ATE545202T1 - Analogschalter - Google Patents
AnalogschalterInfo
- Publication number
- ATE545202T1 ATE545202T1 AT09181029T AT09181029T ATE545202T1 AT E545202 T1 ATE545202 T1 AT E545202T1 AT 09181029 T AT09181029 T AT 09181029T AT 09181029 T AT09181029 T AT 09181029T AT E545202 T1 ATE545202 T1 AT E545202T1
- Authority
- AT
- Austria
- Prior art keywords
- terminal
- transistor
- switch
- analog
- input
- Prior art date
Links
- 230000008878 coupling Effects 0.000 abstract 1
- 238000010168 coupling process Methods 0.000 abstract 1
- 238000005859 coupling reaction Methods 0.000 abstract 1
- 229910044991 metal oxide Inorganic materials 0.000 abstract 1
- 150000004706 metal oxides Chemical class 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/14—Modifications for compensating variations of physical values, e.g. of temperature
- H03K17/145—Modifications for compensating variations of physical values, e.g. of temperature in field-effect transistor switches
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/06—Modifications for ensuring a fully conducting state
- H03K17/063—Modifications for ensuring a fully conducting state in field-effect transistor switches
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
- H03K2217/0018—Special modifications or use of the back gate voltage of a FET
Landscapes
- Electronic Switches (AREA)
- Analogue/Digital Conversion (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR0951320 | 2009-03-03 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ATE545202T1 true ATE545202T1 (de) | 2012-02-15 |
Family
ID=41009808
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AT09181029T ATE545202T1 (de) | 2009-03-03 | 2009-12-30 | Analogschalter |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US8283968B2 (de) |
| EP (1) | EP2226937B1 (de) |
| AT (1) | ATE545202T1 (de) |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP2293446B1 (de) * | 2009-09-03 | 2011-11-09 | Austriamicrosystems AG | Koppelkreis, Treiberschaltung und Verfahren zur Steuerung eines Koppelkreises |
| US20120194153A1 (en) * | 2011-02-01 | 2012-08-02 | Carmine Cozzolino | Constant vgs mos switch with charge pump |
| US8547159B2 (en) * | 2011-05-13 | 2013-10-01 | Fairchild Semiconductor Corporation | Constant Vgs analog switch |
| US8779839B2 (en) | 2011-12-20 | 2014-07-15 | Fairchild Semiconductor Corporation | Constant Vgs switch |
| KR101863973B1 (ko) * | 2013-07-08 | 2018-06-04 | 매그나칩 반도체 유한회사 | 씨모스 아날로그 스위치 회로 |
| US20150381160A1 (en) * | 2014-06-26 | 2015-12-31 | Infineon Technologies Ag | Robust multiplexer, and method for operating a robust multiplexer |
| CN106027015B (zh) | 2015-03-24 | 2020-02-28 | 快捷半导体(苏州)有限公司 | 增强型保护性多路复用器 |
| US9641128B2 (en) | 2015-07-29 | 2017-05-02 | Qualcomm Incorporated | High linearity structure for amplifier |
| US9979396B1 (en) | 2017-02-23 | 2018-05-22 | Stmicroelectronics (Grenoble 2) Sas | Bidirectional analog multiplexer |
| CN111835298B (zh) * | 2020-08-10 | 2024-02-06 | 中国电子科技集团公司第二十四研究所 | 一种差分跟随器控制电路 |
| EP4380052A1 (de) | 2022-12-01 | 2024-06-05 | NXP USA, Inc. | Bidirektionale leistungsschaltung |
| US12153457B2 (en) * | 2023-04-20 | 2024-11-26 | Xilinx, Inc. | Cascaded reference based thin-oxide only N-well steering circuit for contention solution in multi-supply designs |
Family Cites Families (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CA1045217A (en) * | 1976-02-10 | 1978-12-26 | Glenn A. Pollitt | Constant impedance mosfet switch |
| DE3226339C2 (de) | 1981-07-17 | 1985-12-19 | Tokyo Shibaura Denki K.K., Kawasaki, Kanagawa | Analoge Schaltervorrichtung mit MOS-Transistoren |
| US5510747A (en) * | 1993-11-30 | 1996-04-23 | Siliconix Incorporated | Gate drive technique for a bidirectional blocking lateral MOSFET |
| US5689209A (en) | 1994-12-30 | 1997-11-18 | Siliconix Incorporated | Low-side bidirectional battery disconnect switch |
| FR2738424B1 (fr) | 1995-09-05 | 1997-11-21 | Sgs Thomson Microelectronics | Interrupteur analogique basse tension |
| US5880620A (en) * | 1997-04-22 | 1999-03-09 | Xilinx, Inc. | Pass gate circuit with body bias control |
| US6154085A (en) * | 1998-09-08 | 2000-11-28 | Maxim Integrated Products, Inc. | Constant gate drive MOS analog switch |
| US20030016072A1 (en) | 2001-07-18 | 2003-01-23 | Shankar Ramakrishnan | Mosfet-based analog switches |
| EP1320168A1 (de) * | 2001-12-12 | 2003-06-18 | Dialog Semiconductor GmbH | Leistungsschalter für Batterieschutz |
| JP4150297B2 (ja) * | 2003-06-30 | 2008-09-17 | ソニー株式会社 | 電界効果トランジスタのドライブ回路 |
| US7095266B2 (en) * | 2004-08-18 | 2006-08-22 | Fairchild Semiconductor Corporation | Circuit and method for lowering insertion loss and increasing bandwidth in MOSFET switches |
| JP2006332416A (ja) * | 2005-05-27 | 2006-12-07 | Nec Electronics Corp | 半導体装置 |
| US20070097572A1 (en) | 2005-10-28 | 2007-05-03 | Caretta Integrated Circuits | Protective circuit |
| JP5151145B2 (ja) * | 2006-12-26 | 2013-02-27 | ソニー株式会社 | スイッチ回路、可変コンデンサ回路およびそのic |
| US7514983B2 (en) * | 2007-03-23 | 2009-04-07 | Fairchild Semiconductor Corporation | Over-voltage tolerant pass-gate |
-
2009
- 2009-12-30 AT AT09181029T patent/ATE545202T1/de active
- 2009-12-30 EP EP09181029A patent/EP2226937B1/de not_active Not-in-force
-
2010
- 2010-02-24 US US12/712,027 patent/US8283968B2/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| EP2226937A2 (de) | 2010-09-08 |
| EP2226937B1 (de) | 2012-02-08 |
| EP2226937A3 (de) | 2010-12-22 |
| US20100225379A1 (en) | 2010-09-09 |
| US8283968B2 (en) | 2012-10-09 |
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