ATE545957T1 - Programmierbarer phasenwechselspeicher und verfahren dafür - Google Patents
Programmierbarer phasenwechselspeicher und verfahren dafürInfo
- Publication number
- ATE545957T1 ATE545957T1 AT05850858T AT05850858T ATE545957T1 AT E545957 T1 ATE545957 T1 AT E545957T1 AT 05850858 T AT05850858 T AT 05850858T AT 05850858 T AT05850858 T AT 05850858T AT E545957 T1 ATE545957 T1 AT E545957T1
- Authority
- AT
- Austria
- Prior art keywords
- contiguous layer
- phase change
- electrical current
- change material
- region
- Prior art date
Links
- 239000012782 phase change material Substances 0.000 abstract 4
- 238000010438 heat treatment Methods 0.000 abstract 2
- 230000001939 inductive effect Effects 0.000 abstract 2
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
- H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
- H10B63/80—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays
- H10B63/82—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays the switching components having a common active material layer
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/821—Device geometry
- H10N70/823—Device geometry adapted for essentially horizontal current flow, e.g. bridge type devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/861—Thermal details
- H10N70/8613—Heating or cooling means other than resistive heating electrodes, e.g. heater in parallel
Landscapes
- Semiconductor Memories (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US59312904P | 2004-12-13 | 2004-12-13 | |
| PCT/IB2005/054167 WO2006064441A2 (en) | 2004-12-13 | 2005-12-09 | Programmable phase-change memory and method therefor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ATE545957T1 true ATE545957T1 (de) | 2012-03-15 |
Family
ID=36228712
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AT05850858T ATE545957T1 (de) | 2004-12-13 | 2005-12-09 | Programmierbarer phasenwechselspeicher und verfahren dafür |
Country Status (8)
| Country | Link |
|---|---|
| US (2) | US8208293B2 (de) |
| EP (1) | EP1829110B1 (de) |
| JP (1) | JP2008523605A (de) |
| KR (1) | KR20070087098A (de) |
| CN (1) | CN101185167A (de) |
| AT (1) | ATE545957T1 (de) |
| TW (1) | TW200629270A (de) |
| WO (1) | WO2006064441A2 (de) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008523605A (ja) * | 2004-12-13 | 2008-07-03 | エヌエックスピー ビー ヴィ | プログラム可能な相変化メモリ及び方法 |
| JP4625822B2 (ja) | 2007-03-16 | 2011-02-02 | 株式会社東芝 | 半導体記憶装置及びその製造方法 |
| US20090180313A1 (en) * | 2008-01-15 | 2009-07-16 | Wim Deweerd | Chalcogenide anti-fuse |
| KR101007562B1 (ko) * | 2008-05-20 | 2011-01-14 | 주식회사 하이닉스반도체 | 저항성 메모리 소자 및 그 제조 방법 |
| CN110335941B (zh) * | 2019-07-03 | 2023-08-18 | 芯盟科技有限公司 | 相变存储器的结构及其形成方法 |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4845533A (en) * | 1986-08-22 | 1989-07-04 | Energy Conversion Devices, Inc. | Thin film electrical devices with amorphous carbon electrodes and method of making same |
| US5166758A (en) * | 1991-01-18 | 1992-11-24 | Energy Conversion Devices, Inc. | Electrically erasable phase change memory |
| US6172902B1 (en) * | 1998-08-12 | 2001-01-09 | Ecole Polytechnique Federale De Lausanne (Epfl) | Non-volatile magnetic random access memory |
| JP2006508522A (ja) | 2002-02-22 | 2006-03-09 | オヴォニクス インコーポレイテッド | カルコゲニドクラッド法を使用する単一レベルの金属メモリーセル |
| US6707087B2 (en) * | 2002-06-21 | 2004-03-16 | Hewlett-Packard Development Company, L.P. | Structure of chalcogenide memory element |
| US6766264B2 (en) | 2002-08-02 | 2004-07-20 | Sun Microsystems, Inc. | Method and apparatus for calibrating parameters to be used in a digital circuit simulation |
| US6850432B2 (en) * | 2002-08-20 | 2005-02-01 | Macronix International Co., Ltd. | Laser programmable electrically readable phase-change memory method and device |
| KR100491978B1 (ko) * | 2003-04-12 | 2005-05-27 | 한국전자통신연구원 | 저 전력 동작이 가능한 상변화 메모리 소자 및 그 제조 방법 |
| JP4634014B2 (ja) | 2003-05-22 | 2011-02-16 | 株式会社日立製作所 | 半導体記憶装置 |
| KR100504700B1 (ko) * | 2003-06-04 | 2005-08-03 | 삼성전자주식회사 | 고집적 상변환 램 |
| JP2008523605A (ja) * | 2004-12-13 | 2008-07-03 | エヌエックスピー ビー ヴィ | プログラム可能な相変化メモリ及び方法 |
-
2005
- 2005-12-09 JP JP2007545076A patent/JP2008523605A/ja not_active Abandoned
- 2005-12-09 CN CN200580047954.7A patent/CN101185167A/zh active Pending
- 2005-12-09 EP EP05850858A patent/EP1829110B1/de not_active Expired - Lifetime
- 2005-12-09 KR KR1020077016203A patent/KR20070087098A/ko not_active Withdrawn
- 2005-12-09 WO PCT/IB2005/054167 patent/WO2006064441A2/en not_active Ceased
- 2005-12-09 US US11/721,432 patent/US8208293B2/en active Active
- 2005-12-09 TW TW094143688A patent/TW200629270A/zh unknown
- 2005-12-09 AT AT05850858T patent/ATE545957T1/de active
-
2012
- 2012-05-25 US US13/481,030 patent/US8503226B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| EP1829110A2 (de) | 2007-09-05 |
| US20100039856A1 (en) | 2010-02-18 |
| KR20070087098A (ko) | 2007-08-27 |
| US8208293B2 (en) | 2012-06-26 |
| US20120230100A1 (en) | 2012-09-13 |
| JP2008523605A (ja) | 2008-07-03 |
| TW200629270A (en) | 2006-08-16 |
| US8503226B2 (en) | 2013-08-06 |
| EP1829110B1 (de) | 2012-02-15 |
| CN101185167A (zh) | 2008-05-21 |
| WO2006064441A2 (en) | 2006-06-22 |
| WO2006064441A3 (en) | 2006-11-16 |
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