ATE541065T1 - Verfahren zur herstellung von dünnschichten und vorrichtungen - Google Patents

Verfahren zur herstellung von dünnschichten und vorrichtungen

Info

Publication number
ATE541065T1
ATE541065T1 AT04076889T AT04076889T ATE541065T1 AT E541065 T1 ATE541065 T1 AT E541065T1 AT 04076889 T AT04076889 T AT 04076889T AT 04076889 T AT04076889 T AT 04076889T AT E541065 T1 ATE541065 T1 AT E541065T1
Authority
AT
Austria
Prior art keywords
film
thin film
filaments
formation apparatus
stationary
Prior art date
Application number
AT04076889T
Other languages
English (en)
Inventor
Rudolf Emmanuel Insidore Schropp
Der Werf Catharina Henriette Maria Van
Bernd Stannowski
Original Assignee
Univ Utrecht Holding Bv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Univ Utrecht Holding Bv filed Critical Univ Utrecht Holding Bv
Application granted granted Critical
Publication of ATE541065T1 publication Critical patent/ATE541065T1/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/34—Nitrides
    • C23C16/345—Silicon nitride
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4409—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber characterised by sealing means
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)
  • Thin Film Transistor (AREA)
AT04076889T 2004-03-12 2004-06-30 Verfahren zur herstellung von dünnschichten und vorrichtungen ATE541065T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP04075801 2004-03-12

Publications (1)

Publication Number Publication Date
ATE541065T1 true ATE541065T1 (de) 2012-01-15

Family

ID=34961019

Family Applications (1)

Application Number Title Priority Date Filing Date
AT04076889T ATE541065T1 (de) 2004-03-12 2004-06-30 Verfahren zur herstellung von dünnschichten und vorrichtungen

Country Status (6)

Country Link
US (1) US7871940B2 (de)
EP (1) EP1574597B1 (de)
JP (1) JP2007528940A (de)
KR (1) KR20070010026A (de)
AT (1) ATE541065T1 (de)
WO (1) WO2005095669A1 (de)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20100100958A (ko) * 2007-12-27 2010-09-15 엑사테크 엘.엘.씨. 멀티-패스 진공 코팅 시스템
CN102007597B (zh) * 2008-04-17 2014-02-19 应用材料公司 低温薄膜晶体管工艺、装置特性和装置稳定性改进
EP2294808B1 (de) * 2008-06-20 2013-05-01 Hewlett-Packard Development Company, L.P. Verfahren und system zur effizienten videoverarbeitung
DE102010000447A1 (de) * 2010-02-17 2011-08-18 Aixtron Ag, 52134 Beschichtungsvorrichtung sowie Verfahren zum Betrieb einer Beschichtungsvorrichtung mit einer Schirmplatte
WO2012077547A1 (ja) * 2010-12-09 2012-06-14 東京エレクトロン株式会社 ロードロック装置
KR102193180B1 (ko) 2015-01-13 2020-12-21 삼성디스플레이 주식회사 박막 트랜지스터 표시판
DE102017103055A1 (de) 2017-02-15 2018-08-16 Aixtron Se Vorrichtung und Verfahren zur thermischen Behandlung eines Substrates mit einer gekühlten Schirmplatte
US20180308661A1 (en) * 2017-04-24 2018-10-25 Applied Materials, Inc. Plasma reactor with electrode filaments
TWI771083B (zh) * 2021-06-29 2022-07-11 天虹科技股份有限公司 具有對開式遮蔽構件的薄膜沉積設備
TWI777640B (zh) * 2021-06-29 2022-09-11 天虹科技股份有限公司 遮蔽機構及具有遮蔽機構的薄膜沉積腔體
CN115537763A (zh) * 2021-06-29 2022-12-30 鑫天虹(厦门)科技有限公司 开合式遮蔽构件及具有开合式遮蔽构件的薄膜沉积机台
TWI773411B (zh) * 2021-06-29 2022-08-01 天虹科技股份有限公司 遮蔽裝置及具有遮蔽裝置的薄膜沉積設備

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0408216A3 (en) * 1989-07-11 1991-09-18 Hitachi, Ltd. Method for processing wafers and producing semiconductor devices and apparatus for producing the same
NL1004886C2 (nl) * 1996-12-23 1998-06-24 Univ Utrecht Halfgeleiderinrichtingen en werkwijze voor het maken daarvan.
US6432206B1 (en) * 1999-08-30 2002-08-13 Si Diamond Technology, Inc. Heating element for use in a hot filament chemical vapor deposition chamber
JP2002069646A (ja) * 2000-09-01 2002-03-08 Sony Corp 薄膜製造方法
JP2002069645A (ja) * 2000-09-01 2002-03-08 Sony Corp 薄膜および薄膜製造方法
JP2002110553A (ja) * 2000-09-28 2002-04-12 Fujitsu Ltd 触媒ｃｖｄ装置及び半導体装置の製造方法
JP4644964B2 (ja) * 2001-04-04 2011-03-09 ソニー株式会社 多結晶性半導体薄膜の形成方法、及び半導体装置の製造方法
JP2003023006A (ja) * 2001-07-09 2003-01-24 Sony Corp 絶縁膜形成方法、絶縁膜形成装置及び半導体装置
JP3868324B2 (ja) * 2002-04-15 2007-01-17 三菱電機株式会社 シリコン窒化膜の成膜方法、成膜装置、及び半導体装置の製造方法
US7300890B1 (en) * 2003-07-17 2007-11-27 Midwest Research Institute Method and apparatus for forming conformal SiNx films

Also Published As

Publication number Publication date
EP1574597B1 (de) 2012-01-11
EP1574597A1 (de) 2005-09-14
US20080128871A1 (en) 2008-06-05
WO2005095669A1 (en) 2005-10-13
KR20070010026A (ko) 2007-01-19
JP2007528940A (ja) 2007-10-18
US7871940B2 (en) 2011-01-18

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