ATE536618T1 - Auswahlvorrichtung für einen magnetoresistiven speicher mit spin-transfer - Google Patents

Auswahlvorrichtung für einen magnetoresistiven speicher mit spin-transfer

Info

Publication number
ATE536618T1
ATE536618T1 AT10172703T AT10172703T ATE536618T1 AT E536618 T1 ATE536618 T1 AT E536618T1 AT 10172703 T AT10172703 T AT 10172703T AT 10172703 T AT10172703 T AT 10172703T AT E536618 T1 ATE536618 T1 AT E536618T1
Authority
AT
Austria
Prior art keywords
selection device
transistors
magnetorresistive
memory
spin
Prior art date
Application number
AT10172703T
Other languages
English (en)
Inventor
Romney R Katti
Original Assignee
Honeywell Int Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Honeywell Int Inc filed Critical Honeywell Int Inc
Application granted granted Critical
Publication of ATE536618T1 publication Critical patent/ATE536618T1/de

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1659—Cell access

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Hall/Mr Elements (AREA)
AT10172703T 2009-10-30 2010-08-12 Auswahlvorrichtung für einen magnetoresistiven speicher mit spin-transfer ATE536618T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US12/610,158 US8411493B2 (en) 2009-10-30 2009-10-30 Selection device for a spin-torque transfer magnetic random access memory

Publications (1)

Publication Number Publication Date
ATE536618T1 true ATE536618T1 (de) 2011-12-15

Family

ID=42697643

Family Applications (1)

Application Number Title Priority Date Filing Date
AT10172703T ATE536618T1 (de) 2009-10-30 2010-08-12 Auswahlvorrichtung für einen magnetoresistiven speicher mit spin-transfer

Country Status (4)

Country Link
US (1) US8411493B2 (de)
EP (1) EP2320425B1 (de)
JP (1) JP5676177B2 (de)
AT (1) ATE536618T1 (de)

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US20130028010A1 (en) * 2011-07-29 2013-01-31 Qualcomm Incorporated Fast MTJ Switching Write Circuit For MRAM Array
TW201442082A (zh) * 2013-01-29 2014-11-01 Ps4 Luxco Sarl 半導體裝置及其製造方法
KR102011138B1 (ko) 2013-04-25 2019-10-21 삼성전자주식회사 전류 생성기를 포함하는 불휘발성 메모리 장치 및 그것의 동작 전류 보정 방법
US20150070981A1 (en) * 2013-09-06 2015-03-12 Yoshinori Kumura Magnetoresistance element and magnetoresistive memory
US9087535B2 (en) * 2013-10-31 2015-07-21 Seagate Technology Llc Spin transport sensor
US9418721B2 (en) 2014-01-21 2016-08-16 International Business Machines Corporation Determining and storing bit error rate relationships in spin transfer torque magnetoresistive random-access memory (STT-MRAM)
US9406368B2 (en) 2014-01-21 2016-08-02 International Business Machines Corporation Dynamic temperature adjustments in spin transfer torque magnetoresistive random-access memory (STT-MRAM)
US20160064452A1 (en) * 2014-08-26 2016-03-03 Kabushiki Kaisha Toshiba Memory device
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US12463146B2 (en) * 2021-07-14 2025-11-04 Honeywell International Inc. Magnetic shielding for magnetic devices

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Also Published As

Publication number Publication date
EP2320425A1 (de) 2011-05-11
US8411493B2 (en) 2013-04-02
EP2320425B1 (de) 2011-12-07
JP2011100530A (ja) 2011-05-19
US20120287708A1 (en) 2012-11-15
JP5676177B2 (ja) 2015-02-25

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