ATE549746T1 - Verfahren zur herstellung einer matrix zur detektion elektromagnetischer strahlung insbesondere infrarotstrahlung - Google Patents

Verfahren zur herstellung einer matrix zur detektion elektromagnetischer strahlung insbesondere infrarotstrahlung

Info

Publication number
ATE549746T1
ATE549746T1 AT08300187T AT08300187T ATE549746T1 AT E549746 T1 ATE549746 T1 AT E549746T1 AT 08300187 T AT08300187 T AT 08300187T AT 08300187 T AT08300187 T AT 08300187T AT E549746 T1 ATE549746 T1 AT E549746T1
Authority
AT
Austria
Prior art keywords
matrix
producing
detecting electromagnetic
radiation
particular infrared
Prior art date
Application number
AT08300187T
Other languages
English (en)
Inventor
Bernard Pitault
Original Assignee
Soc Fr Detecteurs Infrarouges Sofradir
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Soc Fr Detecteurs Infrarouges Sofradir filed Critical Soc Fr Detecteurs Infrarouges Sofradir
Application granted granted Critical
Publication of ATE549746T1 publication Critical patent/ATE549746T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/804—Containers or encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/117—Shapes of semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W46/00—Marks applied to devices, e.g. for alignment or identification
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/0198—Manufacture or treatment batch processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/184—Infrared image sensors
    • H10F39/1843—Infrared image sensors of the hybrid type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/809—Constructional details of image sensors of hybrid image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W46/00—Marks applied to devices, e.g. for alignment or identification
    • H10W46/301—Marks applied to devices, e.g. for alignment or identification for alignment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W46/00—Marks applied to devices, e.g. for alignment or identification
    • H10W46/601—Marks applied to devices, e.g. for alignment or identification for use after dicing
    • H10W46/603—Formed on wafers or substrates before dicing and remaining on chips after dicing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/072—Connecting or disconnecting of bump connectors
    • H10W72/07221—Aligning
    • H10W72/07223—Active alignment, e.g. using optical alignment using marks or sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/072—Connecting or disconnecting of bump connectors
    • H10W72/07231—Techniques
    • H10W72/07236—Soldering or alloying
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/30—Die-attach connectors
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
    • Y10T156/10—Methods of surface bonding and/or assembly therefor
    • Y10T156/1089—Methods of surface bonding and/or assembly therefor of discrete laminae to single face of additional lamina
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
    • Y10T156/10—Methods of surface bonding and/or assembly therefor
    • Y10T156/1089—Methods of surface bonding and/or assembly therefor of discrete laminae to single face of additional lamina
    • Y10T156/1092—All laminae planar and face to face

Landscapes

  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
  • Light Receiving Elements (AREA)
  • Radiation Pyrometers (AREA)
AT08300187T 2007-04-25 2008-04-21 Verfahren zur herstellung einer matrix zur detektion elektromagnetischer strahlung insbesondere infrarotstrahlung ATE549746T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0754677A FR2915573B1 (fr) 2007-04-25 2007-04-25 Procede pour la realisation d'une matrice de detection de rayonnements electromagnetiques et notamment de rayonnements infrarouges

Publications (1)

Publication Number Publication Date
ATE549746T1 true ATE549746T1 (de) 2012-03-15

Family

ID=38895849

Family Applications (1)

Application Number Title Priority Date Filing Date
AT08300187T ATE549746T1 (de) 2007-04-25 2008-04-21 Verfahren zur herstellung einer matrix zur detektion elektromagnetischer strahlung insbesondere infrarotstrahlung

Country Status (4)

Country Link
US (1) US7807010B2 (de)
EP (1) EP1986239B9 (de)
AT (1) ATE549746T1 (de)
FR (1) FR2915573B1 (de)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2918212B1 (fr) * 2007-06-27 2009-09-25 Fr De Detecteurs Infrarouges S Procede pour la realisation d'une matrice de rayonnements electromagnetiques et procede pour remplacer un module elementaire d'une telle matrice de detection.
US8117741B2 (en) * 2009-04-07 2012-02-21 Oy Ajat Ltd Method for manufacturing a radiation imaging panel comprising imaging tiles
WO2012145038A1 (en) * 2011-04-19 2012-10-26 Teledyne Rad-Icon Imaging Corp. Method of direct silicon tiling of a tiled image sensor array
FR3025359B1 (fr) 2014-09-01 2016-11-04 Soc Francaise De Detecteurs Infrarouges - Sofradir Procede de positionnement d'elements, notamment optiques sur la face arriere d'un detecteur infrarouge de type hybride
DE102014225396B3 (de) * 2014-12-10 2016-04-28 Siemens Aktiengesellschaft Sensorboard für ein Detektormodul und Verfahren zu dessen Herstellung
JP6380069B2 (ja) * 2014-12-11 2018-08-29 住友電気工業株式会社 光送信モジュール
EP3405927B1 (de) 2016-01-20 2024-10-16 Carrier Corporation Gebäudemanagementsystem mit objekterkennung und -verfolgung in einem grossen raum mit einem niedrigauflösenden sensor
CN108700655A (zh) 2016-02-10 2018-10-23 开利公司 存在检测系统
CN107632473B (zh) * 2017-10-18 2020-05-12 深圳市华星光电半导体显示技术有限公司 Psva液晶显示面板
TWI679441B (zh) * 2018-06-07 2019-12-11 大陸商友達頤康信息科技（蘇州）有限公司 無線射頻定位系統、辨識標籤及其通訊方法
EP4500123A1 (de) * 2022-03-28 2025-02-05 trinamiX GmbH Verfahren zur herstellung einer spektrometervorrichtung

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4039833A (en) * 1976-08-17 1977-08-02 The United States Of America As Represented By The Secretary Of The Navy High density infrared detector array
US5308980A (en) * 1991-02-20 1994-05-03 Amber Engineering, Inc. Thermal mismatch accommodated infrared detector hybrid array
US5270255A (en) * 1993-01-08 1993-12-14 Chartered Semiconductor Manufacturing Pte, Ltd. Metallization process for good metal step coverage while maintaining useful alignment mark
US6949158B2 (en) * 2001-05-14 2005-09-27 Micron Technology, Inc. Using backgrind wafer tape to enable wafer mounting of bumped wafers
US6582990B2 (en) * 2001-08-24 2003-06-24 International Rectifier Corporation Wafer level underfill and interconnect process
TW571409B (en) * 2002-12-03 2004-01-11 Advanced Semiconductor Eng Optical device and packaging method thereof
FR2857504B1 (fr) * 2003-07-08 2006-01-06 Atmel Grenoble Sa Capteur d'image de grande dimension et procede de fabrication

Also Published As

Publication number Publication date
EP1986239A3 (de) 2011-03-23
EP1986239B1 (de) 2012-03-14
EP1986239A2 (de) 2008-10-29
US20090321013A1 (en) 2009-12-31
FR2915573B1 (fr) 2010-04-02
US7807010B2 (en) 2010-10-05
FR2915573A1 (fr) 2008-10-31
EP1986239B9 (de) 2013-09-11

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