ATE544176T1 - Selektives basisätzen - Google Patents
Selektives basisätzenInfo
- Publication number
- ATE544176T1 ATE544176T1 AT02746284T AT02746284T ATE544176T1 AT E544176 T1 ATE544176 T1 AT E544176T1 AT 02746284 T AT02746284 T AT 02746284T AT 02746284 T AT02746284 T AT 02746284T AT E544176 T1 ATE544176 T1 AT E544176T1
- Authority
- AT
- Austria
- Prior art keywords
- layer
- silicon
- amorphous
- germanium
- etching
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D10/00—Bipolar junction transistors [BJT]
- H10D10/01—Manufacture or treatment
- H10D10/021—Manufacture or treatment of heterojunction BJTs [HBT]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
- H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
- H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
- H10P50/266—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only
- H10P50/267—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas
- H10P50/268—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas of silicon-containing layers
Landscapes
- Bipolar Transistors (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| SE0102560A SE0102560L (sv) | 2001-07-18 | 2001-07-18 | Selektiv basetsning |
| SE0103980 | 2001-11-28 | ||
| PCT/SE2002/001361 WO2003009353A1 (en) | 2001-07-18 | 2002-07-09 | Selective base etching |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ATE544176T1 true ATE544176T1 (de) | 2012-02-15 |
Family
ID=26655521
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AT02746284T ATE544176T1 (de) | 2001-07-18 | 2002-07-09 | Selektives basisätzen |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US6852638B2 (de) |
| EP (1) | EP1415330B1 (de) |
| AT (1) | ATE544176T1 (de) |
| WO (1) | WO2003009353A1 (de) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111685237A (zh) * | 2019-03-13 | 2020-09-22 | 沈阳博阳饲料股份有限公司 | 貂、狐、貉复合预混合颗粒饲料的制备方法 |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1294016A1 (de) * | 2001-09-18 | 2003-03-19 | Paul Scherrer Institut | Herstellung von selbstorganisierten gestapelten Inseln für selbstjustierte Kontakte von Strukturen mit kleinen Abmessungen |
| EP1650796A3 (de) * | 2004-10-20 | 2010-12-08 | STMicroelectronics (Crolles 2) SAS | Verfahren für einen Kontaktanschluss auf einer Region einer integrierten Schaltung, insbesondere auf Transistorelektroden |
| GB2425400A (en) | 2005-04-18 | 2006-10-25 | X Fab Semiconductor Foundries | Improvements in transistor manufacture |
| KR100625124B1 (ko) * | 2005-08-30 | 2006-09-15 | 삼성전자주식회사 | 스택형 반도체 장치의 제조 방법 |
| US7902074B2 (en) | 2006-04-07 | 2011-03-08 | Micron Technology, Inc. | Simplified pitch doubling process flow |
| US20150371889A1 (en) * | 2014-06-20 | 2015-12-24 | Applied Materials, Inc. | Methods for shallow trench isolation formation in a silicon germanium layer |
| US9991129B1 (en) * | 2017-05-23 | 2018-06-05 | Applied Materials, Inc. | Selective etching of amorphous silicon over epitaxial silicon |
| CN111509079A (zh) * | 2020-01-20 | 2020-08-07 | 中国科学院微电子研究所 | 一种锗探测器及其制作方法 |
Family Cites Families (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5217564A (en) * | 1980-04-10 | 1993-06-08 | Massachusetts Institute Of Technology | Method of producing sheets of crystalline material and devices made therefrom |
| US4988632A (en) | 1990-01-02 | 1991-01-29 | Motorola, Inc. | Bipolar process using selective silicon deposition |
| US5266504A (en) | 1992-03-26 | 1993-11-30 | International Business Machines Corporation | Low temperature emitter process for high performance bipolar devices |
| US5213989A (en) | 1992-06-24 | 1993-05-25 | Motorola, Inc. | Method for forming a grown bipolar electrode contact using a sidewall seed |
| US5431777A (en) * | 1992-09-17 | 1995-07-11 | International Business Machines Corporation | Methods and compositions for the selective etching of silicon |
| US5484740A (en) * | 1994-06-06 | 1996-01-16 | Motorola, Inc. | Method of manufacturing a III-V semiconductor gate structure |
| US5600174A (en) * | 1994-10-11 | 1997-02-04 | The Board Of Trustees Of The Leeland Stanford Junior University | Suspended single crystal silicon structures and method of making same |
| US5616508A (en) | 1995-01-09 | 1997-04-01 | Texas Instruments Incorporated | High speed bipolar transistor using a patterned etch stop and diffusion source |
| US5593905A (en) | 1995-02-23 | 1997-01-14 | Texas Instruments Incorporated | Method of forming stacked barrier-diffusion source and etch stop for double polysilicon BJT with patterned base link |
| US5592017A (en) | 1995-03-23 | 1997-01-07 | Texas Instruments Incorporated | Self-aligned double poly BJT using sige spacers as extrinsic base contacts |
| SE508635C2 (sv) * | 1995-11-20 | 1998-10-26 | Ericsson Telefon Ab L M | Förfarande för selektiv etsning vid tillverkning av en bipolär transistor med självregistrerande bas-emitterstruktur |
| US6077752A (en) | 1995-11-20 | 2000-06-20 | Telefonaktiebolaget Lm Ericsson | Method in the manufacturing of a semiconductor device |
| US5817580A (en) * | 1996-02-08 | 1998-10-06 | Micron Technology, Inc. | Method of etching silicon dioxide |
| US6309975B1 (en) * | 1997-03-14 | 2001-10-30 | Micron Technology, Inc. | Methods of making implanted structures |
| US6255183B1 (en) * | 1997-05-23 | 2001-07-03 | U.S. Phillips Corporation | Manufacture of a semiconductor device with a MOS transistor having an LDD structure using SiGe spacers |
-
2002
- 2002-07-09 AT AT02746284T patent/ATE544176T1/de active
- 2002-07-09 EP EP02746284A patent/EP1415330B1/de not_active Expired - Lifetime
- 2002-07-09 WO PCT/SE2002/001361 patent/WO2003009353A1/en not_active Ceased
-
2004
- 2004-01-14 US US10/757,092 patent/US6852638B2/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111685237A (zh) * | 2019-03-13 | 2020-09-22 | 沈阳博阳饲料股份有限公司 | 貂、狐、貉复合预混合颗粒饲料的制备方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| US20040157455A1 (en) | 2004-08-12 |
| US6852638B2 (en) | 2005-02-08 |
| EP1415330B1 (de) | 2012-02-01 |
| WO2003009353A1 (en) | 2003-01-30 |
| EP1415330A1 (de) | 2004-05-06 |
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