ATE538491T1 - Mehrschichtiger filmreflexionsspiegel, herstellungsverfahren für einen mehrschichtigen filmreflexionsspiegel und belichtungssystem - Google Patents

Mehrschichtiger filmreflexionsspiegel, herstellungsverfahren für einen mehrschichtigen filmreflexionsspiegel und belichtungssystem

Info

Publication number
ATE538491T1
ATE538491T1 AT04792501T AT04792501T ATE538491T1 AT E538491 T1 ATE538491 T1 AT E538491T1 AT 04792501 T AT04792501 T AT 04792501T AT 04792501 T AT04792501 T AT 04792501T AT E538491 T1 ATE538491 T1 AT E538491T1
Authority
AT
Austria
Prior art keywords
multilayer
reflectivity
layer film
reflection mirror
film reflection
Prior art date
Application number
AT04792501T
Other languages
English (en)
Inventor
Noriaki Kandaka
Katsuhiko Murakami
Takaharu Komiya
Masayuki Shiraishi
Original Assignee
Nikon Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=34468462&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=ATE538491(T1) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Nikon Corp filed Critical Nikon Corp
Application granted granted Critical
Publication of ATE538491T1 publication Critical patent/ATE538491T1/de

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70316—Details of optical elements, e.g. of Bragg reflectors, extreme ultraviolet [EUV] multilayer or bilayer mirrors or diffractive optical elements
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/08—Mirrors
    • G02B5/0891—Ultraviolet [UV] mirrors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/7095—Materials, e.g. materials for housing, stage or other support having particular properties, e.g. weight, strength, conductivity, thermal expansion coefficient
    • G03F7/70958—Optical materials or coatings, e.g. with particular transmittance, reflectance or anti-reflection properties
    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21K—HANDLING OF PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K1/00—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating
    • G21K1/06—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating using diffraction, refraction or reflection, e.g. monochromators
    • G21K1/062—Devices having a multilayer structure

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Optics & Photonics (AREA)
  • Public Health (AREA)
  • Theoretical Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Health & Medical Sciences (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Engineering & Computer Science (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Optical Elements Other Than Lenses (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
AT04792501T 2003-10-15 2004-10-15 Mehrschichtiger filmreflexionsspiegel, herstellungsverfahren für einen mehrschichtigen filmreflexionsspiegel und belichtungssystem ATE538491T1 (de)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2003354561 2003-10-15
JP2003354568 2003-10-15
JP2003354989 2003-10-15
JP2004094633 2004-03-29
PCT/JP2004/015284 WO2005038886A1 (ja) 2003-10-15 2004-10-15 多層膜反射鏡、多層膜反射鏡の製造方法、及び露光装置

Publications (1)

Publication Number Publication Date
ATE538491T1 true ATE538491T1 (de) 2012-01-15

Family

ID=34468462

Family Applications (1)

Application Number Title Priority Date Filing Date
AT04792501T ATE538491T1 (de) 2003-10-15 2004-10-15 Mehrschichtiger filmreflexionsspiegel, herstellungsverfahren für einen mehrschichtigen filmreflexionsspiegel und belichtungssystem

Country Status (6)

Country Link
US (3) US7382527B2 (de)
EP (1) EP1675164B2 (de)
JP (1) JP4466566B2 (de)
KR (1) KR101083466B1 (de)
AT (1) ATE538491T1 (de)
WO (1) WO2005038886A1 (de)

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JP4532991B2 (ja) * 2004-05-26 2010-08-25 キヤノン株式会社 投影光学系、露光装置及びデバイス製造方法
CN101084458B (zh) * 2004-12-17 2011-11-30 优泊公司 光反射体及使用该光反射体的面光源装置
JP4703354B2 (ja) * 2005-10-14 2011-06-15 Ｈｏｙａ株式会社 多層反射膜付き基板、その製造方法、反射型マスクブランクおよび反射型マスク
JP4703353B2 (ja) * 2005-10-14 2011-06-15 Ｈｏｙａ株式会社 多層反射膜付き基板、その製造方法、反射型マスクブランクおよび反射型マスク
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JP2007258625A (ja) * 2006-03-27 2007-10-04 Nikon Corp 露光装置及びレチクル
JP2008083189A (ja) * 2006-09-26 2008-04-10 Matsushita Electric Ind Co Ltd 位相シフトマスクおよび集光素子の製造方法
JPWO2008090988A1 (ja) * 2007-01-25 2010-05-20 株式会社ニコン 光学素子、これを用いた露光装置、及びデバイス製造方法
US20080266651A1 (en) * 2007-04-24 2008-10-30 Katsuhiko Murakami Optical apparatus, multilayer-film reflective mirror, exposure apparatus, and device
DE102008002403A1 (de) * 2008-06-12 2009-12-17 Carl Zeiss Smt Ag Verfahren zum Herstellen einer Mehrlagen-Beschichtung, optisches Element und optische Anordnung
US8693090B2 (en) 2008-07-07 2014-04-08 Koninklijke Philips N.V. Extreme UV radiation reflecting element comprising a sputter-resistant material
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DE102009017095A1 (de) * 2009-04-15 2010-10-28 Carl Zeiss Smt Ag Spiegel für den EUV-Wellenlängenbereich, Projektionsobjektiv für die Mikrolithographie mit einem solchen Spiegel und Projektionsbelichtungsanlage für die Mikrolithographie mit einem solchen Projektionsobjektiv
US20100271693A1 (en) * 2009-04-24 2010-10-28 Manuela Vidal Dasilva Narrowband filters for the extreme ultraviolet
DE102009032779A1 (de) * 2009-07-10 2011-01-13 Carl Zeiss Smt Ag Spiegel für den EUV-Wellenlängenbereich, Projektionsobjektiv für die Mikrolithographie mit einem solchen Spiegel und Projektionsbelichtungsanlage für die Mikrolithographie mit einem solchen Projektionsobjektiv
DE102009054986B4 (de) 2009-12-18 2015-11-12 Carl Zeiss Smt Gmbh Reflektive Maske für die EUV-Lithographie
DE102011004615A1 (de) * 2010-03-17 2011-09-22 Carl Zeiss Smt Gmbh Beleuchtungsoptik für die Projektionslithografie
WO2012041697A1 (en) 2010-09-27 2012-04-05 Carl Zeiss Smt Gmbh Mirror, projection objective comprising such a mirror, and projection exposure apparatus for microlithography comprising such a projection objective
DE102010062597A1 (de) * 2010-12-08 2012-06-14 Carl Zeiss Smt Gmbh Reflektives optisches Abbildungssystem
DE102011015141A1 (de) 2011-03-16 2012-09-20 Carl Zeiss Laser Optics Gmbh Verfahren zum Herstellen eines reflektiven optischen Bauelements für eine EUV-Projektionsbelichtungsanlage und derartiges Bauelement
DE102011075579A1 (de) 2011-05-10 2012-11-15 Carl Zeiss Smt Gmbh Spiegel und Projektionsbelichtungsanlage für die Mikrolithographie mit einem solchen Spiegel
JP6093753B2 (ja) 2011-03-23 2017-03-08 カール・ツァイス・エスエムティー・ゲーエムベーハー Ｅｕｖミラー機構、ｅｕｖミラー機構を備えた光学系、及びｅｕｖミラー機構を備えた光学系を操作する方法
DE102011077234A1 (de) 2011-06-08 2012-12-13 Carl Zeiss Smt Gmbh EUV-Spiegelanordnung, optisches System mit EUV-Spiegelanordnung und Verfahren zum Betreiben eines optischen Systems mit EUV-Spiegelanordnung
DE102011005940A1 (de) 2011-03-23 2012-09-27 Carl Zeiss Smt Gmbh EUV-Spiegelanordnung, optisches System mit EUV-Spiegelanordnung und Verfahren zum Betreiben eines optischen Systems mit EUV-Spiegelanordnung
DE102011076011A1 (de) * 2011-05-18 2012-11-22 Carl Zeiss Smt Gmbh Reflektives optisches Element und optisches System für die EUV-Lithographie
FR2984584A1 (fr) * 2011-12-20 2013-06-21 Commissariat Energie Atomique Dispositif de filtrage des rayons x
KR102176709B1 (ko) * 2012-01-19 2020-11-10 수프리야 자이스왈 리소그래피 및 다른 적용분야에서 극자외 방사선을 이용하는 재료, 성분 및 사용을 위한 방법
DE102012203633A1 (de) 2012-03-08 2013-09-12 Carl Zeiss Smt Gmbh Spiegel für den EUV-Wellenlängenbereich, Herstellungsverfahren für einen solchen Spiegel und Projektionsbelichtungsanlage mit einem solchen Spiegel
DE102012105369B4 (de) * 2012-06-20 2015-07-16 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Multilayer-Spiegel für den EUV-Spektralbereich
DE102013200294A1 (de) * 2013-01-11 2014-07-17 Carl Zeiss Smt Gmbh EUV-Spiegel und optisches System mit EUV-Spiegel
JP2014160752A (ja) 2013-02-20 2014-09-04 Asahi Glass Co Ltd Ｅｕｖリソグラフィ用反射型マスクブランクおよび該マスクブランク用反射層付基板
DE102013203364A1 (de) * 2013-02-28 2014-09-11 Carl Zeiss Smt Gmbh Reflektierende Beschichtung mit optimierter Dicke
EP2998980A4 (de) 2013-05-09 2016-11-16 Nikon Corp Optisches element, optisches projektionssystem, belichtungsvorrichtung und verfahren zur herstellung der vorrichtung
DE102013212462A1 (de) * 2013-06-27 2015-01-15 Carl Zeiss Smt Gmbh Oberflächenkorrektur von Spiegeln mit Entkopplungsbeschichtung
EP3018698B1 (de) * 2013-07-05 2020-04-22 Nikon Corporation Mehrschichtfilmreflektor, verfahren zur herstellung eines mehrschichtfilmreflektors, optisches projektionssystem, belichtungsvorrichtung und verfahren zur herstellung eines artikels
EP3049836A1 (de) * 2013-09-23 2016-08-03 Carl Zeiss SMT GmbH Mehrschichtiger spiegel
KR101986982B1 (ko) * 2016-04-15 2019-06-10 루미리즈 홀딩 비.브이. 광대역 미러
JP7237006B2 (ja) * 2017-03-02 2023-03-10 スリーエム イノベイティブ プロパティズ カンパニー 光学式キャリパ感度の低い動的反射カラーフィルム
DE102017206118A1 (de) 2017-04-10 2018-04-19 Carl Zeiss Smt Gmbh Reflektives optisches Element und optisches System
KR102653352B1 (ko) * 2017-06-21 2024-04-02 호야 가부시키가이샤 다층 반사막 부착 기판, 반사형 마스크 블랭크 및 반사형 마스크, 그리고 반도체 장치의 제조 방법
KR102852945B1 (ko) 2019-01-21 2025-09-02 에이지씨 가부시키가이샤 반사형 마스크 블랭크, 반사형 마스크, 및 반사형 마스크 블랭크의 제조 방법
KR102511751B1 (ko) 2019-11-05 2023-03-21 주식회사 에스앤에스텍 극자외선 리소그래피용 블랭크마스크 및 포토마스크
KR102525928B1 (ko) 2020-09-02 2023-04-28 주식회사 에스앤에스텍 극자외선용 반사형 블랭크 마스크 및 그 제조방법
CN116368409B (zh) * 2020-10-30 2026-03-31 西默有限公司 用于深紫外光源的光学部件
CN117091809B (zh) * 2023-08-23 2024-02-23 同济大学 一种间接标定窄带多层膜反射峰位的方法

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Also Published As

Publication number Publication date
US7440182B2 (en) 2008-10-21
KR101083466B1 (ko) 2011-11-16
US20060192147A1 (en) 2006-08-31
WO2005038886A1 (ja) 2005-04-28
US7706058B2 (en) 2010-04-27
EP1675164A4 (de) 2010-01-06
US7382527B2 (en) 2008-06-03
JP4466566B2 (ja) 2010-05-26
JPWO2005038886A1 (ja) 2007-11-22
US20080049307A1 (en) 2008-02-28
US20090097104A1 (en) 2009-04-16
EP1675164B1 (de) 2011-12-21
EP1675164A1 (de) 2006-06-28
EP1675164B2 (de) 2019-07-03
KR20070017476A (ko) 2007-02-12
HK1099603A1 (en) 2007-08-17

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