ATE535935T1 - Eine kammer und ein verfahren zur waferherstellung - Google Patents

Eine kammer und ein verfahren zur waferherstellung

Info

Publication number
ATE535935T1
ATE535935T1 AT04758931T AT04758931T ATE535935T1 AT E535935 T1 ATE535935 T1 AT E535935T1 AT 04758931 T AT04758931 T AT 04758931T AT 04758931 T AT04758931 T AT 04758931T AT E535935 T1 ATE535935 T1 AT E535935T1
Authority
AT
Austria
Prior art keywords
chamber
wafer
pressure
clamping apparatus
fluid flow
Prior art date
Application number
AT04758931T
Other languages
English (en)
Inventor
John Parks
Original Assignee
Lam Res Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US10/404,502 external-priority patent/US7153388B2/en
Priority claimed from US10/404,472 external-priority patent/US7392815B2/en
Priority claimed from US10/404,402 external-priority patent/US7357115B2/en
Application filed by Lam Res Corp filed Critical Lam Res Corp
Application granted granted Critical
Publication of ATE535935T1 publication Critical patent/ATE535935T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0441—Apparatus for sealing, encapsulating, glassing, decapsulating or the like
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
    • B08B7/0021—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by liquid gases or supercritical fluids
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0406—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H10P72/0411—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H10P72/0414—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0434—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/30—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations
    • H10P72/33—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations into and out of processing chamber
    • H10P72/3308—Vertical transfer of a single workpiece
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/78—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using vacuum or suction, e.g. Bernoulli chucks

Landscapes

  • Cleaning Or Drying Semiconductors (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
AT04758931T 2003-03-31 2004-03-23 Eine kammer und ein verfahren zur waferherstellung ATE535935T1 (de)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US10/404,502 US7153388B2 (en) 2003-03-31 2003-03-31 Chamber for high-pressure wafer processing and method for making the same
US10/404,472 US7392815B2 (en) 2003-03-31 2003-03-31 Chamber for wafer cleaning and method for making the same
US10/404,402 US7357115B2 (en) 2003-03-31 2003-03-31 Wafer clamping apparatus and method for operating the same
PCT/US2004/008994 WO2004093166A2 (en) 2003-03-31 2004-03-23 Chamber and associated methods for wafer processing

Publications (1)

Publication Number Publication Date
ATE535935T1 true ATE535935T1 (de) 2011-12-15

Family

ID=33303846

Family Applications (1)

Application Number Title Priority Date Filing Date
AT04758931T ATE535935T1 (de) 2003-03-31 2004-03-23 Eine kammer und ein verfahren zur waferherstellung

Country Status (7)

Country Link
EP (1) EP1609174B1 (de)
JP (1) JP4560040B2 (de)
KR (3) KR101121938B1 (de)
AT (1) ATE535935T1 (de)
MY (2) MY141406A (de)
TW (1) TWI233147B (de)
WO (1) WO2004093166A2 (de)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8323420B2 (en) 2005-06-30 2012-12-04 Lam Research Corporation Method for removing material from semiconductor wafer and apparatus for performing the same
WO2006107549A1 (en) 2005-04-01 2006-10-12 Fsi International, Inc. Compact duct system incorporating moveable and nestable baffles for use in tools used to process microelectronic workpieces with one or more treatment fluids
JP4861016B2 (ja) * 2006-01-23 2012-01-25 株式会社東芝 処理装置
CN101484974B (zh) 2006-07-07 2013-11-06 Fsi国际公司 用于处理微电子工件的设备和方法以及遮挡结构
KR20100031681A (ko) 2007-05-18 2010-03-24 브룩스 오토메이션 인코퍼레이티드 빠른 교환 로봇을 가진 컴팩트 기판 운송 시스템
KR20110005699A (ko) 2008-05-09 2011-01-18 에프에스아이 인터내쇼날 인크. 개방 동작 모드와 폐쇄 동작 모드사이를 용이하게 변경하는 처리실 설계를 이용하여 마이크로일렉트로닉 워크피이스를 처리하는 공구 및 방법
JP5655735B2 (ja) * 2011-07-26 2015-01-21 東京エレクトロン株式会社 処理装置、処理方法及び記憶媒体
CN108140549B (zh) 2015-10-04 2022-12-20 应用材料公司 缩减空间的处理腔室
CN115527897A (zh) 2015-10-04 2022-12-27 应用材料公司 小热质量的加压腔室

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2731950B2 (ja) * 1989-07-13 1998-03-25 キヤノン株式会社 露光方法
EP0463853B1 (de) * 1990-06-29 1998-11-04 Canon Kabushiki Kaisha Platte zum Arbeiten unter Vakuum
US5960555A (en) * 1996-07-24 1999-10-05 Applied Materials, Inc. Method and apparatus for purging the back side of a substrate during chemical vapor processing
US5803797A (en) * 1996-11-26 1998-09-08 Micron Technology, Inc. Method and apparatus to hold intergrated circuit chips onto a chuck and to simultaneously remove multiple intergrated circuit chips from a cutting chuck
US6032997A (en) * 1998-04-16 2000-03-07 Excimer Laser Systems Vacuum chuck
WO2000005750A1 (en) * 1998-07-23 2000-02-03 Applied Materials, Inc. Improved substrate support member
US6279976B1 (en) * 1999-05-13 2001-08-28 Micron Technology, Inc. Wafer handling device having conforming perimeter seal
US6921456B2 (en) * 2000-07-26 2005-07-26 Tokyo Electron Limited High pressure processing chamber for semiconductor substrate
US6716084B2 (en) * 2001-01-11 2004-04-06 Nutool, Inc. Carrier head for holding a wafer and allowing processing on a front face thereof to occur
US6684523B2 (en) * 2001-08-27 2004-02-03 Applied Materials, Inc. Particle removal apparatus
US20030047551A1 (en) * 2001-09-13 2003-03-13 Worm Steven Lee Guard heater and pressure chamber assembly including the same
JP3960462B2 (ja) * 2001-09-17 2007-08-15 大日本スクリーン製造株式会社 基板処理装置

Also Published As

Publication number Publication date
TWI233147B (en) 2005-05-21
WO2004093166A3 (en) 2005-01-06
KR20110028541A (ko) 2011-03-18
EP1609174A2 (de) 2005-12-28
KR101121938B1 (ko) 2012-03-14
EP1609174B1 (de) 2011-11-30
JP2007524990A (ja) 2007-08-30
KR20050118226A (ko) 2005-12-15
WO2004093166A2 (en) 2004-10-28
MY141406A (en) 2010-04-30
MY142891A (en) 2011-01-31
TW200425243A (en) 2004-11-16
KR20110028540A (ko) 2011-03-18
KR101121937B1 (ko) 2012-03-14
JP4560040B2 (ja) 2010-10-13
KR101071603B1 (ko) 2011-10-10

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