ATE540461T1 - Adaptiver schutz vor elektrostatischer entladung einer geräteschnittstelle für einen local interconnect network (lin)-bus und dergleichen - Google Patents

Adaptiver schutz vor elektrostatischer entladung einer geräteschnittstelle für einen local interconnect network (lin)-bus und dergleichen

Info

Publication number
ATE540461T1
ATE540461T1 AT08852419T AT08852419T ATE540461T1 AT E540461 T1 ATE540461 T1 AT E540461T1 AT 08852419 T AT08852419 T AT 08852419T AT 08852419 T AT08852419 T AT 08852419T AT E540461 T1 ATE540461 T1 AT E540461T1
Authority
AT
Austria
Prior art keywords
dpi
electrostatic discharge
device interface
esd
lin
Prior art date
Application number
AT08852419T
Other languages
English (en)
Inventor
Philippe Deval
Patrick Besseux
Randy Yach
Original Assignee
Microchip Tech Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Microchip Tech Inc filed Critical Microchip Tech Inc
Application granted granted Critical
Publication of ATE540461T1 publication Critical patent/ATE540461T1/de

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H10D89/811Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using FETs as protective elements
    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02HEMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
    • H02H9/00Emergency protective circuit arrangements for limiting excess current or voltage without disconnection
    • H02H9/04Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage
    • H02H9/045Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage adapted to a particular application and not provided for elsewhere
    • H02H9/046Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage adapted to a particular application and not provided for elsewhere responsive to excess voltage appearing at terminals of integrated circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
AT08852419T 2007-11-21 2008-11-21 Adaptiver schutz vor elektrostatischer entladung einer geräteschnittstelle für einen local interconnect network (lin)-bus und dergleichen ATE540461T1 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US98951407P 2007-11-21 2007-11-21
US12/174,802 US7876540B2 (en) 2007-11-21 2008-07-17 Adaptive electrostatic discharge (ESD) protection of device interface for local interconnect network (LIN) bus and the like
PCT/US2008/084365 WO2009067673A2 (en) 2007-11-21 2008-11-21 Adaptive electrostatic discharge (esd) protection of device interface for local interconnect network (lin) bus and the like

Publications (1)

Publication Number Publication Date
ATE540461T1 true ATE540461T1 (de) 2012-01-15

Family

ID=40641690

Family Applications (2)

Application Number Title Priority Date Filing Date
AT08851188T ATE540460T1 (de) 2007-11-21 2008-11-21 Adaptiver schutz vor elektrostatischer entladung einer geräteschnittstelle für einen local interconnect network (lin)-bus und ähnliches
AT08852419T ATE540461T1 (de) 2007-11-21 2008-11-21 Adaptiver schutz vor elektrostatischer entladung einer geräteschnittstelle für einen local interconnect network (lin)-bus und dergleichen

Family Applications Before (1)

Application Number Title Priority Date Filing Date
AT08851188T ATE540460T1 (de) 2007-11-21 2008-11-21 Adaptiver schutz vor elektrostatischer entladung einer geräteschnittstelle für einen local interconnect network (lin)-bus und ähnliches

Country Status (7)

Country Link
US (2) US7885047B2 (de)
EP (2) EP2212981B1 (de)
KR (2) KR101576261B1 (de)
CN (2) CN101842955B (de)
AT (2) ATE540460T1 (de)
TW (2) TWI435436B (de)
WO (2) WO2009067673A2 (de)

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JP2011507477A (ja) * 2007-12-21 2011-03-03 エスティー‐エリクソン、ソシエテ、アノニム Dc−dcコンバータを有する集積回路
TW200937607A (en) * 2008-02-27 2009-09-01 Elan Microelectronics Corp Electrostatic discharge (ESD) protection device for high-voltage input-output pad
US8390970B2 (en) * 2010-10-27 2013-03-05 Infineon Technologies Ag Method and system for electrostatic discharge protection
US8462473B2 (en) 2010-12-21 2013-06-11 Microchip Technology Incorporated Adaptive electrostatic discharge (ESD) protection circuit
DE102011109596B4 (de) 2011-08-05 2018-05-09 Austriamicrosystems Ag Schaltungsanordnung zum Schutz gegen elektrostatische Entladungen
US8576524B1 (en) * 2011-09-19 2013-11-05 Cypress Semiconductor Corporation Diode based ESD triggers
US8947844B2 (en) * 2012-05-14 2015-02-03 Middle Alantic Products, Inc. Series type surge suppressor and clamping circuit
DE102012108105A1 (de) 2012-08-31 2014-03-06 Ams Ag Schutzschaltung und Verfahren zum Schutz einer Schaltung
US9438030B2 (en) * 2012-11-20 2016-09-06 Freescale Semiconductor, Inc. Trigger circuit and method for improved transient immunity
US9762052B2 (en) 2013-03-15 2017-09-12 Taiwan Semiconductor Manufacturing Company, Ltd. Circuit and method of electrically decoupling nodes
CN104660244A (zh) * 2013-11-22 2015-05-27 天津市北海通信技术有限公司 一种网络接口及esd保护器件电路
TW201533880A (zh) * 2014-02-24 2015-09-01 Nuvoton Technology Corp 靜電放電保護電路及半導體元件
US9166646B1 (en) * 2014-08-25 2015-10-20 Nxp B.V. Transceiver circuit and method for operating a transceiver circuit
CN105357092B (zh) * 2015-11-24 2019-01-18 上海爱斯达克汽车空调系统有限公司 一种汽车空调用旋钮Lin总线数据结构及通讯方法
US10079227B2 (en) 2016-02-26 2018-09-18 Texas Instruments Incorporated Apparatus for rectified RC trigger of back-to-back MOS-SCR ESD protection
WO2018119569A1 (en) * 2016-12-26 2018-07-05 Texas Instruments Incorporated Dynamically triggered electrostatic discharge cell
US10892756B2 (en) * 2017-12-26 2021-01-12 Texas Instruments Incorporated Reducing noise effects in electrostatic discharge circuits
CN109742745B (zh) * 2018-12-29 2020-04-10 长江存储科技有限责任公司 静电放电电路及集成电路
EP3742678B1 (de) 2019-05-24 2022-02-23 NXP USA, Inc. Integrierte schaltung mit schnittstellenschaltung für physikalische schicht
CN110518561B (zh) * 2019-07-26 2020-10-16 北京大学 一种电源钳位esd保护电路及集成电路结构
US10938387B1 (en) 2020-06-24 2021-03-02 Cypress Semiconductor Corporation Local interconnect network (LIN) driver circuit
US11586798B1 (en) 2021-08-13 2023-02-21 International Business Machines Corporation Avoiding electrostatic discharge events from cross-hierarchy tie nets
TWI813421B (zh) * 2022-08-19 2023-08-21 瑞昱半導體股份有限公司 用來模擬電子元件的崩潰的方法以及設備
TWI831372B (zh) * 2022-09-14 2024-02-01 英業達股份有限公司 一對多通訊電路
CN120152348B (zh) * 2025-03-21 2026-01-13 北京智芯微电子科技有限公司 Ldmosfet结构的esd器件及制造方法、芯片
CN120035177B (zh) * 2025-03-21 2026-01-06 北京智芯微电子科技有限公司 Ldmosfet结构的esd器件及制造方法、芯片

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US594177A (en) * 1897-11-23 Corset
TW351010B (en) 1998-02-12 1999-01-21 Winbond Electronics Corp Static discharge protective circuit for recording of static discharging
US5946177A (en) 1998-08-17 1999-08-31 Motorola, Inc. Circuit for electrostatic discharge protection
US6433983B1 (en) * 1999-11-24 2002-08-13 Honeywell Inc. High performance output buffer with ESD protection
US6597227B1 (en) * 2000-01-21 2003-07-22 Atheros Communications, Inc. System for providing electrostatic discharge protection for high-speed integrated circuits
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US7102862B1 (en) * 2002-10-29 2006-09-05 Integrated Device Technology, Inc. Electrostatic discharge protection circuit
US7187530B2 (en) 2002-12-27 2007-03-06 T-Ram Semiconductor, Inc. Electrostatic discharge protection circuit
DE112004001836D2 (de) * 2003-10-08 2006-08-24 Continental Teves Ag & Co Ohg Integriertes Mikroprozessorsystem für sicherheitskritische Regelungen
US20060250732A1 (en) * 2005-05-06 2006-11-09 Peachey Nathaniel M Transient pulse, substrate-triggered biCMOS rail clamp for ESD abatement
CN100536132C (zh) * 2005-06-20 2009-09-02 昂宝电子(上海)有限公司 对多种电压下的信号的静电放电保护系统与方法
US7660086B2 (en) * 2006-06-08 2010-02-09 Cypress Semiconductor Corporation Programmable electrostatic discharge (ESD) protection device
US7495878B2 (en) * 2007-03-22 2009-02-24 Bae Systems Information And Electronic Systems Integration Inc. Decoupling capacitor control circuit and method for enhanced ESD performance

Also Published As

Publication number Publication date
CN101842954B (zh) 2013-06-12
WO2009067673A2 (en) 2009-05-28
US20090128970A1 (en) 2009-05-21
US7885047B2 (en) 2011-02-08
TWI455433B (zh) 2014-10-01
TW200937617A (en) 2009-09-01
TW200937790A (en) 2009-09-01
EP2212981A2 (de) 2010-08-04
KR101576261B1 (ko) 2015-12-09
CN101842955B (zh) 2013-03-06
KR20100090760A (ko) 2010-08-17
ATE540460T1 (de) 2012-01-15
KR20100075979A (ko) 2010-07-05
US7876540B2 (en) 2011-01-25
CN101842955A (zh) 2010-09-22
KR101467441B1 (ko) 2014-12-01
WO2009067673A3 (en) 2009-07-09
EP2212982A2 (de) 2010-08-04
EP2212982B1 (de) 2012-01-04
EP2212981B1 (de) 2012-01-04
WO2009067672A2 (en) 2009-05-28
CN101842954A (zh) 2010-09-22
US20090128969A1 (en) 2009-05-21
WO2009067672A3 (en) 2009-07-09
TWI435436B (zh) 2014-04-21

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