ATE549438T1 - Vorrichtung zum tiegelfreien zonenschmelzen - Google Patents

Vorrichtung zum tiegelfreien zonenschmelzen

Info

Publication number
ATE549438T1
ATE549438T1 AT07706464T AT07706464T ATE549438T1 AT E549438 T1 ATE549438 T1 AT E549438T1 AT 07706464 T AT07706464 T AT 07706464T AT 07706464 T AT07706464 T AT 07706464T AT E549438 T1 ATE549438 T1 AT E549438T1
Authority
AT
Austria
Prior art keywords
reflecting mirror
ellipsoidal reflecting
rotary ellipsoidal
mirror
zone melting
Prior art date
Application number
AT07706464T
Other languages
English (en)
Inventor
Isamu Shindo
Original Assignee
Crystal Systems Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Crystal Systems Corp filed Critical Crystal Systems Corp
Application granted granted Critical
Publication of ATE549438T1 publication Critical patent/ATE549438T1/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/16—Heating of the molten zone
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/16—Heating of the molten zone
    • C30B13/22—Heating of the molten zone by irradiation or electric discharge
    • C30B13/24—Heating of the molten zone by irradiation or electric discharge using electromagnetic waves
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/28—Controlling or regulating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01K—ELECTRIC INCANDESCENT LAMPS
    • H01K1/00—Details
    • H01K1/18—Mountings or supports for the incandescent body
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1076—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone
    • Y10T117/1088—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone including heating or cooling details

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Feeding, Discharge, Calcimining, Fusing, And Gas-Generation Devices (AREA)
  • Gasification And Melting Of Waste (AREA)
  • Processing Of Solid Wastes (AREA)
AT07706464T 2007-01-10 2007-01-10 Vorrichtung zum tiegelfreien zonenschmelzen ATE549438T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2007/050117 WO2008084529A1 (ja) 2007-01-10 2007-01-10 浮遊帯域溶融装置

Publications (1)

Publication Number Publication Date
ATE549438T1 true ATE549438T1 (de) 2012-03-15

Family

ID=39608434

Family Applications (1)

Application Number Title Priority Date Filing Date
AT07706464T ATE549438T1 (de) 2007-01-10 2007-01-10 Vorrichtung zum tiegelfreien zonenschmelzen

Country Status (6)

Country Link
US (1) US20100037817A1 (de)
EP (1) EP2128308B1 (de)
KR (1) KR101157311B1 (de)
CN (1) CN101611177B (de)
AT (1) ATE549438T1 (de)
WO (1) WO2008084529A1 (de)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009081811A1 (ja) * 2007-12-25 2009-07-02 Crystal Systems Corporation 浮遊帯域溶融装置
CN102269520B (zh) * 2011-06-28 2014-06-25 中国原子能科学研究院 一种用于中子衍射样品原位实验的镜面高温炉装置
KR101677819B1 (ko) * 2011-12-02 2016-11-18 고쿠리츠켄큐카이하츠호진 상교기쥬츠 소고켄큐쇼 집광경 가열로
US9322335B2 (en) 2013-03-15 2016-04-26 Siemens Energy, Inc. Gas turbine combustor exit piece with hinged connections
FR3013951B1 (fr) 2013-12-02 2017-01-20 Oreal Applicateur d'un produit cosmetique, de maquillage ou de soin, sur les cils ou les sourcils
WO2018003386A1 (ja) * 2016-06-29 2018-01-04 株式会社クリスタルシステム 単結晶製造装置および単結晶製造方法
US20190032242A1 (en) * 2016-07-28 2019-01-31 Crystal Systems Corporation Single-Crystal Production Equipment
CN110546315B (zh) * 2018-03-29 2021-09-03 株式会社水晶系统 单晶制造装置
CN110528062A (zh) * 2018-05-23 2019-12-03 中国科学院金属研究所 激光辅助加热生长大尺寸钛合金晶体的方法及专用设备
JP7697650B2 (ja) * 2021-03-03 2025-06-24 国立大学法人山梨大学 溶媒移動浮遊帯域溶融法による透明な単結晶の製造方法、透明な単結晶及び製造装置。

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5852960B2 (ja) * 1980-11-25 1983-11-26 科学技術庁無機材質研究所長 浮遊帯域溶融装置
JPS5795890A (en) * 1980-12-04 1982-06-14 Natl Inst For Res In Inorg Mater Crystal growing device
JPH09235171A (ja) * 1995-09-18 1997-09-09 Crystal Syst:Kk 浮遊帯域溶融装置
US5762707A (en) * 1995-09-18 1998-06-09 Cristal Systems, Inc. Floating zone melting apparatus
JP2001192290A (ja) * 2000-01-07 2001-07-17 Nec Machinery Corp 単結晶育成装置
US6531153B2 (en) * 2001-05-29 2003-03-11 Drugtech Corporation Composition with sustained release of levodopa and carbidopa
KR20050044617A (ko) * 2002-09-27 2005-05-12 가부시키가이샤 무라타 세이사쿠쇼 테르븀계 상자성 가닛 단결정 및 자기 광학 장치
JP3668738B1 (ja) * 2004-02-09 2005-07-06 Ｎｅｃマシナリー株式会社 単結晶育成装置

Also Published As

Publication number Publication date
EP2128308A1 (de) 2009-12-02
WO2008084529A1 (ja) 2008-07-17
CN101611177B (zh) 2012-02-22
KR101157311B1 (ko) 2012-06-15
EP2128308A4 (de) 2010-05-26
CN101611177A (zh) 2009-12-23
US20100037817A1 (en) 2010-02-18
EP2128308B1 (de) 2012-03-14
KR20100004937A (ko) 2010-01-13

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