ATE534147T1 - Photodetektorelement - Google Patents
PhotodetektorelementInfo
- Publication number
- ATE534147T1 ATE534147T1 AT10169281T AT10169281T ATE534147T1 AT E534147 T1 ATE534147 T1 AT E534147T1 AT 10169281 T AT10169281 T AT 10169281T AT 10169281 T AT10169281 T AT 10169281T AT E534147 T1 ATE534147 T1 AT E534147T1
- Authority
- AT
- Austria
- Prior art keywords
- medium
- index
- semiconductor layer
- photodetector element
- region
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 abstract 3
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
- H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
- H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
- H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
- H10F30/221—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PN homojunction
- H10F30/2212—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PN homojunction the devices comprising active layers made of only Group II-VI materials, e.g. HgCdTe infrared photodiodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
- H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
- H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
Landscapes
- Light Receiving Elements (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR0954868A FR2947956A1 (fr) | 2009-07-13 | 2009-07-13 | Element photodetecteur |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ATE534147T1 true ATE534147T1 (de) | 2011-12-15 |
Family
ID=42078932
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AT10169281T ATE534147T1 (de) | 2009-07-13 | 2010-07-12 | Photodetektorelement |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US8125043B2 (de) |
| EP (1) | EP2276072B1 (de) |
| JP (1) | JP5785698B2 (de) |
| CN (1) | CN101958356A (de) |
| AT (1) | ATE534147T1 (de) |
| FR (1) | FR2947956A1 (de) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2940522B1 (fr) * | 2008-12-24 | 2011-03-18 | Commissariat Energie Atomique | Photodetecteur comprenant une region semiconductrice tres mince |
| FR2992471B1 (fr) * | 2012-06-20 | 2015-05-15 | Commissariat Energie Atomique | Structure semiconductrice comportant une zone absorbante placee dans une cavite focalisante |
| FR2992470B1 (fr) * | 2012-06-26 | 2014-08-08 | Commissariat Energie Atomique | Element photodetecteur pour une radiation lumineuse infrarouge et photodetecteur comprenant un tel element photodetecteur |
| FR3021807B1 (fr) | 2014-05-27 | 2017-09-29 | Commissariat A L Energie Atomique Et Aux Energies Alternatives | Matrice de photodiodes mesa a ftm amelioree |
| US10177267B2 (en) * | 2017-03-03 | 2019-01-08 | Bolb Inc. | Photodetector |
| FR3093235B1 (fr) | 2019-02-27 | 2021-03-12 | Commissariat Energie Atomique | Structure de détection de rayonnement électromagnétique à haute efficacité d’absorption et un procédé de fabrication d’une telle structure |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6111254A (en) * | 1986-07-14 | 2000-08-29 | Lockheed Martin Corporation | Infrared radiation detector |
| JPH039576A (ja) * | 1989-06-06 | 1991-01-17 | Fujitsu Ltd | 赤外線検知素子 |
| US5373182A (en) * | 1993-01-12 | 1994-12-13 | Santa Barbara Research Center | Integrated IR and visible detector |
| JP2001272271A (ja) * | 2000-01-17 | 2001-10-05 | Mitsubishi Electric Corp | 赤外線センサ |
| JP3910817B2 (ja) * | 2000-12-19 | 2007-04-25 | ユーディナデバイス株式会社 | 半導体受光装置 |
| KR20060130045A (ko) * | 2003-11-20 | 2006-12-18 | 시옵티컬 인코포레이티드 | 실리콘계열 쇼트키 장벽 적외선 광검출기 |
| US7329871B2 (en) * | 2005-02-04 | 2008-02-12 | Stc.Unm | Plasmonic enhanced infrared detector element |
| US7305157B2 (en) * | 2005-11-08 | 2007-12-04 | Massachusetts Institute Of Technology | Vertically-integrated waveguide photodetector apparatus and related coupling methods |
-
2009
- 2009-07-13 FR FR0954868A patent/FR2947956A1/fr active Pending
-
2010
- 2010-07-12 JP JP2010158017A patent/JP5785698B2/ja not_active Expired - Fee Related
- 2010-07-12 AT AT10169281T patent/ATE534147T1/de active
- 2010-07-12 EP EP10169281A patent/EP2276072B1/de not_active Not-in-force
- 2010-07-13 US US12/835,335 patent/US8125043B2/en not_active Expired - Fee Related
- 2010-07-13 CN CN2010102296473A patent/CN101958356A/zh active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| JP5785698B2 (ja) | 2015-09-30 |
| CN101958356A (zh) | 2011-01-26 |
| EP2276072B1 (de) | 2011-11-16 |
| US20110018087A1 (en) | 2011-01-27 |
| FR2947956A1 (fr) | 2011-01-14 |
| JP2011023720A (ja) | 2011-02-03 |
| US8125043B2 (en) | 2012-02-28 |
| EP2276072A1 (de) | 2011-01-19 |
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