ATE545951T1 - Feldeffekttransistorstruktur mit einer isolierschicht an der verbindungsstelle - Google Patents
Feldeffekttransistorstruktur mit einer isolierschicht an der verbindungsstelleInfo
- Publication number
- ATE545951T1 ATE545951T1 AT06832148T AT06832148T ATE545951T1 AT E545951 T1 ATE545951 T1 AT E545951T1 AT 06832148 T AT06832148 T AT 06832148T AT 06832148 T AT06832148 T AT 06832148T AT E545951 T1 ATE545951 T1 AT E545951T1
- Authority
- AT
- Austria
- Prior art keywords
- joint
- insulating layer
- field effect
- effect transistor
- transistor structure
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/791—Arrangements for exerting mechanical stress on the crystal lattice of the channel regions
- H10D30/797—Arrangements for exerting mechanical stress on the crystal lattice of the channel regions being in source or drain regions, e.g. SiGe source or drain
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/01—Manufacture or treatment
- H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
- H10D30/0223—Manufacture or treatment of FETs having insulated gates [IGFET] having source and drain regions or source and drain extensions self-aligned to sides of the gate
- H10D30/0227—Manufacture or treatment of FETs having insulated gates [IGFET] having source and drain regions or source and drain extensions self-aligned to sides of the gate having both lightly-doped source and drain extensions and source and drain regions self-aligned to the sides of the gate, e.g. lightly-doped drain [LDD] MOSFET or double-diffused drain [DDD] MOSFET
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/601—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/01—Manufacture or treatment
- H10D62/021—Forming source or drain recesses by etching e.g. recessing by etching and then refilling
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/113—Isolations within a component, i.e. internal isolations
- H10D62/115—Dielectric isolations, e.g. air gaps
- H10D62/116—Dielectric isolations, e.g. air gaps adjoining the input or output regions of field-effect devices, e.g. adjoining source or drain regions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
- H10D62/82—Heterojunctions
- H10D62/822—Heterojunctions comprising only Group IV materials heterojunctions, e.g. Si/Ge heterojunctions
Landscapes
- Insulated Gate Type Field-Effect Transistor (AREA)
- Thin Film Transistor (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP05112076 | 2005-12-13 | ||
| PCT/IB2006/054666 WO2007069151A2 (en) | 2005-12-13 | 2006-12-07 | Field effect transistor structure with an insulating layer at the junction |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ATE545951T1 true ATE545951T1 (de) | 2012-03-15 |
Family
ID=38161991
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AT06832148T ATE545951T1 (de) | 2005-12-13 | 2006-12-07 | Feldeffekttransistorstruktur mit einer isolierschicht an der verbindungsstelle |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US7923346B2 (de) |
| EP (1) | EP1964164B1 (de) |
| JP (1) | JP2009519599A (de) |
| CN (1) | CN101326621B (de) |
| AT (1) | ATE545951T1 (de) |
| WO (1) | WO2007069151A2 (de) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7525160B2 (en) * | 2005-12-27 | 2009-04-28 | Intel Corporation | Multigate device with recessed strain regions |
| DE102006009226B9 (de) * | 2006-02-28 | 2011-03-10 | Advanced Micro Devices, Inc., Sunnyvale | Verfahren zum Herstellen eines Transistors mit einer erhöhten Schwellwertstabilität ohne Durchlass-Strombeeinträchtigung und Transistor |
| KR20090096885A (ko) * | 2008-03-10 | 2009-09-15 | 삼성전자주식회사 | 국부적 매립 절연막을 구비하는 반도체 장치 및 그 제조방법 |
| US8236658B2 (en) * | 2009-06-03 | 2012-08-07 | Taiwan Semiconductor Manufacturing Company, Ltd. | Methods for forming a transistor with a strained channel |
| WO2011064891A1 (ja) | 2009-11-30 | 2011-06-03 | 富士通セミコンダクター株式会社 | 半導体装置の製造方法、ダイナミックスレッショルドトランジスタの製造方法 |
| GB2477513B (en) | 2010-02-03 | 2015-12-23 | Orbital Multi Media Holdings Corp | Redirection apparatus and method |
| CN101924139B (zh) * | 2010-06-25 | 2012-05-30 | 北京大学 | 一种应变沟道场效应晶体管及其制备方法 |
| US9006786B2 (en) * | 2013-07-03 | 2015-04-14 | Taiwan Semiconductor Manufacturing Company, Ltd. | Fin structure of semiconductor device |
| US9147682B2 (en) | 2013-01-14 | 2015-09-29 | Taiwan Semiconductor Manufacturing Company, Ltd. | Fin spacer protected source and drain regions in FinFETs |
| US9716176B2 (en) | 2013-11-26 | 2017-07-25 | Samsung Electronics Co., Ltd. | FinFET semiconductor devices including recessed source-drain regions on a bottom semiconductor layer and methods of fabricating the same |
| US11056382B2 (en) | 2018-03-19 | 2021-07-06 | Globalfoundries U.S. Inc. | Cavity formation within and under semiconductor devices |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6198142B1 (en) * | 1998-07-31 | 2001-03-06 | Intel Corporation | Transistor with minimal junction capacitance and method of fabrication |
| CN1215569C (zh) * | 1999-03-15 | 2005-08-17 | 松下电器产业株式会社 | 半导体器件及其制造方法 |
| US7045468B2 (en) * | 1999-04-09 | 2006-05-16 | Intel Corporation | Isolated junction structure and method of manufacture |
| FR2821483B1 (fr) * | 2001-02-28 | 2004-07-09 | St Microelectronics Sa | Procede de fabrication d'un transistor a grille isolee et a architecture du type substrat sur isolant, et transistor correspondant |
| US6812103B2 (en) * | 2002-06-20 | 2004-11-02 | Micron Technology, Inc. | Methods of fabricating a dielectric plug in MOSFETS to suppress short-channel effects |
| JP2004207457A (ja) * | 2002-12-25 | 2004-07-22 | Renesas Technology Corp | 半導体装置及び半導体装置の製造方法 |
| KR100543472B1 (ko) * | 2004-02-11 | 2006-01-20 | 삼성전자주식회사 | 소오스/드레인 영역에 디플리션 방지막을 구비하는 반도체소자 및 그 형성 방법 |
| KR100598098B1 (ko) * | 2004-02-06 | 2006-07-07 | 삼성전자주식회사 | 매몰 절연 영역을 갖는 모오스 전계 효과 트랜지스터 및그 제조 방법 |
| CN100385633C (zh) * | 2004-03-19 | 2008-04-30 | 茂德科技股份有限公司 | 金属氧化物半导体晶体管元件的制造方法 |
| KR100618839B1 (ko) * | 2004-06-28 | 2006-09-01 | 삼성전자주식회사 | 반도체 소자의 제조 방법 |
-
2006
- 2006-12-07 WO PCT/IB2006/054666 patent/WO2007069151A2/en not_active Ceased
- 2006-12-07 EP EP06832148A patent/EP1964164B1/de not_active Not-in-force
- 2006-12-07 US US12/097,122 patent/US7923346B2/en not_active Expired - Fee Related
- 2006-12-07 AT AT06832148T patent/ATE545951T1/de active
- 2006-12-07 JP JP2008545184A patent/JP2009519599A/ja not_active Withdrawn
- 2006-12-07 CN CN2006800464601A patent/CN101326621B/zh not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| EP1964164A2 (de) | 2008-09-03 |
| US7923346B2 (en) | 2011-04-12 |
| JP2009519599A (ja) | 2009-05-14 |
| EP1964164B1 (de) | 2012-02-15 |
| CN101326621A (zh) | 2008-12-17 |
| CN101326621B (zh) | 2010-06-16 |
| WO2007069151A3 (en) | 2007-10-18 |
| WO2007069151A2 (en) | 2007-06-21 |
| US20090166761A1 (en) | 2009-07-02 |
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