ATE534938T1 - Optische beleuchtungseinheit für die euv- mikrolithografie - Google Patents

Optische beleuchtungseinheit für die euv- mikrolithografie

Info

Publication number
ATE534938T1
ATE534938T1 AT10191631T AT10191631T ATE534938T1 AT E534938 T1 ATE534938 T1 AT E534938T1 AT 10191631 T AT10191631 T AT 10191631T AT 10191631 T AT10191631 T AT 10191631T AT E534938 T1 ATE534938 T1 AT E534938T1
Authority
AT
Austria
Prior art keywords
facet
facet elements
reflective
elements
reflective facet
Prior art date
Application number
AT10191631T
Other languages
English (en)
Inventor
Martin Endres
Sebastian Doern
Stig Bieling
Marc Kirch
Original Assignee
Zeiss Carl Smt Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Zeiss Carl Smt Gmbh filed Critical Zeiss Carl Smt Gmbh
Application granted granted Critical
Publication of ATE534938T1 publication Critical patent/ATE534938T1/de

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70075—Homogenization of illumination intensity in the mask plane by using an integrator, e.g. fly's eye lens, facet mirror or glass rod, by using a diffusing optical element or by beam deflection
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70233—Optical aspects of catoptric systems, i.e. comprising only reflective elements, e.g. extreme ultraviolet [EUV] projection systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70091—Illumination settings, i.e. intensity distribution in the pupil plane or angular distribution in the field plane; On-axis or off-axis settings, e.g. annular, dipole or quadrupole settings; Partial coherence control, i.e. sigma or numerical aperture [NA]
    • G03F7/70116—Off-axis setting using a programmable means, e.g. liquid crystal display [LCD], digital micromirror device [DMD] or pupil facets
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/702—Reflective illumination, i.e. reflective optical elements other than folding mirrors, e.g. extreme ultraviolet [EUV] illumination systems
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/08—Mirrors
    • G02B5/09—Multifaceted or polygonal mirrors, e.g. polygonal scanning mirrors; Fresnel mirrors

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Lenses (AREA)
  • Microscoopes, Condenser (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Optical Elements Other Than Lenses (AREA)
AT10191631T 2009-12-11 2010-11-18 Optische beleuchtungseinheit für die euv- mikrolithografie ATE534938T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE102009054540A DE102009054540B4 (de) 2009-12-11 2009-12-11 Beleuchtungsoptik für die EUV-Mikrolithographie

Publications (1)

Publication Number Publication Date
ATE534938T1 true ATE534938T1 (de) 2011-12-15

Family

ID=43425885

Family Applications (1)

Application Number Title Priority Date Filing Date
AT10191631T ATE534938T1 (de) 2009-12-11 2010-11-18 Optische beleuchtungseinheit für die euv- mikrolithografie

Country Status (7)

Country Link
US (1) US8395754B2 (de)
EP (1) EP2333611B8 (de)
JP (2) JP5759174B2 (de)
KR (1) KR101681785B1 (de)
AT (1) ATE534938T1 (de)
DE (1) DE102009054540B4 (de)
TW (1) TWI509365B (de)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102009045135A1 (de) * 2009-09-30 2011-03-31 Carl Zeiss Smt Gmbh Beleuchtungsoptik für die Mikrolithographie
DE102010062720B4 (de) 2010-12-09 2012-07-12 Carl Zeiss Smt Gmbh EUV-Lithographiesystem
DE102011076460A1 (de) * 2011-05-25 2012-11-29 Carl Zeiss Smt Gmbh Beleuchtungsoptik
WO2013013947A2 (en) 2011-07-26 2013-01-31 Carl Zeiss Smt Gmbh Optical system of a microlithographic projection exposure apparatus, and microlithographic exposure method
DE102011088152A1 (de) 2011-12-09 2013-06-13 Carl Zeiss Smt Gmbh EUV-Lithographiesystem
DE102012207377A1 (de) * 2012-05-03 2013-11-07 Carl Zeiss Smt Gmbh Beleuchtungsoptik sowie optisches System für die EUV-Projektionslithographie
DE102012213368A1 (de) 2012-07-30 2013-12-05 Carl Zeiss Smt Gmbh Beleuchtungsoptik für die EUV-Projektionslithographie
DE102012218221A1 (de) 2012-10-05 2014-04-10 Carl Zeiss Smt Gmbh Monitorsystem zum Bestimmen von Orientierungen von Spiegelelementen und EUV-Lithographiesystem
DE102012220597A1 (de) 2012-11-13 2014-05-28 Carl Zeiss Smt Gmbh Beleuchtungsoptik für die EUV-Projektionslithographie
EP2876499B1 (de) 2013-11-22 2017-05-24 Carl Zeiss SMT GmbH Beleuchtungssystem eines mikrolithografischen Projektionsbelichtungsgerätes
CN107223217B (zh) * 2015-02-11 2020-06-02 卡尔蔡司Smt有限责任公司 Euv投射光刻的照明光学系统
KR20230167934A (ko) 2022-06-03 2023-12-12 삼성전자주식회사 극자외선 노광 장치 및 그것의 동작 방법

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5233456A (en) * 1991-12-20 1993-08-03 Texas Instruments Incorporated Resonant mirror and method of manufacture
DE10053587A1 (de) * 2000-10-27 2002-05-02 Zeiss Carl Beleuchtungssystem mit variabler Einstellung der Ausleuchtung
JP4401060B2 (ja) * 2001-06-01 2010-01-20 エーエスエムエル ネザーランズ ビー．ブイ． リトグラフ装置、およびデバイス製造方法
US7015491B2 (en) * 2001-06-01 2006-03-21 Asml Netherlands B.V. Lithographic apparatus, device manufacturing method and device manufactured thereby, control system
US7170587B2 (en) * 2002-03-18 2007-01-30 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
DE10219514A1 (de) * 2002-04-30 2003-11-13 Zeiss Carl Smt Ag Beleuchtungssystem, insbesondere für die EUV-Lithographie
US6700644B2 (en) * 2002-06-05 2004-03-02 Euv Llc Condenser for photolithography system
US6870554B2 (en) * 2003-01-07 2005-03-22 Anvik Corporation Maskless lithography with multiplexed spatial light modulators
DE10317667A1 (de) * 2003-04-17 2004-11-18 Carl Zeiss Smt Ag Optisches Element für ein Beleuchtungssystem
US20050017465A1 (en) * 2003-07-24 2005-01-27 Bergstrom Skegs, Inc. Wear rod for a snowmobile ski
US7714983B2 (en) * 2003-09-12 2010-05-11 Carl Zeiss Smt Ag Illumination system for a microlithography projection exposure installation
KR101309880B1 (ko) 2005-05-13 2013-09-17 칼 짜이스 에스엠티 게엠베하 낮은 입사각을 갖는 육-미러 ｅｕｖ 프로젝션 시스템
WO2007045434A2 (de) 2005-10-18 2007-04-26 Carl Zeiss Smt Ag Kollektor für beleuchtungssysteme mit einer wellenlänge ≤ 193 nm
DE102006020734A1 (de) * 2006-05-04 2007-11-15 Carl Zeiss Smt Ag Beleuchtungssystem für die EUV-Lithographie sowie erstes und zweites optisches Element zum Einsatz in einem derartigen Beleuchtungssystem
JP5262063B2 (ja) * 2007-10-23 2013-08-14 株式会社ニコン 空間光変調ユニット、照明装置、露光装置、及びデバイスの製造方法
EP2243047B1 (de) * 2008-02-15 2021-03-31 Carl Zeiss SMT GmbH Facettenspiegel zur verwendung in einer projektionsbelichtungsvorrichtung für die mikrolithografie
DE102008009600A1 (de) * 2008-02-15 2009-08-20 Carl Zeiss Smt Ag Facettenspiegel zum Einsatz in einer Projektionsbelichtungsanlage für die Mikro-Lithographie
DE102008001511A1 (de) 2008-04-30 2009-11-05 Carl Zeiss Smt Ag Beleuchtungsoptik für die EUV-Mikrolithografie sowie Beleuchtungssystem und Projektionsbelichtungsanlage mit einer derartigen Beleuchtungsoptik
NL2004429A (en) * 2009-08-25 2011-02-28 Asml Netherlands Bv Illumination system, lithographic apparatus and method of adjusting an illumination mode.
JP6103467B2 (ja) * 2011-10-06 2017-03-29 株式会社ニコン 照明光学系、照明方法、露光装置、露光方法、およびデバイス製造方法

Also Published As

Publication number Publication date
KR101681785B1 (ko) 2016-12-12
DE102009054540B4 (de) 2011-11-10
JP2011124584A (ja) 2011-06-23
JP2015163994A (ja) 2015-09-10
KR20110066868A (ko) 2011-06-17
EP2333611B8 (de) 2012-03-07
TWI509365B (zh) 2015-11-21
EP2333611A1 (de) 2011-06-15
JP6089375B2 (ja) 2017-03-08
DE102009054540A1 (de) 2011-06-16
TW201126282A (en) 2011-08-01
JP5759174B2 (ja) 2015-08-05
EP2333611B1 (de) 2011-11-23
US8395754B2 (en) 2013-03-12
US20110141445A1 (en) 2011-06-16

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