ATE545955T1 - Polysilizium längsstreifen sicherung - Google Patents

Polysilizium längsstreifen sicherung

Info

Publication number
ATE545955T1
ATE545955T1 AT03777076T AT03777076T ATE545955T1 AT E545955 T1 ATE545955 T1 AT E545955T1 AT 03777076 T AT03777076 T AT 03777076T AT 03777076 T AT03777076 T AT 03777076T AT E545955 T1 ATE545955 T1 AT E545955T1
Authority
AT
Austria
Prior art keywords
resistance
width
fuse
polysilicon
insulating layer
Prior art date
Application number
AT03777076T
Other languages
English (en)
Inventor
Richard Dondero
Doug Trotter
Original Assignee
Nxp Bv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nxp Bv filed Critical Nxp Bv
Application granted granted Critical
Publication of ATE545955T1 publication Critical patent/ATE545955T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/49—Adaptable interconnections, e.g. fuses or antifuses
    • H10W20/493—Fuses, i.e. interconnections changeable from conductive to non-conductive

Landscapes

  • Design And Manufacture Of Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
AT03777076T 2002-12-16 2003-12-13 Polysilizium längsstreifen sicherung ATE545955T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US43413602P 2002-12-16 2002-12-16
PCT/IB2003/005905 WO2004055893A1 (en) 2002-12-16 2003-12-13 Poly-silicon stringer fuse

Publications (1)

Publication Number Publication Date
ATE545955T1 true ATE545955T1 (de) 2012-03-15

Family

ID=32595265

Family Applications (1)

Application Number Title Priority Date Filing Date
AT03777076T ATE545955T1 (de) 2002-12-16 2003-12-13 Polysilizium längsstreifen sicherung

Country Status (7)

Country Link
US (1) US7205631B2 (de)
EP (1) EP1576667B1 (de)
JP (1) JP2006510213A (de)
CN (1) CN100431147C (de)
AT (1) ATE545955T1 (de)
AU (1) AU2003286333A1 (de)
WO (1) WO2004055893A1 (de)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006253353A (ja) * 2005-03-10 2006-09-21 Matsushita Electric Ind Co Ltd 電気ヒューズモジュール
JP4825559B2 (ja) * 2006-03-27 2011-11-30 富士通セミコンダクター株式会社 半導体装置
US20080003767A1 (en) * 2006-06-29 2008-01-03 Ik-Soo Choi Method for fabricating semiconductor device
US7732898B2 (en) * 2007-02-02 2010-06-08 Infineon Technologies Ag Electrical fuse and associated methods
US7851885B2 (en) * 2007-03-07 2010-12-14 International Business Machines Corporation Methods and systems involving electrically programmable fuses
US20080277756A1 (en) * 2007-05-09 2008-11-13 Freescale Semiconductor, Inc. Electronic device and method for operating a memory circuit
JP4458129B2 (ja) * 2007-08-09 2010-04-28 ソニー株式会社 半導体装置およびその製造方法
US8013419B2 (en) * 2008-06-10 2011-09-06 International Business Machines Corporation Structure and method to form dual silicide e-fuse
US8035191B2 (en) * 2008-12-02 2011-10-11 United Microelectronics Corp. Contact efuse structure
CN101826507B (zh) * 2009-03-02 2012-01-11 晨星软件研发(深圳)有限公司 电子熔丝及其相关控制电路
CN103117269B (zh) * 2011-11-16 2015-07-15 北大方正集团有限公司 一种熔丝组件、熔丝组件制造方法及设备
US8981523B2 (en) 2012-03-14 2015-03-17 International Business Machines Corporation Programmable fuse structure and methods of forming

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63140550A (ja) * 1986-12-01 1988-06-13 Mitsubishi Electric Corp 冗長回路用電気ヒユ−ズ
US5011791A (en) 1989-02-03 1991-04-30 Motorola, Inc. Fusible link with built-in redundancy
US6337507B1 (en) * 1995-09-29 2002-01-08 Intel Corporation Silicide agglomeration fuse device with notches to enhance programmability
US5976943A (en) * 1996-12-27 1999-11-02 Vlsi Technology, Inc. Method for bi-layer programmable resistor
FR2778791B1 (fr) * 1998-05-14 2002-10-25 Sgs Thomson Microelectronics Fusible de circuit integre a point de claquage localise
US6368902B1 (en) * 2000-05-30 2002-04-09 International Business Machines Corporation Enhanced efuses by the local degradation of the fuse link

Also Published As

Publication number Publication date
US20060081959A1 (en) 2006-04-20
CN1726592A (zh) 2006-01-25
EP1576667A1 (de) 2005-09-21
US7205631B2 (en) 2007-04-17
JP2006510213A (ja) 2006-03-23
AU2003286333A1 (en) 2004-07-09
EP1576667B1 (de) 2012-02-15
WO2004055893A1 (en) 2004-07-01
CN100431147C (zh) 2008-11-05

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