ATE543204T1 - Ätzung mit hohem seitenverhältnis durch verwendung einer modulation von rf-leistungen mit verschiedenen frequenzen - Google Patents

Ätzung mit hohem seitenverhältnis durch verwendung einer modulation von rf-leistungen mit verschiedenen frequenzen

Info

Publication number
ATE543204T1
ATE543204T1 AT04780271T AT04780271T ATE543204T1 AT E543204 T1 ATE543204 T1 AT E543204T1 AT 04780271 T AT04780271 T AT 04780271T AT 04780271 T AT04780271 T AT 04780271T AT E543204 T1 ATE543204 T1 AT E543204T1
Authority
AT
Austria
Prior art keywords
frequency
aspect ratio
high aspect
powers
modulation
Prior art date
Application number
AT04780271T
Other languages
English (en)
Inventor
Camelia Rusu
Rajinder Dhindsa
Eric Hudson
Mukund Srinivasan
Lumin Li
Felix Kozakevich
Original Assignee
Lam Res Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US10/645,665 external-priority patent/US7405521B2/en
Application filed by Lam Res Corp filed Critical Lam Res Corp
Application granted granted Critical
Publication of ATE543204T1 publication Critical patent/ATE543204T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32155—Frequency modulation
    • H01J37/32165—Plural frequencies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32155—Frequency modulation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0421—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H01J2237/3343—Problems associated with etching
    • H01J2237/3347—Problems associated with etching bottom of holes or trenches

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Weting (AREA)
AT04780271T 2003-08-22 2004-08-06 Ätzung mit hohem seitenverhältnis durch verwendung einer modulation von rf-leistungen mit verschiedenen frequenzen ATE543204T1 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/645,665 US7405521B2 (en) 2003-08-22 2003-08-22 Multiple frequency plasma processor method and apparatus
US10/737,022 US7144521B2 (en) 2003-08-22 2003-12-15 High aspect ratio etch using modulation of RF powers of various frequencies
PCT/US2004/025406 WO2005022623A1 (en) 2003-08-22 2004-08-06 High aspect ratio etch using modulation of rf powers of various frequencies

Publications (1)

Publication Number Publication Date
ATE543204T1 true ATE543204T1 (de) 2012-02-15

Family

ID=34279052

Family Applications (1)

Application Number Title Priority Date Filing Date
AT04780271T ATE543204T1 (de) 2003-08-22 2004-08-06 Ätzung mit hohem seitenverhältnis durch verwendung einer modulation von rf-leistungen mit verschiedenen frequenzen

Country Status (9)

Country Link
US (2) US7144521B2 (de)
EP (1) EP1656694B1 (de)
JP (2) JP2007503709A (de)
KR (1) KR101116586B1 (de)
AT (1) ATE543204T1 (de)
IL (2) IL173861A (de)
SG (1) SG130195A1 (de)
TW (1) TWI346358B (de)
WO (1) WO2005022623A1 (de)

Families Citing this family (75)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070066038A1 (en) 2004-04-30 2007-03-22 Lam Research Corporation Fast gas switching plasma processing apparatus
US7708859B2 (en) 2004-04-30 2010-05-04 Lam Research Corporation Gas distribution system having fast gas switching capabilities
US7723238B2 (en) * 2004-06-16 2010-05-25 Tokyo Electron Limited Method for preventing striation at a sidewall of an opening of a resist during an etching process
JP4550507B2 (ja) * 2004-07-26 2010-09-22 株式会社日立ハイテクノロジーズ プラズマ処理装置
JP4588595B2 (ja) * 2005-09-15 2010-12-01 株式会社日立ハイテクノロジーズ プラズマ処理装置および処理方法
JP2007096214A (ja) * 2005-09-30 2007-04-12 Elpida Memory Inc 半導体装置の製造方法
US8608851B2 (en) * 2005-10-14 2013-12-17 Advanced Micro-Fabrication Equipment, Inc. Asia Plasma confinement apparatus, and method for confining a plasma
US8674255B1 (en) * 2005-12-08 2014-03-18 Lam Research Corporation Apparatus and method for controlling etch uniformity
US7683289B2 (en) * 2005-12-16 2010-03-23 Lam Research Corporation Apparatus and method for controlling plasma density profile
US8012306B2 (en) * 2006-02-15 2011-09-06 Lam Research Corporation Plasma processing reactor with multiple capacitive and inductive power sources
US7608195B2 (en) 2006-02-21 2009-10-27 Micron Technology, Inc. High aspect ratio contacts
US7893697B2 (en) * 2006-02-21 2011-02-22 Cyberoptics Semiconductor, Inc. Capacitive distance sensing in semiconductor processing tools
US7804306B2 (en) * 2006-02-21 2010-09-28 CyterOptics Semiconductor, Inc. Capacitive distance sensing in semiconductor processing tools
US7785753B2 (en) 2006-05-17 2010-08-31 Lam Research Corporation Method and apparatus for providing mask in semiconductor processing
US9184043B2 (en) * 2006-05-24 2015-11-10 Lam Research Corporation Edge electrodes with dielectric covers
CN101517701B (zh) 2006-09-29 2011-08-10 赛博光学半导体公司 衬底形的粒子传感器
JP5192209B2 (ja) * 2006-10-06 2013-05-08 東京エレクトロン株式会社 プラズマエッチング装置、プラズマエッチング方法およびコンピュータ読取可能な記憶媒体
US20080119055A1 (en) * 2006-11-21 2008-05-22 Lam Research Corporation Reducing twisting in ultra-high aspect ratio dielectric etch
US7884025B2 (en) * 2007-01-30 2011-02-08 Applied Materials, Inc. Plasma process uniformity across a wafer by apportioning ground return path impedances among plural VHF sources
US20080178803A1 (en) * 2007-01-30 2008-07-31 Collins Kenneth S Plasma reactor with ion distribution uniformity controller employing plural vhf sources
US7968469B2 (en) * 2007-01-30 2011-06-28 Applied Materials, Inc. Method of processing a workpiece in a plasma reactor with variable height ground return path to control plasma ion density uniformity
US7879731B2 (en) * 2007-01-30 2011-02-01 Applied Materials, Inc. Improving plasma process uniformity across a wafer by apportioning power among plural VHF sources
TW200849444A (en) * 2007-04-05 2008-12-16 Cyberoptics Semiconductor Inc Semiconductor processing system with integrated showerhead distance measuring device
CN101287327B (zh) 2007-04-13 2011-07-20 中微半导体设备(上海)有限公司 射频功率源系统及使用该射频功率源系统的等离子体反应腔室
US8283255B2 (en) * 2007-05-24 2012-10-09 Lam Research Corporation In-situ photoresist strip during plasma etching of active hard mask
US20090015268A1 (en) * 2007-07-13 2009-01-15 Gardner Delrae H Device and method for compensating a capacitive sensor measurement for variations caused by environmental conditions in a semiconductor processing environment
US20090065820A1 (en) * 2007-09-06 2009-03-12 Lu-Yang Kao Method and structure for simultaneously fabricating selective film and spacer
US8017526B2 (en) * 2007-11-30 2011-09-13 Applied Materials, Inc. Gate profile control through effective frequency of dual HF/VHF sources in a plasma etch process
US20090236214A1 (en) * 2008-03-20 2009-09-24 Karthik Janakiraman Tunable ground planes in plasma chambers
CN101978479A (zh) * 2008-03-21 2011-02-16 应用材料公司 基材蚀刻系统与制程的方法及设备
US8357264B2 (en) * 2008-05-29 2013-01-22 Applied Materials, Inc. Plasma reactor with plasma load impedance tuning for engineered transients by synchronized modulation of a source power or bias power RF generator
US8337661B2 (en) * 2008-05-29 2012-12-25 Applied Materials, Inc. Plasma reactor with plasma load impedance tuning for engineered transients by synchronized modulation of an unmatched low power RF generator
US8324525B2 (en) * 2008-05-29 2012-12-04 Applied Materials, Inc. Method of plasma load impedance tuning for engineered transients by synchronized modulation of a source power or bias power RF generator
US8659335B2 (en) 2009-06-25 2014-02-25 Mks Instruments, Inc. Method and system for controlling radio frequency power
US8753474B2 (en) * 2009-09-25 2014-06-17 Applied Materials, Inc. Method and apparatus for high efficiency gas dissociation in inductive couple plasma reactor
US8741394B2 (en) 2010-03-25 2014-06-03 Novellus Systems, Inc. In-situ deposition of film stacks
US20130059448A1 (en) * 2011-09-07 2013-03-07 Lam Research Corporation Pulsed Plasma Chamber in Dual Chamber Configuration
US9793126B2 (en) 2010-08-04 2017-10-17 Lam Research Corporation Ion to neutral control for wafer processing with dual plasma source reactor
US9117767B2 (en) 2011-07-21 2015-08-25 Lam Research Corporation Negative ion control for dielectric etch
JP6045646B2 (ja) * 2010-08-23 2016-12-14 東京エレクトロン株式会社 プラズマエッチング方法
JP2012142495A (ja) * 2011-01-05 2012-07-26 Ulvac Japan Ltd プラズマエッチング方法及びプラズマエッチング装置
US10225919B2 (en) * 2011-06-30 2019-03-05 Aes Global Holdings, Pte. Ltd Projected plasma source
JP6068462B2 (ja) 2011-06-30 2017-01-25 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 高速ガス交換、高速ガス切換、及びプログラミング可能なガス送出のための方法及び装置
US10224182B2 (en) 2011-10-17 2019-03-05 Novellus Systems, Inc. Mechanical suppression of parasitic plasma in substrate processing chamber
US8652298B2 (en) * 2011-11-21 2014-02-18 Lam Research Corporation Triode reactor design with multiple radiofrequency powers
US9083182B2 (en) 2011-11-21 2015-07-14 Lam Research Corporation Bypass capacitors for high voltage bias power in the mid frequency RF range
US9508530B2 (en) 2011-11-21 2016-11-29 Lam Research Corporation Plasma processing chamber with flexible symmetric RF return strap
US9396908B2 (en) 2011-11-22 2016-07-19 Lam Research Corporation Systems and methods for controlling a plasma edge region
US10586686B2 (en) 2011-11-22 2020-03-10 Law Research Corporation Peripheral RF feed and symmetric RF return for symmetric RF delivery
US9263240B2 (en) * 2011-11-22 2016-02-16 Lam Research Corporation Dual zone temperature control of upper electrodes
KR101971312B1 (ko) * 2011-11-23 2019-04-22 램 리써치 코포레이션 다중 존 가스 주입 상부 전극 시스템
US20130220975A1 (en) * 2012-02-27 2013-08-29 Rajinder Dhindsa Hybrid plasma processing systems
US8911588B2 (en) * 2012-03-19 2014-12-16 Lam Research Corporation Methods and apparatus for selectively modifying RF current paths in a plasma processing system
US9881772B2 (en) 2012-03-28 2018-01-30 Lam Research Corporation Multi-radiofrequency impedance control for plasma uniformity tuning
US9412579B2 (en) * 2012-04-26 2016-08-09 Applied Materials, Inc. Methods and apparatus for controlling substrate uniformity
US9449795B2 (en) * 2013-02-28 2016-09-20 Novellus Systems, Inc. Ceramic showerhead with embedded RF electrode for capacitively coupled plasma reactor
US9245761B2 (en) 2013-04-05 2016-01-26 Lam Research Corporation Internal plasma grid for semiconductor fabrication
US9147581B2 (en) 2013-07-11 2015-09-29 Lam Research Corporation Dual chamber plasma etcher with ion accelerator
JP6170378B2 (ja) * 2013-08-29 2017-07-26 東京エレクトロン株式会社 エッチング方法
WO2016171670A1 (en) * 2015-04-21 2016-10-27 Halliburton Energy Services, Inc. Partially reflective materials and coatings for optical communication in a wellbore
TWI651753B (zh) * 2016-01-20 2019-02-21 Tokyo Electron Limited 用以蝕刻高深寬比特徵部之功率調變的方法
KR102476353B1 (ko) 2016-07-26 2022-12-09 삼성전자주식회사 반도체 설비의 설정 파형 발생기, 플라즈마 처리 장치, 플라즈마 처리 장치의 제어 방법 및 반도체 장치의 제조 방법
US20180248400A1 (en) * 2017-02-24 2018-08-30 Greg Emmorey Solar-powered system for a traffic signal
US10395896B2 (en) 2017-03-03 2019-08-27 Applied Materials, Inc. Method and apparatus for ion energy distribution manipulation for plasma processing chambers that allows ion energy boosting through amplitude modulation
WO2018187679A1 (en) 2017-04-07 2018-10-11 Applied Materials, Inc. Plasma density control on substrate edge
US10002746B1 (en) * 2017-09-13 2018-06-19 Lam Research Corporation Multi regime plasma wafer processing to increase directionality of ions
US10504744B1 (en) * 2018-07-19 2019-12-10 Lam Research Corporation Three or more states for achieving high aspect ratio dielectric etch
US10714329B2 (en) * 2018-09-28 2020-07-14 Taiwan Semiconductor Manufacturing Co., Ltd. Pre-clean for contacts
CN111524780B (zh) * 2019-02-02 2024-07-05 中微半导体设备(上海)股份有限公司 一种用于超深宽比刻蚀的等离子反应器及其刻蚀方法
CN110379701A (zh) * 2019-07-24 2019-10-25 沈阳拓荆科技有限公司 具有可调射频组件的晶圆支撑座
JP7443516B2 (ja) * 2020-06-01 2024-03-05 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
KR102788383B1 (ko) 2020-07-16 2025-04-01 삼성전자주식회사 플라즈마 식각 장치, 플라즈마 식각 방법 및 그를 포함하는 반도체 소자의 제조 방법
US12646684B2 (en) * 2020-09-01 2026-06-02 Tokyo Electron Limited Etching method and etching apparatus
US12293897B2 (en) * 2023-02-28 2025-05-06 Applied Materials, Inc. Radio frequency diverter assembly enabling on-demand different spatial
KR102662977B1 (ko) 2023-11-06 2024-05-03 브이엠 주식회사 상부 전극의 경사 및 위치 조절 시스템

Family Cites Families (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4464223A (en) * 1983-10-03 1984-08-07 Tegal Corp. Plasma reactor apparatus and method
US5716485A (en) * 1995-06-07 1998-02-10 Varian Associates, Inc. Electrode designs for controlling uniformity profiles in plasma processing reactors
US5656123A (en) * 1995-06-07 1997-08-12 Varian Associates, Inc. Dual-frequency capacitively-coupled plasma reactor for materials processing
KR100226366B1 (ko) * 1995-08-23 1999-10-15 아끼구사 나오유끼 플라즈마장치 및 플라즈마 처리방법
US5626716A (en) * 1995-09-29 1997-05-06 Lam Research Corporation Plasma etching of semiconductors
JP3499104B2 (ja) * 1996-03-01 2004-02-23 株式会社日立製作所 プラズマ処理装置及びプラズマ処理方法
JPH1012597A (ja) * 1996-06-20 1998-01-16 Hitachi Ltd プラズマエッチング装置及びプラズマエッチング方法
US6127278A (en) * 1997-06-02 2000-10-03 Applied Materials, Inc. Etch process for forming high aspect ratio trenched in silicon
US6541164B1 (en) * 1997-10-22 2003-04-01 Applied Materials, Inc. Method for etching an anti-reflective coating
JP3726477B2 (ja) * 1998-03-16 2005-12-14 株式会社日立製作所 プラズマ処理装置及びプラズマ処理方法
US6387287B1 (en) * 1998-03-27 2002-05-14 Applied Materials, Inc. Process for etching oxide using a hexafluorobutadiene and manifesting a wide process window
US5998932A (en) * 1998-06-26 1999-12-07 Lam Research Corporation Focus ring arrangement for substantially eliminating unconfined plasma in a plasma processing chamber
US6849154B2 (en) * 1998-11-27 2005-02-01 Tokyo Electron Limited Plasma etching apparatus
US6178919B1 (en) * 1998-12-28 2001-01-30 Lam Research Corporation Perforated plasma confinement ring in plasma reactors
JP2000269196A (ja) * 1999-03-19 2000-09-29 Toshiba Corp プラズマ処理方法及びプラズマ処理装置
US6849193B2 (en) * 1999-03-25 2005-02-01 Hoiman Hung Highly selective process for etching oxide over nitride using hexafluorobutadiene
JP3704023B2 (ja) * 1999-04-28 2005-10-05 株式会社日立製作所 プラズマ処理装置及びプラズマ処理方法
US6303510B1 (en) * 1999-06-21 2001-10-16 Taiwan Semiconductor Manufacturing Company Plasma etch method with attenuated patterned layer charging
JP2001110784A (ja) * 1999-10-12 2001-04-20 Hitachi Ltd プラズマ処理装置および処理方法
US6362110B1 (en) * 2000-03-30 2002-03-26 Lam Research Corporation Enhanced resist strip in a dielectric etcher using downstream plasma
JP2002110647A (ja) * 2000-09-29 2002-04-12 Hitachi Ltd 半導体集積回路装置の製造方法
US6562190B1 (en) * 2000-10-06 2003-05-13 Lam Research Corporation System, apparatus, and method for processing wafer using single frequency RF power in plasma processing chamber
US6589854B2 (en) * 2001-06-26 2003-07-08 Macronix International Co., Ltd. Method of forming shallow trench isolation
US6770166B1 (en) * 2001-06-29 2004-08-03 Lam Research Corp. Apparatus and method for radio frequency de-coupling and bias voltage control in a plasma reactor
JP3814176B2 (ja) * 2001-10-02 2006-08-23 キヤノンアネルバ株式会社 プラズマ処理装置
US6737358B2 (en) * 2002-02-13 2004-05-18 Intel Corporation Plasma etching uniformity control
US6744212B2 (en) * 2002-02-14 2004-06-01 Lam Research Corporation Plasma processing apparatus and method for confining an RF plasma under very high gas flow and RF power density conditions
US7976673B2 (en) * 2003-05-06 2011-07-12 Lam Research Corporation RF pulsing of a narrow gap capacitively coupled reactor
US7625460B2 (en) * 2003-08-01 2009-12-01 Micron Technology, Inc. Multifrequency plasma reactor

Also Published As

Publication number Publication date
EP1656694A1 (de) 2006-05-17
US7144521B2 (en) 2006-12-05
JP5444277B2 (ja) 2014-03-19
JP2007503709A (ja) 2007-02-22
WO2005022623B1 (en) 2005-05-26
US20060118518A1 (en) 2006-06-08
KR20060123065A (ko) 2006-12-01
EP1656694B1 (de) 2012-01-25
KR101116586B1 (ko) 2012-03-15
EP1656694A4 (de) 2009-11-11
WO2005022623A1 (en) 2005-03-10
JP2011139094A (ja) 2011-07-14
US20070012659A1 (en) 2007-01-18
SG130195A1 (en) 2007-03-20
IL173861A (en) 2010-11-30
US7749353B2 (en) 2010-07-06
TWI346358B (en) 2011-08-01
TW200509252A (en) 2005-03-01
IL205779A (en) 2011-08-31
IL173861A0 (en) 2006-07-05

Similar Documents

Publication Publication Date Title
TWI346358B (en) High aspect ratio etch using modulation of rf powers of various frequencies
TW200520089A (en) Etch with ramping
ATE418157T1 (de) Kerbenfreies ätzen von soi-strukturen mit hohem seitenverhältnis durch verwendung eines zeitlich gemultiplexten prozesses und hf-vormodulation
DE602004027620D1 (de) Hf-pulsen eines kapazitiv gekoppelten narrow-gap-reaktors
KR20140122157A (ko) 플라즈마 처리 방법 및 플라즈마 처리 장치
SG144148A1 (en) Stabilized photoresist structure for etching process
JP2012054534A (ja) プラズマエッチング方法及びその装置
US9059116B2 (en) Etch with pulsed bias
WO2013151811A1 (en) Method and apparatus for forming features with plasma pre-etch treatment on photoresist
KR101919641B1 (ko) 높은 에칭 레이트를 제공하기 위한 방법
CN103650119A (zh) 在蚀刻期间利用光谱使rf切换与气体切换同步
WO2006026422A3 (en) Method and apparatus for etching material layers with high uniformity of a lateral etch rate across a substrate
TW200943410A (en) Plasma control using dual cathode frequency mixing
JP2013214583A (ja) プラズマ処理装置およびプラズマ処理方法
US8691698B2 (en) Controlled gas mixing for smooth sidewall rapid alternating etch process
TW200705127A (en) Method for resist strip in presence of regular low k and/or porous low k dielectric materials
WO2003088313A3 (en) Improved method for etching vias
US20140038419A1 (en) Method for providing vias
US20170047224A1 (en) Shadow trim line edge roughness reduction
TW201830522A (zh) 有機層蝕刻中垂直輪廓之產生方法
US20130029491A1 (en) Method of hard mask cd control by ar sputtering
JP2006302924A5 (de)
JP2001085395A (ja) 表面処理装置
US9257296B2 (en) Etch process with pre-etch transient conditioning
JPH02156529A (ja) 半導体ウェーハの酸化物層傾斜エッチング方法