ATE539036T1 - Siliciumtragvorrichtung und vorrichtung zum erhitzen und schnellen abkühlen von silicium damit - Google Patents

Siliciumtragvorrichtung und vorrichtung zum erhitzen und schnellen abkühlen von silicium damit

Info

Publication number
ATE539036T1
ATE539036T1 AT07791951T AT07791951T ATE539036T1 AT E539036 T1 ATE539036 T1 AT E539036T1 AT 07791951 T AT07791951 T AT 07791951T AT 07791951 T AT07791951 T AT 07791951T AT E539036 T1 ATE539036 T1 AT E539036T1
Authority
AT
Austria
Prior art keywords
silicon
supporting
heating
pipe
rapidly cooling
Prior art date
Application number
AT07791951T
Other languages
English (en)
Inventor
Tsuyoshi Murai
Toshinori Konaka
Original Assignee
Teoss Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Teoss Co Ltd filed Critical Teoss Co Ltd
Application granted granted Critical
Publication of ATE539036T1 publication Critical patent/ATE539036T1/de

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B02—CRUSHING, PULVERISING, OR DISINTEGRATING; PREPARATORY TREATMENT OF GRAIN FOR MILLING
    • B02C—CRUSHING, PULVERISING, OR DISINTEGRATING IN GENERAL; MILLING GRAIN
    • B02C19/00—Other disintegrating devices or methods
    • B02C19/18—Use of auxiliary physical effects, e.g. ultrasonic waves or irradiation, for disintegrating
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
    • C30B35/002—Crucibles or containers

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Food Science & Technology (AREA)
  • Silicon Compounds (AREA)
  • Disintegrating Or Milling (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Furnace Housings, Linings, Walls, And Ceilings (AREA)
AT07791951T 2007-08-03 2007-08-03 Siliciumtragvorrichtung und vorrichtung zum erhitzen und schnellen abkühlen von silicium damit ATE539036T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2007/065278 WO2009019749A1 (ja) 2007-08-03 2007-08-03 シリコン支持装置およびこれを用いたシリコン加熱急冷装置

Publications (1)

Publication Number Publication Date
ATE539036T1 true ATE539036T1 (de) 2012-01-15

Family

ID=40340997

Family Applications (1)

Application Number Title Priority Date Filing Date
AT07791951T ATE539036T1 (de) 2007-08-03 2007-08-03 Siliciumtragvorrichtung und vorrichtung zum erhitzen und schnellen abkühlen von silicium damit

Country Status (8)

Country Link
US (1) US20100207312A1 (de)
EP (1) EP2062854B1 (de)
JP (1) JP4294087B2 (de)
KR (1) KR101061398B1 (de)
AT (1) ATE539036T1 (de)
RU (1) RU2009107892A (de)
TW (1) TWI446969B (de)
WO (1) WO2009019749A1 (de)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5198169B2 (ja) * 2008-07-09 2013-05-15 株式会社テオス シリコン加熱炉及びこれを用いたシリコン破砕装置
MY155554A (en) 2009-07-28 2015-10-30 Mitsubishi Materials Corp Method of generating cracks in polycrystalline silicon rod and crack generating apparatus
KR20140071381A (ko) 2011-09-29 2014-06-11 쵸슈 산교 가부시키가이샤 원료 실리콘 파쇄 장치
CN102489372B (zh) * 2011-12-12 2013-09-04 湖南顶立科技有限公司 多晶硅棒破碎方法及设备
CN102586866A (zh) * 2012-02-09 2012-07-18 上海施科特光电材料有限公司 在采用导模法生长片状蓝宝石过程中抑制气泡的方法
CN103599835B (zh) * 2013-11-20 2016-06-15 宁夏宁电光伏材料有限公司 一种硅块破碎方法
CN108405035B (zh) * 2018-02-26 2020-07-28 亚洲硅业(青海)股份有限公司 一种多晶硅棒破碎装置及方法
CN110180659A (zh) * 2019-07-03 2019-08-30 山东澳联新材料有限公司 硅料微波加热装置

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3811091A1 (de) * 1988-03-31 1989-10-12 Heliotronic Gmbh Verfahren zum kontaminationsarmen zerkleinern von massivem stueckigem silicium
JP3805134B2 (ja) * 1999-05-25 2006-08-02 東陶機器株式会社 絶縁性基板吸着用静電チャック
KR100709801B1 (ko) * 1999-11-17 2007-04-23 동경 엘렉트론 주식회사 프리코트막의 형성방법, 성막장치의 아이들링 방법,재치대 구조, 성막장치 및 성막방법
US6632280B2 (en) * 2000-01-31 2003-10-14 Shin-Etsu Handotai Co., Ltd. Apparatus for growing single crystal, method for producing single crystal utilizing the apparatus and single crystal
JP4158386B2 (ja) * 2002-02-28 2008-10-01 東京エレクトロン株式会社 冷却装置及びこれを用いた熱処理装置
JP2004131373A (ja) * 2002-09-09 2004-04-30 Corning Inc シリカ・チタニア極端紫外線光学素子の製造方法
JP4340963B2 (ja) * 2003-10-01 2009-10-07 株式会社 アイアイエスマテリアル スクラップシリコン塊の破砕方法
US7824498B2 (en) * 2004-02-24 2010-11-02 Applied Materials, Inc. Coating for reducing contamination of substrates during processing
JP2005288332A (ja) 2004-03-31 2005-10-20 Mitsubishi Materials Polycrystalline Silicon Corp 多結晶シリコンロッドの破砕方法
US20050217799A1 (en) * 2004-03-31 2005-10-06 Tokyo Electron Limited Wafer heater assembly

Also Published As

Publication number Publication date
KR20100057472A (ko) 2010-05-31
TWI446969B (zh) 2014-08-01
EP2062854A4 (de) 2010-11-03
TW200906491A (en) 2009-02-16
US20100207312A1 (en) 2010-08-19
EP2062854B1 (de) 2011-12-28
EP2062854A1 (de) 2009-05-27
KR101061398B1 (ko) 2011-09-02
RU2009107892A (ru) 2013-03-20
JPWO2009019749A1 (ja) 2010-10-28
WO2009019749A1 (ja) 2009-02-12
JP4294087B2 (ja) 2009-07-08

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