージ装置およびストレージ制御方法
JP4987997B2 (ja) * 2010-02-26 2012-08-01 株式会社東芝 メモリシステム
US8745317B2 (en) 2010-04-07 2014-06-03 Densbits Technologies Ltd. System and method for storing information in a multi-level cell memory
US9021177B2 (en) * 2010-04-29 2015-04-28 Densbits Technologies Ltd. System and method for allocating and using spare blocks in a flash memory
US8621321B2 (en) 2010-07-01 2013-12-31 Densbits Technologies Ltd. System and method for multi-dimensional encoding and decoding
US8964464B2 (en) 2010-08-24 2015-02-24 Densbits Technologies Ltd. System and method for accelerated sampling
US9063878B2 (en) 2010-11-03 2015-06-23 Densbits Technologies Ltd. Method, system and computer readable medium for copy back
US8850100B2 (en) 2010-12-07 2014-09-30 Densbits Technologies Ltd. Interleaving codeword portions between multiple planes and/or dies of a flash memory device
US8429127B2 (en) 2010-12-09 2013-04-23 International Business Machines Corporation Circumventing queue downtime in a queue damage scenario
US8990665B1 (en) 2011-04-06 2015-03-24 Densbits Technologies Ltd. System, method and computer program product for joint search of a read threshold and soft decoding
US9110785B1 (en) 2011-05-12 2015-08-18 Densbits Technologies Ltd. Ordered merge of data sectors that belong to memory space portions
US9195592B1 (en) 2011-05-12 2015-11-24 Densbits Technologies Ltd. Advanced management of a non-volatile memory
US9372792B1 (en) 2011-05-12 2016-06-21 Avago Technologies General Ip (Singapore) Pte. Ltd. Advanced management of a non-volatile memory
US9396106B2 (en) 2011-05-12 2016-07-19 Avago Technologies General Ip (Singapore) Pte. Ltd. Advanced management of a non-volatile memory
US8996790B1 (en) 2011-05-12 2015-03-31 Densbits Technologies Ltd. System and method for flash memory management
US9501392B1 (en) 2011-05-12 2016-11-22 Avago Technologies General Ip (Singapore) Pte. Ltd. Management of a non-volatile memory module
WO2013038442A1 (en) * 2011-09-13 2013-03-21 Hitachi, Ltd. Storage system comprising flash memory, and storage control method
US8996788B2 (en) 2012-02-09 2015-03-31 Densbits Technologies Ltd. Configurable flash interface
US8947941B2 (en) 2012-02-09 2015-02-03 Densbits Technologies Ltd. State responsive operations relating to flash memory cells
US8996793B1 (en) 2012-04-24 2015-03-31 Densbits Technologies Ltd. System, method and computer readable medium for generating soft information
US8838937B1 (en) 2012-05-23 2014-09-16 Densbits Technologies Ltd. Methods, systems and computer readable medium for writing and reading data
US8879325B1 (en) 2012-05-30 2014-11-04 Densbits Technologies Ltd. System, method and computer program product for processing read threshold information and for reading a flash memory module
US9921954B1 (en) 2012-08-27 2018-03-20 Avago Technologies General Ip (Singapore) Pte. Ltd. Method and system for split flash memory management between host and storage controller
US9201784B2 (en) * 2012-09-07 2015-12-01 Kabushiki Kaisha Toshiba Semiconductor storage device and method for controlling nonvolatile semiconductor memory
US9183091B2 (en) 2012-09-27 2015-11-10 Intel Corporation Configuration information backup in memory systems
US9368225B1 (en) 2012-11-21 2016-06-14 Avago Technologies General Ip (Singapore) Pte. Ltd. Determining read thresholds based upon read error direction statistics
US9069659B1 (en) 2013-01-03 2015-06-30 Densbits Technologies Ltd. Read threshold determination using reference read threshold
JP5586712B2 (ja) * 2013-01-16 2014-09-10 株式会社東芝 ディスクアレイ制御装置およびディスクアレイ装置
JP6055544B2 (ja) * 2013-06-03 2016-12-27 株式会社日立製作所 ストレージ装置およびストレージ装置制御方法
US9136876B1 (en) 2013-06-13 2015-09-15 Densbits Technologies Ltd. Size limited multi-dimensional decoding
US9430492B1 (en) * 2013-06-28 2016-08-30 Emc Corporation Efficient scavenging of data and metadata file system blocks
US9413491B1 (en) 2013-10-08 2016-08-09 Avago Technologies General Ip (Singapore) Pte. Ltd. System and method for multiple dimension decoding and encoding a message
US9786388B1 (en) 2013-10-09 2017-10-10 Avago Technologies General Ip (Singapore) Pte. Ltd. Detecting and managing bad columns
US9348694B1 (en) 2013-10-09 2016-05-24 Avago Technologies General Ip (Singapore) Pte. Ltd. Detecting and managing bad columns
US9397706B1 (en) 2013-10-09 2016-07-19 Avago Technologies General Ip (Singapore) Pte. Ltd. System and method for irregular multiple dimension decoding and encoding
US9536612B1 (en) 2014-01-23 2017-01-03 Avago Technologies General Ip (Singapore) Pte. Ltd Digital signaling processing for three dimensional flash memory arrays
US9946616B2 (en) * 2014-01-29 2018-04-17 Hitachi, Ltd. Storage apparatus
US10120792B1 (en) 2014-01-29 2018-11-06 Avago Technologies General Ip (Singapore) Pte. Ltd. Programming an embedded flash storage device
US9471428B2 (en) 2014-05-06 2016-10-18 International Business Machines Corporation Using spare capacity in solid state drives
US9542262B1 (en) 2014-05-29 2017-01-10 Avago Technologies General Ip (Singapore) Pte. Ltd. Error correction
US9471451B2 (en) 2014-06-18 2016-10-18 International Business Machines Corporation Implementing enhanced wear leveling in 3D flash memories
US9892033B1 (en) 2014-06-24 2018-02-13 Avago Technologies General Ip (Singapore) Pte. Ltd. Management of memory units
US9584159B1 (en) 2014-07-03 2017-02-28 Avago Technologies General Ip (Singapore) Pte. Ltd. Interleaved encoding
US9972393B1 (en) 2014-07-03 2018-05-15 Avago Technologies General Ip (Singapore) Pte. Ltd. Accelerating programming of a flash memory module
US9449702B1 (en) 2014-07-08 2016-09-20 Avago Technologies General Ip (Singapore) Pte. Ltd. Power management
US9524211B1 (en) 2014-11-18 2016-12-20 Avago Technologies General Ip (Singapore) Pte. Ltd. Codeword management
US10305515B1 (en) 2015-02-02 2019-05-28 Avago Technologies International Sales Pte. Limited System and method for encoding using multiple linear feedback shift registers
US9921910B2 (en) 2015-02-19 2018-03-20 Netapp, Inc. Virtual chunk service based data recovery in a distributed data storage system
US10725865B2 (en) 2015-02-25 2020-07-28 Hitachi Ltd. Storage unit and storage device
KR102365269B1 (ko) 2015-04-13 2022-02-22 삼성전자주식회사 데이터 스토리지 및 그것의 동작 방법
US10459639B2 (en) 2015-04-28 2019-10-29 Hitachi, Ltd. Storage unit and storage system that suppress performance degradation of the storage unit
US10152413B2 (en) 2015-06-08 2018-12-11 Samsung Electronics Co. Ltd. Nonvolatile memory module and operation method thereof
US10628255B1 (en) 2015-06-11 2020-04-21 Avago Technologies International Sales Pte. Limited Multi-dimensional decoding
US9851921B1 (en) 2015-07-05 2017-12-26 Avago Technologies General Ip (Singapore) Pte. Ltd. Flash memory chip processing
US10078448B2 (en) 2015-07-08 2018-09-18 Samsung Electronics Co., Ltd. Electronic devices and memory management methods thereof
US9954558B1 (en) 2016-03-03 2018-04-24 Avago Technologies General Ip (Singapore) Pte. Ltd. Fast decoding of data stored in a flash memory
WO2017175285A1 (ja) * 2016-04-05 2017-10-12 株式会社日立製作所 計算機システム、物理記憶デバイスの制御方法、および記録媒体
US20180113616A1 (en) * 2016-10-21 2018-04-26 Nec Corporation Disk array control device, disk array device, disk array control method, and recording medium
US10090067B1 (en) * 2017-05-30 2018-10-02 Seagate Technology Llc Data storage device with rewritable in-place memory
US11592991B2 (en) 2017-09-07 2023-02-28 Pure Storage, Inc. Converting raid data between persistent storage types
US11593036B2 (en) 2017-06-12 2023-02-28 Pure Storage, Inc. Staging data within a unified storage element
US10417092B2 (en) * 2017-09-07 2019-09-17 Pure Storage, Inc. Incremental RAID stripe update parity calculation
WO2018231350A1 (en) 2017-06-12 2018-12-20 Pure Storage, Inc. Accessible fast durable storage integrated into a bulk storage device
US11609718B1 (en) 2017-06-12 2023-03-21 Pure Storage, Inc. Identifying valid data after a storage system recovery
US10795604B2 (en) * 2018-07-23 2020-10-06 Western Digital Technologies, Inc. Reporting available physical storage space of non-volatile memory array

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6347051B2 (en) * 1991-11-26 2002-02-12 Hitachi, Ltd. Storage device employing a flash memory
JP3231832B2 (ja) 1991-11-26 2001-11-26 株式会社日立製作所 フラッシュメモリを記憶媒体とした半導体ディスク
JPH05150913A (ja) * 1991-11-29 1993-06-18 Hitachi Ltd フラツシユメモリを記憶媒体としたシリコンデイスク
JP3178909B2 (ja) * 1992-01-10 2001-06-25 株式会社東芝 半導体メモリ装置
US5867641A (en) * 1995-10-27 1999-02-02 Scm Microsystems (U.S.) Inc. Flash translation layer cleanup system and method
JP3557511B2 (ja) * 1997-08-27 2004-08-25 沖電気工業株式会社 半導体ディスク装置の寿命算出方法
JP3734620B2 (ja) * 1998-06-24 2006-01-11 沖電気工業株式会社 半導体ディスク装置
US6505305B1 (en) * 1998-07-16 2003-01-07 Compaq Information Technologies Group, L.P. Fail-over of multiple memory blocks in multiple memory modules in computer system
JP2003085054A (ja) * 2001-06-27 2003-03-20 Mitsubishi Electric Corp フラッシュメモリを搭載した半導体記憶装置における装置寿命警告発生システムとその方法
JP4113352B2 (ja) * 2001-10-31 2008-07-09 株式会社日立製作所 ストレージ・ネットワークにおけるストレージ・リソース運用管理方法
JP4429703B2 (ja) * 2003-11-28 2010-03-10 株式会社日立製作所 ディスクアレイ装置及びディスクアレイ装置の制御方法
US20080082736A1 (en) * 2004-03-11 2008-04-03 Chow David Q Managing bad blocks in various flash memory cells for electronic data flash card
EP1712985A1 (de) * 2005-04-15 2006-10-18 Deutsche Thomson-Brandt Gmbh Verfahren und System zum Speichern von logischen Datenblöcken in Löschblöcken in mehreren nichtflüchtigen Speichereinheiten, die an mindestens einem gemeinsamen Datenbus angeschlossen sind
US7568075B2 (en) * 2005-09-22 2009-07-28 Hitachi, Ltd. Apparatus, system and method for making endurance of storage media
JP4863749B2 (ja) * 2006-03-29 2012-01-25 株式会社日立製作所 フラッシュメモリを用いた記憶装置、その消去回数平準化方法、及び消去回数平準化プログラム
JP4956068B2 (ja) * 2006-06-30 2012-06-20 株式会社東芝 半導体記憶装置およびその制御方法
JP4926659B2 (ja) 2006-11-07 2012-05-09 株式会社ダイセル ガス発生器
US7904672B2 (en) * 2006-12-08 2011-03-08 Sandforce, Inc. System and method for providing data redundancy after reducing memory writes

Also Published As

Publication number Publication date
EP2112598A1 (de) 2009-10-28
US20100241793A1 (en) 2010-09-23
WO2009130848A1 (ja) 2009-10-29
US20090271564A1 (en) 2009-10-29
EP2112598B1 (de) 2011-11-16
JPWO2009130848A1 (ja) 2011-08-11

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