ATE544883T1 - Vorrichtung zur herstellung eines blocks aus kristallinem material mit modulation der wärmeleitfähigkeit - Google Patents

Vorrichtung zur herstellung eines blocks aus kristallinem material mit modulation der wärmeleitfähigkeit

Info

Publication number
ATE544883T1
ATE544883T1 AT08354045T AT08354045T ATE544883T1 AT E544883 T1 ATE544883 T1 AT E544883T1 AT 08354045 T AT08354045 T AT 08354045T AT 08354045 T AT08354045 T AT 08354045T AT E544883 T1 ATE544883 T1 AT E544883T1
Authority
AT
Austria
Prior art keywords
crucible
unit
thermal conductivity
plates
producing
Prior art date
Application number
AT08354045T
Other languages
English (en)
Inventor
Florence Servant
Denis Camel
Benoit Marie
Damien Ponthenier
Original Assignee
Commissariat Energie Atomique
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat Energie Atomique filed Critical Commissariat Energie Atomique
Application granted granted Critical
Publication of ATE544883T1 publication Critical patent/ATE544883T1/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/003—Heating or cooling of the melt or the crystallised material
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1092—Shape defined by a solid member other than seed or product [e.g., Bridgman-Stockbarger]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Laminated Bodies (AREA)
AT08354045T 2007-07-10 2008-06-26 Vorrichtung zur herstellung eines blocks aus kristallinem material mit modulation der wärmeleitfähigkeit ATE544883T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0704979A FR2918675B1 (fr) 2007-07-10 2007-07-10 Dispositif de fabrication d'un bloc de materiau cristallin avec modulation de la conductivite thermique.

Publications (1)

Publication Number Publication Date
ATE544883T1 true ATE544883T1 (de) 2012-02-15

Family

ID=38786968

Family Applications (1)

Application Number Title Priority Date Filing Date
AT08354045T ATE544883T1 (de) 2007-07-10 2008-06-26 Vorrichtung zur herstellung eines blocks aus kristallinem material mit modulation der wärmeleitfähigkeit

Country Status (6)

Country Link
US (1) US8172944B2 (de)
EP (1) EP2014803B1 (de)
JP (1) JP5405063B2 (de)
AT (1) ATE544883T1 (de)
ES (1) ES2382493T3 (de)
FR (1) FR2918675B1 (de)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2940806B1 (fr) * 2009-01-05 2011-04-08 Commissariat Energie Atomique Procede de solidification de semi-conducteur avec ajout de charges de semi-conducteur dope au cours de la cristallisation
FR2968127B1 (fr) 2010-11-29 2013-11-22 Commissariat Energie Atomique Échangeur thermique d'un système de solidification et/ou de cristallisation d'un matériau semi-conducteur
US9982361B2 (en) 2011-08-01 2018-05-29 Gtat Corporation Liquid-cooled heat exchanger
FR2979638A1 (fr) * 2011-09-05 2013-03-08 Commissariat Energie Atomique Dispositif de fabrication de materiau cristallin a partir d'un creuset a resistance thermique non uniforme
KR20140059803A (ko) * 2011-09-14 2014-05-16 엠이엠씨 싱가포르 피티이. 엘티디. 이동식 열교환기를 구비한 방향성 응고로
KR101362362B1 (ko) * 2012-01-02 2014-02-13 비아이신소재 주식회사 사파이어 잉곳 제조용 성장로의 하부 실드
TWM448496U (zh) * 2012-09-04 2013-03-11 C Sun Mfg Ltd 晶體生長裝置
US20150090181A1 (en) * 2013-09-30 2015-04-02 Gt Crystal Systems, Llc Automated heat exchanger alignment
GB201319671D0 (en) * 2013-11-07 2013-12-25 Ebner Ind Ofenbau Controlling a temperature of a crucible inside an oven
DE102014102980B4 (de) * 2014-03-06 2017-12-21 Ald Vacuum Technologies Gmbh Hybridtiegel zur Kristallisation von Materialien, Verwendung des Hybridtiegels, Verfahren zur Herstellung von kristallinem Material sowie kristallines Produkt
JP6641317B2 (ja) * 2017-03-02 2020-02-05 不二越機械工業株式会社 単結晶製造装置
JP6989855B2 (ja) * 2019-10-24 2022-01-12 不二越機械工業株式会社 β－Ｇａ２Ｏ３単結晶製造装置およびこれに用いる発熱体
JP7786712B2 (ja) * 2021-10-26 2025-12-16 株式会社ノベルクリスタルテクノロジー 単結晶育成装置
CN118293696B (zh) * 2024-06-05 2024-08-23 杭州嘉悦智能设备有限公司 石墨坩埚及卧式石墨反应炉

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3898051A (en) * 1973-12-28 1975-08-05 Crystal Syst Crystal growing
US4015657A (en) * 1975-09-03 1977-04-05 Dmitry Andreevich Petrov Device for making single-crystal products
GB2041236A (en) * 1979-01-18 1980-09-10 Crystal Syst Method and apparatus for growing crystals
DE3323896A1 (de) * 1983-07-02 1985-01-17 Leybold-Heraeus GmbH, 5000 Köln Verfahren und vorrichtung zum gerichteten erstarren von schmelzen
FR2553232B1 (fr) * 1983-10-05 1985-12-27 Comp Generale Electricite Procede et dispositif pour elaborer un lingot d'un materiau semi-conducteur polycristallin
JP3523986B2 (ja) * 1997-07-02 2004-04-26 シャープ株式会社 多結晶半導体の製造方法および製造装置
US6572700B2 (en) * 1997-12-26 2003-06-03 Sumitomo Electric Industries, Ltd. Semiconductor crystal, and method and apparatus of production thereof
JP2001048696A (ja) * 1999-08-06 2001-02-20 Mitsubishi Materials Corp 結晶シリコン製造装置
FR2853913B1 (fr) * 2003-04-17 2006-09-29 Apollon Solar Creuset pour un dispositif de fabrication d'un bloc de materiau cristallin et procede de fabrication
US7293994B2 (en) * 2005-12-08 2007-11-13 International Business Machines Corporation Method and apparatus for electrically connecting two substrates using a resilient wire bundle captured in an aperture of an interposer by a retention member
JP2007332022A (ja) * 2006-06-13 2007-12-27 Young Sang Cho 多結晶シリコンインゴット製造装置

Also Published As

Publication number Publication date
FR2918675A1 (fr) 2009-01-16
EP2014803B1 (de) 2012-02-08
FR2918675B1 (fr) 2009-08-28
US20090013925A1 (en) 2009-01-15
JP5405063B2 (ja) 2014-02-05
EP2014803A1 (de) 2009-01-14
ES2382493T3 (es) 2012-06-08
US8172944B2 (en) 2012-05-08
JP2009018987A (ja) 2009-01-29

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