ATE541074T1 - Verfahren zur herstellung von einem gan-kristall und vorrichtung zur herstellung von einem gan- kristall - Google Patents

Verfahren zur herstellung von einem gan-kristall und vorrichtung zur herstellung von einem gan- kristall

Info

Publication number
ATE541074T1
ATE541074T1 AT07831865T AT07831865T ATE541074T1 AT E541074 T1 ATE541074 T1 AT E541074T1 AT 07831865 T AT07831865 T AT 07831865T AT 07831865 T AT07831865 T AT 07831865T AT E541074 T1 ATE541074 T1 AT E541074T1
Authority
AT
Austria
Prior art keywords
producing
gan crystal
nucleation
gallium
polar surface
Prior art date
Application number
AT07831865T
Other languages
English (en)
Inventor
Yusuke Mori
Takatomo Sasaki
Fumio Kawamura
Masashi Yoshimura
Minoru Kawahara
Yasuo Kitaoka
Masanori Morishita
Original Assignee
Univ Osaka
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Univ Osaka filed Critical Univ Osaka
Application granted granted Critical
Publication of ATE541074T1 publication Critical patent/ATE541074T1/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C30B29/406—Gallium nitride
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/02—Liquid-phase epitaxial-layer growth using molten solvents, e.g. flux
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
AT07831865T 2006-11-14 2007-11-14 Verfahren zur herstellung von einem gan-kristall und vorrichtung zur herstellung von einem gan- kristall ATE541074T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2006308170 2006-11-14
PCT/JP2007/072135 WO2008059901A1 (en) 2006-11-14 2007-11-14 PROCESS FOR PRODUCTION OF GaN CRYSTALS, GaN CRYSTALS, GaN CRYSTAL SUBSTRATE, SEMICONDUCTOR DEVICES, AND APPARATUS FOR PRODUCTION OF GaN CRYSTALS

Publications (1)

Publication Number Publication Date
ATE541074T1 true ATE541074T1 (de) 2012-01-15

Family

ID=39401705

Family Applications (1)

Application Number Title Priority Date Filing Date
AT07831865T ATE541074T1 (de) 2006-11-14 2007-11-14 Verfahren zur herstellung von einem gan-kristall und vorrichtung zur herstellung von einem gan- kristall

Country Status (7)

Country Link
US (1) US8187507B2 (de)
EP (1) EP2103721B1 (de)
JP (2) JP4538596B2 (de)
KR (1) KR101192061B1 (de)
CN (1) CN101583745B (de)
AT (1) ATE541074T1 (de)
WO (1) WO2008059901A1 (de)

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JP5116632B2 (ja) * 2008-10-30 2013-01-09 パナソニック株式会社 Ｉｉｉ族元素窒化物結晶の製造方法
JP5310257B2 (ja) * 2009-05-21 2013-10-09 株式会社リコー 窒化物結晶製造方法
JP5039813B2 (ja) * 2009-08-31 2012-10-03 日本碍子株式会社 Ｚｎがドープされた３Ｂ族窒化物結晶、その製法及び電子デバイス
JP2012012259A (ja) * 2010-07-01 2012-01-19 Ricoh Co Ltd 窒化物結晶およびその製造方法
RU2477766C1 (ru) * 2011-09-22 2013-03-20 Общество С Ограниченной Ответственностью "Инновационное Научно-Производственное Предприятие "Кристалл" Способ выращивания монокристаллов нитрида галлия
JP5754391B2 (ja) * 2012-02-08 2015-07-29 豊田合成株式会社 Ｉｉｉ族窒化物半導体結晶の製造方法
CN104205297B (zh) * 2012-03-21 2018-06-15 首尔伟傲世有限公司 制造非极性氮化镓基半导体层的方法、非极性半导体器件及其制造方法
CN103219436B (zh) * 2013-03-27 2015-09-02 上海萃智科技发展有限公司 LED用非极性GaN外延片的制备工艺
WO2015025931A1 (ja) 2013-08-22 2015-02-26 日本碍子株式会社 １３族元素窒化物の製造方法および融液組成物
WO2015137266A1 (ja) 2014-03-10 2015-09-17 日本碍子株式会社 窒化物結晶の製造方法
CN104445108A (zh) * 2014-11-28 2015-03-25 中国科学院物理研究所 GaN微晶及其合成方法
JP2015078121A (ja) * 2014-12-12 2015-04-23 株式会社リコー 窒化物結晶およびその製造方法
CN107002287B (zh) 2014-12-26 2019-08-16 日本碍子株式会社 13族元素氮化物结晶的培养方法及装置
EP3247824A1 (de) * 2015-01-22 2017-11-29 SixPoint Materials, Inc. Impfkristallauswahl und wachstumsverfahren für gruppe-iii-nitrid-massenkristalle mit verminderter rissbildung
CN104862781B (zh) * 2015-06-04 2017-08-04 北京大学东莞光电研究院 一种ⅲ族氮化物晶体的生长方法
JP6547506B2 (ja) * 2015-08-05 2019-07-24 三菱ケミカル株式会社 窒化物半導体結晶の製造方法
CN105780124B (zh) * 2016-03-12 2018-05-22 东莞市中镓半导体科技有限公司 一种激光辅助iii-v族晶体生长装置及方法
JP6222292B2 (ja) * 2016-06-14 2017-11-01 株式会社リコー 窒化ガリウム結晶、１３族窒化物結晶の製造方法および１３族窒化物結晶基板
CN107687022A (zh) * 2016-08-04 2018-02-13 中国科学院苏州纳米技术与纳米仿生研究所 助熔剂法生长GaN单晶体系中促进籽晶液相外延的方法
JP6841191B2 (ja) * 2016-09-06 2021-03-10 豊田合成株式会社 Ｉｉｉ族窒化物半導体の製造方法
JP2018043891A (ja) * 2016-09-12 2018-03-22 デクセリアルズ株式会社 窒化ガリウム積層体の製造方法
US11162189B2 (en) * 2018-03-02 2021-11-02 Dexerials Corporation Semiconductor substrate, gallium nitride single crystal, and method for producing gallium nitride single crystal
JP7072769B2 (ja) 2018-03-02 2022-05-23 国立大学法人大阪大学 Ｉｉｉ族窒化物結晶の製造方法
JP7221493B2 (ja) 2019-02-18 2023-02-14 国立大学法人大阪大学 Ｉｉｉ族窒化物結晶の製造方法
JP7264343B2 (ja) 2019-02-20 2023-04-25 パナソニックホールディングス株式会社 Ｉｉｉ族窒化物結晶の製造方法および種基板
JP7226026B2 (ja) * 2019-03-30 2023-02-21 豊田合成株式会社 Ｉｉｉ族窒化物半導体素子の製造方法およびｉｉｉ族窒化物半導体単結晶の製造方法
CN111807315B (zh) * 2020-07-20 2023-10-03 中国科学院长春光学精密机械与物理研究所 一种导电氧化物等离激元纳米光学天线及其制备方法

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JP3957918B2 (ja) 1999-05-17 2007-08-15 独立行政法人科学技術振興機構 窒化ガリウム単結晶の育成方法
JP3929657B2 (ja) 1999-09-29 2007-06-13 株式会社リコー 結晶成長方法およびｉｉｉ族窒化物結晶の製造方法
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WO2003089695A1 (en) 2002-04-15 2003-10-30 The Regents Of The University Of California Non-polar a-plane gallium nitride thin films grown by metalorganic chemical vapor deposition
AU2003246117A1 (en) * 2002-07-31 2004-02-23 Osaka Industrial Promotion Organization Method for producing group iii element nitride single crystal and group iii element nitride transparent single crystal prepared thereby
JP2004083653A (ja) * 2002-08-23 2004-03-18 Sharp Corp 発光装置ならびに蛍光体およびその製造方法
EP1576671A4 (de) 2002-12-16 2006-10-25 Univ California Wachstum von planarem, nichtpolarem a-ebenem galliumnitrid durch hydriddampffasenepitaxy
US7427555B2 (en) * 2002-12-16 2008-09-23 The Regents Of The University Of California Growth of planar, non-polar gallium nitride by hydride vapor phase epitaxy
US7959729B2 (en) 2003-03-17 2011-06-14 Osaka University Method for producing group-III-element nitride single crystals and apparatus used therein
US7176115B2 (en) * 2003-03-20 2007-02-13 Matsushita Electric Industrial Co., Ltd. Method of manufacturing Group III nitride substrate and semiconductor device
US7309534B2 (en) * 2003-05-29 2007-12-18 Matsushita Electric Industrial Co., Ltd. Group III nitride crystals usable as group III nitride substrate, method of manufacturing the same, and semiconductor device including the same
US7227172B2 (en) * 2003-10-20 2007-06-05 Matsushita Electric Industrial Co., Ltd. Group-III-element nitride crystal semiconductor device
JP2006290677A (ja) 2005-04-11 2006-10-26 Hitachi Cable Ltd 窒化物系化合物半導体結晶の製造方法及び窒化物系化合物半導体基板の製造方法
JP4513749B2 (ja) 2006-01-04 2010-07-28 住友金属工業株式会社 単結晶の製造方法
JP4821007B2 (ja) * 2007-03-14 2011-11-24 国立大学法人大阪大学 Ｉｉｉ族元素窒化物結晶の製造方法およびｉｉｉ族元素窒化物結晶

Also Published As

Publication number Publication date
KR20090082475A (ko) 2009-07-30
EP2103721A4 (de) 2010-11-17
JP4538596B2 (ja) 2010-09-08
EP2103721B1 (de) 2012-01-11
KR101192061B1 (ko) 2012-10-17
EP2103721A1 (de) 2009-09-23
JP2010189270A (ja) 2010-09-02
JP5305359B2 (ja) 2013-10-02
US8187507B2 (en) 2012-05-29
CN101583745A (zh) 2009-11-18
JPWO2008059901A1 (ja) 2010-03-04
WO2008059901A1 (en) 2008-05-22
US20100059717A1 (en) 2010-03-11
CN101583745B (zh) 2012-07-25

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