ATE545152T1 - Durchkontaktierung durch einen wafer mit niedrigem widerstand - Google Patents
Durchkontaktierung durch einen wafer mit niedrigem widerstandInfo
- Publication number
- ATE545152T1 ATE545152T1 AT08767260T AT08767260T ATE545152T1 AT E545152 T1 ATE545152 T1 AT E545152T1 AT 08767260 T AT08767260 T AT 08767260T AT 08767260 T AT08767260 T AT 08767260T AT E545152 T1 ATE545152 T1 AT E545152T1
- Authority
- AT
- Austria
- Prior art keywords
- wafer
- contact
- low resistance
- resistance wafer
- provides
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/40—Forming printed elements for providing electric connections to or between printed circuits
- H05K3/4038—Through-connections; Vertical interconnect access [VIA] connections
- H05K3/4076—Through-connections; Vertical interconnect access [VIA] connections by thin-film techniques
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00023—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems without movable or flexible elements
- B81C1/00095—Interconnects
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W20/00—Interconnections in chips, wafers or substrates
- H10W20/01—Manufacture or treatment
- H10W20/021—Manufacture or treatment of interconnections within wafers or substrates
- H10W20/023—Manufacture or treatment of interconnections within wafers or substrates the interconnections being through-semiconductor vias
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W20/00—Interconnections in chips, wafers or substrates
- H10W20/01—Manufacture or treatment
- H10W20/021—Manufacture or treatment of interconnections within wafers or substrates
- H10W20/023—Manufacture or treatment of interconnections within wafers or substrates the interconnections being through-semiconductor vias
- H10W20/0242—Manufacture or treatment of interconnections within wafers or substrates the interconnections being through-semiconductor vias comprising etching via holes from the back sides of the chips, wafers or substrates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W20/00—Interconnections in chips, wafers or substrates
- H10W20/20—Interconnections within wafers or substrates, e.g. through-silicon vias [TSV]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W20/00—Interconnections in chips, wafers or substrates
- H10W20/20—Interconnections within wafers or substrates, e.g. through-silicon vias [TSV]
- H10W20/211—Through-semiconductor vias, e.g. TSVs
- H10W20/212—Top-view shapes or dispositions, e.g. top-view layouts of the vias
- H10W20/2125—Top-view shapes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
- H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
- H10W70/62—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their interconnections
- H10W70/63—Vias, e.g. via plugs
- H10W70/635—Through-vias
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2207/00—Microstructural systems or auxiliary parts thereof
- B81B2207/07—Interconnects
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/03—Use of materials for the substrate
- H05K1/0306—Inorganic insulating substrates, e.g. ceramic, glass
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/09—Shape and layout
- H05K2201/09818—Shape or layout details not covered by a single group of H05K2201/09009 - H05K2201/09809
- H05K2201/09827—Tapered, e.g. tapered hole, via or groove
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/09—Shape and layout
- H05K2201/09818—Shape or layout details not covered by a single group of H05K2201/09009 - H05K2201/09809
- H05K2201/09854—Hole or via having special cross-section, e.g. elliptical
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/0011—Working of insulating substrates or insulating layers
- H05K3/0017—Etching of the substrate by chemical or physical means
- H05K3/002—Etching of the substrate by chemical or physical means by liquid chemical etching
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/0011—Working of insulating substrates or insulating layers
- H05K3/0017—Etching of the substrate by chemical or physical means
- H05K3/0041—Etching of the substrate by chemical or physical means by plasma etching
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/40—Forming printed elements for providing electric connections to or between printed circuits
- H05K3/42—Plated through-holes or plated via connections
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
- H10W90/20—Configurations of stacked chips
- H10W90/297—Configurations of stacked chips characterised by the through-semiconductor vias [TSVs] in the stacked chips
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
- H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
- H10W90/721—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors
- H10W90/722—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors between stacked chips
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Semiconductor Integrated Circuits (AREA)
- Printing Elements For Providing Electric Connections Between Printed Circuits (AREA)
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| SE0701657 | 2007-07-05 | ||
| SE0702047 | 2007-09-12 | ||
| SE0702403 | 2007-10-26 | ||
| PCT/SE2008/050794 WO2009005462A1 (en) | 2007-07-05 | 2008-06-27 | Low resistance through-wafer via |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ATE545152T1 true ATE545152T1 (de) | 2012-02-15 |
Family
ID=40226335
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AT08767260T ATE545152T1 (de) | 2007-07-05 | 2008-06-27 | Durchkontaktierung durch einen wafer mit niedrigem widerstand |
Country Status (11)
| Country | Link |
|---|---|
| US (2) | US8338957B2 (de) |
| EP (1) | EP2165362B1 (de) |
| JP (1) | JP5550076B2 (de) |
| KR (1) | KR101465709B1 (de) |
| CN (1) | CN101785103B (de) |
| AT (1) | ATE545152T1 (de) |
| CA (1) | CA2692595A1 (de) |
| DK (1) | DK2165362T3 (de) |
| ES (1) | ES2386008T3 (de) |
| TW (1) | TWI463629B (de) |
| WO (1) | WO2009005462A1 (de) |
Families Citing this family (76)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5654471B2 (ja) | 2008-10-15 | 2015-01-14 | オー・アー・セー・マイクロテック・アクチボラゲット | ビア配線を作るための方法 |
| SE534510C2 (sv) | 2008-11-19 | 2011-09-13 | Silex Microsystems Ab | Funktionell inkapsling |
| US7816945B2 (en) * | 2009-01-22 | 2010-10-19 | International Business Machines Corporation | 3D chip-stack with fuse-type through silicon via |
| EP2278614B1 (de) * | 2009-07-21 | 2013-04-03 | STMicroelectronics (Crolles 2) SAS | Durchkontaktierung mit seitlichen Erweiterungen |
| DE102010029760B4 (de) * | 2010-06-07 | 2019-02-21 | Robert Bosch Gmbh | Bauelement mit einer Durchkontaktierung und Verfahren zu seiner Herstellung |
| TWI420641B (zh) * | 2010-06-30 | 2013-12-21 | 香港應用科技研究院有限公司 | 導通體及導通體形成方法及導通體填充方法 |
| US8421193B2 (en) * | 2010-11-18 | 2013-04-16 | Nanya Technology Corporation | Integrated circuit device having through via and method for preparing the same |
| US20120168935A1 (en) * | 2011-01-03 | 2012-07-05 | Nanya Technology Corp. | Integrated circuit device and method for preparing the same |
| US20120193809A1 (en) * | 2011-02-01 | 2012-08-02 | Nanya Technology Corp. | Integrated circuit device and method for preparing the same |
| US20120235969A1 (en) * | 2011-03-15 | 2012-09-20 | Qualcomm Mems Technologies, Inc. | Thin film through-glass via and methods for forming same |
| US8487410B2 (en) | 2011-04-13 | 2013-07-16 | Taiwan Semiconductor Manufacturing Company, Ltd. | Through-silicon vias for semicondcutor substrate and method of manufacture |
| JP5763962B2 (ja) | 2011-04-19 | 2015-08-12 | 日本特殊陶業株式会社 | セラミック配線基板、多数個取りセラミック配線基板、およびその製造方法 |
| EP2632237B1 (de) | 2011-07-25 | 2019-07-10 | NGK Sparkplug Co., Ltd. | Verdrahtungssubstrat |
| US20130050226A1 (en) * | 2011-08-30 | 2013-02-28 | Qualcomm Mems Technologies, Inc. | Die-cut through-glass via and methods for forming same |
| SE537874C2 (sv) | 2012-04-13 | 2015-11-03 | Silex Microsystems Ab | CTE-anpassad interposer och metod att tillverka en sådan |
| JP5753628B2 (ja) * | 2012-04-24 | 2015-07-22 | 三共化成株式会社 | スルーホールのめっき構造 |
| US9214435B2 (en) * | 2012-05-21 | 2015-12-15 | Globalfoundries Inc. | Via structure for three-dimensional circuit integration |
| JP6114527B2 (ja) * | 2012-10-05 | 2017-04-12 | 新光電気工業株式会社 | 配線基板及びその製造方法 |
| US10727092B2 (en) * | 2012-10-17 | 2020-07-28 | Applied Materials, Inc. | Heated substrate support ring |
| JP6002008B2 (ja) * | 2012-11-19 | 2016-10-05 | 富士電機株式会社 | 半導体装置の製造方法 |
| DE102013208827A1 (de) * | 2013-05-14 | 2014-11-20 | Robert Bosch Gmbh | Wafer mit einer Durchkontaktierung |
| CN104340951B (zh) * | 2013-07-30 | 2016-12-28 | 中芯国际集成电路制造(上海)有限公司 | 一种运动传感器的制备方法 |
| KR101483875B1 (ko) * | 2013-07-31 | 2015-01-16 | 삼성전기주식회사 | 글라스 코어기판 및 그 제조방법 |
| CN104349575B (zh) | 2013-07-31 | 2017-12-26 | 鹏鼎控股(深圳)股份有限公司 | 柔性电路板及其制作方法 |
| CN104519658B (zh) * | 2013-09-30 | 2017-09-29 | 北大方正集团有限公司 | 一种电路板跳层盲孔的制作方法及电路板 |
| JP6213143B2 (ja) * | 2013-10-23 | 2017-10-18 | 富士電機株式会社 | 半導体基板、及び、半導体基板の製造方法 |
| US9607890B1 (en) * | 2013-11-18 | 2017-03-28 | Amkor Technology, Inc. | Stress relieving through-silicon vias |
| JP5846185B2 (ja) * | 2013-11-21 | 2016-01-20 | 大日本印刷株式会社 | 貫通電極基板及び貫通電極基板を用いた半導体装置 |
| JP6292868B2 (ja) * | 2013-12-26 | 2018-03-14 | 矢崎総業株式会社 | 一括成形モジュール |
| JP6273873B2 (ja) * | 2014-02-04 | 2018-02-07 | 大日本印刷株式会社 | ガラスインターポーザー基板の製造方法 |
| US9455214B2 (en) | 2014-05-19 | 2016-09-27 | Globalfoundries Inc. | Wafer frontside-backside through silicon via |
| JP2016072433A (ja) * | 2014-09-30 | 2016-05-09 | 大日本印刷株式会社 | 貫通電極基板及びその製造方法 |
| US20160219704A1 (en) * | 2015-01-28 | 2016-07-28 | Rf Micro Devices, Inc. | Hermetically sealed through vias (tvs) |
| US10593562B2 (en) | 2015-04-02 | 2020-03-17 | Samtec, Inc. | Method for creating through-connected vias and conductors on a substrate |
| US9691634B2 (en) | 2015-04-02 | 2017-06-27 | Abexl Inc. | Method for creating through-connected vias and conductors on a substrate |
| JP6596906B2 (ja) * | 2015-04-30 | 2019-10-30 | 大日本印刷株式会社 | 貫通電極基板並びに貫通電極基板を用いたインターポーザ及び半導体装置 |
| JP6044697B2 (ja) * | 2015-11-20 | 2016-12-14 | 大日本印刷株式会社 | 貫通電極基板及び貫通電極基板を用いた半導体装置 |
| JP6645173B2 (ja) * | 2015-12-22 | 2020-02-14 | セイコーエプソン株式会社 | 貫通配線、液体噴射ヘッド、貫通配線の製造方法、memsデバイスの製造方法及び液体噴射ヘッドの製造方法 |
| US10410883B2 (en) | 2016-06-01 | 2019-09-10 | Corning Incorporated | Articles and methods of forming vias in substrates |
| US10794679B2 (en) | 2016-06-29 | 2020-10-06 | Corning Incorporated | Method and system for measuring geometric parameters of through holes |
| US10134657B2 (en) | 2016-06-29 | 2018-11-20 | Corning Incorporated | Inorganic wafer having through-holes attached to semiconductor wafer |
| JP6372546B2 (ja) * | 2016-11-15 | 2018-08-15 | 大日本印刷株式会社 | 貫通電極基板及び貫通電極基板を用いた半導体装置 |
| US10359565B2 (en) | 2017-02-07 | 2019-07-23 | Nokia Of America Corporation | Optoelectronic circuit having one or more double-sided substrates |
| JP7307898B2 (ja) * | 2017-03-24 | 2023-07-13 | 大日本印刷株式会社 | 貫通電極基板及びその製造方法 |
| US10580725B2 (en) | 2017-05-25 | 2020-03-03 | Corning Incorporated | Articles having vias with geometry attributes and methods for fabricating the same |
| US11078112B2 (en) | 2017-05-25 | 2021-08-03 | Corning Incorporated | Silica-containing substrates with vias having an axially variable sidewall taper and methods for forming the same |
| DE102017213631A1 (de) * | 2017-08-07 | 2019-02-07 | Robert Bosch Gmbh | Mikromechanische Vorrichtung und entsprechendes Herstellungsverfahren |
| US12180108B2 (en) | 2017-12-19 | 2024-12-31 | Corning Incorporated | Methods for etching vias in glass-based articles employing positive charge organic molecules |
| JP7032148B2 (ja) * | 2018-01-17 | 2022-03-08 | 新光電気工業株式会社 | 配線基板及びその製造方法と電子部品装置 |
| US11554984B2 (en) | 2018-02-22 | 2023-01-17 | Corning Incorporated | Alkali-free borosilicate glasses with low post-HF etch roughness |
| CN112154538A (zh) | 2018-03-30 | 2020-12-29 | 申泰公司 | 导电过孔及其制造方法 |
| US11152294B2 (en) | 2018-04-09 | 2021-10-19 | Corning Incorporated | Hermetic metallized via with improved reliability |
| JP6642642B2 (ja) * | 2018-07-12 | 2020-02-05 | 大日本印刷株式会社 | 貫通電極基板 |
| US12089374B2 (en) | 2018-08-10 | 2024-09-10 | Frore Systems Inc. | MEMS-based active cooling systems |
| US11464140B2 (en) | 2019-12-06 | 2022-10-04 | Frore Systems Inc. | Centrally anchored MEMS-based active cooling systems |
| US11710678B2 (en) | 2018-08-10 | 2023-07-25 | Frore Systems Inc. | Combined architecture for cooling devices |
| US12200875B2 (en) | 2018-09-20 | 2025-01-14 | Industrial Technology Research Institute | Copper metallization for through-glass vias on thin glass |
| KR20250083587A (ko) | 2019-02-21 | 2025-06-10 | 코닝 인코포레이티드 | 구리-금속화된 쓰루 홀을 갖는 유리 또는 유리 세라믹 물품 및 이를 제조하기 위한 공정 |
| US12198994B2 (en) * | 2019-03-12 | 2025-01-14 | Absolics Inc. | Packaging substrate and method for manufacturing same |
| WO2021067330A2 (en) | 2019-09-30 | 2021-04-08 | Samtec, Inc. | Electrically conductive vias and methods for producing same |
| WO2021086873A1 (en) | 2019-10-30 | 2021-05-06 | Frore System Inc. | Mems-based airflow system |
| US12193192B2 (en) | 2019-12-06 | 2025-01-07 | Frore Systems Inc. | Cavities for center-pinned actuator cooling systems |
| US11796262B2 (en) | 2019-12-06 | 2023-10-24 | Frore Systems Inc. | Top chamber cavities for center-pinned actuators |
| US11510341B2 (en) | 2019-12-06 | 2022-11-22 | Frore Systems Inc. | Engineered actuators usable in MEMs active cooling devices |
| US12033917B2 (en) | 2019-12-17 | 2024-07-09 | Frore Systems Inc. | Airflow control in active cooling systems |
| US12029005B2 (en) | 2019-12-17 | 2024-07-02 | Frore Systems Inc. | MEMS-based cooling systems for closed and open devices |
| JP6992797B2 (ja) * | 2019-12-26 | 2022-01-13 | 大日本印刷株式会社 | 貫通電極基板 |
| CN111960376B (zh) * | 2020-07-21 | 2024-08-23 | 上海集成电路研发中心有限公司 | 一种mems支撑和电连接孔结构及制备方法 |
| TWI756788B (zh) | 2020-08-21 | 2022-03-01 | 欣興電子股份有限公司 | 線路板及其孔洞形成方法 |
| CN114080100B (zh) * | 2020-08-21 | 2024-11-12 | 欣兴电子股份有限公司 | 线路板及其孔洞的形成方法 |
| TWI836267B (zh) * | 2020-09-16 | 2024-03-21 | 美商弗瑞歐系統有限公司 | 致動器、冷卻系統及冷卻發熱結構之方法 |
| KR102809879B1 (ko) | 2020-10-02 | 2025-05-22 | 프로리 시스템스 인코포레이티드 | 능동 방열판 |
| WO2023282350A1 (ja) * | 2021-07-09 | 2023-01-12 | 住友電気工業株式会社 | プリント配線板 |
| JP7719746B2 (ja) * | 2022-03-16 | 2025-08-06 | 浜松ホトニクス株式会社 | 半導体デバイス及び半導体デバイスの製造方法 |
| US12581979B2 (en) * | 2022-03-31 | 2026-03-17 | Beijing Boe Optoelectronics Technology Co., Ltd. | Substrate and preparation method thereof, integrated passive device, and electronic apparatus |
| US20250087560A1 (en) * | 2023-09-07 | 2025-03-13 | Avago Technologies International Sales Pte. Limited | Structures and methods to maximize contact density across cavities |
Family Cites Families (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5166097A (en) * | 1990-11-26 | 1992-11-24 | The Boeing Company | Silicon wafers containing conductive feedthroughs |
| JPH0567024U (ja) * | 1992-02-18 | 1993-09-03 | 株式会社三協精機製作所 | 磁電変換素子 |
| JP2756223B2 (ja) * | 1993-07-02 | 1998-05-25 | 株式会社三協精機製作所 | 基板の貫通電極 |
| JP3879816B2 (ja) * | 2000-06-02 | 2007-02-14 | セイコーエプソン株式会社 | 半導体装置及びその製造方法、積層型半導体装置、回路基板並びに電子機器 |
| JP4626919B2 (ja) * | 2001-03-27 | 2011-02-09 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
| JP4020367B2 (ja) * | 2001-04-17 | 2007-12-12 | 株式会社ルネサステクノロジ | 半導体装置の製造方法 |
| US20020190015A1 (en) * | 2001-06-13 | 2002-12-19 | Dietrich Craig J. | Tool organizer |
| JP3998984B2 (ja) * | 2002-01-18 | 2007-10-31 | 富士通株式会社 | 回路基板及びその製造方法 |
| CN1280881C (zh) * | 2002-03-25 | 2006-10-18 | 华邦电子股份有限公司 | 深亚微米mos装置及其制造方法 |
| JP2003318178A (ja) * | 2002-04-24 | 2003-11-07 | Seiko Epson Corp | 半導体装置及びその製造方法、回路基板並びに電子機器 |
| JP3580803B2 (ja) * | 2002-08-09 | 2004-10-27 | 沖電気工業株式会社 | 半導体装置 |
| JP2004289071A (ja) * | 2003-03-25 | 2004-10-14 | Seiko Epson Corp | 配線基板及びその製造方法、半導体装置、電子デバイス並びに電子機器 |
| KR101086520B1 (ko) * | 2003-06-20 | 2011-11-23 | 엔엑스피 비 브이 | 전자 장치, 조립체 및 전자 장치 제조 방법 |
| TWI237884B (en) * | 2004-01-09 | 2005-08-11 | Ind Tech Res Inst | Microelectronic thermoelectric device and method of manufacture |
| JP2006012889A (ja) * | 2004-06-22 | 2006-01-12 | Canon Inc | 半導体チップの製造方法および半導体装置の製造方法 |
| JP4353861B2 (ja) * | 2004-06-30 | 2009-10-28 | Necエレクトロニクス株式会社 | 半導体装置 |
| US20060278997A1 (en) * | 2004-12-01 | 2006-12-14 | Tessera, Inc. | Soldered assemblies and methods of making the same |
| TWI389205B (zh) * | 2005-03-04 | 2013-03-11 | Sanmina Sci Corp | 使用抗鍍層分隔介層結構 |
| JP2007067216A (ja) * | 2005-08-31 | 2007-03-15 | Sanyo Electric Co Ltd | 半導体装置およびその製造方法、回路基板およびその製造方法 |
| JP2008153352A (ja) * | 2006-12-15 | 2008-07-03 | Seiko Epson Corp | 半導体装置とその製造方法、および電子機器 |
-
2008
- 2008-06-27 CN CN2008801040193A patent/CN101785103B/zh active Active
- 2008-06-27 JP JP2010514698A patent/JP5550076B2/ja active Active
- 2008-06-27 CA CA 2692595 patent/CA2692595A1/en not_active Abandoned
- 2008-06-27 ES ES08767260T patent/ES2386008T3/es active Active
- 2008-06-27 AT AT08767260T patent/ATE545152T1/de active
- 2008-06-27 EP EP08767260A patent/EP2165362B1/de active Active
- 2008-06-27 US US12/452,468 patent/US8338957B2/en active Active
- 2008-06-27 WO PCT/SE2008/050794 patent/WO2009005462A1/en not_active Ceased
- 2008-06-27 KR KR1020107002564A patent/KR101465709B1/ko active Active
- 2008-06-27 DK DK08767260.6T patent/DK2165362T3/da active
- 2008-07-04 TW TW097125466A patent/TWI463629B/zh active
-
2012
- 2012-12-03 US US13/692,303 patent/US8871641B2/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| JP5550076B2 (ja) | 2014-07-16 |
| CA2692595A1 (en) | 2009-01-08 |
| CN101785103A (zh) | 2010-07-21 |
| US20130164935A1 (en) | 2013-06-27 |
| JP2010532562A (ja) | 2010-10-07 |
| US8338957B2 (en) | 2012-12-25 |
| US8871641B2 (en) | 2014-10-28 |
| EP2165362A1 (de) | 2010-03-24 |
| WO2009005462A1 (en) | 2009-01-08 |
| TWI463629B (zh) | 2014-12-01 |
| KR101465709B1 (ko) | 2014-11-27 |
| US20100133697A1 (en) | 2010-06-03 |
| TW200910569A (en) | 2009-03-01 |
| KR20100047251A (ko) | 2010-05-07 |
| DK2165362T3 (da) | 2012-05-29 |
| EP2165362B1 (de) | 2012-02-08 |
| ES2386008T3 (es) | 2012-08-07 |
| CN101785103B (zh) | 2011-12-28 |
| EP2165362A4 (de) | 2010-12-29 |
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