ATE535027T1 - Lichtemittierende iii-nitrid-vorrichtung mit spannungsreduzierter lichtemittierender schicht - Google Patents

Lichtemittierende iii-nitrid-vorrichtung mit spannungsreduzierter lichtemittierender schicht

Info

Publication number
ATE535027T1
ATE535027T1 AT07859487T AT07859487T ATE535027T1 AT E535027 T1 ATE535027 T1 AT E535027T1 AT 07859487 T AT07859487 T AT 07859487T AT 07859487 T AT07859487 T AT 07859487T AT E535027 T1 ATE535027 T1 AT E535027T1
Authority
AT
Austria
Prior art keywords
layer
strain
light
iii
stress
Prior art date
Application number
AT07859487T
Other languages
English (en)
Inventor
Sungsoo Yi
Aurelien J F David
Nathan F Gardner
Michael R Krames
Linda T Romano
Original Assignee
Koninkl Philips Electronics Nv
Philips Lumileds Lighting Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Koninkl Philips Electronics Nv, Philips Lumileds Lighting Co filed Critical Koninkl Philips Electronics Nv
Application granted granted Critical
Publication of ATE535027T1 publication Critical patent/ATE535027T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0133—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials
    • H10H20/01335—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials the light-emitting regions comprising nitride materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/815—Bodies having stress relaxation structures, e.g. buffer layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H10H20/82—Roughened surfaces, e.g. at the interface between epitaxial layers

Landscapes

  • Led Devices (AREA)
  • Semiconductor Lasers (AREA)
AT07859487T 2006-12-22 2007-12-20 Lichtemittierende iii-nitrid-vorrichtung mit spannungsreduzierter lichtemittierender schicht ATE535027T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/615,479 US7663148B2 (en) 2006-12-22 2006-12-22 III-nitride light emitting device with reduced strain light emitting layer
PCT/IB2007/055263 WO2008078298A2 (en) 2006-12-22 2007-12-20 Iii-nitride light emitting device with reduced strain light emitting layer

Publications (1)

Publication Number Publication Date
ATE535027T1 true ATE535027T1 (de) 2011-12-15

Family

ID=39387241

Family Applications (1)

Application Number Title Priority Date Filing Date
AT07859487T ATE535027T1 (de) 2006-12-22 2007-12-20 Lichtemittierende iii-nitrid-vorrichtung mit spannungsreduzierter lichtemittierender schicht

Country Status (11)

Country Link
US (1) US7663148B2 (de)
EP (1) EP2095436B1 (de)
JP (2) JP5420419B2 (de)
KR (2) KR101445810B1 (de)
CN (1) CN101601140B (de)
AT (1) ATE535027T1 (de)
BR (1) BRPI0720931B1 (de)
ES (1) ES2377487T3 (de)
RU (2) RU2457581C2 (de)
TW (2) TW201535780A (de)
WO (1) WO2008078298A2 (de)

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Also Published As

Publication number Publication date
RU2457581C2 (ru) 2012-07-27
JP2010514191A (ja) 2010-04-30
WO2008078298A3 (en) 2008-08-21
RU2012103169A (ru) 2013-08-10
TW201535780A (zh) 2015-09-16
CN101601140A (zh) 2009-12-09
JP5420419B2 (ja) 2014-02-19
RU2591246C2 (ru) 2016-07-20
KR20140036022A (ko) 2014-03-24
CN101601140B (zh) 2012-11-14
EP2095436A2 (de) 2009-09-02
KR20090095656A (ko) 2009-09-09
RU2009128232A (ru) 2011-01-27
KR101445810B1 (ko) 2014-10-01
BRPI0720931A2 (pt) 2014-03-11
TWI520371B (zh) 2016-02-01
EP2095436B1 (de) 2011-11-23
US20080149942A1 (en) 2008-06-26
WO2008078298A2 (en) 2008-07-03
JP2014057076A (ja) 2014-03-27
TW200843150A (en) 2008-11-01
KR101484467B1 (ko) 2015-01-20
BRPI0720931B1 (pt) 2018-12-11
JP5726255B2 (ja) 2015-05-27
ES2377487T3 (es) 2012-03-28
US7663148B2 (en) 2010-02-16

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