ATE539180T1 - Sioc:h-beschichtete substrate und herstellungsverfahren dafür - Google Patents

Sioc:h-beschichtete substrate und herstellungsverfahren dafür

Info

Publication number
ATE539180T1
ATE539180T1 AT05786627T AT05786627T ATE539180T1 AT E539180 T1 ATE539180 T1 AT E539180T1 AT 05786627 T AT05786627 T AT 05786627T AT 05786627 T AT05786627 T AT 05786627T AT E539180 T1 ATE539180 T1 AT E539180T1
Authority
AT
Austria
Prior art keywords
coated substrates
sioc
production process
coated
preparing
Prior art date
Application number
AT05786627T
Other languages
English (en)
Inventor
Mark Loboda
Steven Snow
William Weidner
Ludmil Zambov
Original Assignee
Dow Corning
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=35448182&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=ATE539180(T1) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Dow Corning filed Critical Dow Corning
Application granted granted Critical
Publication of ATE539180T1 publication Critical patent/ATE539180T1/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/401—Oxides containing silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
    • H10P14/662—Laminate layers, e.g. stacks of alternating high-k metal oxides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
    • H10P14/668—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials
    • H10P14/6681—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si
    • H10P14/6682—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si the compound being a silane, e.g. disilane, methylsilane or chlorosilane
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
    • H10P14/668—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials
    • H10P14/6681—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si
    • H10P14/6684—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si the compound comprising silicon and oxygen
    • H10P14/6686—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si the compound comprising silicon and oxygen the compound being a molecule comprising at least one silicon-oxygen bond and the compound having hydrogen or an organic group attached to the silicon or oxygen, e.g. a siloxane
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H10P14/6336—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/6903—Inorganic materials containing silicon
    • H10P14/6905—Inorganic materials containing silicon being a silicon carbide or silicon carbonitride and not containing oxygen, e.g. SiC or SiC:H
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/6922—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24942—Structurally defined web or sheet [e.g., overall dimension, etc.] including components having same physical characteristic in differing degree
    • Y10T428/24992—Density or compression of components
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/249921—Web or sheet containing structurally defined element or component

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Laminated Bodies (AREA)
AT05786627T 2004-08-18 2005-08-12 Sioc:h-beschichtete substrate und herstellungsverfahren dafür ATE539180T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US60240404P 2004-08-18 2004-08-18
PCT/US2005/028955 WO2006023437A2 (en) 2004-08-18 2005-08-12 Sioc:h coated substrates and methods for their preparation

Publications (1)

Publication Number Publication Date
ATE539180T1 true ATE539180T1 (de) 2012-01-15

Family

ID=35448182

Family Applications (1)

Application Number Title Priority Date Filing Date
AT05786627T ATE539180T1 (de) 2004-08-18 2005-08-12 Sioc:h-beschichtete substrate und herstellungsverfahren dafür

Country Status (6)

Country Link
US (1) US7622193B2 (de)
EP (1) EP1799877B2 (de)
JP (1) JP4987716B2 (de)
KR (1) KR101154215B1 (de)
AT (1) ATE539180T1 (de)
WO (1) WO2006023437A2 (de)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7736728B2 (en) * 2004-08-18 2010-06-15 Dow Corning Corporation Coated substrates and methods for their preparation
KR20090126273A (ko) * 2007-03-28 2009-12-08 다우 코닝 코포레이션 실리콘 및 탄소를 함유하는 장벽층의 롤투롤 플라즈마 화학 기상 증착법
TWI531276B (zh) * 2010-10-21 2016-04-21 行政院原子能委員會核能研究所 有機電激發光元件之封裝方法及其結構
JP5838744B2 (ja) * 2010-12-15 2016-01-06 東ソー株式会社 炭素含有酸化ケイ素膜、封止膜及びその用途
BR112013015633A2 (pt) * 2010-12-28 2016-10-11 Kirin Brewery produto de plástico moldado de barreira de gás e método para produzir um produto de plástico moldado de barreira de gás
JP2012179762A (ja) * 2011-02-28 2012-09-20 Nitto Denko Corp 透明ガスバリアフィルム、透明ガスバリアフィルムの製造方法、有機エレクトロルミネッセンス素子、太陽電池および薄膜電池
DE102011104730A1 (de) * 2011-06-16 2012-12-20 Khs Corpoplast Gmbh Verfahren zur Plasmabehandlung von Werkstücken sowie Werkstück mit Gasbarriereschicht
KR101382997B1 (ko) 2012-02-08 2014-04-08 현대자동차주식회사 코팅층 표면 처리 방법
US9214577B2 (en) 2012-02-28 2015-12-15 International Business Machines Corporation Reduced light degradation due to low power deposition of buffer layer
US20140217408A1 (en) * 2013-02-06 2014-08-07 International Business Machines Corporaton Buffer layer for high performing and low light degraded solar cells
US10134566B2 (en) 2013-07-24 2018-11-20 3M Innovative Properties Company Method of making a nanostructure and nanostructured articles
KR20210151999A (ko) 2013-07-26 2021-12-14 쓰리엠 이노베이티브 프로퍼티즈 캄파니 나노구조체의 제조 방법 및 나노구조화 물품
US20170125241A1 (en) * 2015-10-30 2017-05-04 Applied Materials, Inc. Low temp single precursor arc hard mask for multilayer patterning application
JP6430982B2 (ja) * 2016-03-18 2018-11-28 株式会社麗光 透明ハイバリアフイルム
CN108878363B (zh) 2017-05-12 2021-07-13 中芯国际集成电路制造(上海)有限公司 半导体结构及其形成方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
MX9303141A (es) 1992-05-28 1994-04-29 Polar Materials Inc Metodos y aparatos para depositar recubrimientos de barrera.
DE4404690A1 (de) * 1994-02-15 1995-08-17 Leybold Ag Verfahren zur Erzeugung von Sperrschichten für Gase und Dämpfe auf Kunststoff-Substraten
CN1074006C (zh) 1995-10-13 2001-10-31 陶氏化学公司 涂覆的塑料基材
US6667553B2 (en) * 1998-05-29 2003-12-23 Dow Corning Corporation H:SiOC coated substrates
US6159871A (en) 1998-05-29 2000-12-12 Dow Corning Corporation Method for producing hydrogenated silicon oxycarbide films having low dielectric constant
JP3545364B2 (ja) † 2000-12-19 2004-07-21 キヤノン販売株式会社 半導体装置及びその製造方法
CN1524291A (zh) 2001-01-03 2004-08-25 金属离子扩散阻挡层
JP2004526318A (ja) * 2001-03-23 2004-08-26 ダウ・コーニング・コーポレイション 水素化シリコンオキシカーバイド膜を生産するための方法
WO2003015129A2 (en) * 2001-08-06 2003-02-20 Advanced Technology Material, Inc. Low-k dielectric thin films and chemical vapor deposition method of making same
JP4338495B2 (ja) * 2002-10-30 2009-10-07 富士通マイクロエレクトロニクス株式会社 シリコンオキシカーバイド、半導体装置、および半導体装置の製造方法
US20040197474A1 (en) * 2003-04-01 2004-10-07 Vrtis Raymond Nicholas Method for enhancing deposition rate of chemical vapor deposition films
JP4864307B2 (ja) * 2003-09-30 2012-02-01 アイメック エアーギャップを選択的に形成する方法及び当該方法により得られる装置
US6878616B1 (en) * 2003-11-21 2005-04-12 International Business Machines Corporation Low-k dielectric material system for IC application

Also Published As

Publication number Publication date
WO2006023437A2 (en) 2006-03-02
WO2006023437A3 (en) 2006-04-13
US20070248768A1 (en) 2007-10-25
EP1799877B1 (de) 2011-12-28
JP4987716B2 (ja) 2012-07-25
US7622193B2 (en) 2009-11-24
JP2008510074A (ja) 2008-04-03
EP1799877A2 (de) 2007-06-27
KR101154215B1 (ko) 2012-06-18
EP1799877B2 (de) 2016-04-20
KR20070051278A (ko) 2007-05-17

Similar Documents

Publication Publication Date Title
TW200721312A (en) Semiconductor on glass insulator with deposited barrier layer
AU2002315652A1 (en) Functional ceramic layers based on a support layer produced with crystalline nanoparticles
TW200721327A (en) Semiconductor device and method of manufacturing the same
EP1635396A4 (de) Laminiertes halbleitersubstrat und prozess zu seiner herstellung
WO2008063337A3 (en) Semiconductor-on-diamond devices and associated methods
FR2844364B1 (fr) Substrat diffusant
EP1972598A4 (de) Siliciumdioixd-mikrohohlteilchen, zusammensetzung zur bildung einer transparenten beschichtung damit und substrat mit transparenter beschichtung
ATE435841T1 (de) Wärmebehandelbarer beschichteter gegenstand mit beschichtung aus diamantähnlichem kohlenstoff (dlc)
TW200619345A (en) Methods of coating semiconductor light emitting elements by evaporating solvent from a suspension
EP2171771A4 (de) Ein auf kohlenstoff basierendes substrat enthaltende ingaaln-leuchtanordnung und verfahren zu ihrer herstellung
EP2011157A4 (de) Elektronische vorrichtungen mit acen-thiophen-copolymeren mit silylethynylgruppen
TW200733350A (en) Efuse and methods of manufacturing the same
TW200703461A (en) Glass-based semiconductor on insulator structures and methods of making same
TW200605163A (en) Fabrication of crystalline materials over substrates
GB0220438D0 (en) Formation of lattice-turning semiconductor substrates
SG116648A1 (en) Surface protecting film for semiconductor wafer and method of protecting semiconductor wafer using the same.
TW200625529A (en) Contact hole structures and contact structures and fabrication methods thereof
WO2006023437A3 (en) Sioc:h coated substrates and methods for their preparation
EP2088628A4 (de) Siliziumcarbidhalbleiterbauelement und herstellungsverfahren dafür
CA2356229A1 (en) A method for fabricating a sic film and a method for fabricating a sic multi-layered film structure
DE60209064D1 (de) Siliziumhalbleitersubstrat und Vefahren zu seiner Herstellung
FR2872343B1 (fr) Substrat semi-conducteur et son procede de preparation
TW200608418A (en) Thin-film material and the production process thereof
DE60136552D1 (de) Temporäre schutzverkleidungen
GB0304623D0 (en) Methods for the fabrication of nanoscale structures and semiconductor devices