ATE545202T1 - Analogschalter - Google Patents

Analogschalter

Info

Publication number
ATE545202T1
ATE545202T1 AT09181029T AT09181029T ATE545202T1 AT E545202 T1 ATE545202 T1 AT E545202T1 AT 09181029 T AT09181029 T AT 09181029T AT 09181029 T AT09181029 T AT 09181029T AT E545202 T1 ATE545202 T1 AT E545202T1
Authority
AT
Austria
Prior art keywords
terminal
transistor
switch
analog
input
Prior art date
Application number
AT09181029T
Other languages
English (en)
Inventor
Serge Ramet
Original Assignee
St Microelectronics Grenoble
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by St Microelectronics Grenoble filed Critical St Microelectronics Grenoble
Application granted granted Critical
Publication of ATE545202T1 publication Critical patent/ATE545202T1/de

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/14Modifications for compensating variations of physical values, e.g. of temperature
    • H03K17/145Modifications for compensating variations of physical values, e.g. of temperature in field-effect transistor switches
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/06Modifications for ensuring a fully conducting state
    • H03K17/063Modifications for ensuring a fully conducting state in field-effect transistor switches
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K2217/00Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
    • H03K2217/0018Special modifications or use of the back gate voltage of a FET

Landscapes

  • Electronic Switches (AREA)
  • Analogue/Digital Conversion (AREA)
AT09181029T 2009-03-03 2009-12-30 Analogschalter ATE545202T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0951320 2009-03-03

Publications (1)

Publication Number Publication Date
ATE545202T1 true ATE545202T1 (de) 2012-02-15

Family

ID=41009808

Family Applications (1)

Application Number Title Priority Date Filing Date
AT09181029T ATE545202T1 (de) 2009-03-03 2009-12-30 Analogschalter

Country Status (3)

Country Link
US (1) US8283968B2 (de)
EP (1) EP2226937B1 (de)
AT (1) ATE545202T1 (de)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2293446B1 (de) * 2009-09-03 2011-11-09 Austriamicrosystems AG Koppelkreis, Treiberschaltung und Verfahren zur Steuerung eines Koppelkreises
US20120194153A1 (en) * 2011-02-01 2012-08-02 Carmine Cozzolino Constant vgs mos switch with charge pump
US8547159B2 (en) * 2011-05-13 2013-10-01 Fairchild Semiconductor Corporation Constant Vgs analog switch
US8779839B2 (en) 2011-12-20 2014-07-15 Fairchild Semiconductor Corporation Constant Vgs switch
KR101863973B1 (ko) * 2013-07-08 2018-06-04 매그나칩 반도체 유한회사 씨모스 아날로그 스위치 회로
US20150381160A1 (en) * 2014-06-26 2015-12-31 Infineon Technologies Ag Robust multiplexer, and method for operating a robust multiplexer
CN106027015B (zh) 2015-03-24 2020-02-28 快捷半导体(苏州)有限公司 增强型保护性多路复用器
US9641128B2 (en) 2015-07-29 2017-05-02 Qualcomm Incorporated High linearity structure for amplifier
US9979396B1 (en) 2017-02-23 2018-05-22 Stmicroelectronics (Grenoble 2) Sas Bidirectional analog multiplexer
CN111835298B (zh) * 2020-08-10 2024-02-06 中国电子科技集团公司第二十四研究所 一种差分跟随器控制电路
EP4380052A1 (de) 2022-12-01 2024-06-05 NXP USA, Inc. Bidirektionale leistungsschaltung
US12153457B2 (en) * 2023-04-20 2024-11-26 Xilinx, Inc. Cascaded reference based thin-oxide only N-well steering circuit for contention solution in multi-supply designs

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA1045217A (en) * 1976-02-10 1978-12-26 Glenn A. Pollitt Constant impedance mosfet switch
DE3226339C2 (de) 1981-07-17 1985-12-19 Tokyo Shibaura Denki K.K., Kawasaki, Kanagawa Analoge Schaltervorrichtung mit MOS-Transistoren
US5510747A (en) * 1993-11-30 1996-04-23 Siliconix Incorporated Gate drive technique for a bidirectional blocking lateral MOSFET
US5689209A (en) 1994-12-30 1997-11-18 Siliconix Incorporated Low-side bidirectional battery disconnect switch
FR2738424B1 (fr) 1995-09-05 1997-11-21 Sgs Thomson Microelectronics Interrupteur analogique basse tension
US5880620A (en) * 1997-04-22 1999-03-09 Xilinx, Inc. Pass gate circuit with body bias control
US6154085A (en) * 1998-09-08 2000-11-28 Maxim Integrated Products, Inc. Constant gate drive MOS analog switch
US20030016072A1 (en) 2001-07-18 2003-01-23 Shankar Ramakrishnan Mosfet-based analog switches
EP1320168A1 (de) * 2001-12-12 2003-06-18 Dialog Semiconductor GmbH Leistungsschalter für Batterieschutz
JP4150297B2 (ja) * 2003-06-30 2008-09-17 ソニー株式会社 電界効果トランジスタのドライブ回路
US7095266B2 (en) * 2004-08-18 2006-08-22 Fairchild Semiconductor Corporation Circuit and method for lowering insertion loss and increasing bandwidth in MOSFET switches
JP2006332416A (ja) * 2005-05-27 2006-12-07 Nec Electronics Corp 半導体装置
US20070097572A1 (en) 2005-10-28 2007-05-03 Caretta Integrated Circuits Protective circuit
JP5151145B2 (ja) * 2006-12-26 2013-02-27 ソニー株式会社 スイッチ回路、可変コンデンサ回路およびそのic
US7514983B2 (en) * 2007-03-23 2009-04-07 Fairchild Semiconductor Corporation Over-voltage tolerant pass-gate

Also Published As

Publication number Publication date
EP2226937A2 (de) 2010-09-08
EP2226937B1 (de) 2012-02-08
EP2226937A3 (de) 2010-12-22
US20100225379A1 (en) 2010-09-09
US8283968B2 (en) 2012-10-09

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