ATE537560T1 - Bildsensorpixel mit grosser apertur - Google Patents

Bildsensorpixel mit grosser apertur

Info

Publication number
ATE537560T1
ATE537560T1 AT09762881T AT09762881T ATE537560T1 AT E537560 T1 ATE537560 T1 AT E537560T1 AT 09762881 T AT09762881 T AT 09762881T AT 09762881 T AT09762881 T AT 09762881T AT E537560 T1 ATE537560 T1 AT E537560T1
Authority
AT
Austria
Prior art keywords
charge
voltage conversion
conversion mechanism
transfer transistors
image sensor
Prior art date
Application number
AT09762881T
Other languages
English (en)
Inventor
Christopher Parks
Original Assignee
Omnivision Tech Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Omnivision Tech Inc filed Critical Omnivision Tech Inc
Application granted granted Critical
Publication of ATE537560T1 publication Critical patent/ATE537560T1/de

Links

Classifications

    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H04N25/778—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising amplifiers shared between a plurality of pixels, i.e. at least one part of the amplifier must be on the sensor array itself
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/40—Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled
    • H04N25/46—Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled by combining or binning pixels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/813—Electronic components shared by multiple pixels, e.g. one amplifier shared by two pixels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/014—Manufacture or treatment of image sensors covered by group H10F39/12 of CMOS image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/182—Colour image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/811—Interconnections

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Color Television Image Signal Generators (AREA)
AT09762881T 2008-06-13 2009-06-09 Bildsensorpixel mit grosser apertur ATE537560T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US12/138,651 US8035716B2 (en) 2008-06-13 2008-06-13 Wide aperture image sensor pixel
PCT/US2009/003476 WO2009151585A1 (en) 2008-06-13 2009-06-09 Wide aperture image sensor pixel

Publications (1)

Publication Number Publication Date
ATE537560T1 true ATE537560T1 (de) 2011-12-15

Family

ID=40940390

Family Applications (1)

Application Number Title Priority Date Filing Date
AT09762881T ATE537560T1 (de) 2008-06-13 2009-06-09 Bildsensorpixel mit grosser apertur

Country Status (8)

Country Link
US (1) US8035716B2 (de)
EP (1) EP2304798B1 (de)
JP (1) JP5343128B2 (de)
KR (1) KR101438710B1 (de)
CN (1) CN102057668B (de)
AT (1) ATE537560T1 (de)
TW (1) TWI466275B (de)
WO (1) WO2009151585A1 (de)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI504256B (zh) * 2008-04-07 2015-10-11 新力股份有限公司 固態成像裝置，其訊號處理方法，及電子設備
JP5537172B2 (ja) 2010-01-28 2014-07-02 ソニー株式会社 固体撮像装置及び電子機器
JP5644177B2 (ja) 2010-05-07 2014-12-24 ソニー株式会社 固体撮像装置、および、その製造方法、電子機器
KR102076217B1 (ko) * 2013-08-06 2020-03-02 삼성전자주식회사 이미지 센서 및 이를 포함하는 전자 장치
US9398237B2 (en) * 2014-04-30 2016-07-19 Sony Corporation Image sensor with floating diffusion interconnect capacitor
GB2537421A (en) * 2015-04-17 2016-10-19 Stmicroelectronics (Research & Development) Ltd A pixel having a plurality of photodiodes
JP7458746B2 (ja) * 2019-11-01 2024-04-01 キヤノン株式会社 光電変換装置、撮像システム及び移動体

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5164831A (en) 1990-03-15 1992-11-17 Eastman Kodak Company Electronic still camera providing multi-format storage of full and reduced resolution images
ATE202882T1 (de) 1997-12-18 2001-07-15 Simage Oy Vorrichtung zur strahlungsbildaufnahme
JP2000152086A (ja) * 1998-11-11 2000-05-30 Canon Inc 撮像装置および撮像システム
US7057656B2 (en) 2000-02-11 2006-06-06 Hyundai Electronics Industries Co., Ltd. Pixel for CMOS image sensor having a select shape for low pixel crosstalk
US7338168B2 (en) * 2001-07-06 2008-03-04 Palantyr Research, Llc Particle analyzing system and methodology
JP4109944B2 (ja) * 2002-09-20 2008-07-02 キヤノン株式会社 固体撮像装置の製造方法
JP3916612B2 (ja) * 2003-02-13 2007-05-16 松下電器産業株式会社 固体撮像装置、その駆動方法及びそれを用いたカメラ
US7443437B2 (en) * 2003-11-26 2008-10-28 Micron Technology, Inc. Image sensor with a gated storage node linked to transfer gate
JP4230406B2 (ja) * 2004-04-27 2009-02-25 富士通マイクロエレクトロニクス株式会社 固体撮像装置
CN1993832B (zh) 2004-07-20 2010-08-18 富士通微电子株式会社 Cmos摄像元件
JP4492250B2 (ja) * 2004-08-11 2010-06-30 ソニー株式会社 固体撮像素子
JP2006237462A (ja) * 2005-02-28 2006-09-07 Matsushita Electric Ind Co Ltd 固体撮像装置
JP4224036B2 (ja) * 2005-03-17 2009-02-12 富士通マイクロエレクトロニクス株式会社 フォトダイオード領域を埋め込んだイメージセンサ及びその製造方法
WO2007011061A1 (en) * 2005-07-22 2007-01-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8139130B2 (en) * 2005-07-28 2012-03-20 Omnivision Technologies, Inc. Image sensor with improved light sensitivity
US8274715B2 (en) 2005-07-28 2012-09-25 Omnivision Technologies, Inc. Processing color and panchromatic pixels
JP4764243B2 (ja) * 2006-04-20 2011-08-31 株式会社東芝 固体撮像装置
US7773138B2 (en) 2006-09-13 2010-08-10 Tower Semiconductor Ltd. Color pattern and pixel level binning for APS image sensor using 2×2 photodiode sharing scheme
US20080136933A1 (en) 2006-12-11 2008-06-12 Digital Imaging Systems Gmbh Apparatus for controlling operation of a multiple photosensor pixel image sensor

Also Published As

Publication number Publication date
US20090310004A1 (en) 2009-12-17
EP2304798B1 (de) 2011-12-14
KR20110028622A (ko) 2011-03-21
WO2009151585A1 (en) 2009-12-17
KR101438710B1 (ko) 2014-09-05
CN102057668B (zh) 2016-09-21
TW201013909A (en) 2010-04-01
CN102057668A (zh) 2011-05-11
JP2011525735A (ja) 2011-09-22
US8035716B2 (en) 2011-10-11
TWI466275B (zh) 2014-12-21
EP2304798A1 (de) 2011-04-06
JP5343128B2 (ja) 2013-11-13

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